# Bipolar Transistor Array, Dual NPN, 40 V, 600 mA, 150 mW

![Product image](https://novapart.co/image/farnell:2464065/)

**URL**: https://novapart.co/products/MBT2222ADW1T1G/bipolar-transistor-array-dual-npn-40-v-600-ma-150
**SKU**: MBT2222ADW1T1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT
**Price**: €0.0390
**Stock**: 500+
**Lead Time**: 120 days (indicative)

## Description

Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:150mW; DC Collector Current:600mA; DC Current Gain hFE:35hFE; Transistor Case Style:SC

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Product Range | - |
| Qualification | - |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | Dual NPN |
| Power Dissipation Npn | 150mW |
| Power Dissipation Pnp | - |
| Transistor Case Style | SOT-363 |
| Transition Frequency Npn | 300MHz |
| Transition Frequency Pnp | - |
| Operating Temperature Max | 150°C |
| Dc Current Gain Hfe Min Npn | 35hFE |
| Dc Current Gain Hfe Min Pnp | - |
| Continuous Collector Current Npn | 600mA |
| Continuous Collector Current Pnp | - |
| Collector Emitter Voltage Max Npn | 40V |
| Collector Emitter Voltage Max Pnp | - |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2464065/)

|onseisoumester@|||
|---|---|---|
|onseisoumester@||Final Product/Process Change Notification<br>Document #: FPCN23343X<br>Issue Date: 30 Jul 2020|
|**Title of Change:**<br>Capacity expansion of Assembly and Test Operations General Purpose Transistor and Bias Resistor<br>Transistor (BRT) packaged in SC-88 to ON Semiconductor Seremban, Malaysia.<br>**Proposed First Ship date:**<br>22 Nov 2020 or earlier if approved by customer<br>~~—————~~|||
|**Contact Information:**|Contact your local ON Semiconductor Sales Office orJason.Choy@onsemi.com||
|**PCN Samples Contact:**<br>Contact your local ON Semiconductor Sales Office orPCN.samples@onsemi.com<br>Sample requests are to be submitted no later than 30 days from the date of first notification,<br>Initial PCN or Final PCN, for this change.<br>Samples delivery timing will be subject to request date, sample quantity and special customer<br>packing/label requirements.<br>**Additional Reliability Data:**<br>Contact your local ON Semiconductor Sales Office orMohdAzizi.Azman@onsemi.com<br>~~pf~~|||
|**Type of Notification:**|This is a Final Product/Process Change Notification (FPCN) sent to customers. FPCNs are issued 90||
||days prior to implementation of the change.||
||ON Semiconductor will consider this change accepted, unless an inquiry is made in writing within|ON Semiconductor will consider this change accepted, unless an inquiry is made in writing within|
||30 days of delivery of this notice. To do so, contactPCN.Support@onsemi.com||
|**Marking of Parts/ Traceability of**<br>**Change:**<br>Customer may receive the parts from ON Semiconductor Seremban, Malaysia from month on<br>September 2020 onwards once FPCN expire. Parts from ON Semiconductor Seremban can be<br>identified through product marking which follow ON Semiconductor marking format.<br>**Change Category:**<br>Assembly Change,  Test Change<br>~~se~~|||
|**Change Sub-Category(s):**|Manufacturing Site Addition||
|**Sites Affected:**|||
|**ON Semiconductor Sites**||**External Foundry/Subcon Sites**|
|ON Semiconductor Seremban, Malaysia||None|



## **Description and Purpose:** 

This Final Notification announces the qualification of ON Semiconductor Seremban, Malaysia as the additional manufacturing site on top of Leshan Phoenix Semiconductor for SC88 package on Gen Purpose Transistor and BRT. 

There are no product material changes as a result of this change. 

||**Before Change Description**|**After Change Description**|
|---|---|---|
|**Assembly Site**|ON Semiconductor Leshan, China|ON Semiconductor Leshan, China<br>ON Semiconductor Seremban, Malaysia|
|**Test Site**|ON Semiconductor Leshan, China|ON Semiconductor Leshan, China<br>ON Semiconductor Seremban, Malaysia|



## Products listed in this notification will continue to be Pb‐free, Halide free and RoHS compliant. 

Qualification tests are designed to show that the reliability of the transferred devices will continue to meet or exceed ON Semiconductor standards. 

TEM001793 Rev. C 

Page 1 of 5 

Final Product/Process Change Notification Document #: FPCN23343X Issue Date: 30 Jul 2020 

## **Reliability Data Summary:** 

|**Test**|**Specification**|**Condition**|**Interval**|**Results**|
|---|---|---|---|---|
|HTRB|JESD22-A108|Ta=125°C, 100 % max rated V|1008 hrs|0/154|
|H3TRB|JESD22-A101|Ta=85°C, 85% / 80% max rated V|1008 hrs|0/154|
|HTSL|JESD22-A103|Ta= 150°C|1008 hrs|0/154|
|TC|JESD22-A104|Ta= -55°C to 150°C|500 cyc|0/154|
|AC|JESD22-A102|121°C, 100% RH|96 hrs|0/154|
|IOL|MIL STD750<br>(M1037)<br>AECQ101|Ta=+25°C, deltaTj=100°C<br>On/Off = 2 min|15000 cyc|0/154|
|PC|J-STD-020  JESD-A113|MSL 1 @ 260 °C||0/616|
|RSH|JESD22- B106|Ta = 265C, 10 sec||0/60|



|**QV DEVICE NAME :MBT2222ADW1T1G**||||
|---|---|---|---|
|**RMS                         :V57782**||||
|**PACKAGE                :SC-88 6L EUTECTIC**||||
|**Test**<br>**Specification**<br>**Condition**<br>**Interval**<br>**Results**<br>HTRB<br>JESD22-A108<br>Ta=125°C, 100 % max rated V<br>1008 hrs<br>0/77<br>H3TRB<br>JESD22-A101<br>Ta=85°C, 85% / 80% max rated V<br>1008 hrs<br>0/77<br>HTSL<br>JESD22-A103<br>Ta= 150°C<br>1008 hrs<br>0/77<br>TC<br>JESD22-A104<br>Ta= -55°C to 150°C<br>500 cyc<br>0/77<br>AC<br>JESD22-A102<br>121°C, 100% RH<br>96 hrs<br>0/77<br>IOL<br>MIL STD750<br>(M1037)<br>AECQ101<br>Ta=+25°C, deltaTj=100°C<br>On/Off = 2 min<br>15000 cyc<br>0/77<br>PC<br>J-STD-020  JESD-A113<br>MSL 1 @ 260 °C<br>0/308<br>RSH<br>JESD22- B106<br>Ta = 265C, 10 sec<br>0/30<br>~~——=-~~||||
|**QV DEVICE NAME :MUN5135DW1T1G**||||
|**RMS                         :L57789**||||
|**PACKAGE                :SC-88 6L EUTECTIC**||||
|**Test**<br>**Specification**<br>**Condition**<br>**Interval**<br>**Results**<br>HTRB<br>JESD22-A108<br>Ta=125°C, 100 % max rated V<br>1008 hrs<br>0/154<br>HTSL<br>JESD22-A103<br>Ta= 150°C<br>1008 hrs<br>0/154<br>HAST<br>JESD22-A110<br>110°C, 85% RH, 18.8psig, bias<br>264 hrs<br>0/154<br>TC<br>JESD22-A104<br>Ta= -55°C to 150°C<br>500 cyc<br>0/154<br>uHAST<br>JESD22-A118<br>110°C, 85% RH, 18.8psig, unbias<br>264 hrs<br>0/154<br>IOL<br>MIL STD750<br>(M1037)<br>AECQ101<br>Ta=+25°C, deltaTj=100°C<br>On/Off = 2 min<br>15000 cyc<br>0/154<br>PC<br>J-STD-020  JESD-A113<br>MSL 1 @ 260 °C<br>0/616<br>RSH<br>JESD22- B106<br>Ta = 265C,10 sec<br>0/60<br>~~ae~~||||
|TEM001793 Rev. C||Page 2 of 5||



TEM001793 Rev. C 

Final Product/Process Change Notification Document #: FPCN23343X Issue Date: 30 Jul 2020 

|**Test**|**Specification**|**Condition**|**Interval**|**Results**|
|---|---|---|---|---|
|HTRB|JESD22-A108|Ta=125°C, 100 % max rated V|1008 hrs|0/154|
|HTSL|JESD22-A103|Ta= 150°C|1008 hrs|0/154|
|HAST|JESD22-A110|110°C, 85% RH, 18.8psig, bias|264 hrs|0/154|
|TC|JESD22-A104|Ta= -55°C to 150°C|500 cyc|0/154|
|uHAST|JESD22-A118|110°C, 85% RH, 18.8psig, unbias|264 hrs|0/154|
|IOL|MIL STD750<br>(M1037)<br>AECQ101|Ta=+25°C, deltaTj=100°C<br>On/Off = 2 min|15000 cyc|0/154|
|PC|J-STD-020  JESD-A113|MSL 1 @ 260 °C||0/616|
|RSH|JESD22- B106|Ta = 265C, 10 sec||0/60|



## **Electrical Characteristics Summary:** 

Electrical characteristics are not impacted. 

## **List of Affected Parts:** 

_**Note:** Only the standard (off the shelf) part numbers are listed in the parts list.  Any custom parts affected by this PCN are shown in the customer specific PCN addendum in the PCN email notification, or on the_ _**PCN Customized Portal.**_ 

|**Part Number**|**Qualification Vehicle**|
|---|---|
|MUN5335DW1T1G|MUN5235DW1T1G|
|MUN5335DW1T2G|MUN5235DW1T1G|
|MUN5336DW1T1G|MUN5235DW1T1G|
|BC846BDW1T1G|MBT2222ADW1T1G|
|BC846BPDW1T1G|MBT2222ADW1T1G|
|BC847BDW1T1G|MBT2222ADW1T1G|
|BC847BDW1T3G|MBT2222ADW1T1G|
|BC847BPDW1T1G|MBT2222ADW1T1G|
|BC847BPDW1T2G|MBT2222ADW1T1G|
|MUN5111DW1T1G|MUN5135DW1T1G|
|MUN5113DW1T1G|MUN5135DW1T1G|
|MUN5114DW1T1G|MUN5135DW1T1G|
|MUN5115DW1T1G|MUN5135DW1T1G|
|MUN5116DW1T1G|MUN5135DW1T1G|



TEM001793 Rev. C 

Page 3 of 5 

Final Product/Process Change Notification Document #: FPCN23343X Issue Date: 30 Jul 2020 

|MUN5133DW1T1G|MUN5135DW1T1G|
|---|---|
|MUN5135DW1T1G|MUN5135DW1T1G|
|MUN5211DW1T1G|MUN5235DW1T1G|
|MUN5212DW1T1G|MUN5235DW1T1G|
|MUN5213DW1T1G|MUN5235DW1T1G|
|MUN5214DW1T1G|MUN5235DW1T1G|
|MUN5215DW1T1G|MUN5235DW1T1G|
|MUN5216DW1T1G|MUN5235DW1T1G|
|MUN5230DW1T1G|MUN5235DW1T1G|
|MUN5231DW1T1G|MUN5235DW1T1G|
|MUN5232DW1T1G|MUN5235DW1T1G|
|MUN5233DW1T1G|MUN5235DW1T1G|
|MUN5235DW1T1G|MUN5235DW1T1G|
|MUN5237DW1T1G|MUN5235DW1T1G|
|MUN5311DW1T1G|MUN5235DW1T1G|
|MUN5311DW1T2G|MUN5235DW1T1G|
|MUN5312DW1T1G|MUN5235DW1T1G|
|MUN5313DW1T1G|MUN5235DW1T1G|
|MUN5314DW1T1G|MUN5235DW1T1G|
|MUN5316DW1T1G|MUN5235DW1T1G|
|MUN5330DW1T1G|MUN5235DW1T1G|
|MUN5332DW1T1G|MUN5235DW1T1G|
|MUN5333DW1T1G|MUN5235DW1T1G|
|BC847BPDW1T3G|MBT2222ADW1T1G|
|BC847CDW1T1G|MBT2222ADW1T1G|
|BC848CDW1T1G|MBT2222ADW1T1G|
|BC848CPDW1T1G|MBT2222ADW1T1G|
|BC856BDW1T1G|BC856BDW1T1G|
|BC857BDW1T1G|BC856BDW1T1G|
|BC857CDW1T1G|BC856BDW1T1G|
|MBT2222ADW1T1G|MBT2222ADW1T1G|
|MBT3904DW1T1G|MBT2222ADW1T1G|
|MBT3904DW1T3G|MBT2222ADW1T1G|
|MBT3906DW1T1G|BC856BDW1T1G|



TEM001793 Rev. C 

Page 4 of 5 

Final Product/Process Change Notification Document #: FPCN23343X Issue Date: 30 Jul 2020 

|MBT3946DW1T1G|MBT2222ADW1T1G|
|---|---|
|MBT3946DW1T2G|MBT2222ADW1T1G|
|MBT6429DW1T1G|MBT2222ADW1T1G|
|NST45010MW6T1G|BC856BDW1T1G|
|NST45011MW6T1G|MBT2222ADW1T1G|
|UMZ1NT1G|MBT2222ADW1T1G|



TEM001793 Rev. C 

Page 5 of 5 

**Note** _: The Japanese version is for reference only. In case of any differences between the English and Japanese version, the English version shall control._ `注：日本語版は参照用です。英語版と日本語版の違いがある場合は、英語版が優先さ れます .` 

最終製品 **/** プロセス変更通知 文書番号 **#** ： FPCN23343X 発行日： 30 Jul 2020 

|変更件名： <br>SC-88にパッケージされた汎用トランジスタおよびバイアス抵抗トランジスタ(BRT)の組立および検査オペレーションの<br>能力をオン・セミコンダクター セレンバン、マレーシアに拡大<br>~~a~~|変更件名： <br>SC-88にパッケージされた汎用トランジスタおよびバイアス抵抗トランジスタ(BRT)の組立および検査オペレーションの<br>能力をオン・セミコンダクター セレンバン、マレーシアに拡大<br>~~a~~|
|---|---|
|初回出荷予定日：<br>22 Nov 2020またはお客様からの承認が得られた場合はそれ以前.<br>連絡先情報： <br>現地のオン・セミコンダクター営業所またはJason.Choy@onsemi.comにお問い合わせください。<br>~~—~~||
|サンプル：<br>現地のオン・セミコンダクター営業所または PCN.Samples@onsemi.comにお問い合わせください。<br>サンプルは、この変更の初回通知、初回PCNの日付から30日以内に要求してください。<br>サンプル納入時は、依頼日、数量、特別梱包材/ラベル条件によって異なります。<br>~~a ee~~||
|追加の信頼性データ： <br>お客さまの地域のオン・セミコンダクター営業所またはcontactMohdAzizi.Azman@onsemi.com にお問い合わせく<br>ださい。<br>~~a eee~~||
|通知種別： <br>これは、お客様宛の最終製品/プロセス変更通知（FPCN）です。FPCNは、変更実施の90日前に発行されま||
|す。||
|オン・セミコンダクターは、この通知の送付から30日以内に書面による問い合わせがない限り、この変更が承諾さ||
|れたものとみなします。 お問い合わせは、PCN.Support@onsemi.com宛てにお願いします。||
|変更部品の識別：<br>お客様はFPCNの有効期限切れ後の2020年9月以降から、オン・セミコンダクター セレンバン、マレーシアからの<br>製品を受け取ることになります。オン・セミコンダクター セレンバンからの製品は、オン・セミコンダクターのマーキングフ<br>ォーマットに従う製品マーキングにより識別できます。<br>~~a ee~~||
|変更カテゴリ：組立の変更,検査の変更||
|変更サブカテゴリ：製造拠点の追加<br>~~TO~~||
|影響を受ける拠点： <br>~~OO~~||
|オン・セミコンダクター拠点：|外部製造工場**/**下請業者拠点：|
|ON Semiconductor Seremban, Malaysia|無し|



## 説明および目的： 

この最終通知は、汎用トランジスタおよび BRT の SC88 パッケージの製造拠点として、楽山フェニックス・セミコンダクターに加えて オン・セミコンダクター セレン バン、マレーシア を追加認定することをお知らせするものです。 

今回の変更に伴う製品材料の変更はありません。 

||変更前の表記|変更後の表記|
|---|---|---|
|組立拠点|ON Semiconductor Leshan, China|ON Semiconductor Leshan, China<br>ON Semiconductor Seremban, Malaysia|
|検査拠点|ON Semiconductor Leshan, China|ON Semiconductor Leshan, China<br>ON Semiconductor Seremban, Malaysia|



本通知にリストされている製品は引き続き鉛フリー、ハロゲン化合物フリーであり、RoHS に適合しています。 

認定試験は、移管された製品の信頼性が引き続きオン・セミコンダクターの基準以上となることを証明するように設計されています。 

1/4 ページ 

TEM001793 Rev. C 

最終製品 **/** プロセス変更通知 文書番号 **#** ： FPCN23343X 発行日： 30 Jul 2020 

## 信頼性データの要約 **:** 

|デバイス名**:BC856DW1T1G**||||
|---|---|---|---|
|**RMS          :V57602**||||
|パッケージ：**SC-88 6L EUTECTIC**||||
|テスト<br>仕様<br>条件<br>間隔<br>結果<br>HTRB<br>JESD22-A108<br>Ta=125°C, 100 % max rated V<br>1008 hrs<br>0/154<br>H3TRB<br>JESD22-A101<br>Ta=85°C, 85% / 80% max rated V<br>1008 hrs<br>0/154<br>HTSL<br>JESD22-A103<br>Ta= 150°C<br>1008 hrs<br>0/154<br>TC<br>JESD22-A104<br>Ta= -55°C to 150°C<br>500 cyc<br>0/154<br>AC<br>JESD22-A102<br>121°C, 100% RH<br>96 hrs<br>0/154<br>IOL<br>MIL STD750<br>(M1037)<br>AECQ101<br>Ta=+25°C, deltaTj=100°C<br>On/Off = 2 min<br>15000 cyc<br>0/154<br>PC<br>J-STD-020  JESD-A113<br>MSL 1 @ 260 °C<br>0/616<br>RSH<br>JESD22- B106<br>Ta = 265C, 10 sec<br>0/60<br>~~7~~||||
|デバイス名**: MBT2222ADW1T1G**||||
|**RMS          :V57782**||||
|パッケージ**:SC-88 6L EUTECTIC**||||
|テスト<br>仕様<br>条件<br>間隔<br>結果<br>HTRB<br>JESD22-A108<br>Ta=125°C, 100 % max rated V<br>1008 hrs<br>0/77<br>H3TRB<br>JESD22-A101<br>Ta=85°C, 85% / 80% max rated V<br>1008 hrs<br>0/77<br>HTSL<br>JESD22-A103<br>Ta= 150°C<br>1008 hrs<br>0/77<br>TC<br>JESD22-A104<br>Ta= -55°C to 150°C<br>500 cyc<br>0/77<br>AC<br>JESD22-A102<br>121°C, 100% RH<br>96 hrs<br>0/77<br>IOL<br>MIL STD750<br>(M1037)<br>AECQ101<br>Ta=+25°C, deltaTj=100°C<br>On/Off = 2 min<br>15000 cyc<br>0/77<br>PC<br>J-STD-020  JESD-A113<br>MSL 1 @ 260 °C<br>0/308<br>RSH<br>JESD22- B106<br>Ta = 265C, 10 sec<br>0/30<br>~~TT~~||||
|デバイス名**: MUN5135DW1T1G**||||
|**RMS          :L57789**||||
|パッケージ**:SC-88 6L EUTECTIC**||||
|テスト<br>仕様<br>条件<br>間隔<br>結果<br>HTRB<br>JESD22-A108<br>Ta=125°C, 100 % max rated V<br>1008 hrs<br>0/154<br>HTSL<br>JESD22-A103<br>Ta= 150°C<br>1008 hrs<br>0/154<br>HAST<br>JESD22-A110<br>110°C, 85% RH, 18.8psig, bias<br>264 hrs<br>0/154<br>TC<br>JESD22-A104<br>Ta= -55°C to 150°C<br>500 cyc<br>0/154<br>uHAST<br>JESD22-A118<br>110°C, 85% RH, 18.8psig, unbias<br>264 hrs<br>0/154<br>IOL<br>MIL STD750<br>(M1037)<br>AECQ101<br>Ta=+25°C, deltaTj=100°C<br>On/Off = 2 min<br>15000 cyc<br>0/154<br>PC<br>J-STD-020  JESD-A113<br>MSL 1 @ 260 °C<br>0/616<br>RSH<br>JESD22- B106<br>Ta = 265C,10 sec<br>0/60<br>~~te~~||||
|TEM001793 Rev. C|2/4ページ|||



## 最終製品 **/** プロセス変更通知 文書番号 **#** ： FPCN23343X 発行日： 30 Jul 2020 

デバイス名 **: MUN5135DW1T1G RMS: L57787** パッケージ： **SC-88 6L EUTECTIC** 

|テスト|仕様|条件|間隔|結果|
|---|---|---|---|---|
|HTRB|JESD22-A108|Ta=125°C, 100 % max rated V|1008 hrs|0/154|
|HTSL|JESD22-A103|Ta= 150°C|1008 hrs|0/154|
|HAST|JESD22-A110|110°C, 85% RH, 18.8psig, bias|264 hrs|0/154|
|TC|JESD22-A104|Ta= -55°C to 150°C|500 cyc|0/154|
|uHAST|JESD22-A118|110°C, 85% RH, 18.8psig, unbias|264 hrs|0/154|
|IOL|MIL STD750<br>(M1037)<br>AECQ101|Ta=+25°C, deltaTj=100°C<br>On/Off = 2 min|15000 cyc|0/154|
|PC|J-STD-020  JESD-A113|MSL 1 @ 260 °C||0/616|
|RSH|JESD22- B106|Ta = 265C, 10 sec||0/60|



## 電気的特性の要約： 電気的特性への影響はありません。 ~~co~~ 

## 影響を受ける部品の一覧： 

注: 部品一覧には標準部品番号 (既製品) のみが記載されています。本 PCN の影響を受けるカスタム部品番号は、PCN メールで提供される顧客個別の付録、または PCN カスタマイズポータルに記載されています。 

|部品番号|認定試験用ビークル|
|---|---|
|MUN5335DW1T1G|MUN5235DW1T1G|
|MUN5335DW1T2G|MUN5235DW1T1G|
|MUN5336DW1T1G|MUN5235DW1T1G|
|BC846BDW1T1G|MBT2222ADW1T1G|
|BC846BPDW1T1G|MBT2222ADW1T1G|
|BC847BDW1T1G|MBT2222ADW1T1G|
|BC847BDW1T3G|MBT2222ADW1T1G|
|BC847BPDW1T1G|MBT2222ADW1T1G|
|BC847BPDW1T2G|MBT2222ADW1T1G|
|MUN5111DW1T1G|MUN5135DW1T1G|
|MUN5113DW1T1G|MUN5135DW1T1G|
|MUN5114DW1T1G|MUN5135DW1T1G|
|MUN5115DW1T1G|MUN5135DW1T1G|
|MUN5116DW1T1G|MUN5135DW1T1G|
|MUN5133DW1T1G|MUN5135DW1T1G|
|MUN5135DW1T1G|MUN5135DW1T1G|
|MUN5211DW1T1G|MUN5235DW1T1G|
|MUN5212DW1T1G|MUN5235DW1T1G|



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TEM001793 Rev. C 

## 最終製品 **/** プロセス変更通知 文書番号 **#** ： FPCN23343X 発行日： 30 Jul 2020 

|MUN5213DW1T1G|MUN5235DW1T1G|
|---|---|
|MUN5214DW1T1G|MUN5235DW1T1G|
|MUN5215DW1T1G|MUN5235DW1T1G|
|MUN5216DW1T1G|MUN5235DW1T1G|
|MUN5230DW1T1G|MUN5235DW1T1G|
|MUN5231DW1T1G|MUN5235DW1T1G|
|MUN5232DW1T1G|MUN5235DW1T1G|
|MUN5233DW1T1G|MUN5235DW1T1G|
|MUN5235DW1T1G|MUN5235DW1T1G|
|MUN5237DW1T1G|MUN5235DW1T1G|
|MUN5311DW1T1G|MUN5235DW1T1G|
|MUN5311DW1T2G|MUN5235DW1T1G|
|MUN5312DW1T1G|MUN5235DW1T1G|
|MUN5313DW1T1G|MUN5235DW1T1G|
|MUN5314DW1T1G|MUN5235DW1T1G|
|MUN5316DW1T1G|MUN5235DW1T1G|
|MUN5330DW1T1G|MUN5235DW1T1G|
|MUN5332DW1T1G|MUN5235DW1T1G|
|MUN5333DW1T1G|MUN5235DW1T1G|
|BC847BPDW1T3G|MBT2222ADW1T1G|
|BC847CDW1T1G|MBT2222ADW1T1G|
|BC848CDW1T1G|MBT2222ADW1T1G|
|BC848CPDW1T1G|MBT2222ADW1T1G|
|BC856BDW1T1G|BC856BDW1T1G|
|BC857BDW1T1G|BC856BDW1T1G|
|BC857CDW1T1G|BC856BDW1T1G|
|MBT2222ADW1T1G|MBT2222ADW1T1G|
|MBT3904DW1T1G|MBT2222ADW1T1G|
|MBT3904DW1T3G|MBT2222ADW1T1G|
|MBT3906DW1T1G|BC856BDW1T1G|
|MBT3946DW1T1G|MBT2222ADW1T1G|
|MBT3946DW1T2G|MBT2222ADW1T1G|
|MBT6429DW1T1G|MBT2222ADW1T1G|
|NST45010MW6T1G|BC856BDW1T1G|
|NST45011MW6T1G|MBT2222ADW1T1G|
|UMZ1NT1G|MBT2222ADW1T1G|



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## Links

- [View this product on Novapart](https://novapart.co/products/MBT2222ADW1T1G/bipolar-transistor-array-dual-npn-40-v-600-ma-150)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/on-semiconductor/mbt2222adw1t1g/bipolar-transistor-npn-dual-40v/dp/2464065)
---

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