# Schottky Rectifier, 100 V, 3 A, Single, DO-214AB (SMC), 2 Pins, 790 mV ![Product image](https://novapart.co/image/farnell:1459075RL/) **URL**: https://novapart.co/products/MBRS3100T3G/schottky-rectifier-100-v-3-a-single-do-214ab-smc-2 **SKU**: MBRS3100T3G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes **Price**: €0.2050 **Stock**: 1000+ **Lead Time**: 125 days (indicative) ## Description Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):3A; Diode Configuration:Single; Diode Case Style:DO-214AB; No. of Pins:2Pins; Forward Voltage VF Max:790mV; Forward Surge C ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 2Pins | | Product Range | MBRS3 | | Qualification | AEC-Q101 | | Diode Mounting | Surface Mount | | Diode Case Style | DO-214AB (SMC) | | Diode Configuration | Single | | Forward Voltage Max | 790mV | | Forward Surge Current | 130A | | Average Forward Current | 3A | | Operating Temperature Max | 175°C | | Repetitive Peak Reverse Voltage | 100V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:1459075RL/) ## MBRS3100T3G, NRVBS3100T3G ## Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. ## **www.onsemi.com** **SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 100 VOLTS** ## **Features** - Small Compact Surface Mountable Package with J−Bend Leads - Rectangular Package for Automated Handling - Highly Stable Oxide Passivated Junction - Excellent Ability to Withstand Reverse Avalanche Energy Transients ## **SMC 2−LEAD CASE 403AC** - Guard−Ring for Stress Protection - NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **Mechanical Characteristics** - Case: Epoxy, Molded - Weight: 217 mg (Approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds - Polarity: Notch in Plastic Body Indicates Cathode Lead - ESD Ratings: ## **MARKING DIAGRAM** |||||AYWW
B310|| |---|---|---|---|---|---| ||||||| |B310|= Specific Device Code||= Specific Device Code||| |A|= Assembly Location**||= Assembly Location**||| |Y|= Year||= Year||| |WW|= Work Week||= Work Week||| ||= Pb−Free Package||= Pb−Free Package||| (Note: Microdot may be in either location) - ** The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. - ♦ Machine Model = C - ♦ Human Body Model = 3B ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |MBRS3100T3G|SMC 2−Lead
(Pb−Free)|2,500 /
Tape & Reel| |NRVBS3100T3G*|SMC 2−Lead
(Pb−Free)|2,500 /
Tape & Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **MBRS3100T3/D** **1** © Semiconductor Components Industries, LLC, 2012 **May, 2017 − Rev. 5** **MBRS3100T3G, NRVBS3100T3G** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage|VRRM
VRWM
VR|100|V| |Average Rectified Forward Current
(At Rated VR, TL= 100°C)|IF(AV)|3.0|A| |Non−repetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)|IFSM|130|A| |Operating Junction Temperature Range (Note 1)|TJ|−65 to +175|°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R � JA. ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Thermal Resistance, Junction−to−Lead|R�JL|11|°C/W| ## **ELECTRICAL CHARACTERISTICS** |**ELECTRICAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Maximum Instantaneous Forward Voltage (Note 2)
(iF= 3.0 A, TJ= 25°C)
(iF= 6.0 A, TJ= 25°C)
(iF= 3.0 A, TJ= 125°C)
(iF= 6.0 A, TJ= 125°C)|VF|0.79
0.90
0.62
0.70|V| |Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ= 25°C)
(Rated dc Voltage, TJ= 125°C)|iR|0.05
5.0|mA| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. **www.onsemi.com** **2** **MBRS3100T3G, NRVBS3100T3G** ## **TYPICAL CHARACTERISTICS** **==> picture [490 x 586] intentionally omitted <==** **----- Start of picture text -----**
10 10
125 ° C 75 ° C25 ° C 125 ° C 75 ° C 25 ° C
1 1
0.1 0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
1E−03 1000
125 ° C TJ = 25 ° C
1E−04
1E−05 75 ° C
100
1E−06
1E−07 25 ° C
1E−08 10
0 20 40 60 80 100 0 20 40 60 80 100
VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current Figure 4. Typical Capacitance
7 4.5
RATED VOLTAGE APPLIED
6 R � JL = 11 ° C/W 4 dc
TJ = 150 ° C 3.5
5
3
dc SQUARE WAVE
4 2.5
3 2
SQUARE WAVE
1.5
2
1
1
0.5
0 0
90 100 110 120 130 140 150 160 170 180 0 1 2 3 4 5 6
TL, LEAD TEMPERATURE ( ° C) IO, AVERAGE FORWARD CURRENT (A)
CURRENT (A) CURRENT (A)
, INSTANTANEOUS FORWARD , INSTANTANEOUS FORWARD
IF IF
C, CAPACITANCE (pF)
, REVERSE CURRENT (A)
IR
(W)
CURRENT (A)
, AVERAGE FORWARD
IF
, AVERAGE POWER DISSIPATION
fo
P
**----- End of picture text -----**
**Figure 5. Current Derating − Lead** **Figure 6. Forward Power Dissipation** **www.onsemi.com** **3** **MBRS3100T3G, NRVBS3100T3G** ## **PACKAGE DIMENSIONS** **SMC 2−LEAD** CASE 403AC ISSUE A **==> picture [159 x 19] intentionally omitted <==** **----- Start of picture text -----**
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
**----- End of picture text -----**
**==> picture [462 x 169] intentionally omitted <==** **----- Start of picture text -----**
HE 1. DIMENSIONING AND TOLERANCING PER ANME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
E 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD
FLASH SHALL NOT EXCEED 0.254mm PER SIDE.
= . 4. DIMENSIONS D AND E TO BE DETERMINED AT DATUM H.
5. DIMENSION b SHALL BE MEASURED WITHIN THE AREA
mz DETERMINED BY DIMENSION L.
MILLIMETERS INCHES
D DIM MIN MAX MIN MAX
A 1.95 2.61 0.077 0.103
A1 c A1 0.05 0.20 0.002 0.008
1 CD DETAIL A ——_—— A2 1.90 2.41 0.075 0.095
b 2.90 3.20 0.114 0.126
TOP VIEW c 0.15 0.41 0.060 0.016
D 5.55 6.25 0.219 0.246
DETAIL A E 6.60 7.15 0.260 0.281
H E 7.75 8.15 0.305 0.321
A2 A ——— L 0.75 1.60 0.030 0.063
rf 4 ———
L b
SIDE VIEW END VIEW
**----- End of picture text -----**
**==> picture [226 x 159] intentionally omitted <==** **----- Start of picture text -----**
RECOMMENDED
SOLDERING FOOTPRINT*
8.750
0.344
en
3.790
2X
0.149
-
ott ot
2X 2.250 mm SCALE 4:1
ma 0.089 inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
**----- End of picture text -----**
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