# Schottky Rectifier, General Purpose, 90 V, 1 A, Single, DO-214AA (SMB), 2 Pins, 750 mV

![Product image](https://novapart.co/image/farnell:1459071RL/)

**URL**: https://novapart.co/products/MBRS190T3G/schottky-rectifier-general-purpose-90-v-1-a-single
**SKU**: MBRS190T3G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes
**Price**: €0.1580
**Stock**: 500+
**Lead Time**: 141 days (indicative)

## Description

Repetitive Reverse Voltage Vrrm Max:90V; Forward Current If(AV):1A; Diode Configuration:Single; Diode Case Style:DO-214AA; No. of Pins:2Pins; Forward Voltage VF Max:750mV; Forward Surge Current

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 2Pins |
| Product Range | MBRS1 |
| Qualification | AEC-Q101 |
| Diode Mounting | Surface Mount |
| Diode Case Style | DO-214AA (SMB) |
| Diode Configuration | Single |
| Forward Voltage Max | 750mV |
| Forward Surge Current | 50A |
| Average Forward Current | 1A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 90V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1459071RL/)

## MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G 

## Schottky Power Rectifier **Surface Mount Power Package** 

Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. These state-of-the-art devices have the following features: 

## **Features** 

- Small Compact Surface Mountable Package with J-Bend Leads 

**www.onsemi.com** 

**SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 90, 100 VOLTS** 

**SMB CASE 403A** 

- Rectangular Package for Automated Handling 

- Highly Stable Oxide Passivated Junction 

## **MARKING DIAGRAM** 

- High Blocking Voltage − 100 Volts 

- 175°C Operating Junction Temperature 

- Guardring for Stress Protection 

**==> picture [26 x 17] intentionally omitted <==**

**----- Start of picture text -----**<br>
AYWW<br>B1x<br>**----- End of picture text -----**<br>


- AEC−Q101 Qualified and PPAP Capable 

- These are Pb−Free Devices 

## **Mechanical Characteristics** 

- Case: Epoxy, Molded 

- Weight: 95 mg (approximately) 

- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

- Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 

- Shipped in 12 mm Tape and Reel, 2,500 units per reel 

- Cathode Polarity Band 

- B1 = Device Code 

- x = C for MBRS1100T3 9 for MBRS190T3 

- A = Assembly Location** 

- Y = Year WW = Work Week = Pb−Free Package 

(Note: Microdot may be in either location) 

**The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 2 of this data sheet. 

Publication Order Number: **MBRS1100T3/D** 

**1** 

© Semiconductor Components Industries, LLC, 2015 **May, 2017 − Rev. 12** 

**MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage<br>MBRS190T3<br>MBRS1100T3|VRRM<br>VRWM<br>VR|90<br>100|V|
|Average Rectified Forward Current<br>TL= 163°C<br>TL= 148°C|IF(AV)|1.0<br>2.0|A|
|Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|50|A|
|Operating Junction Temperature (Note 1)|TJ|−65 to +175|°C|
|Voltage Rate of Change|dv/dt|10|V/ns|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R � JA. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Thermal Resistance − Junction−to−Lead (TL= 25°C)|R�JL|22|°C/W|
|**ELECTRICAL CHARACTERISTICS**||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Maximum Instantaneous Forward Voltage (Note 2) (iF= 1.0 A, TJ= 25°C)|VF|0.75|V|
|Maximum Instantaneous Reverse Current (Note 2)<br>(Rated dc Voltage, TJ = 25°C)<br>(Rated dc Voltage, TJ= 100°C)|IR|0.5<br>5.0|mA|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. 

## **ORDERING INFORMATION** 

|**Device**|**Marking**|**Package**|**Shipping**†|
|---|---|---|---|
|MBRS1100T3G|B1C|SMB<br>(Pb−Free)|2500 / Tape & Reel|
|SBRS81100T3G*|B1C|SMB<br>(Pb−Free)|2500 / Tape & Reel|
|MBRS190T3G|B19|SMB<br>(Pb−Free)|2500 / Tape & Reel|
|SBRS8190T3G*|B19|SMB<br>(Pb−Free)|2500 / Tape & Reel|
|SBRS1100T3G|B19|SMB<br>(Pb−Free)|2500 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

*SBRS8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 

**www.onsemi.com** 

**2** 

**MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G** 

## **TYPICAL ELECTRICAL CHARACTERISTICS** 

**==> picture [491 x 414] intentionally omitted <==**

**----- Start of picture text -----**<br>
20 1k<br>400<br>10<br>200<br>5 TJ = 150°C 100 TJ = 150°C<br>40 125°C<br>2 20<br>100°C 10 100°C<br>1<br>4<br>0.5 25°C 2<br>1<br>0.2 0.4<br>0.2<br>0.1<br>0.1<br>0.05 0.04<br>0.02 25°C<br>0.01<br>0.02 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 10 20 30 40 50 60 70 80 90 100<br>vF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current*<br>*The curves shown are typical for the highest voltage device in the voltage<br>grouping. Typical reverse current for lower voltage selections can be estimated<br>from these curves if VR is sufficient below rated VR.<br>3.2 2.0<br>2.8<br>TJ = 100°C DC<br>2.4 1.5<br>2.0<br>SQUARE<br>1.6 WAVE 1.0 SQUARE<br>WAVE<br>1.2 DC<br>0.8 0.5<br>0.4<br>0 0<br>0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 145 150 155 160 165 170 175 180<br>IF(AV), AVERAGE FORWARD CURRENT (AMPS) TL, LEAD TEMPERATURE (°C)<br>A)<br>μ<br>IR, REVERSE CURRENT (<br>i   , INSTANTANEOUS FORWARD CURRENT (AMPS)F<br>P         , AVERAGE POWER DISSIPATION (WATTS)F(AV) I          , AVERAGE FORWARD CURRENT (AMPS)F(AV)<br>**----- End of picture text -----**<br>


**Figure 3. Power Dissipation** 

**Figure 4. Current Derating, Lead** 

**==> picture [267 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
280<br>260<br>240 NOTE:  TYPICAL CAPACITANCE<br>220 NOTE:  AT 0 V = 270 pF<br>200<br>180<br>160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0.1 0.2 0.5 1 2 5 10 20 50 100<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 5. Typical Capacitance** 

**www.onsemi.com** 

**3** 

**MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G** 

## **PACKAGE DIMENSIONS** 

**==> picture [474 x 391] intentionally omitted <==**

**----- Start of picture text -----**<br>
SMB<br>CASE 403A−03<br>ISSUE J<br>HE<br>NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>E 2. CONTROLLING DIMENSION: INCH.<br>3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>A 1.95 2.30 2.47 0.077 0.091 0.097<br>= > b D ——— A1 0.05 0.10 0.20 0.002 0.004 0.008<br>b 1.96 2.03 2.20 0.077 0.080 0.087<br>c 0.15 0.23 0.31 0.006 0.009 0.012<br>D 3.30 3.56 3.95 0.130 0.140 0.156<br>E 4.06 4.32 4.60 0.160 0.170 0.181<br>i: POLARITY INDICATOROPTIONAL AS NEEDED H E 5.21 5.44 5.60 0.205 0.214 0.220<br>L 0.76 1.02 1.60 0.030 0.040 0.063<br>L1 0.51 REF 0.020 REF<br>A<br>A1<br>eh L L1 c [Ho] S S<br>SOLDERING FOOTPRINT*<br>2.261<br>0.089<br>F<br>7 2.743<br>0.108<br>|<br>2.159<br>0.085 mm<br>SCALE 8:1<br>cs (—) inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative 

## **LITERATURE FULFILLMENT** : 

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**MBRS1100T3/D** 

**4** 



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