# Schottky Rectifier, 100 V, 1 A, Single, DO-214AA (SMB), 2 Pins, 750 mV

![Product image](https://novapart.co/image/farnell:9555862/)

**URL**: https://novapart.co/products/MBRS1100T3G/schottky-rectifier-100-v-1-a-single-do-214aa-smb-2
**SKU**: MBRS1100T3G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes
**Price**: €0.1010
**Stock**: 1000+
**Lead Time**: 83 days (indicative)

## Description

Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):1A; Diode Configuration:Single; Diode Case Style:DO-214AA; No. of Pins:2Pins; Forward Voltage VF Max:750mV; Forward Surge C

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 2Pins |
| Product Range | - |
| Qualification | - |
| Diode Mounting | Surface Mount |
| Diode Case Style | DO-214AA (SMB) |
| Diode Configuration | Single |
| Forward Voltage Max | 750mV |
| Forward Surge Current | 50A |
| Average Forward Current | 1A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 100V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9555862/)

Schottky Power Rectifier **Surface Mount Power Package** 

## MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G, SBRS81100N, SBRS8190N 

Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. These state-of-the-art devices have the following features: 

## **Features** 

- Small Compact Surface Mountable Package with J-Bend Leads 

## **www.onsemi.com** 

**SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 90, 100 VOLTS** 

**SMB CASE 403A** 

- Rectangular Package for Automated Handling 

- Highly Stable Oxide Passivated Junction 

## **MARKING DIAGRAM** 

- High Blocking Voltage − 100 Volts 

- 175°C Operating Junction Temperature 

- Guardring for Stress Protection 

**==> picture [26 x 16] intentionally omitted <==**

**----- Start of picture text -----**<br>
AYWW<br>B1x<br>**----- End of picture text -----**<br>


- AEC−Q101 Qualified and PPAP Capable 

- These are Pb−Free Devices 

## **Mechanical Characteristics** 

- Case: Epoxy, Molded 

- Weight: 95 mg (approximately) 

- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

- Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 

- Shipped in 12 mm Tape and Reel, 2,500 units per reel 

- Cathode Polarity Band 

- B1 = Device Code 

x = C for MBRS1100T3 9 for MBRS190T3 

- A = Assembly Location** 

Y = Year WW = Work Week = Pb−Free Package 

(Note: Microdot may be in either location) 

**The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 2 of this data sheet. 

Publication Order Number: **MBRS1100T3/D** 

**1** 

© Semiconductor Components Industries, LLC, 2015 **March, 2020 − Rev. 15** 

## **MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G, SBRS81100N, SBRS8190N** 

## **MAXIMUM RATINGS** 

|<br>**SBRS8190N**<br>**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage<br>MBRS190T3<br>MBRS1100T3|VRRM<br>VRWM<br>VR|90<br>100|V|
|Average Rectified Forward Current<br>TL= 163°C<br>TL= 148°C|IF(AV)|1.0<br>2.0|A|
|Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|50|A|
|Operating Junction Temperature (Note 1)|TJ|−65 to +175|°C|
|Voltage Rate of Change|dv/dt|10|V/ns|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R � JA. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Thermal Resistance − Junction−to−Lead (TL= 25°C)|R�JL|22|°C/W|
|**ELECTRICAL CHARACTERISTICS**||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Maximum Instantaneous Forward Voltage (Note 2) (iF= 1.0 A, TJ= 25°C)|VF|0.75|V|
|Maximum Instantaneous Reverse Current (Note 2)<br>(Rated dc Voltage, TJ = 25°C)<br>(Rated dc Voltage, TJ= 100°C)|IR|0.5<br>5.0|mA|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. 

## **ORDERING INFORMATION** 

|**Device**|**Marking**|**Package**|**Shipping**†|
|---|---|---|---|
|MBRS1100T3G|B1C|SMB<br>(Pb−Free)|2500 / Tape & Reel|
|SBRS81100T3G*|B1C|SMB<br>(Pb−Free)|2500 / Tape & Reel|
|SBRS81100T3G−VF01*|B1C|SMB<br>(Pb−Free)|2500 / Tape & Reel|
|MBRS190T3G|B19|SMB<br>(Pb−Free)|2500 / Tape & Reel|
|SBRS8190T3G*|B19|SMB<br>(Pb−Free)|2500 / Tape & Reel|
|SBRS81100NT3G*|B1C|SMB<br>(Pb−Free)|2500 / Tape & Reel|
|SBRS8190NT3G*|B19|SMB<br>(Pb−Free)|2500 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

*SBRS8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 

**www.onsemi.com** 

**2** 

**MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G, SBRS81100N, SBRS8190N** 

## **TYPICAL ELECTRICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
20<br>10<br>5 TJ = 150°C<br>2<br>100°C<br>1<br>0.5 25°C<br>0.2<br>0.1<br>0.05<br>0.02 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3<br>vF, INSTANTANEOUS VOLTAGE (VOLTS)<br>i   , INSTANTANEOUS FORWARD CURRENT (AMPS)F<br>**----- End of picture text -----**<br>


**Figure 1. Typical Forward Voltage** 

**==> picture [252 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
1k<br>400<br>200<br>100 TJ = 150°C<br>40 125°C<br>20<br>10 100°C<br>4<br>2<br>1<br>0.4<br>0.2<br>0.1<br>0.04<br>0.02 25°C<br>0.01<br>0 10 20 30 40 50 60 70 80 90 100<br>VR, REVERSE VOLTAGE (VOLTS)<br>A)<br>μ<br>IR, REVERSE CURRENT (<br>**----- End of picture text -----**<br>


**Figure 2. Typical Reverse Current*** 

*The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these curves if VR is sufficient below rated VR. 

**==> picture [491 x 176] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.2 2.0<br>2.8<br>TJ = 100°C DC<br>2.4 1.5<br>2.0<br>SQUARE<br>1.6 WAVE 1.0 SQUARE<br>WAVE<br>1.2 DC<br>0.8 0.5<br>0.4<br>0 0<br>0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 145 150 155 160 165 170 175 180<br>IF(AV), AVERAGE FORWARD CURRENT (AMPS) TL, LEAD TEMPERATURE (°C)<br>P         , AVERAGE POWER DISSIPATION (WATTS)F(AV) I          , AVERAGE FORWARD CURRENT (AMPS)F(AV)<br>**----- End of picture text -----**<br>


**Figure 3. Power Dissipation** 

**Figure 4. Current Derating, Lead** 

**==> picture [267 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
280<br>260<br>240 NOTE:  TYPICAL CAPACITANCE<br>220 NOTE:  AT 0 V = 270 pF<br>200<br>180<br>160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0.1 0.2 0.5 1 2 5 10 20 50 100<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 5. Typical Capacitance** 

**www.onsemi.com** 

**3** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**SMB** CASE 403A−03 ISSUE J 

DATE 19 JUL 2012 

**==> picture [479 x 403] intentionally omitted <==**

**----- Start of picture text -----**<br>
SCALE 1:1 SCALE 1:1<br>Polarity Band Non−Polarity Band<br>HE<br>NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>E 2. CONTROLLING DIMENSION: INCH.<br>3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>A 1.95 2.30 2.47 0.077 0.091 0.097<br>= b D SS A1 0.05 0.10 0.20 0.002 0.004 0.008<br>b 1.96 2.03 2.20 0.077 0.080 0.087<br>c 0.15 0.23 0.31 0.006 0.009 0.012<br>D 3.30 3.56 3.95 0.130 0.140 0.156<br>E 4.06 4.32 4.60 0.160 0.170 0.181<br>as POLARITY INDICATOROPTIONAL AS NEEDED H E 5.21 5.44 5.60 0.205 0.214 0.220<br>L 0.76 1.02 1.60 0.030 0.040 0.063<br>L1 0.51 REF 0.020 REF<br>A GENERIC<br>MARKING DIAGRAM*<br>A1<br>L L1 c<br>AYWW AYWW<br>XXXXX XXXXX<br>ae Qo (Lal.<br>SOLDERING FOOTPRINT*<br>Polarity Band Non−Polarity Band<br>2.261<br>0.089 XXXXX = Specific Device Code<br>—— A = Assembly Location<br>Y = Year<br>WW = Work Week<br>= Pb−Free Package<br>2.743<br>(Note: Microdot may be in either location)<br>0.108<br>*This information is generic. Please refer to<br>device data sheet for actual part marking.<br>Lrt Pb−Free indicator, “G” or microdot “ ”, |<br>2.159 may or may not be present.<br>0.085 mm<br>SCALE 8:1<br>c— (—) inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

**DOCUMENT NUMBER: 98ASB42669B DESCRIPTION: SMB** [[_ 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**PAGE 1 OF 1** 

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© Semiconductor Components Industries, LLC, 2019 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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◊ 

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