MBRF2545CTG

## Switch-mode Schottky Power Rectifier 

## MBRF2545CTG 

The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency switching power supplies, free wheeling diodes and polarity protection diodes. 

## **Features** 

- Highly Stable Oxide Passivated Junction 

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**SCHOTTKY BARRIER RECTIFIER 25 AMPERES, 45 VOLTS** 

- Very Low Forward Voltage Drop 

- Matched Dual Die Construction 

- High Junction Temperature Capability 

- High dv/dt Capability 

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- Excellent Ability to Withstand Reverse Avalanche Energy Transients 

- Guardring for Stress Protection 

- Epoxy Meets UL 94 V−0 @ 0.125 in 

- Electrically Isolated 

- No Isolation Hardware Required 

- These Devices are Pb−Free and are RoHS Compliant 

## **Mechanical Characteristics:** 

- Case: Epoxy, Molded 

- Weight: 1.9 Grams (Approximately) 

- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

- Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 

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MARKING<br>DIAGRAM<br>AYWW<br>B2545G<br>AKA<br>1<br>bd 2 Ss<br>3<br>TO−220 FULLPAK<br>CASE 221D<br>**----- End of picture text -----**<br>


A = Assembly Location Y = Year WW = Work Week B2545 = Device Code G = Pb−Free Package AKA = Diode Polarity 

|**Device**<br>~~et~~|**Package**<br>~~et~~|**Shipping**<br>~~et~~|
|---|---|---|
|MBRF2545CTG<br>~~et~~|MBRF2545CTG<br>TO−220<br>(Pb−Free)<br>~~et~~|50 Units/Rail<br>~~et~~|



Publication Order Number: **MBRF2545CT/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **July, 2020 − Rev. 10** 

**MBRF2545CTG** 

## **MAXIMUM RATINGS** (Per Leg) 

|**MAXIMUM RATINGS**(Per Leg)||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|45|V|
|Average Rectified Forward Current<br>(Rated VR), TC= 125°C<br>Total Device|IF(AV)|12.5<br>25|A|
|Peak Repetitive Forward Current<br>(Rated VR, Square Wave, 20 kHz), TC= 125°C|IFRM|25|A|
|Non−repetitive Peak Surge Current<br>(Surge applied at rated load conditions halfwave, single phase, 60 Hz)|IFSM|150|A|
|Peak Repetitive Reverse Surge Current (2.0�s, 1.0 kHz)|IRRM|1.0|A|
|Operating Junction and Storage Temperature (Note 1)|TJ, Tstg|−65 to +175|°C|
|Voltage Rate of Change (Rated VR)|dv/dt|10000|V/�s|
|RMS Isolation Voltage (t = 0.3 second, R.H.≤30%, TA= 25°C) (Note 2)<br>Per Figure 3|Viso1|4500|V|
|**THERMAL CHARACTERISTICS**(Per Leg)||||
|Maximum Thermal Resistance, Junction−to−Case|R�JC|3.5|°C/W|
|Maximum Lead Temperature for Soldering Purposes: 1/8″from Case for 5 Seconds|TL|260|°C|
|**ELECTRICAL CHARACTERISTICS**(Per Leg)||||
|**Characteristic**|**Symbol**|**Max**|**Unit**|
|Maximum Instantaneous Forward Voltage (Note 3)<br>(iF= 12.5  A, TC= 25°C)<br>(iF= 12.5 A, TC= 125°C)|vF|0.7<br>0.62|V|
|Maximum Instantaneous Reverse Current (Note 3)<br>(Rated DC Voltage, TC= 25°C)<br>(Rated DC Voltage, TC= 125°C)|iR|0.2<br>40|mA|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R � JA. 

2. Proper strike and creepage distance must be provided. 

3. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. 

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100 100<br>70<br>50<br>20 TJ = 125°C 25°C 10 TJ = 125°C<br>7.010 100°C 1.0 100 � C<br>5.0 85°C<br>2.0<br>0.1<br>1.0<br>0.7<br>0.5 25°C<br>0.01<br>0.2<br>0.1<br>0.001<br>0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50<br>vF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>IR, REVERSE CURRENT (mA)<br>, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>iF<br>**----- End of picture text -----**<br>


**Figure 1. Typical Forward Voltage, Per Leg** 

**Figure 2. Typical Reverse Current, Per Leg** 

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**2** 

**MBRF2545CTG** 

## **TEST CONDITIONS FOR ISOLATION TEST*** 

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FULLY ISOLATED PACKAGE<br>LEADS<br>HEATSINK<br>0.110 �  MIN<br>**----- End of picture text -----**<br>


**Figure 3. Mounting Position** 

* Measurement made between leads and heatsink with all leads shorted together. 

## **MOUNTING INFORMATION** 

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CLIP<br>HEATSINK<br>Clip−Mounted<br>**----- End of picture text -----**<br>


**Figure 4. Typical Mounting Technique** 

FULLPAK is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. 

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**3** 

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MECHANICAL CASE OUTLINE<br>PACKAGE DIMENSIONS<br>TO−220 FULLPAK<br>CASE 221D−03<br>ISSUE K<br>S DATE 27 FEB 2009<br>NOTES:<br>−T− SEATINGPLANE 1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>−B− C 2. CONTROLLING DIMENSION: INCH<br>F 3. 221D-01 THRU 221D-02 OBSOLETE, NEW<br>S STANDARD 221D-03.<br>Q U INCHES MILLIMETERS<br>SCALE 1:1 DIM MIN MAX MIN MAX<br>A A 0.617 0.635 15.67 16.12<br>B 0.392 0.419 9.96 10.63<br>1 2 3 C 0.177 0.193 4.50 4.90<br>D 0.024 0.039 0.60 1.00<br>a H n ==So= F 0.116 0.129 2.95 3.28<br>−Y− G 0.100 BSC 2.54 BSC<br>K<br>H 0.118 0.135 3.00 3.43<br>J 0.018 0.025 0.45 0.63<br>hd ay : —<br>|| oe === K 0.503 0.541 12.78 13.73<br>G J L 0.048 0.058 1.23 1.47<br>N 0.200 BSC 5.08 BSC<br>N R Q 0.122 0.138 3.10 3.50<br>_ L R 0.099 0.117 2.51 2.96<br>S 0.092 0.113 2.34 2.87<br>D 3 PL U 0.239 0.271 6.06 6.88<br>0.25 (0.010) M B M Y<br>MARKING<br>DIAGRAMS<br>STYLE 1: STYLE 2: STYLE 3:<br>PIN 1. GATE PIN 1. BASE PIN 1. ANODE<br>2. DRAIN 2. COLLECTOR 2. CATHODE<br>3. SOURCE 3. EMITTER 3. ANODE<br>Qo Qo<br>STYLE 4: STYLE 5: STYLE 6: xxxxxxG AYWW<br>PIN 1. CATHODE PIN 1. CATHODE PIN 1. MT 1 AYWW xxxxxxG<br>2.3. ANODECATHODE  2. 3. ANODEGATE  2. 3. MT 2GATE AKA<br>tr | ot<br>Bipolar Rectifier<br>xxxxxx = Specific Device Code A = Assembly Location<br>G = Pb−Free Package Y = Year<br>A = Assembly Location WW = Work Week<br>Y = Year xxxxxx = Device Code<br>WW = Work Week G = Pb−Free Package<br>AKA = Polarity Designator<br>**----- End of picture text -----**<br>


Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42514B** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: TO−220 FULLPAK PAGE 1 OF 1** ~~ee~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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