# Schottky Rectifier, 200 V, 20 A, Dual Common Cathode, TO-220, 3 Pins, 1 V ![Product image](https://novapart.co/image/farnell:2535576/) **URL**: https://novapart.co/products/MBRF20200CTG/schottky-rectifier-200-v-20-a-dual-common-cathode **SKU**: MBRF20200CTG **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes **Price**: €0.7420 **Stock**: 100+ **Lead Time**: 78 days (indicative) ## Description Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):20A; Diode Configuration:Dual Common Cathode; Diode Case Style:TO-220; No. of Pins:3Pins; Forward Voltage VF Max:1V; Forw ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | MBRF2 | | Qualification | - | | Diode Mounting | Through Hole | | Diode Case Style | TO-220 | | Diode Configuration | Dual Common Cathode | | Forward Voltage Max | 1V | | Forward Surge Current | 150A | | Average Forward Current | 20A | | Operating Temperature Max | 150°C | | Repetitive Peak Reverse Voltage | 200V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2535576/) ## MBRF20200CTG ## Switch-mode Schottky Power Rectifier The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency switching power supplies, free wheeling diodes and polarity protection diodes. ## **Features** - Highly Stable Oxide Passivated Junction - Very Low Forward Voltage Drop - Matched Dual Die Construction - High Junction Temperature Capability - High dv/dt Capability - Guardring for Stress Protection - Epoxy Meets UL 94 V−0 @ 0.125 in - Electrically Isolated. No Isolation Hardware Required. - These Devices are Pb−Free and are RoHS Compliant ## **Mechanical Characteristics:** - Case: Epoxy, Molded - Weight: 1.9 Grams (Approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ## **www.onsemi.com** **SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS** **==> picture [133 x 180] intentionally omitted <==** **----- Start of picture text -----**
1
2
th 3
TO−220 FULLPAK
CASE 221AH
1 bd
2
3
MARKING DIAGRAM
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- Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds **==> picture [112 x 133] intentionally omitted <==** **----- Start of picture text -----**
AYWW
B20200G
A K A
rm
A = Assembly Location
Y = Year
WW = Work Week
B20200 = Device Code
G = Pb−Free Package
AKA = Polarity Designator
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- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **ORDERING INFORMATION Device Package Shipping** MBRF20200CTG TO−220 50 Units/Rail (Pb−Free) ~~ee~~ Publication Order Number: **MBRF20200CT/D** **1** © Semiconductor Components Industries, LLC, 2016 **July, 2016 − Rev. 8** **MBRF20200CTG** ## **MAXIMUM RATINGS** (Per Leg) |**Rating**|**Symbol**|**Value**|**Unit**| |---|---|---|---| |Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage|VRRM
VRWM
VR|200|V| |Average Rectified Forward Current
Per Leg
(Rated VR) TC= 125°C
Per Package|IF(AV)|10
20|A| |Peak Repetitive Forward Current, Per Leg
(Rated VR, Square Wave, 20 kHz) TC= 90°C|IFRM|20|A| |Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)|IFSM|150|A| |Peak Repetitive Reverse Surge Current (2.0�s, 1.0 kHz)|IRRM|1.0|A| |Operating Junction Temperature and Storage Temperature|TJ, Tstg|−65 to +150|°C| |Voltage Rate of Change (Rated VR)|dv/dt|10,000|V/�s| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **THERMAL CHARACTERISTICS** (Per Leg) |**THERMAL CHARACTERISTICS**(Per Leg)|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Thermal Resistance, Junction−to−Case|R�JC|3.5|°C/W| |**ELECTRICAL CHARACTERISTICS**(Per Leg)|||| |**Rating**|**Symbol**|**Max**|**Unit**| |Maximum Instantaneous Forward Voltage (Note 1)
(iF= 10 Amp, TC= 25°C)
(iF= 10 Amp, TC= 125°C)
(iF= 20 Amp, TC= 25°C)
(iF= 20 Amp, TC= 125°C)|vF|0.9
0.8
1.0
0.9|V| |Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TC= 25°C)
(Rated dc Voltage, TC= 125°C)|iR|1.0
50|mA| |**DYNAMIC CHARACTERISTICS**(Per Leg)|||| |Capacitance(VR= −5.0 V,TC= 25°C,Freq. = 1.0 MHz)|CT|500|pF| 1. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0% **==> picture [492 x 261] intentionally omitted <==** **----- Start of picture text -----**
100 10,000
70 TJ = 150 � C
1,000
50
TJ = 125 � C
TJ = 150°C 100
T J = 100 � C
20 10
TJ = 125°C 1
10
7
0.1
5 T J = 100°C TJ = 25 � C
0.01
0 20 40 60 80 100 120 140 160 180 200
TJ = 25°C VR, REVERSE CURRENT (VOLTS)
2
Figure 2. Typical Reverse Current (Per Leg)
1
0.2 0.4 0.6 0.8 1
vF, INSTANTANEOUS VOLTAGE (VOLTS)
μ
I , REVERSE CURRENT ( A)R
I , INSTANEOUS FORWARD CURRENT (AMP)F
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**Figure 1. Typical Forward Voltage (Per Leg)** **www.onsemi.com** **2** **MBRF20200CTG** ## **TEST CONDITION FOR ISOLATION TEST*** **==> picture [69 x 5] intentionally omitted <==** **----- Start of picture text -----**
FULLY ISOLATED PACKAGE
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**==> picture [122 x 59] intentionally omitted <==** **----- Start of picture text -----**
LEADS
HEATSINK
0.110 � MIN
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**Figure 3. Mounting Position** *Measurement made between leads and heatsink with all leads shorted together. ## **MOUNTING INFORMATION** **==> picture [111 x 177] intentionally omitted <==** **----- Start of picture text -----**
CLIP
HEATSIN-
K
Clip−Mounted
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**Figure 4. Typical Mounting Technique** **www.onsemi.com** **3** **MBRF20200CTG** ## **PACKAGE DIMENSIONS** **TO−220 FULLPACK, 3−LEAD** CASE 221AH ISSUE F **==> picture [444 x 211] intentionally omitted <==** **----- Start of picture text -----**
A B SEATINGPLANE NOTES:1. DIMENSIONING AND TOLERANCING PER ASME
E Y14.5M, 1994.
E/2 P A 2. CONTROLLING DIMENSION: MILLIMETERS.
0.14 M B A M H1 A1 3.4. CONTOUR UNCONTROLLED IN THIS AREA.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE
PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO
EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE
Q MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY.
D C 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION.
LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00.
1 2 3 NOTE 3 6. CONTOURS AND FEATURES OF THE MOLDED PACKAGE BODY
MAY VARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1
AND H1 FOR MANUFACTURING PURPOSES.
L L1 MILLIMETERS
DIM MIN MAX
A 4.30 4.70
A1 2.50 2.90
+ Le 3X b c —>| A2 2.50 2.90
3X b2 0.25 M B A M C A2 b2b 0.541.10 0.841.40
c 0.49 0.79
e SIDE VIEW D 14.70 15.30
FRONT VIEW E 9.70 10.30
e 2.54 BSC
H1 6.60 7.10
L 12.50 14.73
L1 --- 2.80
P 3.00 3.40
SECTION D−D Q 2.80 3.20
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**==> picture [226 x 126] intentionally omitted <==** **----- Start of picture text -----**
A
NOTE 6
NOTE 6
H1
D D
A SECTION A−A
ALTERNATE CONSTRUCTION
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