MBRD660CTT4G
Schottky Rectifier, 60 V, 6 A, Dual Common Cathode, TO-252 (DPAK), 3 Pins, 900 mV
- Manufacturer: ONSEMI
- Product type: Schottky Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:60V; Forward Current If(AV):6A; Diode Configuration:Dual Common Cathode; Diode Case Style:TO-252; No. of Pins:3Pins; Forward Voltage VF Max:900mV; F
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: MBRD6
- Qualification: -
- Diode Mounting: Surface Mount
- Diode Case Style: TO-252 (DPAK)
- Diode Configuration: Dual Common Cathode
- Forward Voltage Max: 900mV
- Forward Surge Current: 75A
- Average Forward Current: 6A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 60V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.321 € |
| Current stock | 1000+ |
| Lead time | 30 days |
## MBRD620CT, NRVBD620VCT, SBRV620CT Series ## Switch-mode Power Rectifiers **www.onsemi.com** ## **DPAK−3 Surface Mount Package** These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. **SCHOTTKY BARRIER RECTIFIERS 6.0 AMPERES, 20 − 60 VOLTS** ## **Features** - Extremely Fast Switching - Extremely Low Forward Drop - Platinum Barrier with Avalanche Guardrings - NRVBD and SBRV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These Devices are Pb−Free and are RoHS Compliant ## **Mechanical Characteristics:** **DPAK CASE 369C** **==> picture [82 x 28] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>4<br>3 a<br>**----- End of picture text -----**<br> - Case: Epoxy, Molded - Weight: 0.4 Gram (Approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds - ESD Ratings: - ♦ Machine Model = C - ♦ Human Body Model = 3B **MARKING DIAGRAM** YWW B 6x0TG ~~4)~~ Y = Year WW = Work Week B6x0T = Device Code x = 2, 3, 4, 5, or 6 G = Pb−Free Package ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: **MBRD620CT/D** **1** © Semiconductor Components Industries, LLC, 2016 **April, 2017 − Rev. 14** **MBRD620CT, NRVBD620VCT, SBRV620CT Series** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||||||| |---|---|---|---|---|---|---|---| |**Rating**|**Symbol**|**MBRD/NRVBD/SBRV**|||||**Unit**| |||**620CT**|**630CT**|**640CT**|**650CT**|**660CT**|| |Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|20|30|40|50|60|V| |Average Rectified Forward Current<br>TC= 130°C (Rated VR)<br>Per Diode<br>Per Device|IF(AV)|3<br>6|||||A| |Peak Repetitive Forward Current,<br>TC= 130°C (Rated VR, Square Wave, 20 kHz)<br>Per Diode|IFRM|6|||||A| |Nonrepetitive Peak Surge Current − (Surge applied at rated load<br>conditions halfwave, single phase, 60 Hz)|IFSM|75|||||A| |Peak Repetitive Reverse Surge Current (2�s, 1 kHz)|IRRM|1|||||A| |Operating Junction Temperature (Note 1)|TJ|−65 to +175|||||°C| |Storage Temperature|Tstg|−65 to +175|||||°C| |Voltage Rate of Change (Rated VR)|dv/dt|10,000|||||V/�s| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R � JA. ## **THERMAL CHARACTERISTICS PER DIODE** |**THERMAL CHARACTERISTICS PER DIODE**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Maximum Thermal Resistance, Junction−to−Case|R�JC|6|°C/W| |Maximum Thermal Resistance, Junction−to−Ambient (Note 2)|R�JA|80|°C/W| 2. Rating applies when surface mounted on the minimum pad size recommended. ## **ELECTRICAL CHARACTERISTICS PER DIODE** |**ELECTRICAL CHARACTERISTICS PER DIODE**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Maximum Instantaneous Forward Voltage (Note 3)<br>iF= 3 Amps, TC= 25°C<br>iF= 3 Amps, TC= 125°C<br>iF= 6 Amps, TC= 25°C<br>iF= 6 Amps, TC= 125°C|VF|0.7<br>0.65<br>0.9<br>0.85|V| |Maximum Instantaneous Reverse Current (Note 3)<br>(Rated dc Voltage, TC= 25°C)<br>(Rated dc Voltage, TC= 125°C)|iR|0.1<br>15|mA| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. **www.onsemi.com** **2** **MBRD620CT, NRVBD620VCT, SBRV620CT Series** ## **TYPICAL CHARACTERISTICS** **==> picture [490 x 403] intentionally omitted <==** **----- Start of picture text -----**<br> 100 1000<br>70 100 TJ = 175°C<br>150°C<br>50 10<br>125°C<br>1.0<br>30 75°C<br>0.1<br>20<br>0.01<br>10 0.001 25°C<br>7.0 0.0001<br>0 10 20 30 40 50 60 70<br>5.0 VR, REVERSE VOLTAGE (VOLTS)<br>*The curves shown are typical for the highest voltage device in the<br>175°C voltage grouping. Typical reverse current for lower voltage selections<br>3.0<br>can be estimated from these curves if VR is sufficient below rated VR.<br>2.0 150°C Figure 2. Typical Reverse Current,* Per Leg<br>14<br>125°C<br>13 SINE<br>1.0 12 5 WAVE<br>11 10<br>0.7 10<br>9.0 IPK/IAV = 20<br>0.5 8.0<br>7.0<br>6.0 SQUARE<br>0.3 5.0 dc WAVE<br>0.2 75°C 4.0 °<br>3.0 TJ = 150 C<br>TC = 25°C 2.01.0<br>0.1 0<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10<br>vF, INSTANTANEOUS VOLTAGE (VOLTS) IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>, REVERSE CURRENT (mA)<br>IR<br>iF, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>PF(AV), AVERAGE POWER DISSIPATION (WATTS)<br>**----- End of picture text -----**<br> **Figure 1. Typical Forward Voltage, Per Leg** **Figure 3. Average Power Dissipation, Per Leg** **www.onsemi.com** **3** **MBRD620CT, NRVBD620VCT, SBRV620CT Series** ## **TYPICAL CHARACTERISTICS** **==> picture [241 x 398] intentionally omitted <==** **----- Start of picture text -----**<br> 8.0<br>RATED VOLTAGE APPLIED<br>7.0<br>R�JC = 6°C/W<br>6.0<br>TJ = 150°C<br>5.0<br>SINE<br>4.0 WAVE<br>OR dc<br>3.0 SQUARE<br>WAVE<br>2.0<br>1.0<br>0<br>80 90 100 110 120 130 140 150 160<br>TC, CASE TEMPERATURE (°C)<br>Figure 4. Current Derating, Case, Per Leg<br>4.0<br>TJ = 150°C R�JA = 80°C/W<br>3.5 SURFACE MOUNTED ON MIN.<br>PAD SIZE RECOMMENDED<br>3.0<br>dc<br>2.5 SQUARE WAVE<br>VR = 25 V OR<br>2.0<br>SINE WAVE<br>1.5<br>VR = 60 V<br>1.0<br>0.5<br>0<br>0 20 40 60 80 100 120 140 160<br>TA, AMBIENT TEMPERATURE (°C)<br>IF(AV) , AVERAGE FORWARD CURRENT (AMPS)<br>IF(AV) , AVERAGE FORWARD CURRENT (AMPS)<br>**----- End of picture text -----**<br> **Figure 5. Current Derating, Ambient, Per Leg** **==> picture [240 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 1 K<br>100 TJ = 25°C<br>10<br>0 10 20 30 40 50 60 70<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 6. Typical Capacitance, Per Leg** **www.onsemi.com** **4** **MBRD620CT, NRVBD620VCT, SBRV620CT Series** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Device**|**Package**|**Shipping**†| |MBRD620CTT4G|DPAK<br>(Pb−Free)|2500 / Tape & Reel| |MBRD630CTT4G||2500 / Tape & Reel| |MBRD640CTG||75 Units / Rail| |NRVBD640CTG*||75 Units / Rail| |NRVBD640CTG−VF01*||75 Units / Rail| |MBRD640CTT4G||2500 / Tape & Reel| |NRVBD640CTT4G*||2500 / Tape & Reel| |NRVBD640VCTT4G*||2500 / Tape & Reel| |SBRV640VCTT4G*||2500 / Tape & Reel| |MBRD650CTG||75 Units / Rail| |MBRD650CTT4G||2500 / Tape & Reel| |NRVBD650CTG−VF01*||2500 / Tape & Reel| |NRVBD650CTT4G*||2500 / Tape & Reel| |NRVBD650CTT4G−VF01*||2500 / Tape & Reel| |MBRD660CTG||75 Units / Rail| |NRVBD660CTG*||75 Units / Rail| |NRVBD660CTG−VF01*||75 Units / Rail| |MBRD660CTRLG||1800 / Tape & Reel| |NRVBD660CTRLG*||1800 / Tape & Reel| |MBRD660CTT4G||2500 / Tape & Reel| |NRVBD660CTT4G*||2500 / Tape & Reel| |SBRV660VCTT4G*||2500 / Tape & Reel| |SNRVBD660CTT4G*||2500 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NRVBD and SBRV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. **www.onsemi.com** **5** **MBRD620CT, NRVBD620VCT, SBRV620CT Series** ## **PACKAGE DIMENSIONS** **==> picture [104 x 29] intentionally omitted <==** **----- Start of picture text -----**<br> DPAK (SINGLE GAUGE)<br>CASE 369C<br>ISSUE F<br>**----- End of picture text -----**<br> **==> picture [481 x 417] intentionally omitted <==** **----- Start of picture text -----**<br> NOTES:<br>A 1. DIMENSIONING AND TOLERANCING PER ASME<br>Y14.5M, 1994.<br>E C 2. CONTROLLING DIMENSION: INCHES.<br>A 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-<br>b3 B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLDMENSIONS b3, L3 and Z.<br>FLASH, PROTRUSIONS, OR BURRS. MOLD<br>FLASH, PROTRUSIONS, OR GATE BURRS SHALL<br>4 NOT EXCEED 0.006 INCHES PER SIDE.<br>L3 bale Z 5. DIMENSIONS D AND E ARE DETERMINED AT THE<br>D DETAIL A H 6. DATUMS A AND B ARE DETERMINED AT DATUMOUTERMOST EXTREMES OF THE PLASTIC BODY.<br>1 2 3 PLANE H.<br>7. OPTIONAL MOLD FEATURE.<br>L4 NOTE 7 DIM MININCHESMAX MILLIMETERSMIN MAX<br>b2 c BOTTOM VIEW A 0.086 0.094 2.18 2.38<br>e SIDE VIEW A1 0.000 0.005 0.00 0.13<br>b b 0.025 0.035 0.63 0.89<br>TOP VIEW 0.005 (0.13) M C b2b3 0.0280.180 0.0450.215 0.724.57 1.145.46<br>c 0.018 0.024 0.46 0.61<br>c2 0.018 0.024 0.46 0.61<br>H Z Z D 0.235 0.245 5.97 6.22<br>E 0.250 0.265 6.35 6.73<br>e 0.090 BSC 2.29 BSC<br>L2 [GAUGE] PLANE C SEATINGPLANE H 0.370 0.410 9.40 10.41<br>L 0.055 0.070 1.40 1.78<br>L1 0.114 REF 2.90 REF<br>L2 0.020 BSC 0.51 BSC<br>L L3 0.035 0.050 0.89 1.27<br>A1 BOTTOM VIEW L4 −−− 0.040 −−− 1.01<br>wet L1 s So CONSTRUCTIONS h ALTERNATE Gh Z 0.155 −−− 3.93 −−−<br>DETAIL A<br>ROTATED 9 CW SOLDERING FOOTPRINT*<br>6.20 3.00<br>0.244 0.118<br>2.58<br>0.102<br>5.80<br>1.60 6.17<br>0.228<br>0.063 0.243<br>Te<br>SCALE 3:1 mm<br>inches<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br> ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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Updated at June 4, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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