# Schottky Rectifier, 100 V, 40 A, Dual Common Cathode, TO-263 (D2PAK), 3 Pins, 800 mV ![Product image](https://novapart.co/image/farnell:1431026RL/) **URL**: https://novapart.co/products/MBRB41H100CTT4G/schottky-rectifier-100-v-40-a-dual-common-cathode **SKU**: MBRB41H100CTT4G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes **Price**: €1.0300 **Stock**: 10+ **Lead Time**: 229 days (indicative) ## Specifications | Parameter | Value | |---|---| | Diode Mounting | Surface Mount | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:1431026RL/) ## MBR41H100CT, NRVBB41H100CT Series ## Switch-mode Power Rectifier 100 V, 40 A ## **Features and Benefits** - Low Forward Voltage: 0.67 V @ 125°C - Low Power Loss/High Efficiency - High Surge Capacity - 175°C Operating Junction Temperature - 40 A Total (20 A Per Diode Leg) - Guard−Ring for Stress Protection - NRVBB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant - MBR41H100CTH and MBRB41H100CT−1H are Halide−Free ## **Applications** - Power Supply − Output Rectification - Power Management - Instrumentation ## **Mechanical Characteristics:** - Case: Epoxy, Molded - Epoxy Meets UL 94 V−0 @ 0.125 in - Weight (Approximately): 1.9 Grams (TO−220) - 1.7 Grams (D[2] PAK) - 1.5 Grams (TO−262) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds **www.onsemi.com** 1 2, 4 3 4 **MARKING** ~~y~~ **DIAGRAMS TO−220 CASE 221A** AYWW **STYLE 6** B41H100x AKA 1 2 3 4 **D[2] PAK 3** AYWW **CASE 418B** B41H100G **STYLE 3** AKA 1 3 an ~~n~~ 4 **I[2] PAK (TO−262)** AYWW **CASE 418D** B41H100x **STYLE 3** AKA 8 1 | 2 3 A = Assembly Location Y = Year WW = Work Week x = G or H G = Pb−Free Package H = Halide−Free Package AKA = Polarity Designator ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Publication Order Number: **MBR41H100CT/D** **1** © Semiconductor Components Industries, LLC, 2015 **January, 2015 − Rev. 9** ## **MBR41H100CT, NRVBB41H100CT Series** ## **MAXIMUM RATINGS** (Per Diode Leg) |**MAXIMUM RATINGS**(Per Diode Leg)|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage|VRRM
VRWM
VR|100|V| |Average Rectified Forward Current
(Rated VR) TC= 150°C|IF(AV)|20|A| |Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC= 145°C|IFRM|40|A| |Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)|IFSM|350|A| |Operating Junction Temperature (Note 1)|TJ|+175|°C| |Storage Temperature|Tstg|�65 to +175|°C| |Voltage Rate of Change (Rated VR)|dv/dt|10,000|V/�s| |Controlled Avalanche Energy (see test conditions in Figures 10 and 11)|WAVAL|400|mJ| |ESD Ratings:
Machine Model = C
Human Body Model = 3B||> 400
> 8000|V| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R � JA. ## **THERMAL CHARACTERISTICS** (Per Diode Leg) |**THERMAL CHARACTERISTICS**(Per Diode Leg)|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Maximum Thermal Resistance
Junction−to−Case
Junction−to−Ambient|R�JC
R�JA|2.0
70|°C/W| ## **ELECTRICAL CHARACTERISTICS** (Per Diode Leg) |**ELECTRICAL CHARACTERISTICS**(Per Diode Leg)|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Maximum Instantaneous Forward Voltage (Note 2)
(IF= 20 A, TC= 25°C)
(IF= 20 A, TC= 125°C)
(IF= 40 A, TC= 25°C)
(IF= 40 A, TC= 125°C)|vF|0.80
0.67
0.90
0.76|V| |Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC= 125°C)
(Rated DC Voltage, TC= 25°C)|iR|10
0.01|mA| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. **www.onsemi.com** **2** **MBR41H100CT, NRVBB41H100CT Series** **==> picture [493 x 650] intentionally omitted <==** **----- Start of picture text -----**
1000 1000
100 100 TJ = 150 ° C
TJ = 150 ° C TJ = 125 ° C
10 TJ = 125 ° C 10
TJ = 25 ° C TJ = 25 ° C
1 1
0.1 0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.2 0.4 0.6 0.8 1.0 1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
1.0E−01 1.0E−01
TJ = 150 ° C
1.0E−02 TJ = 150 ° C 1.0E−02
1.0E−03 1.0E−03 TJ = 125 ° C
TJ = 125 ° C
1.0E−04 1.0E−04
1.0E−05 1.0E−05
TJ = 25 ° C
1.0E−06 TJ = 25 ° C 1.0E−06
1.0E−07 1.0E−07
1.0E−08 1.0E−08
0 20 40 60 80 100 0 20 40 60 80 100
VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
35 50
45
30
dc
40
25 35
SQUARE
30
20 SQUARE WAVE
25
DC
15
20
10 15
10
5
5
0 0
100 110 120 130 140 150 160 170 180 0 5 10 15 20 25 30 35 40 45 50
TC, CASE TEMPERATURE ( ° C) IO, AVERAGE FORWARD CURRENT (AMPS)
, INSTANTANEOUS FORWARD CURRENT (AMPS)IF , INSTANTANEOUS FORWARD CURRENT (AMPS)IF
, REVERSE CURRENT (AMPS)
IR
, MAXIMUM REVERSE CURRENT (AMPS)
IR
(WATTS)
, AVERAGE POWER DISSIPATION
FO
P
, AVERAGE FORWARD CURRENT (AMPS)
IF
**----- End of picture text -----**
**Figure 5. Current Derating** **Figure 6. Forward Power Dissipation** **www.onsemi.com** **3** **MBR41H100CT, NRVBB41H100CT Series** **==> picture [490 x 619] intentionally omitted <==** **----- Start of picture text -----**
10000
TJ = 25 ° C
1000
100
10
0 20 40 60 80 100
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
100
D = 0.5
0.2
10 0.1
0.05
1
0.01
0.1
P(pk)
t1
0.01 SINGLE PULSE t2
DUTY CYCLE, D = t1/t2
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
Figure 8. Thermal Response Junction−to−Ambient
10
D = 0.5
1
0.2
0.1
0.05
0.1
0.01
P(pk)
0.01 t 1
SINGLE PULSE
t2
DUTY CYCLE, D = t 1 /t 2
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
C, CAPACITANCE (pF)
R(t), TRANSIENT THERMAL RESISTANCE
R(t), TRANSIENT THERMAL RESISTANCE
**----- End of picture text -----**
**Figure 9. Thermal Response Junction−to−Case** **www.onsemi.com** **4** **MBR41H100CT, NRVBB41H100CT Series** **==> picture [218 x 169] intentionally omitted <==** **----- Start of picture text -----**
+VDD
IL 10 mH COIL
VD
MERCURY ID
SWITCH
DUT
S1
**----- End of picture text -----**
**Figure 10. Test Circuit** The unclamped inductive switching circuit shown in Figure 10 was used to demonstrate the controlled avalanche capability of this device. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive **==> picture [217 x 169] intentionally omitted <==** **----- Start of picture text -----**
BVDUT
IL ID
VDD
t0 t1 t2 t
**----- End of picture text -----**
**Figure 11. Current−Voltage Waveforms** elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). ## **EQUATION (1):** **==> picture [144 x 30] intentionally omitted <==** ## **EQUATION (2):** **==> picture [79 x 19] intentionally omitted <==** **www.onsemi.com** **5** **MBR41H100CT, NRVBB41H100CT Series** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Device**|**Package**|**Shipping**†| |MBR41H100CTG|TO−220
(Pb−Free)|50 Units / Rail| |MBR41H100CTH|TO−220
(Halide−Free)|50 Units / Rail| |MBRB41H100CT−1G|I2PAK
(Pb−Free)|50 Units / Rail| |MBRB41H100CT−1H
(In Development)|I2PAK
(Halide−Free)|50 Units / Rail| |MBRB41H100CTT4G|D2PAK 3
(Pb−Free)|800 Units / Tape & Reel| |NRVBB41H100CTT4G*|D2PAK 3
(Pb−Free)|800 Units / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NRVBB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. **www.onsemi.com** **6** **MBR41H100CT, NRVBB41H100CT Series** ## **PACKAGE DIMENSIONS** **TO−220** CASE 221A−09 ISSUE AH NOTES: **==> picture [234 x 185] intentionally omitted <==** **----- Start of picture text -----**
SEATING
−T− PLANE
B F C
T S
4
Q A
1 2 3 U
H
K
Z
L R
V J
G
D
N
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1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. |**DIM**|**INCHES**|**INCHES**|**MILLIMETERS**|**MILLIMETERS**| |---|---|---|---|---| ||**MIN**
|**MAX**
|**MIN**
|**MAX**
| |**A**|0.570|0.620|14.48|15.75| |**B**|0380|0415|966|1053| |**C**|.
0.160|.
0.190|.
4.07|.
4.83| |**D**|0.025|0.038|0.64|0.96| |**F**|0.142|0.161|3.61|4.09| |**G**|0.095|0.105|2.42|2.66| |**H**|0.110|0.161|2.80|4.10| |**J**|0.014|0.024|0.36|0.61| |**K**|0.500|0.562|12.70|14.27| |**L**|0.045|0.060|1.15|1.52| |**N**|0.190|0.210|4.83|5.33| |**Q**|0100|0120|254|304| |**R**|.
0.080|.
0.110|.
2.04|.
2.79| |**S**|0.045|0.055|1.15|1.39| |**T**|0.235|0.255|5.97|6.47| |**U**|0.000|0.050|0.00|1.27| |**V**|0.045|---|1.15|---| |**Z**|---|0.080|---|2.04| |STYLE
PIN|6:
1.
ANODE
2.
CATHODE
3.
ANODE
4.
CATHODE|||| **www.onsemi.com** **7** **MBR41H100CT, NRVBB41H100CT Series** ## **PACKAGE DIMENSIONS** **D[2] PAK 3** CASE 418B−04 ISSUE K **==> picture [459 x 555] intentionally omitted <==** **----- Start of picture text -----**
NOTES:
C 1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
E 2. CONTROLLING DIMENSION: INCH.
−B− V 3. 418B−01 THRU 418B−03 OBSOLETE,NEW STANDARD 418B−04.
W
4 INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.340 0.380 8.64 9.65
B 0.380 0.405 9.65 10.29
A C 0.160 0.190 4.06 4.83
S D 0.020 0.035 0.51 0.89
1 2 3 E 0.045 0.055 1.14 1.40
F 0.310 0.350 7.87 8.89
G 0.100 BSC 2.54 BSC
−T− H 0.080 0.110 2.03 2.79
K J 0.018 0.025 0.46 0.64
SEATINGPLANE G J W KL 0.0520.090 0.0720.110 1.322.29 1.832.79
M 0.280 0.320 7.11 8.13
H N 0.197 REF 5.00 REF
D 3 PL P 0.079 REF 2.00 REF
R 0.039 REF 0.99 REF
0.13 (0.005) M T B M S 0.575 0.625 14.60 15.88
V 0.045 0.055 1.14 1.40
VARIABLE STYLE 3:
CONFIGURATION PIN 1. ANODE
ZONE N P 2. CATHODE
R 3. ANODE
U 4. CATHODE
L L L
M M M
F F F
VIEW W−W VIEW W−W VIEW W−W
1 2 3
SOLDERING FOOTPRINT*
10.49
8.38
16.155
2X
3.504
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
**----- End of picture text -----**
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **www.onsemi.com** **8** **MBR41H100CT, NRVBB41H100CT Series** ## **PACKAGE DIMENSIONS** **I[2] PAK (TO−262)** CASE 418D ISSUE D **==> picture [404 x 214] intentionally omitted <==** **----- Start of picture text -----**
C
E
−B− V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
4 Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
A DIM MIN MAX MIN MAX
W A 0.335 0.380 8.51 9.65
; 1 2 3 ee ==== B 0.380 0.406 9.65 10.31
C 0.160 0.185 4.06 4.70
D 0.026 0.035 0.66 0.89
F E 0.045 0.055 1.14 1.40
F 0.122 REF 3.10 REF
−T− G 0.100 BSC 2.54 BSC
SEATING H 0.094 0.110 2.39 2.79
PLANE K J 0.013 0.025 0.33 0.64
S K 0.500 0.562 12.70 14.27
S 0.390 REF 9.90 REF
V 0.045 0.070 1.14 1.78
W 0.522 0.551 13.25 14.00
L :====
G ; J STYLE 3:PIN 1. ANODE
D 3 PL H 2. CATHODE
3. ANODE
0.13 (0.005) M T B M 4. CATHODE
**----- End of picture text -----**
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