# Schottky Rectifier, 100 V, 20 A, Dual Common Cathode, TO-263 (D2PAK), 3 Pins, 880 mV

![Product image](https://novapart.co/image/farnell:2317409RL/)

**URL**: https://novapart.co/products/MBRB20H100CTT4G/schottky-rectifier-100-v-20-a-dual-common-cathode
**SKU**: MBRB20H100CTT4G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes
**Price**: €0.8960
**Stock**: 200+
**Lead Time**: 83 days (indicative)

## Description

Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):20A; Diode Configuration:Dual Common Cathode; Diode Case Style:TO-263; No. of Pins:3Pins; Forward Voltage VF Max:880m

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | MBRB2 |
| Qualification | - |
| Diode Mounting | Surface Mount |
| Diode Case Style | TO-263 (D2PAK) |
| Diode Configuration | Dual Common Cathode |
| Forward Voltage Max | 880mV |
| Forward Surge Current | 250A |
| Average Forward Current | 20A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 100V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2317409RL/)

## MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G 

## Switch-mode Power Rectifier 100 V, 20 A 

## **Features and Benefits** 

**www.onsemi.com SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 100 VOLTS** 

- Low Forward Voltage: 0.64 V @ 125°C 

- Low Power Loss/High Efficiency 

- High Surge Capacity 

- 175°C Operating Junction Temperature 

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1<br>2, 4<br>3 ae;<br>**----- End of picture text -----**<br>


- 20 A Total (10 A Per Diode Leg) 

- Guard−Ring for Stress Protection 

- NRVBB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free and are RoHS Compliant 

## **Applications** 

- Power Supply − Output Rectification 

- Power Management 

- Instrumentation 

## **Mechanical Characteristics:** 

- Case: Epoxy, Molded 

- Epoxy Meets UL 94 V−0 @ 0.125 in 

- Weight (Approximately): 

   - 1.9 Grams (TO−220) 

   - 1.7 Grams (D[2] PAK) 

- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

- Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 

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**----- Start of picture text -----**<br>
4<br>1 ro6U 2 1 2<br>3 3<br>TO−220 TO−220 FULLPAK<br>CASE 221A CASE 221D<br>STYLE 6 STYLE 3<br>4<br>1<br>2<br>><br>3<br>D [2] PAK 3<br>CASE 418B<br>STYLE 3<br>**----- End of picture text -----**<br>


## **DEVICE MARKING INFORMATION** 

See general marking information in the device marking section on page 2 of this data sheet. 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. 

Publication Order Number: **MBR20H100CT/D** 

**1** 

© Semiconductor Components Industries, LLC, 2015 **January, 2015 − Rev. 12** 

**MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G** 

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**----- Start of picture text -----**<br>
AYWW<br>AYWW B20H100G<br>AYWW B20H100G AKA<br>B20H100G AKA<br>AKA<br>TO−220 TO−220 FULLPAK D [2] PAK 3<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>B20H100 = Device Code<br>G = Pb−Free Device<br>AKA = Polarity Designator<br>**----- End of picture text -----**<br>


**Figure 1. Marking Diagrams** 

## **MAXIMUM RATINGS** (Per Diode Leg) 

|**MAXIMUM RATINGS**(Per Diode Leg)||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage‘|VRRM<br>VRWM<br>VR|100|V|
|Average Rectified Forward Current<br>(Rated VR) TC= 162°C|IF(AV)|10|A|
|Peak Repetitive Forward Current<br>(Rated VR, Square Wave, 20 kHz) TC= 160°C|IFRM|20|A|
|Nonrepetitive Peak Surge Current<br>(Surge applied at rated load conditions halfwave, single phase, 60 Hz)|IFSM|250|A|
|Operating Junction Temperature (Note 1)|TJ|+175|°C|
|Storage Temperature|Tstg|�65 to +175|°C|
|Voltage Rate of Change (Rated VR)|dv/dt|10,000|V/�s|
|Controlled Avalanche Energy (see test conditions in Figures 11 and 12)|WAVAL|200|mJ|
|ESD Ratings:<br>Machine Model = C<br>Human Body Model = 3B||> 400<br>> 8000|V|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R � JA. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Maximum Thermal Resistance<br>(MBR20H100CTG, MBRB20H100CTG and NRVBB20H100CTT4G)<br>Junction−to−Case<br>Junction−to−Ambient<br>(MBRF20H100CTG)<br>Junction−to−Case|R�JC<br>R�JA<br>R�JC|2.0<br>60<br>2.5|°C/W|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

**www.onsemi.com** 

**2** 

**MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G** 

## **ELECTRICAL CHARACTERISTICS** (Per Diode Leg) 

|**ELECTRICAL CHARACTERISTICS**(Per Diode Leg)||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Maximum Instantaneous Forward Voltage (Note 2)<br>(IF= 10 A, TC= 25°C)<br>(IF= 10 A, TC= 125°C)<br>(IF= 20 A, TC= 25°C)<br>(IF= 20 A, TC= 125°C)|vF|0.77<br>0.64<br>0.88<br>0.73|V|
|Maximum Instantaneous Reverse Current (Note 2)<br>(Rated DC Voltage, TC= 125°C)<br>(Rated DC Voltage, TC= 25°C)|iR|6.0<br>0.0045|mA|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Device Order Number**|**Package**|**Shipping**†|
|MBR20H100CTG|TO−220<br>(Pb−Free)|50 Units / Rail|
|MBRF20H100CTG|TO−220FP<br>(Pb−Free)|50 Units / Rail|
|MBRB20H100CTT4G|D2PAK 3<br>(Pb−Free)|800 / Tape & Reel|
|NRVBB20H100CTT4G*|D2PAK 3<br>(Pb−Free)|800 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

*NRVBB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. 

**www.onsemi.com** 

**3** 

**MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G** 

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100 100<br>TJ = 150 ° C TJ = 150 ° C<br>10 10<br>TJ = 125 ° C TJ = 125 ° C<br>°<br>1 TJ = 25 C 1 TJ = 25 ° C<br>0.1 0.1<br>0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.2 0.4 0.6 0.8 1.0 1.2<br>, INSTANTANEOUS FORWARD CURRENT (AMPS)IF VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) , INSTANTANEOUS FORWARD CURRENT (AMPS)IF VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


**Figure 1. Typical Forward Voltage** 

**Figure 2. Maximum Forward Voltage** 

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**----- Start of picture text -----**<br>
1.0E−01 1.0E−01<br>TJ = 150 ° C<br>1.0E−02 1.0E−02<br>TJ = 150 ° C<br>1.0E−03 1.0E−03 TJ = 125 ° C<br>TJ = 125 ° C<br>1.0E−04 1.0E−04<br>1.0E−05 1.0E−05<br>TJ = 25 ° C<br>1.0E−06 TJ = 25 ° C 1.0E−06<br>1.0E−07 1.0E−07<br>1.0E−08 1.0E−08<br>0 20 40 60 80 100 0 20 40 60 80 100<br>VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current<br>20 16<br>dc 14<br>15 12<br>SQUARE DC<br>SQUARE WAVE 10<br>10 8<br>6<br>5 4<br>2<br>0 0<br>100 110 120 130 140 150 160 170 180 0 5 10 15 20 25<br>TC, CASE TEMPERATURE ( ° C) IO, AVERAGE FORWARD CURRENT (AMPS)<br>, REVERSE CURRENT (AMPS)<br>IR<br>, MAXIMUM REVERSE CURRENT (AMPS)<br>IR<br>(WATTS)<br>, AVERAGE POWER DISSIPATION<br>FO<br>P<br>, AVERAGE FORWARD CURRENT (AMPS)<br>IF<br>**----- End of picture text -----**<br>


**Figure 5. Current Derating** 

**Figure 6. Forward Power Dissipation** 

**www.onsemi.com** 

**4** 

**MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G** 

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10000<br>TJ = 25 ° C<br>1000<br>100<br>10<br>0 20 40 60 80 100<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 7. Capacitance** 

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100<br>D = 0.5<br>10<br>0.2<br>0.1<br>0.05<br>1<br>0.01 P(pk)<br>0.1 t 1<br>t2<br>SINGLE PULSE DUTY CYCLE, D = t 1 /t 2<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, TIME (sec)<br>Figure 8. Thermal Response Junction−to−Ambient for MBR20H100CT, MBRB20H100CT<br>and NRVBB20H100CTT4G<br>10<br>D = 0.5<br>1<br>0.2<br>0.1<br>0.05<br>P(pk)<br>0.1<br>0.01 t1<br>t 2<br>SINGLE PULSE DUTY CYCLE, D = t1/t2<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, TIME (sec)<br>R(t), TRANSIENT THERMAL RESISTANCE<br>R(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


**Figure 9. Thermal Response Junction−to−Case for MBR20H100CT, MBRB20H100CT and  NRVBB20H100CTT4G** 

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**5** 

**MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G** 

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**----- Start of picture text -----**<br>
10<br>D = 0.5<br>1<br>0.2<br>0.1<br>0.05<br>0.1<br>0.01<br>P(pk)<br>0.01 t 1<br>SINGLE PULSE t2<br>DUTY CYCLE, D = t 1 /t 2<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, TIME (sec)<br>R(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


**Figure 10. Thermal Response Junction−to−Case for MBRF20H100CT** 

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+VDD<br>IL 10 mH COIL<br>VD<br>MERCURY ID<br>SWITCH<br>DUT<br>S1<br>**----- End of picture text -----**<br>


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BVDUT<br>IL ID<br>VDD<br>t0 t1 t2 t<br>**----- End of picture text -----**<br>


**Figure 11. Test Circuit** 

**Figure 12. Current−Voltage Waveforms** 

The unclamped inductive switching circuit shown in Figure 11 was used to demonstrate the controlled avalanche capability of this device. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. 

When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. 

By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive 

elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). 

## **EQUATION (1):** 

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## **EQUATION (2):** 

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**6** 

**MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G** 

## **PACKAGE DIMENSIONS** 

**D[2] PAK 3** CASE 418B−04 ISSUE K 

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**----- Start of picture text -----**<br>
C<br>E<br>V<br>−B−<br>W<br>4<br>A<br>S<br>1 2 3<br>−T−<br>K<br>SEATING W<br>PLANE G J<br>H<br>D 3 PL<br>0.13 (0.005) M T B M<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
VARIABLE<br>CONFIGURATION<br>ZONE N P<br>R<br>U<br>L L L<br>M M M<br>F F F<br>VIEW W−W VIEW W−W VIEW W−W<br>1 2 3<br>**----- End of picture text -----**<br>


- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 

2. CONTROLLING DIMENSION: INCH. 

|1. <br>2.|DIMENSIONING AND TOLERANCING<br>PER ANSI Y14.5M, 1982.<br> CONTROLLING DIMENSION: INCH.|DIMENSIONING AND TOLERANCING<br>PER ANSI Y14.5M, 1982.<br> CONTROLLING DIMENSION: INCH.|DIMENSIONING AND TOLERANCING<br>PER ANSI Y14.5M, 1982.<br> CONTROLLING DIMENSION: INCH.|DIMENSIONING AND TOLERANCING<br>PER ANSI Y14.5M, 1982.<br> CONTROLLING DIMENSION: INCH.|DIMENSIONING AND TOLERANCING<br>PER ANSI Y14.5M, 1982.<br> CONTROLLING DIMENSION: INCH.|
|---|---|---|---|---|---|
|3.|418B−01 THRU 418B−03 OBSOLETE,<br>NEW STANDARD 418B−04.|||||
||**DIM**|**INCHES**||**MILLIMETERS**||
|||**MIN**|**MAX**|**MIN**|**MAX**|
||**A**|0.340|0.380|8.64|9.65|
||**B**|0.380|0.405|9.65|10.29|
||**C**|0.160|0.190|4.06|4.83|
||**D**|0.020|0.035|0.51|0.89|
||**E**|0.045|0.055|1.14|1.40|
||**F**|0.310|0.350|7.87|8.89|
||**G**<br>|0.100 BSC<br><br>||2.54 BSC<br><br>||
||**H**|0.080|0.110|2.03|2.79|
||**J**|0.018|0.025|0.46|0.64|
||**K**|0.090|0.110|2.29|2.79|
||**L**|0.052|0.072|1.32|1.83|
||**M**|0.280|0.320|7.11|8.13|
||**N**|0.197 REF||5.00 REF||
||**P**|0.079 REF||2.00 REF||
||**R**|0.039 REF||0.99 REF||
||**S**|0.575|0.625|14.60|15.88|
||**V**|0.045|0.055|1.14|1.40|
||STYLE 3:<br>PIN 1. ANODE<br>2CATHODE|||||



3. ANODE 4. CATHODE 

## **SOLDERING FOOTPRINT*** 

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10.49<br>8.38<br>16.155<br>2X<br>3.504<br>2X<br>1.016<br>5.080<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

**www.onsemi.com** 

**7** 

**MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G** 

## **PACKAGE DIMENSIONS** 

**TO−220** CASE 221A−09 ISSUE AH 

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**----- Start of picture text -----**<br>
SEATING<br>−T− PLANE<br>B F C<br>T S<br>4<br>Q A<br>1 2 3 U<br>H<br>K<br>Z<br>L R<br>V J<br>G<br>D<br>N<br>**----- End of picture text -----**<br>


- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 

2. CONTROLLING DIMENSION: INCH. 

3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. 

|**DIM**|**INCHES**|**INCHES**|**MILLIMETERS**|**MILLIMETERS**|
|---|---|---|---|---|
||**MIN**<br>|**MAX**<br>|**MIN**<br>|**MAX**<br>|
|**A**|0.570|0.620|14.48|15.75|
|**B**|0380|0415|966|1053|
|**C**|.<br>0.160|.<br>0.190|.<br>4.07|.<br>4.83|
|**D**|0.025|0.038|0.64|0.96|
|**F**|0.142|0.161|3.61|4.09|
|**G**|0.095|0.105|2.42|2.66|
|**H**|0.110|0.161|2.80|4.10|
|**J**|0.014|0.024|0.36|0.61|
|**K**|0.500|0.562|12.70|14.27|
|**L**|0.045|0.060|1.15|1.52|
|**N**|0.190|0.210|4.83|5.33|
|**Q**|0100|0120|254|304|
|**R**|.<br>0.080|.<br>0.110|.<br>2.04|.<br>2.79|
|**S**|0.045|0.055|1.15|1.39|
|**T**|0.235|0.255|5.97|6.47|
|**U**|0.000|0.050|0.00|1.27|
|**V**|0.045|---|1.15|---|
|**Z**|---|0.080|---|2.04|
|STYLE<br>PIN|6:<br>1.<br>ANODE<br>2.<br>CATHODE<br>3.<br>ANODE<br>4.<br>CATHODE||||



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**MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G** 

## **PACKAGE DIMENSIONS** 

**TO−220 FULLPAK** CASE 221D−03 ISSUE K 

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**----- Start of picture text -----**<br>
−T− SEATING<br>PLANE<br>−B− C<br>F<br>S<br>Q<br>U<br>A<br>1 2 3<br>H<br>−Y−<br>K<br>ae<br>G J<br>N s R<br>L<br>D 3 PL<br>0.25 (0.010) M B M Y<br>**----- End of picture text -----**<br>


- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 

**==> picture [107 x 19] intentionally omitted <==**

**----- Start of picture text -----**<br>
2. CONTROLLING DIMENSION: INCH<br>3. 221D-01 THRU 221D-02 OBSOLETE, NEW<br>STANDARD 221D-03.<br>**----- End of picture text -----**<br>


|**DIM**|**INCHES**|**INCHES**|**MILLIMETERS**|**MILLIMETERS**|
|---|---|---|---|---|
||**MIN**|**MAX**|**MIN**|**MAX**|
|**A**|0.617|0.635|15.67|16.12|
|**B**|0.392|0.419|9.96|10.63|
|**C**<br>**D**|0.177<br>0.024|0.193<br>0.039|4.50<br>0.60|4.90<br>1.00|
|**D**<br>===|0.024<br>===|0.039<br>===|0.60<br>===|1.00<br>===|
|**F**<br>===|0.116<br>===|0.129<br>===|2.95<br>===|3.28<br>===|
|**G**<br>===|0.100 BSC<br>===||2.54 BSC<br>===||
|**H**<br>===|0.118<br>===|0.135<br>===|3.00<br>===|3.43<br>===|
|**J**<br>===|0.018<br>===|0.025<br>===|0.45<br>===|0.63<br>===|
|**K**<br>===|0.503<br>===|0.541<br>===|12.78<br>===|13.73<br>===|
|**L**|0.048|0.058|1.23|1.47|
|**N**<br>**Q**|0.200 BSC<br>0.122<br>0.138||5.08 BSC<br>3.10<br>3.50||
|**Q**<br>**R**|0.122<br>0.099|0.138<br>0.117|3.10<br>2.51|3.50<br>2.96|
|**S**|0.092|0.113|2.34|2.87|
|**U**|0.239|0.271|6.06|6.88|



FULLPAK is a trademark of Semiconductor Components Industries, LLC. 

ON Semiconductor and the         are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf.  SCILLC reserves the right to make changes without further notice to any products herein.  SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.  All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.  SCILLC does not convey any license under its patent rights nor the rights of others.  SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.  Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.  SCILLC is an Equal Opportunity/Affirmative Action Employer.  This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

## **LITERATURE FULFILLMENT** : 

Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Email** : orderlit@onsemi.com 

**N. American Technical Support** : 800−282−9855 Toll Free 

**ON Semiconductor Website** : **www.onsemi.com** 

USA/Canada 

**Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit Phone: 421 33 790 2910 **Japan Customer Focus Center** For additional information, please contact your local Phone: 81−3−5817−1050 Sales Representative 

**www.onsemi.com** 

**MBR20H100CT/D** 

**9** 



## Links

- [View this product on Novapart](https://novapart.co/products/MBRB20H100CTT4G/schottky-rectifier-100-v-20-a-dual-common-cathode)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/on-semiconductor/mbrb20h100ctt4g/diode-schottky-20a-100v-to-263/dp/2317409RL)
---

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