# Schottky Rectifier, 45 V, 16 A, Single, TO-263 (D2PAK), 3 Pins, 630 mV

![Product image](https://novapart.co/image/farnell:2463426/)

**URL**: https://novapart.co/products/MBRB1645T4G/schottky-rectifier-45-v-16-a-single-to-263-d2pak-3
**SKU**: MBRB1645T4G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes
**Price**: €0.7090
**Stock**: 10+

## Description

Repetitive Reverse Voltage Vrrm Max:45V; Forward Current If(AV):16A; Diode Configuration:Single; Diode Case Style:TO-263; No. of Pins:3Pins; Forward Voltage VF Max:630mV; Forward Surge Curren

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (10-Jun-2022) |
| No. Of Pins | 3Pins |
| Product Range | MBRB1 |
| Qualification | - |
| Diode Mounting | Surface Mount |
| Diode Case Style | TO-263 (D2PAK) |
| Diode Configuration | Single |
| Forward Voltage Max | 630mV |
| Forward Surge Current | 150A |
| Average Forward Current | 16A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 45V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2463426/)

## MBR1635, MBR1645, MBRB1645, NRVBB1645 

## Switch Mode Power Rectifiers **16 A, 35 and 45 V** 

These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. 

**http://onsemi.com** 

## **Features** 

**==> picture [177 x 196] intentionally omitted <==**

**----- Start of picture text -----**<br>
MARKING<br>4 DIAGRAMS<br>TO−220AC<br>y CASE 221B o<br>PLASTIC AYWWG<br>B16x5<br>KA<br>1<br>. 3 1, 4<br>3<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>B16x5 = Device Code<br>x = 3 or 4<br>KA = Diode Polarity<br>G = Pb−Free Package<br>**----- End of picture text -----**<br>


- Guard−ring for Stress Protection 

- Low Forward Voltage 

- 175°C Operating Junction Temperature 

- NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free and are RoHS Compliant 

## **Mechanical Characteristics:** 

- Case: Epoxy, Molded 

- Weight: 1.9 Grams for TO−220 

   - 1.7 Grams for D[2] PAK 

- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

- Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 

## **MAXIMUM RATINGS** 

**==> picture [480 x 258] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||||||||
|---|---|---|---|---|---|---|---|---|
|Rating|Symbol|Value|Unit|4|CASE 418BD|[2]|PAK|B1645GAYWW|
|Peak Repetitive Reverse Voltage|VRRM|V|STYLE 3|
|Working Peak Reverse Voltage|VRWM|1|
|DC Blocking Voltage|MBR1635|VR|35|3|1|
|MBR1645|45|4|
|MBRB1645|45|3|
|tf]|@|..|2|
|Se|Average Rectified Forward Current Delay(Rated VR, TC = 163|°|C) Total Device|IF(AV)|16|A|B1645A|= Device Code= Assembly Location|
|Peak Repetitive Forward Current, Per|IFRM|32|A|Y|= Year|
|Leg|WW|= Work Week|
|(Rated VR, Square Wave,|G|= Pb−Free Package|
|20 kHz, TC = 157|°|C) Total Device|
|SL|
|ORDERING INFORMATION|
|Non−Repetitive Peak Surge Current|IFSM|150|A|
|(Surge Applied at Rated Load Conditions|Device|Package|Shipping|
|Halfwave, Single Phase, 60 Hz)|
|PT|
|MBR1635G|TO−220|50 Units / Rail|
|Peak Repetitive Reverse Surge Current|IRRM|1.0|A|
|(Pb−Free)|
|(2.0 s, 1.0 kHz)|
|Storage Temperature Range|Tstg|−65 to +175|°|C|MBR1645G|TO−220|50 Units / Rail|
|(Pb−Free)|
|Operating Junction Temperature (Note 1)|TJ|−65 to +175|°|C|
|MBRB1645T4G|D|[[2]]|PAK|800 Units / Rail|
|Voltage Rate of Change (Rated VR)|dv/dt|10,000|V/|s|

**----- End of picture text -----**<br>


**==> picture [178 x 116] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||||
|---|---|---|---|---|
|Device|Package|Shipping|
|MBR1635G|TO−220|50 Units / Rail|
|(Pb−Free)|
|MBR1645G|TO−220|50 Units / Rail|
|(Pb−Free)|
|MBRB1645T4G|D|[[2]]|PAK|800 Units / Rail|
|(Pb−Free)|
|NRVBB1645T4G|D|[2]|PAK|800 Units / Rail|
|(Pb−Free)|

**----- End of picture text -----**<br>


Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R JA. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2014 **April, 2014 − Rev. 12** 

**MBR1635/D** 

**MBR1635, MBR1645, MBRB1645, NRVBB1645** 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Maximum Thermal Resistance,<br>Junction−to−Case|R�JC|1.5|°C/W|
|**ELECTRICAL CHARACTERISTICS**||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Maximum Instantaneous Forward Voltage (Note 2)<br>(iF= 16 Amps, TC= 125°C)<br>(iF= 16 Amps, TC= 25°C)|vF|0.57<br>0.63|V|
|Maximum Instantaneous Reverse Current (Note 2)<br>(Rated dc Voltage, TC= 125°C)<br>(Rated dc Voltage, TC= 25°C)|iR|40<br>0.2|mA|



2. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. 

**http://onsemi.com** 

**2** 

**MBR1635, MBR1645, MBRB1645, NRVBB1645** 

**==> picture [489 x 186] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>1.0E−01<br>70 TJ = 150 ° C<br>50<br>1.0E−02<br>30 TJ = 125 ° C 125 ° C<br>20 100 ° C 1.0E−03<br>25 ° C<br>10 1.0E−04<br>7.0<br>5.0 1.0E−05<br>25 ° C<br>3.0<br>1.0E−06<br>2.0<br>1.0 1.0E−07<br>0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50<br>vF, INSTANTANEOUS FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>, REVERSE CURRENT (A)<br>IR<br>iF, INSTANTANEOUS FORWARD CURRENT (A<br>**----- End of picture text -----**<br>


**Figure 1. Typical Forward Voltage** 

**Figure 2. Typical Reverse Current** 

**==> picture [490 x 398] intentionally omitted <==**

**----- Start of picture text -----**<br>
28 20<br>26 dc R � JA = 16 ° C/W<br>24 18 dc R � JA = 60 ° C/W<br>22 16 (No Heat Sink)<br>20 SQUARE 14<br>18<br>12<br>16<br>14 10<br>12 8 dc<br>10<br>6<br>8<br>6 4 SQUARE<br>4 2 WAVE<br>2<br>0 0<br>145 150 155 160 165 170 175 0 25 50 75 100 125 150 175<br>TC, CASE TEMPERATURE ( ° C) TA, AMBIENT TEMPERATURE ( ° C)<br>Figure 3. Current Derating, Case, Per Leg Figure 4. Current Derating, Ambient<br>16<br>I SQUARE WAVE<br>14 (RESISTIVE LOAD) PK � �<br>I<br>AV<br>12<br>I<br>10 (CAPACITATIVE�LOAD) IPK � 5.0 dc<br>AV<br>8.0<br>10<br>6.0<br>20<br>4.0<br>TJ = 125 ° C<br>2.0<br>0<br>0 2.0 4.0 6.0 8.0 10 12 14 16 18 20<br>IF(AV), AVERAGE FORWARD CURRENT (A)<br>CURRENT (A) CURRENT (A)<br>, AVERAGE FORWARD  , AVERAGE FORWARD<br>IF(AV) IF(AV)<br>, AVERAGE POWER DISSIPATION (W)<br>F(AVE)<br>P<br>**----- End of picture text -----**<br>


**Figure 5. Forward Power Dissipation** 

**http://onsemi.com** 

**3** 

**MBR1635, MBR1645, MBRB1645, NRVBB1645** 

## **PACKAGE DIMENSIONS** 

**D[2] PAK** CASE 418B−04 ISSUE J 

**==> picture [466 x 506] intentionally omitted <==**

**----- Start of picture text -----**<br>
−B− C NOTES:<br>1. DIMENSIONING AND TOLERANCING<br>4 E PER ANSI Y14.5M, 1982.<br>V 2.3. 418B−01 THRU 418B−03 OBSOLETE,CONTROLLING DIMENSION: INCH.<br>W NEW STANDARD 418B−04.<br>INCHES MILLIMETERS<br>S DIM MIN MAX MIN MAX<br>1 2 3<br>A 0.340 0.380 8.64 9.65<br>A B 0.380 0.405 9.65 10.29<br>C 0.160 0.190 4.06 4.83<br>−T− D 0.020 0.035 0.51 0.89<br>SEATING E 0.045 0.055 1.14 1.40<br>PLANE G F 0.310 0.350 7.87 8.89<br>G 0.100 BSC 2.54 BSC<br>K H 0.080 0.110 2.03 2.79<br>D 3 PL J W KJ 0.0180.090 0.0250.110 2.290.46 2.790.64<br>0.13 (0.005) M T B M L 0.052 0.072 1.32 1.83<br>H M 0.280 0.320 7.11 8.13<br>N 0.197 REF 5.00 REF<br>VARIABLE P 0.079 REF 2.00 REF<br>CONFIGURATION R 0.039 REF 0.99 REF<br>ZONE N P S 0.575 0.625 14.60 15.88<br>R V 0.045 0.055 1.14 1.40<br>U<br>STYLE 3:<br>L L L PIN 1. ANODE<br>2. CATHODE<br>3. ANODE<br>M M M 4. CATHODE<br>F F F<br>VIEW W−W VIEW W−W VIEW W−W<br>1 2 3<br>SOLDERING FOOTPRINT*<br>8.38<br>0.33<br>10.66 1.016<br>5.08<br>0.42 0.04<br>0.20<br>3.05<br>0.12<br>17.02<br>0.67<br>SCALE 3:1<br>� inches [mm] �<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

**http://onsemi.com** 

**4** 

**MBR1635, MBR1645, MBRB1645, NRVBB1645** 

## **PACKAGE DIMENSIONS** 

**TO−220** CASE 221B−04 ISSUE E 

**==> picture [180 x 148] intentionally omitted <==**

**----- Start of picture text -----**<br>
C<br>Q B F T S<br>4<br>A<br>U<br>1 3<br>H<br>K<br>L<br>D R<br>J<br>G<br>**----- End of picture text -----**<br>


|**DIM**|**INCHES**|**INCHES**|**MILLIMETERS**|**MILLIMETERS**|
|---|---|---|---|---|
||**MIN**|**MAX**|**MIN**|**MAX**|
|**A**|0.595|0.620|15.11|15.75|
|**B**|0.380|0.405|9.65|10.29|
|**C**|0.160|0.190|4.06|4.82|
|**D**|0.025|0.035|0.64|0.89|
|**D**<br>**F**|0.025<br>0.142|0.035<br>0.161|0.64<br>3.61|0.89<br>4.09|
|**G**|0.190|0.210|4.83|5.33|
|**H**|0.110|0.130|2.79|3.30|
|**J**|0.014|0.025|0.36|0.64|
|**K**|0.500|0.562|12.70|14.27|
|**L**|0.045|0.060|1.14|1.52|
|**Q**|0.100|0.120|2.54|3.04|
|**Q**<br>**R**<br>**S**|0.100<br>0.080|0.120<br>0.110|2.54<br>2.04|3.04<br>2.79|
|**S**<br>**T**<br>**U**|0.045<br>0.235<br>0.000|0.055<br>0.255<br>0.050|1.14<br>5.97<br>0.000|1.39<br>6.48<br>1.27|



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**MBR1635/D** 

**5** 



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