# Schottky Rectifier, 45 V, 15 A, Dual Common Cathode, TO-263 (D2PAK), 3 Pins, 840 mV

![Product image](https://novapart.co/image/farnell:2317423RL/)

**URL**: https://novapart.co/products/MBRB1545CTT4G/schottky-rectifier-45-v-15-a-dual-common-cathode
**SKU**: MBRB1545CTT4G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes
**Price**: €0.6730
**Stock**: 500+
**Lead Time**: 78 days (indicative)

## Description

Repetitive Reverse Voltage Vrrm Max:45V; Forward Current If(AV):15A; Diode Configuration:Dual Common Cathode; Diode Case Style:TO-263; No. of Pins:3Pins; Forward Voltage VF Max:840mV;

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | MBRB1 |
| Qualification | - |
| Diode Mounting | Surface Mount |
| Diode Case Style | TO-263 (D2PAK) |
| Diode Configuration | Dual Common Cathode |
| Forward Voltage Max | 840mV |
| Forward Surge Current | 150A |
| Average Forward Current | 15A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 45V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2317423RL/)

## MBRB1545CTG, SBRB1545CTG 

## S witch-mode Power Rectifier 

## **D[2] PAK Surface Mount Power Package** 

The D[2] PAK Power Rectifier employs the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: 

## **Features** 

- Center−Tap Configuration 

## **http://onsemi.com** 

**SCHOTTKY BARRIER RECTIFIER 15 AMPERES 45 VOLTS** 

- Guardring for Stress Protection 

- Low Forward Voltage 

- 175°C Operating Junction Temperature 

- Epoxy Meets UL 94, V−0 @ 0.125 in 

- Short Heatsink Tab Manufactured − Not Sheared 

- Similar in Size to the Industry Standard TO220 Package 

- SBRB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free and are RoHS Compliant* 

**D[2] PAK CASE 418B STYLE 3** 

1 4 3 

## **Mechanical Characteristics** 

**MARKING DIAGRAM** 

- Case: Epoxy, Molded, Epoxy Meets UL 94, V−0 

- Weight: 1.7 grams (approximately) 

• Finish: All External Surfaces Corrosion Resistant and Terminal B1545 = Device Code AY    WW A = Assembly Location Leads are Readily Solderable B1545G Y = Year • Lead and Mounting Surface Temperature for Soldering Purposes: AKA WW = Work Week 260°C Max. for 10 Seconds G = Pb−Free Package • Device Meets MSL1 Requirements ~~:~~ AKA = Diode Polarity • ESD Ratings: ♦ Machine Model = C (> 400 V) ♦ Human Body Model = 3B (> 8000 V) **ORDERING INFORMATION Device Package Shipping**[†] MBRB1545CTG D[2] PAK 50 Units/Rail (Pb−Free) SBRB1545CTG D[2] PAK 50 Units/Rail (Pb−Free) MBRB1545CTT4G D[2] PAK 800/Tape & Reel (Pb−Free) SBRB1545CTT4G D[2] PAK 800/Tape & Reel (Pb−Free) ~~=e~~ †For information on tape and reel specifications, including part orientation and tape sizes, please *For additional information on our Pb−Free strategy and soldering details, please refer to our Tape and Reel Packaging Specifications download the ON Semiconductor Soldering and Mounting Techniques Brochure, BRD8011/D. 

> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Publication Order Number: **MBRB1545CT/D** 

**1** 

© Semiconductor Components Industries, LLC, 2012 **November, 2012 − Rev. 13** 

**MBRB1545CTG, SBRB1545CTG** 

## **MAXIMUM RATINGS** (Per Leg) 

|**MAXIMUM RATINGS**(Per Leg)||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|45|V|
|Average Rectified Forward Current<br>(Rated VR, TC= 167°C) Total Device|IF(AV)|7.5<br>15|A|
|Peak Repetitive Forward Current<br>(Rated VR, Square Wave, 20 kHz, TC= 166°C)|IFRM|15|A|
|Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|150|A|
|Peak Repetitive Reverse Surge Current (2.0�s, 1.0 kHz)|IRRM|1.0|A|
|Storage Temperature Range|Tstg|−65 to +175|°C|
|Operating Junction Temperature (Note 1)|TJ|−65 to +175|°C|
|Voltage Rate of Change (Rated VR)|dv/dt|10,000|V/�s|



Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R � JA. 

## **THERMAL CHARACTERISTICS** (Per Leg) 

|**THERMAL CHARACTERISTICS**(Per Leg)||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Thermal Resistance<br>Junction to Case<br>Junction to Ambient (Note 2)|R�JC<br>R�JA|2.0<br>50|°C/W|



2. When mounted using minimum recommended pad size on FR−4 board. 

## **ELECTRICAL CHARACTERISTICS** (Per Leg) 

|**ELECTRICAL CHARACTERISTICS**(Per Leg)||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Maximum Instantaneous Forward Voltage (Note 3)<br>(iF= 7.5 Amps, TJ= 125°C)<br>(iF= 15 Amps, TJ= 125°C)<br>(iF= 15 Amps, TJ= 25°C)|VF|0.57<br>0.72<br>0.84|V|
|Maximum Instantaneous Reverse Current (Note 3)<br>(Rated dc Voltage, TJ= 125°C)<br>(Rated dc Voltage, TJ= 25°C)|iR|15<br>0.1|mA|



3. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. 

**http://onsemi.com** 

**2** 

**MBRB1545CTG, SBRB1545CTG** 

**==> picture [489 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
50<br>30<br>20 10<br>10 125°C<br>1<br>3 85°C<br>2<br>0.1<br>1<br>0.5 125°C 85°C 25°C 0.01 25°C<br>0.001<br>0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 10 20 30 40 50<br>vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>, REVERSE LEAKAGE CURRENT (mA)<br>IR<br>iF, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>**----- End of picture text -----**<br>


**Figure 1. Typical Forward Voltage, Per Leg** 

**Figure 2. Typical Reverse Current, Per Leg** 

**==> picture [485 x 192] intentionally omitted <==**

**----- Start of picture text -----**<br>
14<br>16<br>TJ = 125°C IPK = DC<br>14 I AV 12<br>�<br>IPK<br>12 IPK = 10 IAV = 5 10<br>10 IPK I AV SQUARE<br>= 20 8<br>IAV<br>8<br>DC 6<br>6<br>4<br>SQUARE<br>4<br>WAVE<br>2<br>2<br>0 0<br>0 2 4 6 8 10 12 14 16 155 160 165 170 175<br>IF(AV), AVERAGE FORWARD CURRENT (AMPS) TC, CASE TEMPERATURE ( ° C)<br>, AVERAGE FORWARD CURRENT (A)<br>, AVERAGE FORWARD POWER DISSIPATION (WATTS)PF(AV) IF(AV)<br>**----- End of picture text -----**<br>


**Figure 3. Typical Forward Power Dissipation** 

**Figure 4. Current Derating, Case, Per Leg** 

**http://onsemi.com** 

**3** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

## **D[2] PAK 3** 

CASE 418B−04 

**==> picture [442 x 456] intentionally omitted <==**

**----- Start of picture text -----**<br>
ISSUE L<br>SCALE 1:1 NOTES:<br>C 1. DIMENSIONING AND TOLERANCING<br>PER ANSI Y14.5M, 1982.<br>E 2. CONTROLLING DIMENSION: INCH.<br>−B− V 3. 418B−01 THRU 418B−03 OBSOLETE,NEW STANDARD 418B−04.<br>W<br>4 INCHES MILLIMETERS<br>DIM MIN MAX MIN MAX<br>A 0.340 0.380 8.64 9.65<br>B 0.380 0.405 9.65 10.29<br>A C 0.160 0.190 4.06 4.83<br>S D 0.020 0.035 0.51 0.89<br>1 2 3 E 0.045 0.055 1.14 1.40<br>F 0.310 0.350 7.87 8.89<br>G 0.100 BSC 2.54 BSC<br>−T− H 0.080 0.110 2.03 2.79<br>K J 0.018 0.025 0.46 0.64<br>SEATINGPLANE G J W KL 0.0900.052 0.0720.110 2.291.32 2.791.83<br>M 0.280 0.320 7.11 8.13<br>ae H N 0.197 REF 5.00 REF<br>D 3 PL P 0.079 REF 2.00 REF<br>R 0.039 REF 0.99 REF<br>0.13 (0.005) M T B M S 0.575 0.625 14.60 15.88<br>V 0.045 0.055 1.14 1.40<br>VARIABLE<br>CONFIGURATION<br>ZONE N P<br>R<br>U<br>L L L<br>M M M<br>F F F<br>VIEW W−W VIEW W−W VIEW W−W<br>1 2 3<br>STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5: STYLE 6:<br>PIN 1. BASE PIN 1. GATE PIN 1. ANODE PIN 1. GATE PIN 1. CATHODE PIN 1. NO CONNECT<br>2. COLLECTOR 2. DRAIN 2. CATHODE 2. COLLECTOR 2. ANODE 2. CATHODE<br>3. EMITTER 3. SOURCE 3. ANODE 3. EMITTER 3. CATHODE 3. ANODE<br>4. COLLECTOR 4. DRAIN 4. CATHODE 4. COLLECTOR 4. ANODE 4. CATHODE<br>**----- End of picture text -----**<br>


DATE 17 FEB 2015 

## **MARKING INFORMATION AND FOOTPRINT ON PAGE 2** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42761B** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: D[2] PAK 3 PAGE 1 OF 2** ~~|eee1~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

**==> picture [182 x 232] intentionally omitted <==**

**----- Start of picture text -----**<br>
D [2] PAK 3<br>CASE 418B−04<br>ISSUE L<br>GENERIC<br>MARKING DIAGRAM*<br>xx AYWW<br>xxxxxxxxG<br>xxxxxxxxx xxxxxxxxG<br>AYWW<br>AWLYWWG  AKA<br>oe<br>IC Standard Rectifier<br>xx = Specific Device Code<br>A = Assembly Location<br>WL = Wafer Lot<br>Y = Year<br>WW = Work Week<br>G = Pb−Free Package<br>AKA = Polarity Indicator<br>**----- End of picture text -----**<br>


DATE 17 FEB 2015 

- *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. 

## **SOLDERING FOOTPRINT*** 

**==> picture [147 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
10.49<br>8.38<br>16.155 T L 7<br>2X<br>3.504<br>2X<br>UE<br>1.016<br>5.080<br>aro<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42761B** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: D[2] PAK 3 PAGE 2 OF 2** ~~—~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

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