# Schottky Rectifier, 200 V, 3 A, Single, SMAF, 2 Pins, 840 mV ![Product image](https://novapart.co/image/farnell:2824888RL/) **URL**: https://novapart.co/products/MBRAF3200T3G/schottky-rectifier-200-v-3-a-single-smaf-2-pins **SKU**: MBRAF3200T3G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes **Price**: €0.2520 **Stock**: 1000+ **Lead Time**: 85 days (indicative) ## Description Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):3A; Diode Configuration:Single; Diode Case Style:SMAF; No. of Pins:2Pins; Forward Voltage VF Max:840mV; Forward Su ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 2Pins | | Product Range | - | | Qualification | AEC-Q101 | | Diode Mounting | Surface Mount | | Diode Case Style | SMAF | | Diode Configuration | Single | | Forward Voltage Max | 840mV | | Forward Surge Current | 100A | | Average Forward Current | 3A | | Operating Temperature Max | 150°C | | Repetitive Peak Reverse Voltage | 200V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2824888RL/) ## MBRAF3200, NRVBAF3200 ## Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. ## **Features** - Small Compact Surface Mountable Package with J−Bend Leads - Rectangular Package for Automated Handling **www.onsemi.com** **SCHOTTKY BARRIER RECTIFIER 3.0 AMPERE 200 VOLTS** - Highly Stable Oxide Passivated Junction - Very High Blocking Voltage − 200 V - 150°C Operating Junction Temperature - Guard−Ring for Stress Protection - NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - This is a Pb−Free Device ## **Mechanical Charactersistics** - Case: Epoxy, Molded, Epoxy Meets UL 94, V−0 - Weight: 95 mg (approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds - Cathode Polarity Band - Device Meets MSL 1 Requirements - ESD Ratings: Machine Model = A ESD Ratings: Human Body Model = 1B ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage|VRRM
VRWM
VR|200|V| |Average Rectified Forward Current
(TL= 100°C)|IF(AV)|3.0|A| |Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)|IFSM|100|A| |Operating Junction Temperature|TJ|−65 to +150|°C| **SMA−FL CASE 403AA STYLE 6** ## **MARKING DIAGRAM** RAC AYWW |p RAC = Specific Device Code A = Assembly Location Y = Year WW = Work Week = Pb−Free Package **ORDERING INFORMATION Device Package Shipping**[†] MBRAF3200T3G SMA−FL 5000 / Tape & Reel (Pb−Free) NRVBAF3200T3G SMA−FL 5000 / Tape & Reel (Pb−Free) ~~oe~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Publication Order Number: **MBRAF3200T3/D** **1** © Semiconductor Components Industries, LLC, 2016 **December, 2016 − Rev. 3** **MBRAF3200, NRVBAF3200** ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Thermal Resistance, Junction−to−Lead (Note 1
Thermal Resistance, Junction−to−Ambient (Note 1)|R�JL
R�JA|25
90|°C/W| 1. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board. ## **ELECTRICAL CHARACTERISTICS** |**ELECTRICAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Maximum Instantaneous Forward Voltage (Note 2)
(IF= 3.0 A, TJ= 25°C)
(IF= 4.0 A, TJ= 25°C)
(IF= 3.0 A, TJ= 150°C)|VF|0.84
0.86
0.62|V| |Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ= 25°C)
(Rated dc Voltage, TJ= 150°C)|IR|1.0
6.0|mA
mA| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. **==> picture [491 x 391] intentionally omitted <==** **----- Start of picture text -----**
100 100
TC = 100 ° C TC = 100 ° C
10 TC = 150 ° C TC = 25 ° C 10 TC = 150 ° C TC = 25 ° C
1 1
0.1 0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
VF, INSTANTANEOUS VOLTAGE (V) VF, INSTANTANEOUS VOLTAGE (V)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
1.0E−03 1.0E−01
T C = 150 ° C
1.0E−04
1.0E−02
1.0E−05 TC = 100 ° C TC = 150 ° C
1.0E−03
1.0E−06 T C = 25 ° C
1.0E−04
1.0E−07
1.0E−05
1.0E−08 TC = 25 ° C
1.0E−09 1.0E−06
0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200
VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V)
, FORWARD CURRENT (A) , FORWARD CURRENT (A)
IF IF
, REVERSE CURRENT (A)
IR
, MAXIMUM REVERSE CURRENT (A)
IR
**----- End of picture text -----**
**Figure 3. Typical Reverse Current** **Figure 4. Maximum Reverse Current** **www.onsemi.com** **2** **MBRAF3200, NRVBAF3200** **==> picture [492 x 394] intentionally omitted <==** **----- Start of picture text -----**
1000 5
TC = 25 ° C DC R JL = 25 ° C/W
SSS ASN
f = 1 MHz 4
ee
Typical Capacitance
at 0 V = 209 V | | | | | 3 SQUARE \
AA WAVE
100
SSSSSSSSSS 2 UII NIT
KO \
1
Pp | oe eee \
10 A 0
0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180
VR, REVERSE VOLTAGE (V) TC, LEAD TEMPERATURE (C ° )
Figure 5. Typical Capacitance
Figure 6. Current Derating
100
50% Duty Cycle
ee 20%
10 10% Sa oe
5%
2%
1
1%
0.1 pt rr dd dt} EHH
Pt et TP Pee ty - TTT
0.01 Single Pulse
0.001 LT TTT TPT PTET TPTTPT
0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, PULSE TIME (S)
C, CAPACITANCE (pF)
I , AVERAGE FORWARD CURRENT (A)F (AV)
C/W)
°
RESISTANCE (
, TYPICAL TRANSIENT THERMAL
(t)
R
**----- End of picture text -----**
**Figure 7. Typical Transient Thermal Response, Junction−to−Ambient** **www.onsemi.com** **3** **MBRAF3200, NRVBAF3200** ## **PACKAGE DIMENSIONS** **SMA−FL** CASE 403AA ISSUE A **==> picture [408 x 260] intentionally omitted <==** **----- Start of picture text -----**
E
NOTES:
E1 1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
MILLIMETERS
D DIM MIN MAX
A 0.90 1.10
b 1.25 1.65
c 0.15 0.30
D 2.40 2.80
TOP VIEW E 4.80 5.40
E1 4.00 4.60
[f — A = L 0.70 1.10
if RECOMMENDED
SOLDER FOOTPRINT*
c
SIDE VIEW C SEATING
PLANE 5.56
1.76
: 3 ro
2X b
1.30
Wey 2X L DIMENSIONS: MILLIMETERS
BOTTOM VIEW *For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
**----- End of picture text -----**
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