# Schottky Rectifier, General Purpose, 10 V, 2 A, Single, DO-214AC (SMA), 2 Pins, 350 mV ![Product image](https://novapart.co/image/farnell:1459060/) **URL**: https://novapart.co/products/MBRA210LT3G/schottky-rectifier-general-purpose-10-v-2-a-single **SKU**: MBRA210LT3G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes **Price**: €0.1840 **Stock**: 1000+ **Lead Time**: 83 days (indicative) ## Description Repetitive Reverse Voltage Vrrm Max:10V; Forward Current If(AV):2A; Diode Configuration:Single; Diode Case Style:DO-214AC; No. of Pins:2Pins; Forward Voltage VF Max:350mV; Forward Surge Current ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 2Pins | | Product Range | MBRA2 | | Qualification | AEC-Q101 | | Diode Mounting | Surface Mount | | Diode Case Style | DO-214AC (SMA) | | Diode Configuration | Single | | Forward Voltage Max | 350mV | | Forward Surge Current | 160A | | Average Forward Current | 2A | | Operating Temperature Max | 125°C | | Repetitive Peak Reverse Voltage | 10V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:1459060/) ## MBRA210L, NRVBA210L ## Surface Mount Schottky Power Rectifier **SMA Power Surface Mount Package** This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical. ## **www.onsemi.com** **SCHOTTKY BARRIER RECTIFIER 2 AMPERES 10 VOLTS** ## **Features** - Ultra Low VF - 1st in the Market Place with a 10 VR Schottky Rectifier - Compact Package with J−Bend Leads Ideal for Automated Handling - Highly Stable Oxide Passivated Junction **SMA CASE 403D** - Guardring for Over−Voltage Protection - Optimized for Low Forward Voltage - NRVBA Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **Mechanical Characteristics:** - Case: Molded Epoxy - Epoxy Meets UL 94 V−0 @ 0.125 in - Weight: 70 mg (Approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ## **MARKING DIAGRAM** **==> picture [146 x 102] intentionally omitted <==** **----- Start of picture text -----**
B2L1
AYWW
B2L1 = Specific Device Code
A = Assembly Location**
Y = Year
WW = Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
**----- End of picture text -----**
- **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. - Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds - Polarity: Polarity Band Indicates Cathode Lead - ESD Ratings: - ♦ Machine Model = C - ♦ Human Body Model = 3A **ORDERING INFORMATION** **Device Package Shipping**[†] MBRA210LT3G SMA 5,000 / Tape (Pb−Free) & Reel NRVBA210LT3G* SMA 5,000 / Tape (Pb−Free) & Reel ~~=~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: **MBRA210LT3/D** **1** © Semiconductor Components Industries, LLC, 2012 **April, 2017 − Rev. 6** **MBRA210L, NRVBA210L** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage|VRRM
VRWM
VR|10|V| |Average Rectified Forward Current
(At Rated VR, TL= 110°C)|IO|2.0|A| |Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|160|A| |Storage/Operating Case Temperature
Operating Junction Temperature|Tstg, TC
TJ|−55 to +125|°C| |Voltage Rate of Change
(Rated VR, TJ= 25°C)|dv/dt|10,000|V/�s| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Min Pad**|**1 Inch** **Pad**|**Unit**| |Thermal Resistance, Junction−to−Lead
Thermal Resistance, Junction−to−Ambient|R�JL
R�JA|22
150|15
81|°C/W| |**ELECTRICAL CHARACTERISTICS**||||| |Maximum Instantaneous Forward Voltage (Note 1)
(IF= 0.1 A)
(IF= 1.0 A)
(IF= 2.0 A)|VF|**TJ = 25**°**C**|**TJ = 100**°**C**|V| |||0.260
0.325
0.350|0.15
0.23
0.26|| |Maximum Instantaneous Reverse Current
(VR= 5.0 V)
(VR= 10 V)|IR|**TJ = 25**°**C**|**TJ = 100**°**C**|mA| |||0.25
0.70|40
60|| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 250 � s, Duty Cycle ≤ 2%. **==> picture [489 x 181] intentionally omitted <==** **----- Start of picture text -----**
100 100
VF @ 125 ° C VF @ 125 ° C
10 25 ° C 10 25 ° C
100 ° C 100 ° C
75 ° C 75 ° C
1 1
0.1 0.1
0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.05 0.15 0.25 0.35 0.45 0.55
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
CURRENT (AMPS)
, INSTANTANEOUS FORWARDIF , MAXIMUM INSTANTANEOUSIF FORWARD CURRENT (AMPS)
**----- End of picture text -----**
**Figure 1. Typical Forward Voltage** **Figure 2. Maximum Forward Voltage** **www.onsemi.com** **2** **MBRA210L, NRVBA210L** **==> picture [254 x 171] intentionally omitted <==** **----- Start of picture text -----**
1.0E−01
IR @ 125 ° C
1.0E−02 100 ° C
75 ° C
1.0E−03
1.0E−04
25 ° C
1.0E−05
0 2 4 6 8 10
VR, REVERSE VOLTAGE (VOLTS)
, REVERSE CURRENT (AMPS)
IR
**----- End of picture text -----**
**Figure 3. Typical Reverse Current** **==> picture [489 x 401] intentionally omitted <==** **----- Start of picture text -----**
3.5 0.9
dc
3 RATED VOLTAGE APPLIED 0.8 TJ = 125 ° C dc
R � JL = 22 ° C/W 0.7
2.5 SQUARE WAVE T J = 125 ° C 0.6
SQUARE WAVE
2 0.5
1.5 0.4
0.3
1
0.2
0.5
0.1
0 0
90 95 100 105 110 115 120 125 130 0 0.5 1 1.5 2 2.5 3 3.5
TL, LEAD TEMPERATURE ( ° C) IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 4. Current Derating − Junction to Lead Figure 5. Forward Power Dissipation
10,000
25 ° C
f = 1 MHz
1000
100
0 1 2 3 4 5 6 7 8 9 10
VR, REVERSE VOLTAGE (VOLTS)
CURRENT (AMPS)
, AVERAGE FORWARD
IF
, AVERAGE POWER DISSIPATION (WATTS)
FO
P
C, CAPACITANCE (pF)
**----- End of picture text -----**
**Figure 6. Typical Capacitance** **www.onsemi.com** **3** **MBRA210L, NRVBA210L** **==> picture [491 x 431] intentionally omitted <==** **----- Start of picture text -----**
100
D = 0.5
0.2
0.1
10
0.05
0.02
0.01
1
SINGLE PULSE
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, TIME (S)
Figure 7. Thermal Response, Junction to Ambient (min pad)
100
D = 0.5
0.2
10 0.1
0.05
0.02
1 0.01
SINGLE PULSE
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, TIME (S)
C/W)
°
, TRANSIENT THERMAL RESISTANCE (
(t)
R
C/W)
°
, TRANSIENT THERMAL RESISTANCE (
(t)
R
**----- End of picture text -----**
**Figure 8. Thermal Response, Junction to Ambient (1 inch pad)** **www.onsemi.com** **4** **MBRA210L, NRVBA210L** ## **PACKAGE DIMENSIONS** **SMA** CASE 403D ISSUE H **==> picture [470 x 383] intentionally omitted <==** **----- Start of picture text -----**
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
E 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L.
=
MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
b D A 1.97 2.10 2.20 0.078 0.083 0.087
A1 0.05 0.10 0.20 0.002 0.004 0.008
b 1.27 1.45 1.63 0.050 0.057 0.064
c 0.15 0.28 0.41 0.006 0.011 0.016
Le POLARITY INDICATOR D 2.29 2.60 2.92 0.090 0.103 0.115
OPTIONAL AS NEEDED bay ==SSSeE E 4.06 4.32 4.57 0.160 0.170 0.180
(SEE STYLES) H E 4.83 5.21 5.59 0.190 0.205 0.220
L 0.76 1.14 1.52 0.030 0.045 0.060
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
A
A1
=], L c Sn
SOLDERING FOOTPRINT*
4.000
0.157
2.000
0.079
oy
oe
2.000
|
0.079
SCALE 8:1 mm
(—) inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
**----- End of picture text -----**
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