# Schottky Rectifier, 100 V, 1 A, Single, DO-214AC (SMA), 2 Pins, 840 mV
**URL**: https://novapart.co/products/MBRA1H100T3G/schottky-rectifier-100-v-1-a-single-do-214ac-sma-2
**SKU**: MBRA1H100T3G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes
**Price**: €0.3660
**Stock**: 10+
## Specifications
| Parameter | Value |
|---|---|
| No. Of Pins | 2Pins |
| Qualification | AEC-Q101 |
| Diode Mounting | Surface Mount |
| Diode Case Style | DO-214AC (SMA) |
| Diode Configuration | Single |
| Forward Voltage Max | 840mV |
| Forward Surge Current | 50A |
| Average Forward Current | 1A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 100V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2630383/)
## MBRA1H100T3G, NRVBA1H100T3G
## Surface Mount Schottky Power Rectifier **SMA Power Surface Mount Package**
**http://onsemi.com**
Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system.
**SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 100 VOLTS**
## **Features**
- Small Compact Surface Mountable Package with J−Bent Leads
- Rectangular Package for Automated Handling
- Highly Stable Oxide Passivated Junction
- Low Forward Voltage Drop
- Guardring for Stress Protection
- AEC−Q101 Qualified and PPAP Capable
- NRVBA Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
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**----- Start of picture text -----**
SMA
CASE 403D
PLASTIC
1 2
Cathode Anode
**----- End of picture text -----**
## **MARKING DIAGRAMS**
- This is a Pb−Free Device*
## **Mechanical Characteristics:**
- Case: Epoxy, Molded
- Weight: 70 mg (approximately)
- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
- Lead and Mounting Surface Temperature for Soldering Purposes: 260 C Max. for 10 Seconds
- Polarity: Cathode Lead Indicated by Polarity Band
- ESD Ratings:
- Machine Model = C
- Human Body Model = 3B
- Device Meets MSL 1 Requirements
A110 AYWW A110 = Device Code A = Assembly Location Y = Year WW = Work Week = Pb−Free Package **ORDERING INFORMATION Device Package Shipping**[†] MBRA1H100T3G SMA 5,000 / (Pb−Free) Tape & Reel ** NRVBA1H100T3G SMA 5,000 / (Pb−Free) Tape & Reel ** ~~==~~ ** 12 mm Tape, 13” Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Publication Order Number: **MBRA1H100/D**
**1**
Semiconductor Components Industries, LLC, 2012 **January, 2012 − Rev. 2**
**MBRA1H100T3G, NRVBA1H100T3G**
## **MAXIMUM RATINGS**
|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage|VRRM
VRWM
VR|100|V|
|Average Rectified Forward Current
(TL= 167C)|IO|1.0|A|
|Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|50|A|
|Storage and Operating Junction Temperature Range (Note 1)|Tstg, TJ|−65 to +175|C|
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R � JA.
## **THERMAL CHARACTERISTICS**
|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Thermal Resistance, Junction−to−Lead (Note 2)|�JCL|14|C/W|
|Thermal Resistance, Junction−to−Ambient (Note 2)|R�JA|75|C/W|
|Thermal Resistance, Junction−to−Ambient (Note 3)|R�JA|280|C/W|
2. Mounted with 700 mm[2] copper pad size (Approximately 1 in[2] ) 1 oz FR4 Board.
3. Mounted with pad size approximately 6 mm[2] copper, 1 oz FR4 Board.
## **ELECTRICAL CHARACTERISTICS**
|**ELECTRICAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Maximum Instantaneous Forward Voltage (Note 4)
(IF= 1.0 A, TJ= 25C)
(IF= 2.0 A, TJ= 25C)
(IF= 1.0 A, TJ= 125C)
(IF= 2.0 A, TJ= 125C)|VF|0.76
0.84
0.61
0.68|V|
|Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, TJ= 25C)
(Rated dc Voltage, TJ= 125C)|IR|40
0.5|�A
mA|
4. Pulse Test: Pulse Width 380 � s, Duty Cycle 2.0%.
**http://onsemi.com**
**2**
**MBRA1H100T3G, NRVBA1H100T3G**
## **TYPICAL CHARACTERISTICS**
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**----- Start of picture text -----**
100 100
150C 125C 25C 150C 125C 25C
10 10
1 1
0.1 0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
10 10
1 150C 1 150C
0.1 125C 0.1 125C
0.01 0.01
25C
0.001 0.001
0.0001 25C 0.0001
0.00001 0.00001
0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90 100
VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
2.0 1.0
dc R � JL = 14C/W TJ = 175C Square Wave
0.8
1.5
dc
Square Wave 0.6
1.0
0.4
0.5
0.2
0 0
135 140 145 150 155 160 165 170 175 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
TL, LEAD TEMPERATURE (C) IO, AVERAGE FORWARD CURRENT (A)
, FORWARD CURRENT (A) , FORWARD CURRENT (A)
IF IF
, REVERSE CURRENT (mA) , REVERSE CURRENT (mA)
IR IR
, AVERAGE FORWARD CURRENT (A)
, AVERAGE POWER DISSIPATION (W)
IF(AV) PFO
**----- End of picture text -----**
**Figure 5. Current Derating**
**Figure 6. Forward Power Dissipation**
**http://onsemi.com**
**3**
**MBRA1H100T3G, NRVBA1H100T3G**
## **TYPICAL CHARACTERISTICS**
**==> picture [244 x 175] intentionally omitted <==**
**----- Start of picture text -----**
140
TJ = 25C
120
100
80
60
40
20
0
0 10 20 30 40 50 60 70 80 90 100
VR, REVERSE VOLTAGE (V)
C, CAPACITANCE (pF)
**----- End of picture text -----**
**Figure 7. Capacitance**
**==> picture [490 x 174] intentionally omitted <==**
**----- Start of picture text -----**
1000
50% (DUTY CYCLE)
100 20%
10%
5.0%
10 2.0%
1.0%
1.0
0.1
SINGLE PULSE
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000
PULSE TIME (s)
R(t) (C/W)
**----- End of picture text -----**
**Figure 8. Thermal Response, Junction−to−Ambient (6 mm[2] pad)**
**==> picture [490 x 174] intentionally omitted <==**
**----- Start of picture text -----**
100
50% (DUTY CYCLE)
20%
10 10%
5.0%
2.0%
1.0
1.0%
0.1
SINGLE PULSE
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000
PULSE TIME (s)
R(t) (C/W)
**----- End of picture text -----**
**Figure 9. Thermal Response, Junction−to−Ambient (1 in[2] pad)**
**http://onsemi.com**
**4**
**MBRA1H100T3G, NRVBA1H100T3G**
## **PACKAGE DIMENSIONS**
**SMA** CASE 403D−02 ISSUE F
**==> picture [266 x 198] intentionally omitted <==**
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HE
E
=~F b D
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
ian
A
A1
-, L c [=] fp)
**----- End of picture text -----**
**==> picture [196 x 121] intentionally omitted <==**
**----- Start of picture text -----**
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 403D−01 OBSOLETE, NEW STANDARD IS 403D−02.
MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
A 1.97 2.10 2.20 0.078 0.083 0.087
S——_———
A1 0.05 0.10 0.15 0.002 0.004 0.006
b 1.27 1.45 1.63 0.050 0.057 0.064
c 0.15 0.28 0.41 0.006 0.011 0.016
D 2.29 2.60 2.92 0.090 0.103 0.115
E 4.06 4.32 4.57 0.160 0.170 0.180
H E 4.83 5.21 5.59 0.190 0.205 0.220
L 0.76 1.14 1.52 0.030 0.045 0.060
**----- End of picture text -----**
**==> picture [93 x 19] intentionally omitted <==**
**----- Start of picture text -----**
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
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## **SOLDERING FOOTPRINT***
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**----- Start of picture text -----**
4.0
0.157
2.0
0.0787
EE [—]
2.0
|
0.0787
SCALE 8:1 mm
(—}) inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
**----- End of picture text -----**
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## **PUBLICATION ORDERING INFORMATION**
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## **LITERATURE FULFILLMENT** :
**ON Semiconductor Website** : **www.onsemi.com**
**Order Literature** : http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative
**MBRA1H100/D**
**http://onsemi.com 5**
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---
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