# Schottky Rectifier, 30 V, 1 A, Single, DO-214AC (SMA), 2 Pins, 410 mV ![Product image](https://novapart.co/image/farnell:9555978RL/) **URL**: https://novapart.co/products/MBRA130LT3G/schottky-rectifier-30-v-1-a-single-do-214ac-sma-2 **SKU**: MBRA130LT3G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes **Price**: €0.0970 **Stock**: 1000+ **Lead Time**: 83 days (indicative) ## Description Repetitive Reverse Voltage Vrrm Max:30V; Forward Current If(AV):1A; Diode Configuration:Single; Diode Case Style:DO-214AC; No. of Pins:2Pins; Forward Voltage VF Max:410mV; Forward Surge Cur ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 2Pins | | Product Range | - | | Qualification | AEC-Q101 | | Diode Mounting | Surface Mount | | Diode Case Style | DO-214AC (SMA) | | Diode Configuration | Single | | Forward Voltage Max | 410mV | | Forward Surge Current | 25A | | Average Forward Current | 1A | | Operating Temperature Max | 125°C | | Repetitive Peak Reverse Voltage | 30V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:9555978RL/) ## MBRA130LT3G, NRVBA130LT3G ## Surface Mount Schottky Power Rectifier **SMA Power Surface Mount Package** This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. **www.onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 30 VOLTS** ## **Features** - Compact Package with J−Bend Leads Ideal for Automated Handling - Highly Stable Oxide Passivated Junction - Guardring for Over−Voltage Protection - Low Forward Voltage Drop - NRVBA Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **Mechanical Characteristics:** - Case: Molded Epoxy - Epoxy Meets UL 94 V−0 @ 0.125 in - Weight: 70 mg (approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds - Polarity: Cathode Lead Indicated by Either Notch in Plastic Body or Polarity Band - Device Meets MSL1 Requirements **==> picture [44 x 27] intentionally omitted <==** **----- Start of picture text -----**
SMA
CASE 403D
PLASTIC
**----- End of picture text -----**
## **MARKING DIAGRAM** **==> picture [146 x 105] intentionally omitted <==** **----- Start of picture text -----**
B1L3
AYWW
B1L3 = Specific Device Code
A = Assembly Location***
Y = Year
WW = Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
**----- End of picture text -----**
- ***The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. - ESD Ratings: - ♦ Machine Model = C (> 400 V) - ♦ Human Body Model = 3B (> 8000 V) **ORDERING INFORMATION** **Device Package Shipping**[†] MBRA130LT3G SMA 5,000 / (Pb−Free) Tape & Reel ** NRVBA130LT3G* SMA 5,000 / (Pb−Free) Tape & Reel ** ~~=~~ ** 12 mm Tape, 13” Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: **MBRA130LT3/D** **1** © Semiconductor Components Industries, LLC, 2012 **April, 2017 − Rev. 9** ## **MBRA130LT3G, NRVBA130LT3G** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage|VRRM
VRWM
VR|30|V| |Average Rectified Forward Current
(At Rated VR, TC= 105°C)|IO|1.0|A| |Peak Repetitive Forward Current
(At Rated VR, Square Wave, 100 kHz, TC= 105°C)|IFRM|2.0|A| |Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|25|A| |Storage Temperature|Tstg|−55 to +150|°C| |Operating Junction Temperature|TJ|−55 to +125|°C| |Voltage Rate of Change, (Rated VR, TJ= 25°C)|dv/dt|10,000|V/�s| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Thermal Resistance — Junction−to−Lead (Note 1)
Thermal Resistance — Junction−to−Ambient (Note 1)|R�JL
R�JA|35
86|°C/W| 1. Mounted on 2 ″ Square PC Board with 1 ″ Square Total Pad Size, PC Board FR4. ## **ELECTRICAL CHARACTERISTICS** |**ELECTRICAL CHARACTERISTICS**||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Value**||**Unit**| |Maximum Instantaneous Forward Voltage (Note 2)
(IF= 1.0 A) see Figure 2
(IF= 2.0 A)|VF|**TJ = 25**°**C**|**TJ = 100**°**C**|Volts| |||0.41
0.47|0.35
0.43|| |Maximum Instantaneous Reverse Current
(VR= 30 V) see Figure 4
(VR= 15 V)|IR|**TJ = 25**°**C**|**TJ = 100**°**C**|mA| |||1.0
0.4|25
12|| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 250 � s, Duty Cycle ≤ 2.0%. **www.onsemi.com** **2** **MBRA130LT3G, NRVBA130LT3G** **==> picture [492 x 405] intentionally omitted <==** **----- Start of picture text -----**
10 10
TJ = 125°C TJ = 125°C
1.0 1.0
TJ = 85°C
TJ = 25°C TJ = 85°C
TJ = -40°C TJ = 25°C
0.1 0.1
0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
100E-3 100E-3
10E-3 10E-3
TJ = 125°C
1.0E-3 TJ = 85°C 1.0E-3 TJ = 85°C
100E-6 100E-6 TJ = 25°C
10E-6 10E-6
TJ = 25°C
1.0E-6 1.0E-6
0 10 20 30 0 10 20 30
VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)
, INSTANTANEOUS FORWARD CURRENT (AMPS)
iF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF
, REVERSE CURRENT (AMPS)
IR
, MAXIMUM REVERSE CURRENT (AMPS)
IR
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**Figure 3. Typical Reverse Current** **Figure 4. Maximum Reverse Current** **www.onsemi.com** **3** **MBRA130LT3G, NRVBA130LT3G** **==> picture [492 x 174] intentionally omitted <==** **----- Start of picture text -----**
2.0 0.6
1.8 FREQ = 20 kHz SQUARE WAVE dc
dc 0.5
1.6 Ipk/Io = �
1.4
0.4 Ipk/Io = 5
1.2 SQUARE WAVE
Ipk/Io = 10
1.0 0.3
Ipk/Io = �
0.8 Ipk/Io = 20
Ipk/Io = 5 0.2
0.6
Ipk/Io = 10
0.4
Ipk/Io = 20 0.1
0.2
0 0
0 20 40 60 80 100 120 140 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS)
, AVERAGE POWER DISSIPATION (WATTS)
, AVERAGE FORWARD CURRENT (AMPS)
IO PFO
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**Figure 5. Current Derating** **Figure 6. Forward Power Dissipation** **==> picture [492 x 190] intentionally omitted <==** **----- Start of picture text -----**
T, TIME (s)
1.0E+0
100E-3
10E-3
1.0E-3
100E-6
10E-6 100E-6 1.0E-3 10E-3 100E-3 1.0E+0 10E+0 100E+0 1.0E+3
T, TIME (s)
R(T), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
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**Figure 7. Thermal Response** **==> picture [243 x 173] intentionally omitted <==** **----- Start of picture text -----**
1000
TJ = 25°C
100
10
1.0
0 5.0 10 15 20 25 30 35 40
VR, REVERSE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
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**Figure 8. Capacitance** **www.onsemi.com** **4** **MBRA130LT3G, NRVBA130LT3G** ## **PACKAGE DIMENSIONS** **SMA** CASE 403D ISSUE H **==> picture [355 x 387] intentionally omitted <==** **----- Start of picture text -----**
HE
NOTES:
1.
E 1982.
2.
3.
=
DIM MIN NOM
b D A 1.97 2.10
A1 0.05 0.10
b 1.27 1.45
c 0.15 0.28
ja: POLARITY INDICATOR D 2.29 2.60
OPTIONAL AS NEEDED bay E 4.06 4.32
(SEE STYLES) H E 4.83 5.21
L 0.76 1.14
A
A1
=, L c =n
SOLDERING FOOTPRINT*
4.000
0.157
2.000
0.079
ot
oe
2.000
an
0.079
SCALE 8:1 mm
(—) inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
**----- End of picture text -----**
**==> picture [199 x 111] intentionally omitted <==** **----- Start of picture text -----**
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L.
MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
A 1.97 2.10 2.20 0.078 0.083 0.087
A1 0.05 0.10 0.20 0.002 0.004 0.008
b 1.27 1.45 1.63 0.050 0.057 0.064
c 0.15 0.28 0.41 0.006 0.011 0.016
D 2.29 2.60 2.92 0.090 0.103 0.115
S=SSaa E 4.06 4.32 4.57 0.160 0.170 = 0.180
H E 4.83 5.21 5.59 0.190 0.205 0.220
L 0.76 1.14 1.52 0.030 0.045 0.060
**----- End of picture text -----**
**==> picture [238 x 200] intentionally omitted <==** **----- Start of picture text -----**
A
A1
c
SOLDERING FOOTPRINT*
4.000
0.157
2.000
0.079
ot
oe
2.000
an
0.079
SCALE 8:1 mm
(—) inches
**----- End of picture text -----**
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