# Schottky Rectifier, 20 V, 1 A, Single, DO-214AC (SMA), 2 Pins, 530 mV ![Product image](https://novapart.co/image/farnell:1431075/) **URL**: https://novapart.co/products/MBRA120ET3G/schottky-rectifier-20-v-1-a-single-do-214ac-sma-2 **SKU**: MBRA120ET3G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes **Price**: €0.1100 **Stock**: 1000+ **Lead Time**: 83 days (indicative) ## Description Repetitive Reverse Voltage Vrrm Max:20V; Forward Current If(AV):1A; Diode Configuration:Single; Diode Case Style:DO-214AC; No. of Pins:2Pins; Forward Voltage VF Max:530mV; Forward Surge Cur ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 2Pins | | Product Range | MBRA1 | | Qualification | AEC-Q101 | | Diode Mounting | Surface Mount | | Diode Case Style | DO-214AC (SMA) | | Diode Configuration | Single | | Forward Voltage Max | 530mV | | Forward Surge Current | 40A | | Average Forward Current | 1A | | Operating Temperature Max | 150°C | | Repetitive Peak Reverse Voltage | 20V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:1431075/) ## MBRA120E, NRVBA120E ## Surface Mount Schottky Power Rectifier **SMA Power Surface Mount Package** Employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. ## **Features** - Compact Package with J−Bend Leads Ideal for Automated Handling - Highly Stable Oxide Passivated Junction - Guardring for Over−Voltage Protection **www.onsemi.com** **SCHOTTKY BARRIER RECTIFIER 1 AMPERE 20 VOLTS** ## **MARKING DIAGRAM** - Optimized for Low Leakage Current - NRVBA Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **Mechanical Characteristics:** - Case: Molded Epoxy - Epoxy Meets UL94, VO at 1/8″ - Weight: 70 mg (approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds - Polarity: Polarity Band Indicates Cathode Lead - Available in 12 mm Tape, 5000 Units per 13 inch Reel - Device Meets MSL1 Requirements - ESD Ratings: Machine Model, C (>400 V) - Human Body Model, 3B (>8000 V) - Marking: B1E2 ||**SMA**
**CASE 403D**
B1E2
AYWW
B1E2
= Specific Device Code
A
= Assembly Location**
Y
= Year
WW
= Work Week
= Pb−Free Package
*||| |---|---|---|---| ||(Note: Microdot may be in either location)||| ||**The Assembly Location code (A) is front side|**The Assembly Location code (A) is front side|**The Assembly Location code (A) is front side| ||optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter pin),
the front side assembly code may be blank.||optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter pin),| ||**ORDERING INFORMATION**||| |**Device**
**Package**
**Shipping**†
MBRA120ET3G
SMA
(Pb−Free)
5000 / Tape &
Reel
NRVBA120ET3G*
SMA
(Pb−Free)
5000 / Tape &
Reel
†For information on tape and reel specifications,
~~—~~|||| ||including part orientation and tape sizes, please||| ||refer to our Tape and Reel Packaging Specification||| ||Brochure, BRD8011/D.||| - **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. Publication Order Number: **MBRA120ET3/D** **1** © Semiconductor Components Industries, LLC, 2014 **April, 2017 − Rev. 5** ## **MBRA120E, NRVBA120E** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage|VRRM
VRWM
VR|20|V| |Average Rectified Forward Current
(At Rated VR, TC= 125°C)|IO|1.0|A| |Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|40|A| |Storage Temperature|Tstg|−55 to +150|°C| |Operating Junction Temperature|TJ|−55 to +150|°C| |Voltage Rate of Change
(Rated VR, TJ= 25°C)|dv/dt|10,000|V/�s| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**5 mm x 5 mm**
(Note 2)|**1 Inch** **x 1/2 inch**
(Note 3)|**Unit**| |Thermal Resistance − Junction−to−Lead
Thermal Resistance − Junction−to−Ambient|RθJL
RθJA|34
138|20
77|°C/W| |**ELECTRICAL CHARACTERISTICS**||||| |Maximum Instantaneous Forward Voltage (Note 1), See Figure 2
(IF= 0.1 A)
(IF= 1.0 A)
(IF= 2.0 A)|VF|**TJ = 25**°**C**|**TJ = 100**°**C**|V| |||0.455
0.530
0.595|0.360
0.455
0.540|| |Maximum Instantaneous Reverse Current, See Figure 4
(VR= 20 V)
(VR= 10 V)
(VR= 5.0 V)|IR|**TJ = 25**°**C**|**TJ = 100**°**C**|�A| |||10
1.0
0.5|1600
500
300|| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 250 μ s, Duty Cycle ≤ 2%. 2. Mounted on a Pad Size of 5 mm x 5 mm, PC Board FR4 (2 pads). 3. Mounted on a Pad Size of 1 inch x 1/2 inch, PC Board FR4 (2 pads). **www.onsemi.com** **2** **MBRA120E, NRVBA120E** **==> picture [235 x 175] intentionally omitted <==** **----- Start of picture text -----**
10
150 ° C 125 ° C
100 ° C
25 ° C
1 −40 ° C
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
, INSTANTANEOUS FORWARD CURRENT (A) VF, INSTANTANEOUS VOLTAGE (VOLTS)
IF
**----- End of picture text -----**
**Figure 1. Typical Forward Voltage** **==> picture [233 x 188] intentionally omitted <==** **----- Start of picture text -----**
10
150 ° C
100 ° C
25 ° C
1
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
VF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 2. Maximum Forward Voltage
, INSTANTANEOUS FORWARD CURRENT (A)
IF
**----- End of picture text -----**
**==> picture [491 x 173] intentionally omitted <==** **----- Start of picture text -----**
1E−02 1E−02
150 ° C
1E−03 150 ° C 1E−03
125 ° C 100 ° C
1E−04 100 ° C 1E−04
75 ° C
1E−05 1E−05
1E−06 1E−06
25 ° C
25 ° C
1E−07 1E−07
1E−08 1E−08
0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20
VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)
, REVERSE CURRENT (A) , REVERSE CURRENT (A)
IR IR
**----- End of picture text -----**
**Figure 3. Typical Reverse Current** **Figure 4. Maximum Reverse Current** **www.onsemi.com** **3** **MBRA120E, NRVBA120E** **==> picture [237 x 183] intentionally omitted <==** **----- Start of picture text -----**
0.7
0.6
dc
0.5
SQUARE WAVE
0.4
0.3
0.2
0.1
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
IO, AVERAGE FORWARD CURRENT (AMPS)O, AVERAGE FORWARD CURRENT (AMPS), AVERAGE FORWARD CURRENT (AMPS)
, AVERAGE POWER DISSIPATION (WATTS)
FO
P
**----- End of picture text -----**
**==> picture [490 x 397] intentionally omitted <==** **----- Start of picture text -----**
1.8 0.7
dc
1.6
0.6
1.4 dc
0.5
1.2 SQUARE WAVE
SQUARE WAVE
1 0.4
0.8 0.3
0.6
0.2
0.4
0.1
0.2
0 0
0 20 40 60 80 100 120 140 160 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
TL, LEAD TEMPERATURE ( ° C) IO, AVERAGE FORWARD CURRENT (AMPS)O, AVERAGE FORWARD CURRENT (AMPS), AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating Figure 6. Forward Power Dissipation
1
D = 0.5
0.3
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
T, TIME (sec)
, AVERAGE FORWARD CURRENT (AMPS) , AVERAGE POWER DISSIPATION (WATTS)
IF FO
P
R(T), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
**----- End of picture text -----**
**Figure 7. Thermal Resistance** **==> picture [238 x 174] intentionally omitted <==** **----- Start of picture text -----**
1000
TJ = 25 ° C
100
10
0 2 4 6 8 10 12 14 16 18 20
VR, REVERSE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
**----- End of picture text -----**
**Figure 8. Typical Junction Capacitance** **www.onsemi.com** **4** **MBRA120E, NRVBA120E** ## **PACKAGE DIMENSIONS** **SMA** CASE 403D ISSUE H **==> picture [355 x 387] intentionally omitted <==** **----- Start of picture text -----**
HE
NOTES:
1.
E 1982.
2.
3.
=
DIM MIN NOM
b D A 1.97 2.10
A1 0.05 0.10
b 1.27 1.45
c 0.15 0.28
ja: POLARITY INDICATOR D 2.29 2.60
OPTIONAL AS NEEDED bay E 4.06 4.32
(SEE STYLES) H E 4.83 5.21
L 0.76 1.14
A
A1
=, L c =n
SOLDERING FOOTPRINT*
4.000
0.157
2.000
0.079
ot
oe
2.000
an
0.079
SCALE 8:1 mm
(—) inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
**----- End of picture text -----**
**==> picture [199 x 111] intentionally omitted <==** **----- Start of picture text -----**
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L.
MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
A 1.97 2.10 2.20 0.078 0.083 0.087
A1 0.05 0.10 0.20 0.002 0.004 0.008
b 1.27 1.45 1.63 0.050 0.057 0.064
c 0.15 0.28 0.41 0.006 0.011 0.016
D 2.29 2.60 2.92 0.090 0.103 0.115
S=SSaa E 4.06 4.32 4.57 0.160 0.170 = 0.180
H E 4.83 5.21 5.59 0.190 0.205 0.220
L 0.76 1.14 1.52 0.030 0.045 0.060
**----- End of picture text -----**
**==> picture [126 x 131] intentionally omitted <==** **----- Start of picture text -----**
4.000
0.157
2.000
0.079
ot
oe
2.000
an
0.079
SCALE 8:1 mm
(—) inches
**----- End of picture text -----**
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