# Schottky Rectifier, 100 V, 5 A, Single, DFN, 8 Pins, 730 mV ![Product image](https://novapart.co/image/farnell:2533231RL/) **URL**: https://novapart.co/products/MBR5H100MFST1G/schottky-rectifier-100-v-5-a-single-dfn-8-pins-730 **SKU**: MBR5H100MFST1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes **Price**: €0.3740 **Stock**: 1000+ **Lead Time**: 71 days (indicative) ## Description Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):5A; Diode Configuration:Single; Diode Case Style:SOIC; No. of Pins:8Pins; Forward Voltage VF Max:730mV; Forward Surge Curren ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 8Pins | | Product Range | MBR5H | | Qualification | AEC-Q101 | | Diode Mounting | Surface Mount | | Diode Case Style | DFN | | Diode Configuration | Single | | Forward Voltage Max | 730mV | | Forward Surge Current | 200A | | Average Forward Current | 5A | | Operating Temperature Max | 175°C | | Repetitive Peak Reverse Voltage | 100V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2533231RL/) ## MBR5H100MFS, NRVB5H100MFS ## 5A, 100V SWITCHMODE Power Rectifier These state−of−the−art devices have the following features: ## **Features** ## **http://onsemi.com** - Low Power Loss / High Efficiency - New Package Provides Capability of Inspection and Probe After Board Mounting - Guardring for Stress Protection - Low Forward Voltage Drop - 175°C Operating Junction Temperature - NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These are Pb−Free Devices ## **Mechanical Characteristics:** - Case: Epoxy, Molded - Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. - Lead Finish: 100% Matte Sn (Tin) - Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds - Device Meets MSL 1 Requirements ## **MAXIMUM RATINGS** ~~ee~~ **Rating Symbol Value** ~~ee~~ **Unit** Peak Repetitive Reverse Voltage VRRM V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR 100 ~~a~~ Average Rectified Forward Current IF(AV) 5 A (Rated VR, TC = 150 ° C) ~~rr~~ Peak Repetitive Forward Current, I ~~ee~~ FRM 10 A (Rated VR, Square Wave, 20 kHz, TC = 150 ° C) ~~Er~~ Non−Repetitive Peak Surge Current IFSM 200 A (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) ~~tft~~ Storage Temperature Range Tstg −65 to +175 ° C Operating Junction Temperature TJ −55 to +175 ° C ~~ee ee~~ Voltage Rate of Change dv/dt 10,000 V/ s (Rated VR) ~~ee~~ Unclamped Inductive Switching ~~ee~~ EAS ~~eee~~ 100 mJ Energy (10 mH Inductor, Non−repetitive) ESD Rating (Human Body Model) 3B ~~| ee~~ ESD Rating (Machine Model) ~~es|~~ C ~~ft~~ Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. **SCHOTTKY BARRIER RECTIFIERS 5 AMPERES 100 VOLTS** **==> picture [181 x 165] intentionally omitted <==** **----- Start of picture text -----**
1,2,3 5,6
MARKING
DIAGRAM
A C
1 A B5H100
AYWZZ
SO−8 FLAT LEAD A
CASE 488AA Not Used C
STYLE 2
B5H100 = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
**----- End of picture text -----**
## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |MBR5H100MFST1G|SO−8 FL
(Pb−Free)|1500 /
Tape & Reel| |MBR5H100MFST3G|SO−8 FL
(Pb−Free)|5000 /
Tape & Reel| |NRVB5H100MFST1G|SO−8 FL
(Pb−Free)|1500 /
Tape & Reel| |NRVB5H100MFST3G|SO−8 FL
(Pb−Free)|5000 /
Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: **MBR5H100MFS/D** **1** © Semiconductor Components Industries, LLC, 2012 **May, 2012 − Rev. 4** **MBR5H100MFS, NRVB5H100MFS** ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Typ**|**Max**|**Unit**| |Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm21 oz. copper bond pad, on a FR4 board)|RθJC|−|2.4|°C/W| |**ELECTRICAL CHARACTERISTICS**||||| |Instantaneous Forward Voltage (Note 1)
(iF= 5 Amps, TJ= 125°C)
(iF= 5 Amps, TJ= 25°C)|vF|0.56
0.6|0.6
0.73|V| |Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ= 125°C)
(Rated dc Voltage, TJ= 25°C)|iR|3
0.003|13
0.1|mA| 1. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. **http://onsemi.com** **2** **MBR5H100MFS, NRVB5H100MFS** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 593] intentionally omitted <==** **----- Start of picture text -----**
150 ° C 175 ° C 25 ° C −40 ° C 175 ° C −40 ° C
125 ° C
10 10
1 1
25 ° C
125 ° C
0.1 0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward Figure 2. Maximum Instantaneous Forward
Characteristics Characteristics
1.E+00 1.E+00
1.E−01 175 ° C 1.E−01 175 ° C
1.E−02
150 ° C 1.E−02 150 ° C
1.E−03
125 ° C 125 ° C
1.E−04 1.E−03
1.E−05 1.E−04
25 ° C
1.E−06 25 ° C 1.E−05
1.E−07
1.E−06 −40 ° C
1.E−08
1.E−09 −40 ° C 1.E−07
1.E−10 1.E−08
0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90 100
VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
Characteristics Characteristics
10,000 300
280 Single pulse non−repetitive square
wave 25 ° C ambient
260 Mounted on a minimum pad, FR4
1000 board, 1 oz. copper pour
240
220
200
100
180
160
10 140
0 10 20 30 40 50 60 70 80 90 100 0 1.0 2.0 3.0 4.0
VR, REVERSE VOLTAGE (V) PULSE DURATION (ms)
CURRENT (A) CURRENT (A)
, INSTANTANEOUS FORWARD , INSTANTANEOUS FORWARD
IF IF
, INSTANTANEOUS REVERSE CURRENT (A) , INSTANTANEOUS REVERSE CURRENT (A)
IR IR
, JUNCTION CAPACITANCE (pF)
J
C
MAXIMUM FORWARD SURGE CURRENT (A)
**----- End of picture text -----**
**Figure 5. Typical Junction Capacitance** **Figure 6. Forward Surge Safe Operating Area** **http://onsemi.com** **3** **MBR5H100MFS, NRVB5H100MFS** ## **TYPICAL CHARACTERISTICS** **==> picture [490 x 591] intentionally omitted <==** **----- Start of picture text -----**
9 6
8
5
7
DC DC
Square
6 4
Wave
5 Square
3 Wave
4
3 2
21 R � JC = 1 ° C/W 1 R � JA = 49 ° C/W
0 0
150 155 160 165 170 175 0 20 40 60 80 100 120 140 160 180
TC, CASE TEMPERATURE ( ° C) TA, AMBIENT TEMPERATURE ( ° C)
Figure 7. Forward Current Derating Over Case Figure 8. Forward Current Derating Over
Temperature Ambient Temperature
3 140
TJ = 175 ° C Assumes 25 ° C
120
Ambient Temperature
100
2
Square 80
Wave 1 oz. Copper PCB
DC 60
1 2 oz. Copper PCB
40
20
0 0
0 1 2 3 4 5 0 100 200 300 400 500 600 700
IF, AVERAGE RECTIFIED FORWARD CURRENT (A) COPPER HEAT SPREADER AREA (mm [2] )
Figure 9. Maximum Forward Power Figure 10. Steady State Junction to Ambient
Dissipation Thermal Resistance
10
Assumes 25 ° C ambient and soldered
to a 600 mm [2] − 1 oz copper pad on PCB
50% Duty Cycle
1
20%
10%
5%
0.1
2%
1%
Single Pulse
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (sec)
CURRENT (A) CURRENT (A)
, AVERAGE RECTIFIED FORWARD , AVERAGE RECTIFIED FORWARD
IF IF
C/W)
°
(
JA
�
DISSIPATION (W)
, AVERAGE FORWARD POWER
D
P
C/W)
°
R(t) (
**----- End of picture text -----**
**Figure 11. Transient Thermal Response, Junction to Case** **http://onsemi.com** **4** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [482 x 619] intentionally omitted <==** **----- Start of picture text -----**
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
+
1 ISSUE N
SCALE 2:1 DATE 25 JUN 2018
2 X NOTES:
1. DIMENSIONING AND TOLERANCING PER
0.20 C ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
D = A o 3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
2 B 2 X BURRS.
D1 MILLIMETERS
0.20 C
DIM MIN NOM MAX
fet = A 0.90 1.00 1.10
A1 0.00 −−− 0.05
E1 4 X b 0.33 0.41 0.51
c 0.23 0.28 0.33
E D 5.00 5.15 5.30
2 D1 4.70 4.90 5.10
c D2 3.80 4.00 4.20
A1 E 6.00 6.15 6.30
E1 5.70 5.90 6.10
1 2 3 4 E2 3.45 3.65 3.85
e 1.27 BSC
TOP VIEW G 0.51 0.575 0.71
C K 1.20 1.35 1.50
SEATING L 0.51 0.575 0.71
0.10 C DETAIL A PLANE L1 0.125 REF
M 3.00 3.40 3.80
~. | A —— 0 −−− 12
0.10 C GENERIC
Sy SIDE VIEW SS MARKING DIAGRAM*
DETAIL A
1
8X b XXXXXX
0.10 C A B e/2 AYWZZ
0.05 c
L e
1 4 XXXXXX = Specific Device Code
P o {IF S
K A = Assembly Location
Y = Year
RECOMMENDED W = Work Week
E2 SOLDERING FOOTPRINT* ZZ = Lot Traceability
(EXPOSED PAD)PIN 5 L1 M 0.4952X 4.560 *This information is generic. Please refer to
2X device data sheet for actual part marking.
a
1.530 Pb−Free indicator, “G” or microdot “ ”,
G = D2 2X may not follow the Generic Marking.may or may not be present. Some products
BOTTOM VIEW 0.475
an 7a 3.200 |
4.530
| |
STYLE 1: STYLE 2: 2X 1.330
PIN 1. 2. SOURCESOURCE PIN 1. 2. ANODEANODE 0.905
3. SOURCE 3. ANODE 1
4. GATE 4. NO CONNECT
5. DRAIN 5. CATHODE 0.965
“ 4X g o l a
1.000 1.270
4X 0.750 one PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON14036D Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: DFN5 5x6, 1.27P (SO−8FL) PAGE 1 OF 1
**----- End of picture text -----**
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