# Schottky Rectifier, 100 V, 5 A, Single, DFN, 5 Pins, 980 mV ![Product image](https://novapart.co/image/farnell:3606388/) **URL**: https://novapart.co/products/MBR5100MFST3G/schottky-rectifier-100-v-5-a-single-dfn-pins-980 **SKU**: MBR5100MFST3G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes **Price**: €0.1360 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (15-Jan-2018) | | No. Of Pins | 5Pins | | Product Range | - | | Qualification | - | | Diode Mounting | Surface Mount | | Diode Case Style | DFN | | Diode Configuration | Single | | Forward Voltage Max | 980mV | | Forward Surge Current | 75A | | Average Forward Current | 5A | | Operating Temperature Max | 175°C | | Repetitive Peak Reverse Voltage | 100V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3606388/) **Share Feedback DATA SHEET** Your Opinion Matters **www.onsemi.com** ~~oe~~ ## Switch-mode Power Rectifiers ## MBR5100MFS, NRVB5100MFS ## **SCHOTTKY BARRIER RECTIFIERS 5 AMPERES 100 VOLTS** 1,2,3 5,6 ## **Features** - Low Power Loss / High Efficiency - New Package Provides Capability of Inspection and Probe After Board Mounting - Guardring for Stress Protection - Low Forward Voltage Drop - 175°C Operating Junction Temperature - NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These are Pb−Free Devices **==> picture [181 x 136] intentionally omitted <==** **----- Start of picture text -----**
MARKING
DIAGRAM
A C
°
1 A B5100
AYWZZ
SO−8 FLAT LEAD A
CASE 488AA Not Used C
STYLE 2
B5100 = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
**----- End of picture text -----**
## **Mechanical Characteristics:** - Case: Epoxy, Molded - Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. - Lead Finish: 100% Matte Sn (Tin) - Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds - Device Meets MSL 1 Requirements ## **MAXIMUM RATINGS** |**Rating**|**Symbol**|**Value**|**Unit**| |---|---|---|---| |Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage|VRRM
VRWM
VR|100|V| |Average Rectified Forward Current
(Rated VR, TC= 165°C)|IF(AV)|5|A| |Peak Repetitive Forward Current,
(Rated VR, Square Wave,
20 kHz, TC= 160°C)|IFRM|10|A| |Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)|IFSM|75|A| |Storage Temperature Range|Tstg|−65 to +175|°C| |Operating Junction Temperature|TJ|−55 to +175|°C| |Unclamped Inductive Switching
Energy (10 mH Inductor,
Non−repetitive)|EAS|75|mJ| |ESD Rating (Human Body Model)||3B|| |ESD Rating (Machine Model)||M4|| ## **ORDERING INFORMATION** **Device Package Shipping** † NRVB5100MFST1G SO−8 FL 1500 / (Pb−Free) Tape & Reel ~~es~~ ## **DISCONTINUED** (Note 1) |**DISCONTINUED**(Note 1)|(Note 1)|| |---|---|---| |MBR5100MFST1G|SO−8 FL
(Pb−Free)|1500 /
Tape & Reel| |MBR5100MFST3G|SO−8 FL
(Pb−Free)|5000 /
Tape & Reel| |NRVB5100MFST3G|SO−8 FL
(Pb−Free)|5000 /
Tape & Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1. **DISCONTINUED:** These devices are not recommended for new design. Please contact your **onsemi** representative for information. The most current information on these devices may be available on www.onsemi.com. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Publication Order Number: **MBR5100MFS/D** **1** © Semiconductor Components Industries, LLC, 2013 **June, 2024 − Rev. 1** **MBR5100MFS, NRVB5100MFS** ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Typ**|**Max**|**Unit**| |Thermal Resistance, Junction−to−Case, Steady State|RθJC|−|2.4|°C/W| |(Assumes 600 mm21 oz. copper bond pad, on a FR4 board)||||| |**ELECTRICAL CHARACTERISTICS**||||| |Instantaneous Forward Voltage (Note 1)|vF|||V| |(iF= 5 Amps, TJ= 125°C)||0.64|0.94|| |(iF= 5 Amps, TJ= 25°C)||0.76|0.98|| |Instantaneous Reverse Current (Note 1)|iR|||mA| |(Rated dc Voltage, TJ= 125°C)||2|10|| |(Rated dc Voltage, TJ= 25°C)||0.003|0.01|| 1. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2.0%. **www.onsemi.com** **Share Feedback** Your Opinion Matters **2** **MBR5100MFS, NRVB5100MFS** ## **TYPICAL CHARACTERISTICS** **==> picture [490 x 591] intentionally omitted <==** **----- Start of picture text -----**
100 100
TA = 175 ° C
ee es
T A = 175 ° C
10 | | | | | ey 10 | | | | | |ee
pT TA = 125 4 ° C Aff ln | | | pT TA = 125 ° C 71 ZA JA! AX
T A = 150 ° C T A = 150 ° C
1 1
tt EF NAO
TA = 25 ° C TA = 25 ° C
TA = −40 ° C T A = −40 ° C
0.1 4/2TAT eeSS] 0.1 w/eEAE -
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward Figure 2. Maximum Instantaneous Forward
Characteristics Characteristics
1.E+00 1.E+00
1.E−01 TA = 175 ° C 1.E−01 TA = 175 ° C
——_——<$——$
1.E−02 = = ES 1.E−02 ee
1.E−03 SS =
1.E−04 TA = 125 ° C 1.E−03 TA = 125 ° C
1.E−05 ———————O_O TA = 150 ° C TA = 25 ° C 1.E−04 SSS TA = 150 ° C ESC
1.E−06
1.E−05 TA = 25 ° C
1.E−07 == TA = −40 ° C ———_ I
a 1.E−06 ————
1.E−08
[$e 1.E−07 — TA = −40 ° C
1.E−09 a
1.E−10 _————— 1.E−08 SStt —t
0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90 100
VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics
1000 10
== TJ = 25 ° C 9 R JC = 2.4 ° C/W
DC
8
eee 7
\ | | | | | | | | | andl
6 Square Wave
Ne
100 5
——————————
4
3
PS es
Seeeseeees ETT
2
1
10 FERRER 0 EREEEREEEEE
Oe
0 10 20 30 40 50 60 70 80 90 100 60 80 100 120 140 160
VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE ( ° C)
CURRENT (A) CURRENT (A)
, INSTANTANEOUS FORWARD , INSTANTANEOUS FORWARD
iF iF
, INSTANTANEOUS REVERSE CURRENT (A) , INSTANTANEOUS REVERSE CURRENT (A)
IR IR
C, JUNCTION CAPACITANCE (pF) , AVERAGE FORWARD CURRENT (A)
IF(AV)
**----- End of picture text -----**
**Figure 5. Typical Junction Capacitance** **Figure 6. Current Derating TO−220AB** **www.onsemi.com** **Share Feedback** Your Opinion Matters **3** **MBR5100MFS, NRVB5100MFS** ## **TYPICAL CHARACTERISTICS** **==> picture [240 x 174] intentionally omitted <==** **----- Start of picture text -----**
8
IPK/IAV = 20 IPK/IAV = 10 | TJ = 175 ° C
7 =eSaES =nA se|
a
eS OS [ES] | [A]
6
Ef
ee6 eee 2 |
5 Sea——_———A|A2 eeaey AA || es IPK/IAV = 5 TE
4 SSa SSES"|A 6 |
Se SS A A |
SySy esa|
3 SEEE [A] eeeesseeeeee eee eeee. Square Wave
2 SyEEeya eeee.aa eeeaas esee |—|
ee ee ee es ee DC
1 feSSee Seaeeeeeeeee —eeeeeeeeeeeee
Seaa aeeaaa eee
SS
0 _——< a
0 1 2 3 4
IF(AV), AVERAGE FORWARD CURRENT (A)
ER DISSIPATION (W)
, AVERAGE FORWARD POW-
F(AV)
P
**----- End of picture text -----**
**Figure 7. Forward Power Dissipation** **==> picture [488 x 172] intentionally omitted <==** **----- Start of picture text -----**
100
50% Duty Cycle
SSA
een 20% oc————_c
10 er 10% pro | tT TT IT |
Wl 5% = 22S SSS SS SSSS. =...eo | | lll LL= 22 meeee e
ari 2% ei — oc
1 Sr 1% er Assumes 25 ° C ambient and soldered to mail
peer eee ee ere eee ee a 600 mm [2] − oz copper pad on PCB Pr
i Cot
0.1 a eesST
SSae
a cs0
|
ee ee
0.01 Pet
Single Pulse A OO BB a 0
a
0.001 LT TTTPTT
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (sec)
C/W)
°
R(t) (
**----- End of picture text -----**
**Figure 8. Thermal Characteristics** ~~a ,~~ **www.onsemi.com** **Share Feedback** Your Opinion Matters **4** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [493 x 621] intentionally omitted <==** **----- Start of picture text -----**
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
1 ISSUE N
SCALE 2:1 DATE 25 JUN 2018
2 X NOTES:
1. DIMENSIONING AND TOLERANCING PER
0.20 C ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
D A 3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
2 B 2 X BURRS.
D1 MILLIMETERS
0.20 C
DIM MIN NOM MAX
A 0.90 1.00 1.10
A1 0.00 −−− 0.05
E1 4 X b 0.33 0.41 0.51
� c 0.23 0.28 0.33
E D 5.00 5.15 5.30
2 D1 4.70 4.90 5.10
c D2 3.80 4.00 4.20
A1 E 6.00 6.15 6.30
E1 5.70 5.90 6.10
1 2 3 4 E2 3.45 3.65 3.85
e 1.27 BSC
TOP VIEW G 0.51 0.575 0.71
C K 1.20 1.35 1.50
SEATING L 0.51 0.575 0.71
0.10 C DETAIL A PLANE L1 0.125 REF
M 3.00 3.40 3.80
A � 0 � −−− 12 �
0.10 C GENERIC
SIDE VIEW MARKING DIAGRAM*
DETAIL A
1
8X b XXXXXX
0.10 C A B e/2 AYWZZ
0.05 c
L e
1 4 XXXXXX = Specific Device Code
K A = Assembly Location
Y = Year
RECOMMENDED W = Work Week
E2 SOLDERING FOOTPRINT* ZZ = Lot Traceability
(EXPOSED PAD)PIN 5 L1 M 0.4952X 4.560 *This information is generic. Please refer to
2X device data sheet for actual part marking.
1.530 Pb−Free indicator, “G” or microdot “ � ”,
may or may not be present. Some products
G D2 2X may not follow the Generic Marking.
BOTTOM VIEW 0.475
3.200
4.530
STYLE 1: STYLE 2: 2X 1.330
PIN 1. 2. SOURCESOURCE PIN 1. 2. ANODEANODE 0.905
3. SOURCE 3. ANODE 1
4. GATE 4. NO CONNECT
5. DRAIN 5. CATHODE 0.965
4X
1.000 1.270
4X 0.750 PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the onsemi Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON14036D Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: DFN5 5x6, 1.27P (SO−8FL) PAGE 1 OF 1
**----- End of picture text -----**
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