# Schottky Rectifier, General Purpose, 100 V, 3 A, Single, DO-201AD, 2 Pins, 790 mV ![Product image](https://novapart.co/image/farnell:1459058/) **URL**: https://novapart.co/products/MBR3100G/schottky-rectifier-general-purpose-100-v-3-a **SKU**: MBR3100G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes **Price**: €0.3090 **Stock**: 10+ ## Description Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):3A; Diode Configuration:Single; Diode Case Style:DO-201AD; No. of Pins:2Pins; Forward Voltage VF Max:790mV; Forward Surge Cu ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 2Pins | | Product Range | MBR31 | | Qualification | - | | Diode Mounting | Through Hole | | Diode Case Style | DO-201AD | | Diode Configuration | Single | | Forward Voltage Max | 790mV | | Forward Surge Current | 150A | | Average Forward Current | 3A | | Operating Temperature Max | 175°C | | Repetitive Peak Reverse Voltage | 100V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:1459058/) **Preferred Device** ## MBR3100 ## Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. ## **Features** - Low Reverse Current - Low Stored Charge, Majority Carrier Conduction ## **http://onsemi.com** ## **SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES, 100 VOLTS** - Low Power Loss/High Efficiency - Highly Stable Oxide Passivated Junction - Guard−ring for Stress Protection - Low Forward Voltage - 175°C Operating Junction Temperature - High Surge Capacity - Pb−Free Packages are Available* ## **Mechanical Characteristics:** **==> picture [53 x 37] intentionally omitted <==** **----- Start of picture text -----**
AXIAL LEAD
CASE 267−05
(DO−201AD)
STYLE 1
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- Case: Epoxy, Molded - Weight: 1.1 Gram (Approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable **MARKING DIAGRAM** • Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds A • Polarity: Cathode indicated by Polarity Band MBR 3100 YYWW **MAXIMUM RATINGS Rating Symbol Max Unit** ~~SIL~~ Peak Repetitive Reverse Voltage VRRM 100 V A = Assembly Location Working Peak Reverse Voltage VRWM YY = Year DC Blocking Voltage VR WW = Work Week Average Rectified Forward Current T(R JA = 28 ° C/W, Refer to P.C. Board Mounting,A = 100 ° C IO 3.0 A (Note: Microdot may be in either location)= Pb−Free Package Note 3) **ORDERING INFORMATION** Non−Repetitive Peak Surge Current IFSM 150 A (Surge Applied at Rated Load Conditions **Device Package Shipping**[†] Halfwave, Single Phase, 60 Hz) Operating and Storage Junction Temperature TJ, Tstg −65 to ° C MBR3100 Axial Lead 500 Units / Bag Range (Note 1) (Reverse Voltage Applied) +175 MBR3100G Axial Lead 500 Units / Bag (Pb−Free) Voltage Rate of Change (Rated VR) dv/dt 10 V/ns MBR3100RL Axial Lead 1500/Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended MBR3100RLG Axial Lead 1500/Tape & Reel Operating Conditions is not implied. Extended exposure to stresses above the (Pb−Free) Recommended Operating Conditions may affect device reliability. ~~—— =~~ 1. The heat generated must be less than the thermal conductivity from †For information on tape and reel specifications, Junction−to−Ambient: dPD/dTJ < 1/R JA. including part orientation and tape sizes, please †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. - *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **Preferred** devices are recommended choices for future use and best overall value. Publication Order Number: **MBR3100/D** **1** © Semiconductor Components Industries, LLC, 2006 **June, 2006 − Rev. 6** **MBR3100** ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Max**|**Unit**| |Thermal Resistance, Junction−to−Ambient (see Note 3, Mounting Method 3)|R�JA|28|°C/W| |**ELECTRICAL CHARACTERISTICS**(TL= 25°C unless otherwise noted)|||| |**Characteristic**|**Symbol**|**Max**|**Unit**| |Maximum Instantaneous Forward Voltage (Note 2)
(iF= 3.0 Amps, TL= 25°C)
(iF= 3.0 Amps, TL= 100°C)|vF|0.79
0.69|V| |Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2)
TL= 25°C
TL= 100°C|iR|0.6
20|mA| 2. Pulse Test: Pulse Width = 300 � s, Duty Cycle = 2.0%. **==> picture [236 x 467] intentionally omitted <==** **----- Start of picture text -----**
50
30
20
TJ = 150°C
10
100°C
5
3 25°C
2
1
0.5
0.3
0.2
0.1
0.05
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
8
7
6
5
dc
4
SQUARE
WAVE
3
2
1
0
20 40 60 80 100 120 140 160 180
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Current Derating
(Mounting Method #3 per Note 3)
i , INSTANTANEOUS FORWARD CURRENT (AMPS)F
I , AVERAGE FORWARD CURRENT (AMPS)F (AV)
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1
0.5
0.2 TJ = 150°C
0.1
125°C
0.05
0.02
100°C
0.01
0.005
0.002
0.001
0.0005
25°C
0.0002
0.0001
0 10 20 30 40 50 60 70 80 90 100
VR REVERSE VOLTAGE (VOLTS)
I , REVERSE CURRENT (mA)R
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**Figure 2. Typical Reverse Current*** *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these curves if VR is sufficient below rated VR. **==> picture [238 x 191] intentionally omitted <==** **----- Start of picture text -----**
4
3.5
3
2.5 SQUARE
WAVE
2 dc
1.5
1
0.5
0 1.0 2.0 3.0 4.0 5.0
IF (AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 4. Power Dissipation
P , AVERAGE POWER DISSIPATION (WATTS)F (AV)
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**http://onsemi.com** **2** **MBR3100** **==> picture [233 x 172] intentionally omitted <==** **----- Start of picture text -----**
400
300
200
100 TJ = 25°C
f = 1 MHz
80
50
40
0 20 40 60 80
VR, REVERSE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
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**Figure 5. Typical Capacitance** ## **NOTE 3 — MOUNTING DATA** Data shown for thermal resistance junction−to−ambient (R�JA) for the mountings shown is to be used as typical guideline values for preliminary engineering, or in case the tie point temperature cannot be measured. **TYPICAL VALUES FOR R** � **JA IN STILL AIR** |**C**|**US O** �**JA S**|**US O** �**JA S**|**US O** �**JA S**|**US O** �**JA S**|| |---|---|---|---|---|---| |**Mounting**
**Method**|**Lead Length, L (in)**
**1/8**
**1/4**
**1/2**
**3/4**||||**R**�**JA**| ||**1/8**|**1/4**|**1/2**||| |1|50|51|53|55|°C/W| |2|58|59|61|63|°C/W| |3|28||||°C/W| ## **Mounting Method 2** ## **Mounting Method 1** **==> picture [201 x 74] intentionally omitted <==** **----- Start of picture text -----**
Vector Push−In
Terminals T−28
ÉÉÉÉÉÉÉÉÉÉÉÉÉ L L
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P.C. Board where available copper surface is small. **L L** **==> picture [495 x 270] intentionally omitted <==** **----- Start of picture text -----**
L L
ÉÉÉÉÉÉÉÉÉÉÉÉÉ L L
ÉÉÉÉÉÉÉÉÉÉÉ
Mounting Method 3
P.C. Board with
2−1/2 ″ X 2−1/2 ″
copper surface.
ÉÉ L = 1/2’’
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ Board Ground Plane
ÉÉ
http://onsemi.com
3
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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [410 x 265] intentionally omitted <==** **----- Start of picture text -----**
AXIAL LEAD
CASE 267−05
ISSUE G DATE 06/06/2000
SCALE 1:1 NOTES:
1. DIMENSIONS AND TOLERANCING PER ANSI
K A 2. Y14.5M, 1982.CONTROLLING DIMENSION: INCH.
D + 3. 267-04 OBSOLETE, NEW STANDARD 267-05.
1 2
= INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.287 0.374 7.30 9.50
B [S ibe B 0.189 0.209 4.80 5.30
K D 0.047 0.051 1.20 1.30
rE] BE K 1.000 --- 25.40 E ---
STYLE 1: STYLE 2:
PIN 1. CATHODE (POLARITY BAND) NO POLARITY
2. ANODE
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Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42170B** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: AXIAL LEAD PAGE 1 OF 1** ~~ee~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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