# Schottky Rectifier, 100 V, 30 A, Dual Common Cathode, TO-220, 3 Pins, 930 mV

![Product image](https://novapart.co/image/farnell:1431060/)

**URL**: https://novapart.co/products/MBR30H100CTG/schottky-rectifier-100-v-30-a-dual-common-cathode
**SKU**: MBR30H100CTG
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes
**Price**: €0.7090
**Stock**: 500+
**Lead Time**: 113 days (indicative)

## Description

Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):30A; Diode Configuration:Dual Common Cathode; Diode Case Style:TO-220; No. of Pins:3Pins; Forward Voltage VF Max:930mV;

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | MBR30 |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-220 |
| Diode Configuration | Dual Common Cathode |
| Forward Voltage Max | 930mV |
| Forward Surge Current | 250A |
| Average Forward Current | 30A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 100V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1431060/)

## MBR30H100CTG, MBRF30H100CTG 

## Switch‐mode Power Rectifier 100 V, 30 A 

**www.onsemi.com** 

## **Features and Benefits** 

- Low Forward Voltage: 0.67 V @ 125°C 

- Low Power Loss/High Efficiency 

- High Surge Capacity 

- 175°C Operating Junction Temperature 

**SCHOTTKY BARRIER RECTIFIER 30 AMPERES 100 VOLTS** 

- 30 A Total (15 A Per Diode Leg) 

- These are Pb−Free Devices 

## **Applications** 

**==> picture [79 x 31] intentionally omitted <==**

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1<br>2, 4<br>3 aes<br>**----- End of picture text -----**<br>


- Power Supply − Output Rectification 

- Power Management 

- Instrumentation 

## **Mechanical Characteristics:** 

- Case: Epoxy, Molded 

- Epoxy Meets UL 94 V−0 @ 0.125 in 

- Weight: 1.9 Grams (Approximately) 

- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

- Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 

- ESD Rating: Human Body Model = 3B Machine Model = C 

## **MARKING DIAGRAMS** 

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Sy 4<br>TO−220<br>CASE 221A AYWW<br>STYLE 6 B30H100G<br>AKA<br>1 ' 2<br>3<br>b<br>TO−220 FULLPAK AYWW<br>CASE 221AH B30H100G<br>AKA<br>1<br>2<br>, 3 TN:<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>B30H100 = Device Code<br>G = Pb−Free Package<br>AKA = Polarity Designator<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. 

Publication Order Number: **MBR30H100CT/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **July, 2016 − Rev. 6** 

**MBR30H100CTG, MBRF30H100CTG** 

## **MAXIMUM RATINGS** (Per Diode Leg) 

|**MAXIMUM RATINGS**(Per Diode Leg)||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|100|V|
|Average Rectified Forward Current<br>(TC= 156°C)<br>Per Diode<br>Per Device|IF(AV)|15<br>30|A|
|Peak Repetitive Forward Current<br>(Square Wave, 20 kHz, TC= 151°C)|IFM|30|A|
|Nonrepetitive Peak Surge Current<br>(Surge applied at rated load conditions halfwave, single phase, 60 Hz)|IFSM|250|A|
|Operating Junction Temperature (Note 1)|TJ|+175|°C|
|Storage Temperature|Tstg|�65 to +175|°C|
|Voltage Rate of Change (Rated VR)|dv/dt|10,000|V/�s|
|Controlled Avalanche Energy (see test conditions in Figures 13 and 14)|WAVAL|200|mJ|
|ESD Ratings:<br>Machine Model = C<br>Human Body Model = 3B||> 400<br>> 8000|V|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/R � JA. 

## **THERMAL CHARACTERISTICS** 

|**Characteristic**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Maximum Thermal Resistance<br>(MBR30H100CTG) − Junction-to-Case<br>− Junction-to-Ambient<br>(MBRF30H100CTG) − Junction-to-Case<br>− Junction-to-Ambient|R�JC<br>R�JA<br>R�JC<br>R�JA|2.0<br>60<br>4.2<br>75|°C/W|



## **ELECTRICAL CHARACTERISTICS** (Per Diode Leg) 

|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|
|Maximum Instantaneous Forward Voltage (Note 2)<br>(iF= 15 A, TJ= 25°C)<br>(iF= 15 A, TJ= 125°C)<br>(iF= 30 A, TJ= 25°C)<br>(iF= 30 A, TJ= 125°C)|vF|−<br>−<br>−<br>−|0.76<br>0.64<br>0.88<br>0.76|0.80<br>0.67<br>0.93<br>0.80|V|
|Maximum Instantaneous Reverse Current (Note 2)<br>(Rated DC Voltage, TJ= 125°C)<br>(Rated DC Voltage, TJ= 25°C)|iR|−<br>−|1.1<br>0.0008|6.0<br>0.0045|mA|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Device Order Number**|**Package Type**|**Shipping**†|
|MBR30H100CTG|TO−220<br>(Pb−Free)|50 Units / Rail|
|MBRF30H100CTG|TO−220FP<br>(Pb−Free)|50 Units / Rail|



**www.onsemi.com** 

**2** 

**MBR30H100CTG, MBRF30H100CTG** 

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100 100<br>175°C 175°C<br>10 10<br>°<br>TJ = 150 C TJ = 150°C<br>1.0 125°C 1.0 125°C<br>25°C 25°C<br>0.1 0.1<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1<br>vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)<br>i   , INSTANTANEOUS FORWARD CURRENT (AMPS)F i   , INSTANTANEOUS FORWARD CURRENT (AMPS)F<br>**----- End of picture text -----**<br>


**Figure 1. Typical Forward Voltage** 

**Figure 2. Maximum Forward Voltage** 

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1E−01 1E−01<br>TJ = 150 ° C<br>1E−02 1E−02<br>TJ = 150 ° C<br>1E−03 1E−03 TJ = 125 ° C<br>TJ = 125 ° C<br>1E−04 1E−04<br>1E−05 1E−05<br>TJ = 25 ° C<br>1E−06 TJ = 25 ° C 1E−06<br>1E−07 1E−07<br>1E−08 1E−08<br>0 20 40 60 80 100 0 20 40 60 80 100<br>VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current<br>26 26<br>24 dc 24 RATED VOLTAGE APPLIED<br>22 22  R�JA = 16° C/W<br>20 20  R �JA  = 60° C/W<br>18 SQUARE WAVE 18 (NO HEATSINK)<br>16 16<br>14 14<br>12 12 dc<br>10 10<br>SQUARE WAVE<br>8.0 8.0<br>6.0 6.0<br>dc<br>4.0 4.0<br>2.0 2.0<br>0 0<br>130 135 140 145 150 155 160 165 170 175 180 0 25 50 75 100 125 150 175<br>TC, CASE TEMPERATURE (C°) TA, AMBIENT TEMPERATURE (°C)<br>, REVERSE CURRENT (AMPS)<br>IR<br>, MAXIMUM REVERSE CURRENT (AMPS)<br>IR<br>I           , AVERAGE FORWARD CURRENT (AMPS)F (AV) I           , AVERAGE FORWARD CURRENT (AMPS)F (AV)<br>**----- End of picture text -----**<br>


**Figure 5. Current Derating, Case Per Leg** 

**Figure 6. Current Derating, Ambient Per Leg** 

**www.onsemi.com** 

**3** 

**MBR30H100CTG, MBRF30H100CTG** 

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30 10000<br>2826 TJ = 175°C TJ = 25 ° C<br>SQUARE WAVE<br>24<br>22<br>20 1000<br>18<br>16 dc<br>14<br>12<br>10 100<br>8<br>6<br>4<br>2<br>0 10<br>0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 20 40 60 80 100<br>IF(AV), AVERAGE FORWARD CURRENT (AMPS) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 7. Forward Power Dissipation Figure 8. Capacitance<br>100<br>D = 0.5<br>10<br>0.2<br>0.1<br>0.05<br>1<br>0.01 P(pk)<br>0.1 t 1<br>t2<br>SINGLE PULSE DUTY CYCLE, D = t 1 /t 2<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, TIME (sec)<br>Figure 9. Thermal Response Junction−to−Ambient for MBR30H100CT<br>10<br>D = 0.5<br>1<br>0.2<br>0.1<br>0.05<br>P(pk)<br>0.1<br>0.01 t1<br>t 2<br>SINGLE PULSE DUTY CYCLE, D = t1/t2<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, TIME (sec)<br>C, CAPACITANCE (pF)<br>P         , AVERAGE FORWARD POWER DISSIPATION (WATTS)F (AV)<br>R(t), TRANSIENT THERMAL RESISTANCE<br>R(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


**Figure 10. Thermal Response Junction−to−Case for MBR30H100CT** 

**www.onsemi.com** 

**4** 

**MBR30H100CTG, MBRF30H100CTG** 

**==> picture [489 x 177] intentionally omitted <==**

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10<br>D = 0.5<br>0.2<br>1.0<br>0.1<br>0.05<br>0.02<br>0.1 P(pk) Z�JC(t) = r(t) R�JC<br>0.01 R�JC = 1.6°C/W MAX<br>D CURVES APPLY FOR POWER<br>PULSE TRAIN SHOWN<br>0.01 SINGLE PULSE t1 t2 READ TIME AT t1<br>DUTY CYCLE, D = t 1 /t 2 TJ(pk) - TC = P(pk) Z�JC(t)<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>t1, TIME (sec)<br>R(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


**Figure 11. Thermal Response Junction−to−Case for MBRF30H100CT** 

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**----- Start of picture text -----**<br>
100<br>D = 0.5<br>0.2<br>10 0.1<br>0.05<br>0.02<br>1.0<br>0.01<br>P (pk) Z�JC(t) = r(t) R�JC<br>0.1 R�JC = 1.6°C/W MAX<br>D CURVES APPLY FOR POWER<br>PULSE TRAIN SHOWN<br>0.01 SINGLE PULSE t1 t2 READ TIME AT t1<br>DUTY CYCLE, D = t1/t2 T J(pk)  - T C  = P (pk)  Z� JC (t)<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>t1, TIME (sec)<br>R(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


**Figure 12. Thermal Response Junction−to−Ambient for MBRF30H100CT** 

**www.onsemi.com** 

**5** 

**MBR30H100CTG, MBRF30H100CTG** 

**==> picture [218 x 169] intentionally omitted <==**

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+VDD<br>IL 10 mH COIL<br>VD<br>MERCURY ID<br>SWITCH<br>DUT<br>S1<br>**----- End of picture text -----**<br>


**Figure 13. Test Circuit** 

The unclamped inductive switching circuit shown in Figure 13 was used to demonstrate the controlled avalanche capability of this device. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. 

When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. 

By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive 

**==> picture [217 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
BVDUT<br>IL ID<br>VDD<br>t0 t1 t2 t<br>**----- End of picture text -----**<br>


**Figure 14. Current−Voltage Waveforms** 

elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). 

## **EQUATION (1):** 

**==> picture [144 x 30] intentionally omitted <==**

## **EQUATION (2):** 

**==> picture [79 x 19] intentionally omitted <==**

**www.onsemi.com** 

**6** 

**MBR30H100CTG, MBRF30H100CTG** 

## **PACKAGE DIMENSIONS** 

**TO−220** CASE 221A−09 ISSUE AH 

NOTES: 

**==> picture [234 x 185] intentionally omitted <==**

**----- Start of picture text -----**<br>
SEATING<br>−T− PLANE<br>B F C<br>T S<br>4<br>Q A<br>1 2 3 U<br>H<br>K<br>Z<br>L R<br>V J<br>G<br>D<br>N<br>**----- End of picture text -----**<br>


1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 

2. CONTROLLING DIMENSION: INCH. 

3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. 

|**DIM**|**INCHES**|**INCHES**|**MILLIMETERS**|**MILLIMETERS**|
|---|---|---|---|---|
||**MIN**<br>|**MAX**<br>|**MIN**<br>|**MAX**<br>|
|**A**|0.570|0.620|14.48|15.75|
|**B**|0380|0415|966|1053|
|**C**|.<br>0.160|.<br>0.190|.<br>4.07|.<br>4.83|
|**D**|0.025|0.038|0.64|0.96|
|**F**|0.142|0.161|3.61|4.09|
|**G**|0.095|0.105|2.42|2.66|
|**H**|0.110|0.161|2.80|4.10|
|**J**|0.014|0.024|0.36|0.61|
|**K**|0.500|0.562|12.70|14.27|
|**L**|0.045|0.060|1.15|1.52|
|**N**|0.190|0.210|4.83|5.33|
|**Q**|0100|0120|254|304|
|**R**|.<br>0.080|.<br>0.110|.<br>2.04|.<br>2.79|
|**S**|0.045|0.055|1.15|1.39|
|**T**|0.235|0.255|5.97|6.47|
|**U**|0.000|0.050|0.00|1.27|
|**V**|0.045|---|1.15|---|
|**Z**|---|0.080|---|2.04|
|STYLE<br>PIN|6:<br>1.<br>ANODE<br>2.<br>CATHODE<br>3.<br>ANODE<br>4.<br>CATHODE||||



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**7** 

**MBR30H100CTG, MBRF30H100CTG** 

## **PACKAGE DIMENSIONS** 

**TO−220 FULLPACK, 3−LEAD** CASE 221AH ISSUE F 

**==> picture [444 x 211] intentionally omitted <==**

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A B SEATINGPLANE NOTES:1. DIMENSIONING AND TOLERANCING PER ASME<br>E Y14.5M, 1994.<br>E/2 P A 2. CONTROLLING DIMENSION: MILLIMETERS.<br>0.14 M B A M H1 A1 3.4. CONTOUR UNCONTROLLED IN THIS AREA.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE<br>PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO<br>EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE<br>Q MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY.<br>D C 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION.<br>LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00.<br>1 2 3 NOTE 3 6. CONTOURS AND FEATURES OF THE MOLDED PACKAGE BODY<br>MAY VARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1<br>AND H1 FOR MANUFACTURING PURPOSES.<br>L L1 MILLIMETERS<br>DIM MIN MAX<br>A 4.30 4.70<br>A1 2.50 2.90<br>+ Le 3X b c —>| A2 2.50 2.90<br>3X b2 0.25 M B A M C A2 b2b 0.541.10 0.841.40<br>c 0.49 0.79<br>e SIDE VIEW D 14.70 15.30<br>FRONT VIEW E 9.70 10.30<br>e 2.54 BSC<br>H1 6.60 7.10<br>L 12.50 14.73<br>L1 --- 2.80<br>P 3.00 3.40<br>SECTION D−D Q 2.80 3.20<br>**----- End of picture text -----**<br>


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A<br>NOTE 6<br>NOTE 6<br>H1<br>D D<br>A SECTION A−A<br>ALTERNATE CONSTRUCTION<br>**----- End of picture text -----**<br>


ON Semiconductor and the         are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf.  SCILLC reserves the right to make changes without further notice to any products herein.  SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.  All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.  SCILLC does not convey any license under its patent rights nor the rights of others.  SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.  Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.  SCILLC is an Equal Opportunity/Affirmative Action Employer.  This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative 

## **LITERATURE FULFILLMENT** : 

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**MBR30H100CT/D** 

**8** 



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