# Schottky Rectifier, 200 V, 2 A, Single, SOD-123FL, 2 Pins, 940 mV

![Product image](https://novapart.co/image/farnell:2985319/)

**URL**: https://novapart.co/products/MBR2H200SFT1G/schottky-rectifier-200-v-2-a-single-sod-123fl-pins
**SKU**: MBR2H200SFT1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes
**Price**: €0.1430
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Description

Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):2A; Diode Configuration:Single; Diode Case Style:SOD-123FL; No. of Pins:2Pins; Forward Voltage VF Max:940mV; Forward

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 2Pins |
| Product Range | MBR2H |
| Qualification | - |
| Diode Mounting | Surface Mount |
| Diode Case Style | SOD-123FL |
| Diode Configuration | Single |
| Forward Voltage Max | 940mV |
| Forward Surge Current | 30A |
| Average Forward Current | 2A |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 200V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2985319/)

## MBR2H200SF 

## Surface Mount Schottky Power Rectifier **Plastic SOD−123FL Package** 

This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical. 

**www.onsemi.com** 

**SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES 200 VOLTS** 

## **Features** 

- Guardring for Stress Protection 

- Low Forward Voltage 

- Epoxy Meets UL 94 V−0 

**SOD−123FL CASE 498** 

- Package Designed for Optimal Automated Board Assembly 

- These are Pb−Free Devices 

## **MARKING DIAGRAM** 

## **Mechanical Characteristics** 

- Reel Options: MBR2H200SFT3G = 10,000 per 13 in reel/8 mm tape 

- Device Marking: L2J 

- Polarity Designator: Cathode Band 

- Weight: 11.7 mg (approximately) 

- Case: Epoxy, Molded 

- Lead Finish: 100% Matte Sn (Tin) 

L2JM (t L2J = Specific Device Code M = Date Code = Pb−Free Package 

(Note: Microdot may be in either location) 

- Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 

- Device Meets MSL 1 Requirements 

**ORDERING INFORMATION** 

**Device Package Shipping**[†] MBR2H200SFT1G SOD−123 3000 / Tape & (Pb−Free) Reel MBR2H200SFT3G SOD−123 10000 / Tape & (Pb−Free) Reel ~~=o~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: **MBR2H200SF/D** 

**1** 

© Semiconductor Components Industries, LLC, 2017 **January, 2017 − Rev. 1** 

**MBR2H200SF** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|200|V|
|Average Rectified Forward Current<br>(TL= 108°C)|IO|2.0|A|
|Peak Repetitive Forward Current<br>(Rated VR, Square Wave, 20 kHz, TC= 105°C)|IFRM|4.0|A|
|Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|30|A|
|Storage and Operating Junction Temperature Range (Note 1)|Tstg, TJ|−55 to +150|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R � JA. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Thermal Resistance, Junction−to−Lead (Note 2)|�JCL|23|°C/W|
|Thermal Resistance, Junction−to−Ambient (Note 2)|R�JA|85|°C/W|
|Thermal Resistance, Junction−to−Ambient (Note 3)|R�JA|330|°C/W|
|**ELECTRICAL CHARACTERISTICS**||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Maximum Instantaneous Forward Voltage (Note 4)<br>(IF= 1.0 A, TJ= 25°C)<br>(IF= 2.0 A, TJ= 25°C)<br>(IF= 1.0 A, TJ= 125°C)<br>(IF= 2.0 A, TJ= 125°C)|VF|0.86<br>0.94<br>0.71<br>0.78|V|
|Maximum Instantaneous Reverse Current (Note 4)<br>(Rated dc Voltage, TJ= 25°C)<br>(Rated dc Voltage, TJ= 125°C)|IR|200<br>2|�A<br>mA|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

2. Mounted with 700 mm[2] copper pad size (Approximately 1 in[2] ) 1 oz FR4 Board. 

3. Mounted with pad size approximately 20 mm[2] copper, 1 oz FR4 Board. 

4. Pulse Test: Pulse Width ≤ 380 � s, Duty Cycle ≤ 2.0%. 

**www.onsemi.com** 

**2** 

**MBR2H200SF** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [490 x 591] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 10<br>TL = 150 ° C TL = 25 ° C TL = 150 ° C TL = 25 ° C<br>TL = −55 ° C<br>T L  = 125 ° C T L  = 125 ° C T L  = −55 ° C<br>1 1<br>0.1 0.1<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)<br>Figure 1. Typical Instantaneous Forward Figure 2. Maximum Instantaneous Forward<br>Characteristics Characteristics<br>1.E−03 1.E−01<br>1.E−04 T L  = 150 ° C 1.E−02 TL = 150 ° C<br>1.E−05 TL = 125 ° C 1.E−03 TL = 125 ° C<br>1.E−06 1.E−04<br>1.E−07 1.E−05<br>1.E−08 1.E−06<br>1.E−09 TL = 25 ° C 1.E−07 T L  = 25 ° C<br>1.E−10 1.E−08 TL = −55 ° C<br>TL = −55 ° C<br>1.E−11 1.E−09<br>0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200<br>VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)<br>Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics<br>100 4.0<br>TL = 25 ° C 3.5 R � JL  = 23 ° C/W<br>DC<br>3.0<br>2.5<br>Square Wave<br>10 2.0<br>1.5<br>1.0<br>0.5<br>1 0<br>1 10 100 0 20 40 60 80 100 120 140<br>VR, REVERSE VOLTAGE (V) TL, LEAD TEMPERATURE ( ° C)<br>CURRENT (A) CURRENT (A)<br>, INSTANTANEOUS FORWARD , INSTANTANEOUS FORWARD<br>iF iF<br>, INSTANTANEOUS REVERSE CURRENT (A) , INSTANTANEOUS REVERSE CURRENT (A)<br>IR IR<br>C, JUNCTION CAPACITANCE (pF) , AVERAGE FORWARD CURRENT (A)<br>IF(AV)<br>**----- End of picture text -----**<br>


**Figure 5. Typical Junction Capacitance** 

**Figure 6. Current Derating per Diode** 

**www.onsemi.com** 

**3** 

**MBR2H200SF** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [242 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
5<br>TJ = 150 ° C IPK/IAV = 20<br>4<br>IPK/IAV = 10<br>3<br>IPK/IAV = 5<br>2<br>DC<br>1<br>Square Wave<br>0<br>0 0.5 1.0 1.5 2.0<br>IF(AV), AVERAGE FORWARD CURRENT (A)<br>, AVERAGE FORWARD<br>F(AV) POWER DISSIPATION (W)<br>P<br>**----- End of picture text -----**<br>


**Figure 7. Forward Power Dissipation** 

**==> picture [490 x 394] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>50% (DUTY CYCLE)<br>100 25%<br>10%<br>5.0%<br>10 2.0%<br>1.0%<br>1.0<br>0.1<br>SINGLE PULSE<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>PULSE TIME (s)<br>Figure 8. Thermal Response, Junction−to−Ambient (20 mm [2]  pad)<br>100<br>50% (DUTY CYCLE)<br>25%<br>10 10%<br>5.0%<br>2.0%<br>1.0<br>1.0%<br>0.1<br>SINGLE PULSE<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>PULSE TIME (s)<br>R(t) (C/W)<br>R(t) (C/W)<br>**----- End of picture text -----**<br>


**Figure 9. Thermal Response, Junction−to−Ambient (1 in[2] pad)** 

**www.onsemi.com** 

**4** 

**MBR2H200SF** 

## **PACKAGE DIMENSIONS** 

**SOD−123FL** CASE 498 ISSUE D 

**==> picture [212 x 244] intentionally omitted <==**

**----- Start of picture text -----**<br>
E<br>D<br>m 1 a r 2 4<br>A1<br>POLARITY INDICATOR<br>OPTIONAL AS NEEDED A<br>TOP VIEW END VIEW<br>a e<br>oO<br>-— HE + F t c<br>SIDE VIEW<br>2X L<br>. -<br>2X b<br>mo BOTTOM VIEW<br>**----- End of picture text -----**<br>


NOTES: 

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 

2. CONTROLLING DIMENSION: MILLIMETER. 

**==> picture [138 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH.<br>**----- End of picture text -----**<br>


4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP. 

|**DIM**|**MILLIMETERS**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**INCHES**|
|---|---|---|---|---|---|---|
||**MIN**|**NOM**|**MAX**|**MIN**|**NOM**|**MAX**|
|**A**<br>**A1**|0.90<br>0.00|**NOM**<br>0.95<br>0.05|0.98<br>0.10|0.035<br>0.000|0.037<br>0.002<br>**NOM**|0.039<br>0.004|
|**A1**|0.00|0.05|0.10|0.000|0.002|0.004|
|**b**|0.70|0.90|1.10|0.028|0.035|0.043|
|**c**|0.10|0.15|0.20|0.004|0.006|0.008|
|**D**<br>——|1.50<br>——|1.65<br>——|1.80<br>——|0.059<br>——|0.065<br>——|0.071<br>——|
|**E**<br>——|2.50<br>——|2.70<br>——|2.90<br>——|0.098<br>——|0.106<br>——|0.114<br>——|
|**L**<br>——|0.55<br>——|0.75<br>——|0.95<br>——|0.022<br>——|0.030<br>——|0.037<br>——|
|**HE**<br>——|3.40<br>——|3.60<br>——|3.80<br>——|0.134<br>——|0.142<br>——|0.150<br>——|
|——|0°<br>——|−<br>——|8°<br>——|0°<br>——|−<br>——|8°<br>——|



**==> picture [113 x 16] intentionally omitted <==**

**----- Start of picture text -----**<br>
RECOMMENDED<br>SOLDERING FOOTPRINT*<br>**----- End of picture text -----**<br>


**==> picture [226 x 128] intentionally omitted <==**

**----- Start of picture text -----**<br>
4.20<br>2X<br>1.25<br>rt<br>ÉÉÉÉ ÉÉÉÉ<br>2X 1.22<br>ÉÉÉÉ ÉÉÉÉ<br>TE ÉÉÉÉ ÉÉÉÉ<br>ÉÉÉÉ DIMENSIONS: MILLIMETERSÉÉÉÉ<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


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**MBR2H200SF/D** 

**5** 



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