# Schottky Rectifier, 35 V, 25 A, Dual Common Cathode, TO-220AB, 3 Pins, 550 mV

![Product image](https://novapart.co/image/farnell:9557423/)

**URL**: https://novapart.co/products/MBR2535CTLG/schottky-rectifier-35-v-25-a-dual-common-cathode
**SKU**: MBR2535CTLG
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes
**Price**: €0.9130
**Stock**: 100+
**Lead Time**: 78 days (indicative)

## Description

Repetitive Reverse Voltage Vrrm Max:35V; Forward Current If(AV):12.5A; Diode Configuration:Dual Common Cathode; Diode Case Style:TO-220AB; No. of Pins:3Pins; Forward Voltage VF Max:550mV; F

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-220AB |
| Diode Configuration | Dual Common Cathode |
| Forward Voltage Max | 550mV |
| Forward Surge Current | 150A |
| Average Forward Current | 25A |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 35V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9557423/)

## MBR2535CTLG 

## Switch-mode Power Rectifier 

## **Features and Benefits** 

- Low Forward Voltage 

- Low Power Loss/High Efficiency 

- High Surge Capacity 

- 150°C Operating Junction Temperature 

- 25 A Total (12.5 A Per Diode Leg) 

- This Device is Pb−Free and is RoHS Compliant* 

**www.onsemi.com SCHOTTKY BARRIER RECTIFIER 25 AMPERES, 35 VOLTS** 

## **Applications** 

- Power Supply – Output Rectification 

- Power Management 

- Instrumentation 

## **Mechanical Characteristics** 

- Case: Epoxy, Molded 

- Epoxy Meets UL 94, V−0 @ 0.125 in 

- Weight: 1.9 Grams (Approximately) 

- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

- Lead Temperatures for Soldering Purposes: 260°C Max. for 10 Seconds 

- ESD Rating: Human Body Model 3B Machine Model C 

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1<br>2, 4<br>3 a,<br>4<br>1 if 2<br>3<br>TO−220<br>CASE 221A<br>STYLE 6<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

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AYWW<br>B2535LG<br>AKA<br>**----- End of picture text -----**<br>


A = Assembly Location Y = Year WW = Work Week B2535L= Device Code G = Pb−Free Package AKA = Polarity Designator 

**ORDERING INFORMATION** 

- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

**Device Package Shipping** MBR2535CTLG TO−220 50 Units/Rail (Pb−Free) ~~a~~ Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2015 **January, 2015 − Rev. 6** 

**MBR2535CTL/D** 

**MBR2535CTLG** 

## **MAXIMUM RATINGS** (Per Leg) 

|**MAXIMUM RATINGS**(Per Leg)||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|35|V|
|Average Rectified Forward Current<br>(TC= 142°C per Diode)<br>(TC= 142°C per Device)|IF(AV)|12.5<br>25|A|
|Peak Repetitive Forward Current, per Leg (Sq Wave, 20 kHz, TC= 139°C)|IFRM|25|A|
|Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)|IFSM|150|A|
|Peak Repetitive Reverse Surge Current (2.0�s, 1.0 kHz)|IRRM|1.0|A|
|Storage Temperature Range|Tstg|−65 to +150|°C|
|Operating Junction Temperature (Note 1)|TJ|−65 to +150|°C|
|Voltage Rate of Change (Rated VR)|dv/dt|10,000|V/�s|
|Controlled Avalanche Energy|Waval|20|mJ|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R � JA. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**|||||
|---|---|---|---|---|
|**Characteristic**|**Conditions**|**Symbol**|**Max**|**Unit**|
|Maximum Thermal Resistance, Junction−to−Case|Min. Pad|R�JC|2.0|°C/W|
|Maximum Thermal Resistance, Junction−to−Ambient|Min. Pad|R�JA|75.0||



## **ELECTRICAL CHARACTERISTICS** 

|**ELECTRICAL CHARACTERISTICS**||||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typical**|**Max**|**Unit**|
|Instantaneous Forward Voltage (Note 2)<br>(iF= 25 Amps, Tj= 25°C)<br>(iF= 12.5 Amps, Tj = 25°C)<br>(iF= 12.5 Amps, Tj = 125°C)|vF|−<br>−<br>−|0.51<br>0.41<br>0.33|0.55<br>0.47<br>0.41|V|
|Instantaneous Reverse Current (Note 2)<br>(Rated dc Voltage, Tj = 25°C)<br>(Rated dc Voltage, Tj = 125°C)|iR|−<br>−|0.8<br>300|5.0<br>500|mA|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

2. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. 

**www.onsemi.com** 

**2** 

**MBR2535CTLG** 

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100<br>150 ° C<br>10<br>125 ° C<br>1.0<br>25 ° C<br>0.1<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8<br>, INSTANTANEOUS FORWARD CURRENT (A) VF, INSTANTANEOUS FORWARD VOLTAGE (V)<br>IF<br>**----- End of picture text -----**<br>


**Figure 1. Typical Forward Voltage** 

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100<br>150 ° C<br>10<br>125 ° C<br>1.0<br>25 ° C<br>0.1<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1<br>, INSTANTANEOUS FORWARD CURRENT (A) VF, INSTANTANEOUS FORWARD VOLTAGE (V)<br>IF<br>**----- End of picture text -----**<br>


**Figure 2. Maximum Forward Voltage** 

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1,000<br>TJ = 125 ° C<br>100<br>TJ = 100 ° C<br>10<br>1.0<br>TJ = 25 ° C<br>0.1<br>0 5.0 10 15 20 25 30 35<br>VR, REVERSE VOLTAGE (V)<br>, REVERSE CURRENT (mA)<br>IR<br>**----- End of picture text -----**<br>


**Figure 3. Typical Reverse Current, Per Leg** 

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22<br>20<br>dc<br>18<br>16<br>14<br>12 Square Wave<br>10<br>8.0<br>6.0<br>4.0<br>2.0<br>0<br>120 125 130 135 140 145 150 155<br>TC, CASE TEMPERATURE ( ° C)<br>, AVERAGE FORWARD CURRENT (A)<br>IF(AV)<br>**----- End of picture text -----**<br>


**Figure 4. Current Derating, Case, Per Leg** 

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20 16<br>18 14 TJ = 150 ° C<br>16<br>Square Wave dc 12<br>14<br>12 R � JA = 16 ° C/W 10<br>Square Wave<br>10 8.0<br>dc<br>8.0<br>6.0<br>6.0<br>dc 4.0<br>4.0<br>2.0 R � JA = 75 ° C/W 2.0<br>No Heatsink Square Wave<br>0 0<br>0 25 50 75 100 125 150 175 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 22 24 26<br>TA, AMBIENT TEMPERATURE ( ° C) IF(AV), AVERAGE FORWARD CURRENT (A)<br>, AVERAGE FORWARD CURRENT (A) , AVERAGE POWER DISSIPATION (W)<br>IF(AV) PF(AV)<br>**----- End of picture text -----**<br>


**Figure 5. Current Derating, Ambient, Per Leg** 

**Figure 6. Forward Power Dissipation** 

**www.onsemi.com** 

**3** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**TO−220** CASE 221A ISSUE AK 

DATE 13 JAN 2022 

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SCALE 1:1<br>**----- End of picture text -----**<br>


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STYLE 1: STYLE 2: STYLE 3: STYLE 4:<br>PIN 1. BASE PIN 1. BASE PIN 1. CATHODE PIN 1. MAIN TERMINAL 1<br>2. COLLECTOR 2. EMITTER 2. ANODE 2. MAIN TERMINAL 2<br>3. EMITTER 3. COLLECTOR 3. GATE 3. GATE<br>4. COLLECTOR 4. EMITTER 4. ANODE 4. MAIN TERMINAL 2<br>STYLE 5: STYLE 6: STYLE 7: STYLE 8:<br>PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE<br>2. DRAIN 2. CATHODE 2. ANODE 2. ANODE<br>3. SOURCE 3. ANODE 3. CATHODE 3. EXTERNAL TRIP/DELAY<br>4. DRAIN 4. CATHODE 4. ANODE 4. ANODE<br>STYLE 9: STYLE 10: STYLE 11: STYLE 12:<br>PIN 1. GATE PIN 1. GATE PIN 1. DRAIN PIN 1. MAIN TERMINAL 1<br>2. COLLECTOR 2. SOURCE 2. SOURCE 2. MAIN TERMINAL 2<br>3. EMITTER 3. DRAIN 3. GATE 3. GATE<br>4. COLLECTOR 4. SOURCE 4. SOURCE 4. NOT CONNECTED<br>**----- End of picture text -----**<br>


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Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42148B Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: TO−220 PAGE 1 OF 1<br>**----- End of picture text -----**<br>


**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative 

◊ 

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