# Schottky Rectifier, High Temperature, 100 V, 20 A, Dual Common Cathode, TO-220AB, 3 Pins, 950 mV

![Product image](https://novapart.co/image/farnell:1453405/)

**URL**: https://novapart.co/products/MBR20H100CT/schottky-rectifier-high-temperature-100-v-20-a
**SKU**: MBR20H100CT
**Manufacturer**: TAIWAN SEMICONDUCTOR
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes
**Price**: €0.4050
**Stock**: 200+
**Lead Time**: 176 days (indicative)

## Description

Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):20A; Diode Configuration:Dual Common Cathode; Diode Case Style:TO-220AB; No. of Pins:3Pins; Forward Voltage VF Max:950mV; Forwa

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Product Range | MBR20 |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-220AB |
| Diode Configuration | Dual Common Cathode |
| Forward Voltage Max | 950mV |
| Forward Surge Current | 150A |
| Average Forward Current | 20A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 100V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1453405/)

**MBR20H100CT thru MBR20H200CT** Taiwan Semiconductor 

## **Dual Common Cathode Schottky Rectifier** 

## FEATURES 

- Low power loss, high efficiency 

- Guardring for overvoltage protection 

- High surge current capability 

- Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC 

- Halogen-free according to IEC 61249-2-21 definition 

## MECHANICAL DATA 

## **TO-220AB** 

## **Case:** TO-220AB 

Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free 

Base P/N with prefix "H" on packing code - AEC-Q101 qualified 

**Terminal:** Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, 

with prefix "H" on packing code meet JESD 201 class 2 whisker test 

**Polarity:** As marked 

**Mounting torque:** 5 in-lbs maximum 

**Weight:** 1.8 g (approximately) 

|MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25℃unless otherwise noted)|MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25℃unless otherwise noted)|MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25℃unless otherwise noted)|MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25℃unless otherwise noted)|MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25℃unless otherwise noted)|MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25℃unless otherwise noted)|
|---|---|---|---|---|---|
|PARAMETER|SYMBOL|MBR<br>20H100CT|MBR<br>20H150CT|MBR<br>20H200CT|UNIT|
|Maximum repetitive peak reverse voltage<br>~~a~~|VRRM<br>~~a~~|100<br>~~a~~|150<br>~~a~~|200<br>~~a~~|V<br>~~a~~|
|Maximum RMS voltage<br>~~a~~|VRMS<br>~~a~~|70<br>~~a~~|105<br>~~a~~|140<br>~~a~~|V<br>~~a~~|
|Maximum DC blocking voltage<br>~~a~~|VDC<br>~~a~~|100<br>~~a~~|150<br>~~a~~|200<br>~~a~~|V<br>~~a~~|
|Maximum average forward rectified current<br>~~ee~~|IF(AV)<br>~~ee ee~~|20<br>~~ee~~|||A|
|Peak repetitive forward current<br>(Rated VR, Square Wave, 20KHz)<br>~~ee~~|IFRM<br>~~ee ee~~|20<br>~~ee~~|||A|
|Peak forward surge current, 8.3 ms single half<br>sine-wave superimposed on rated load<br>~~ee~~|IFSM<br>~~ee ee~~|150<br>~~ee~~|||A|
|Peak repetitive reverse surge current (Note 1)|IRRM|1.0||0.5|A|
|Maximum instantaneous forward voltage (Note 2)<br>IF= 10A, TJ=25℃<br>IF= 10A, TJ=125℃<br>IF= 20A, TJ=25℃<br>IF= 20A, TJ=125℃|VF|0.85<br>0.75<br>0.95<br>0.85|0.88<br>0.75<br>0.97<br>0.85||V|
|Maximum reverse current @ rated VR<br>TJ=25℃<br>TJ=125℃<br>~~es~~|IR<br>~~Q~~|5<br>2<br>~~Q~~||||
||||||μA|
||||||mA|
|Voltage rate of change (Rated VR)<br>~~es~~<br>~~es~~|dV/dt<br>~~Q~~<br>~~Q~~|10000<br>~~Q~~<br>~~Q~~|||V/μs|
|Typical thermal resistance<br>~~es ~~<br>~~es~~<br>~~es~~|RθJC<br> ~~Q~~<br>~~Q~~<br>~~Q~~|1.5<br>~~Q~~<br>~~Q~~<br>~~Q~~|||OC/W|
|Operating junction temperature range<br>~~es ~~<br>~~es~~|TJ<br> ~~Q~~<br>~~Q~~|- 55 to +175<br>~~Q~~<br>~~Q~~|||OC|
|Storage temperature range<br>~~es ~~<br>~~ee~~|TSTG<br> ~~Q~~<br>~~ee~~|- 55 to +175<br>~~Q~~<br>~~ee~~|||OC<br>~~ee~~|



Note 1: tp = 2.0 μs, 1.0KHz 

Note 2: Pulse test with PW=300μs, 1% duty cycle 

Document Number: DS_D1308064 

Version: H13 

**MBR20H100CT thru MBR20H200CT** Taiwan Semiconductor 

## ORDERING INFORMATION 

|ORDERING INFORMATION|ORDERING INFORMATION|ORDERING INFORMATION|ORDERING INFORMATION|ORDERING INFORMATION|ORDERING INFORMATION|
|---|---|---|---|---|---|
|PART NO.|AEC-Q101<br>QUALIFIED|PACKING CODE|GREEN COMPOUND<br>CODE|PACKAGE|PACKING|
|MBR20HxxxCT<br>(Note)|Prefix "H"|C0|Suffix "G"|TO-220AB|50 / Tube|



Note 1: "xxx" defines voltage from 100V (MBR20H100CT) to 200V (MBR20H200CT) 

## EXAMPLE 

|EXAMPLE|EXAMPLE|EXAMPLE|EXAMPLE|EXAMPLE|EXAMPLE|
|---|---|---|---|---|---|
|PREFERRED P/N|PART NO.|AEC-Q101<br>QUALIFIED|PACKING CODE|GREEN COMPOUND<br>CODE|DESCRIPTION|
|MBR20H100CT C0|MBR20H100CT||C0|||
|MBR20H100CT C0G|MBR20H100CT||C0|G|Green compound|
|MBR20H100CTHC0|MBR20H100CT|H|C0||AEC-Q101 qualified|



## RATINGS AND CHARACTERISTICS CURVES 

(TA=25 ℃ unless otherwise noted) 

FIG.1- FORWARD CURRENT DERATING CURVE 

**==> picture [239 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
25<br>20<br>15 ————<br>10 TTT TTT TTT NT?<br>5 RESISTIVE OR TT<br>INDUCTIVELOAD<br>WITH HEATSINK<br>0 TTT<br>0 25 50 75 100 125 150 175<br>CASE TEMPERATURE ( [o] C)<br>A<br>CURRENT (A)<br>AVERAGE FORWARD<br>**----- End of picture text -----**<br>


FIG.3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS PER LEG 

**==> picture [262 x 206] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>—————<br>———————————<br>et<br>10 TJ=125 ℃<br>KH<br>SS Se<br>tf TJ=25 ℃ _<br>1<br>-_OS ——| ff ff esses f i<br>PULSE WIDTH=300μs<br>1% DUTY CYCLE<br>f f f<br>0.1<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2<br>FORWARD VOLTAGE (V)<br> A<br>CURRENT (A)<br>INSTANTANEOUS FORWARD<br>**----- End of picture text -----**<br>


**==> picture [257 x 466] intentionally omitted <==**

**----- Start of picture text -----**<br>
FIG. 2- MAXIMUM  NON-REPETITIVE FORWARD<br>SURGE CURRENT PER LEG<br>150<br>125 8.3ms Single Half Sine Wave<br>JEDEC Method<br>100<br>IST as case<br>75<br>TANT<br>50<br>UNM<br>25<br>A SA<br>0 PL ELEhth<br>1 10 100<br>NUMBER OF CYCLES AT 60 Hz<br>FIG. 4- TYPICAL REVERSE CHARACTERISTICS<br>PER LEG<br>10<br>a a ae<br>1<br>ee<br>TJ=125 ℃<br>a<br>0.1 ee<br>SS ee<br>TJ=75 ℃<br>0.01 ee<br>0.001 SSSa eetSS SS SS |<br>TJ=25 ℃<br>0.0001 aSe.————— SEE<br>0 20 40 60 80 100 120 140<br>PERCENT OF RATED PEAK REVERSE VOLTAGE (%)<br>PEAK FORWARD SURGE  CURRENT (A)<br>A<br>CURRENT (mA)<br>INSTANTANEOUS REVERSE<br>**----- End of picture text -----**<br>


Document Number: DS_D1308064 

Version: H13 

**MBR20H100CT thru MBR20H200CT** 

Taiwan Semiconductor 

**==> picture [245 x 202] intentionally omitted <==**

**----- Start of picture text -----**<br>
FIG. 5- TYPICAL JUNCTION CAPACITANCE PER<br>LEG<br>10,000<br>FHF<br>1,000<br>PTB<br>ee ee<br>100 a a<br>0.1 1 10 100<br>REVERSE VOLTAGE (V)<br>A<br>JUNCTION CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**==> picture [250 x 207] intentionally omitted <==**

**----- Start of picture text -----**<br>
FIG. 6- TYPICAL TRANSIENT THERMAL IMPEDANCE<br>PER LEG<br>100<br>10<br>A (SN<br>1 PII<br>SaUI<br>0.1 Hn tt Hl<br>0.01 0.1 1 10 100<br>T-PULSE DURATION. (sec)<br>/W)<br>℃<br>IMPEDANCE(<br>TRANSIENT THERMAL<br>**----- End of picture text -----**<br>


## PACKAGE OUTLINE DIMENSIONS 

**==> picture [374 x 260] intentionally omitted <==**

**----- Start of picture text -----**<br>
Unit (mm) Unit (inch)<br>DIM.<br>Min Max Min Max<br>| A ee - 10.50 - 0.413<br>a<br>ln See<br>B 2.62 3.44 0.103 0.135<br>C 2.80 4.20 0.110 0.165<br>a<br>Fo K L D 0.68 0.94 0.027 0.037<br>E 3.54 4.00 0.139 0.157<br>F 14.60 16.00 0.575 0.630<br>G 13.19 14.79 0.519 0.582<br>H 2.41 2.67 0.095 0.105<br>aee<br>I 4.42 4.76 0.174 0.187<br>J 1.14 1.40 0.045 0.055<br>G 1 a<br>K 5.84 6.86 0.230 0.270<br>a<br>L 2.20 2.80 0.087 0.110<br>a<br>M 0.35 0.64 0.014 0.025<br>LM es<br>**----- End of picture text -----**<br>


## MARKING DIAGRAM 

P/N = Specific Device Code G = Green Compound YWW = Date Code F = Factory Code 

Document Number: DS_D1308064 

Version: H13 

**MBR20H100CT thru MBR20H200CT** Taiwan Semiconductor 

## Notice 

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. 

Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. 

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 

Document Number: DS_D1308064 

Version: H13 



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- [Supplier page](https://es.farnell.com/taiwan-semiconductor/mbr20h100ct-c0/diode-schottky-20a-100v/dp/1453405)
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