# Schottky Rectifier, 45 V, 20 A, Single Triple Anode Dual Cathode, DFN, 5 Pins, 610 mV

![Product image](https://novapart.co/image/farnell:3606373/)

**URL**: https://novapart.co/products/MBR2045MFST1G/schottky-rectifier-45-v-20-a-single-triple-anode
**SKU**: MBR2045MFST1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes
**Price**: €0.3750
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 5Pins |
| Product Range | - |
| Qualification | - |
| Diode Mounting | Surface Mount |
| Diode Case Style | DFN |
| Diode Configuration | Single Triple Anode Dual Cathode |
| Forward Voltage Max | 610mV |
| Forward Surge Current | 400A |
| Average Forward Current | 20A |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 45V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3606373/)

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## Switch Mode Power Rectifiers 

## MBR2045MFS, NRVB2045MFS 

These state−of−the−art devices have the following features: 

## **SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 45 VOLTS** 

1,2,3 5,6 

## **Features** 

- Low Power Loss / High Efficiency 

- New Package Provides Capability of Inspection and Probe After Board Mounting 

- Guardring for Stress Protection 

- Low Forward Voltage Drop 

- 150°C Operating Junction Temperature 

- Wettable Flacks Option Available 

- NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

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MARKING<br>DIAGRAM<br>1 A C<br>A B2045<br>SO−8 FLAT LEAD<br>CASE 488AA A AYWZZ<br>STYLE 2 Not Used C<br>B2045 = Specific Device Code<br>A = Assembly Location<br>Y = Year<br>W = Work Week<br>ZZ = Lot Traceability<br>**----- End of picture text -----**<br>


## **Mechanical Characteristics:** 

- Case: Epoxy, Molded 

- Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. 

- Lead Finish: 100% Matte Sn (Tin) 

- Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 

- Device Meets MSL 1 Requirements 

## **Applications** 

- Output Rectification in Compact Portable Consumer Applications 

- Freewheeling Diode used with Inductive Loads 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|MBR2045MFST1G|SO−8 FL<br>(Pb−Free)|1500 /<br>Tape & Reel|
|NRVB2045MFST1G*|SO−8 FL<br>(Pb−Free)|1500 /<br>Tape & Reel|



**DISCONTINUED** (Note 1) 

MBR2045MFST3G SO−8 FL 5000 / (Pb−Free) Tape & Reel NRVB2045MFST3G* SO−8 FL 5000 / (Pb−Free) Tape & Reel ~~ET~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

1. **DISCONTINUED:** These devices are not recommended for new design. Please contact your **onsemi** representative for information. The most current information on these devices may be available on www.onsemi.com. 

Publication Order Number: **MBR2045MFS/D** 

**1** 

© Semiconductor Components Industries, LLC, 2014 **June, 2024 − Rev. 3** 

**MBR2045MFS, NRVB2045MFS** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|45|V|
|Average Rectified Forward Current<br>(Rated VR, TC= 130°C)|IF(AV)|20|A|
|Peak Repetitive Forward Current,<br>(Rated VR, Square Wave, 20 kHz, TC= 135°C)|IFRM|40|A|
|Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|400|A|
|Storage Temperature Range|Tstg|−65 to +175|°C|
|Operating Junction Temperature|TJ|−55 to +150|°C|
|Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)|EAS|150|mJ|
|ESD Rating (Human Body Model)||3B||
|ESD Rating (Machine Model)||M4||



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

NOTE: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA 

## **THERMAL CHARACTERISTICS** 

|**Characteristic**<br>Thermal Resistance, Junction−to−Case, Steady State<br>(Assumes 600 mm21 oz. copper bond pad, on a FR4 board)<br>Thermal Resistance, Junction−to−Ambient, Steady State<br>(Assumes 600 mm2, 2−oz, 2 layer on a FR4 board)<br>**ELECTRICAL CHARACTERISTICS**<br>Instantaneous Forward Voltage (Note 1)<br>~~———~~|**Symbol**<br>RθJC<br>RθJA<br>vF|**Typ**<br>**Max**<br>**Unit**<br>−<br>1.6<br>°C/W<br>−<br>45<br>°C/W<br>V<br>~~oe~~|**Typ**<br>**Max**<br>**Unit**<br>−<br>1.6<br>°C/W<br>−<br>45<br>°C/W<br>V<br>~~oe~~|**Typ**<br>**Max**<br>**Unit**<br>−<br>1.6<br>°C/W<br>−<br>45<br>°C/W<br>V<br>~~oe~~|**Typ**<br>**Max**<br>**Unit**<br>−<br>1.6<br>°C/W<br>−<br>45<br>°C/W<br>V<br>~~oe~~|
|---|---|---|---|---|---|
|(iF= 15 A, TJ= 125°C)||0.35|0.41|||
|(iF= 15 A, TJ= 25°C)||0.44|0.49|||
|(iF= 30 A, TJ= 125°C)||0.46|0.58|||
|(iF= 30 A, TJ= 25°C)||0.51|0.61|||
|Instantaneous Reverse Current (Note 1)|iR|||mA||
|(Rated dc Voltage, TJ= 125°C)||200|300|||
|(Rated dc Voltage, TJ= 25°C)||0.3|0.6|||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

1. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2.0%. 

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**MBR2045MFS, NRVB2045MFS** 

## **TYPICAL CHARACTERISTICS** 

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100.00 100.00<br>a ee eee eee eee ee e Es ee ee ee ee 0 eee ee |<br>a A a<br>10.00 n TA = 150 ° C y 10.00 TA = 150 ° C<br>47 eee 274<br>125 ° C<br>1.00 HF 1.00 ro OI 125 ° C OT rd<br>iff, f f | | | |_ | if fift |f| | |<br>25 ° C 25 ° C −40 ° C<br>−40 ° C<br>0.10 So| if eef/fae | | | | 0.10 | A wf | vi fe | | ct lt<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.800.90<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)<br>Figure 1. Typical Instantaneous Forward Figure 2. Maximum Instantaneous Forward<br>Voltage Voltage<br>1.E+00 1.E+00<br>TA = 150 ° C TA = 150 ° C<br>1.E−01 1.E−01<br>— a<br>1.E−02 TA = 125 ° C 1.E−02 TA = 125 ° C<br>————— =<br>1.E−03 ———— 1.E−03 ———————————=<br>1.E−04 TA = 25 ° C 1.E−04 TA = 25 ° C<br>1.E−05 1.E−05<br>1.E−06 1.E−06<br>—$—_— — ==<br>1.E−07 ——= TA = −40 OS ° C  — _ 1.E−07 — —O TA = −40 ° C —<br>1.E−08 S SS 1.E−08 eS<br>SSE OS<br>1.E−09 a 1.E−09 a<br>1.E−10 1.E−10<br>0 10 20 30 40 0 5 10 15 20 25 30 35 40 45<br>VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)<br>Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics<br>10,000 60<br>TJ = 25 ° C 55 R JC = 1.6 ° C/W<br>50 dc<br>45<br>1,000 PN 40 ns<br>35 SQUARE WAVE<br>TTa 30 ae n ee<br>a 25 a a ee ee ee e e<br>100 ee ee ee e e 20 a a A<br>15<br>eea 105 eeeeee<br>10 a ee ee e e 0 ( ee<br>0 10 20 30 40 0 20 40 60 80 100 120 140 160<br>VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE ( ° C)<br>, INSTANTANEOUS FORWARD CURRENT (A) , INSTANTANEOUS FORWARD CURRENT (A)<br>IF IF<br>, INSTANTANEOUS REVERSE CURRENT (A) , INSTANTANEOUS REVERSE CURRENT (A)<br>IR IR<br>CURRENT (A)<br>, AVERAGE FORWARD<br>IF(AV)<br>C, JUNCTION CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 5. Typical Junction Capacitance** 

**Figure 6. Current Derating TO−220AB** 

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**MBR2045MFS, NRVB2045MFS** 

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TYPICAL CHARACTERISTICS<br>**----- End of picture text -----**<br>


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8<br>7 I APK /I AV  = 20 IAPK/IAV = 10<br>6 PpaAeA<br>5<br>IAPK/IAV = 5<br>4<br>pf YY | A<br>3<br>2 aay ane<br>SQUARE WAVE<br>1 PAL<br>DC<br>0<br>0 1 2 3 4<br>IF(AV), AVERAGE FORWARD CURRENT (A)<br>, AVERAGE FORWARD<br>F(AV) POWER DISSIPATION (W)<br>P<br>**----- End of picture text -----**<br>


**Figure 7. Forward Power Dissipation** 

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100<br>Duty Cycle = 50%<br>20%<br>10<br>10% Assumes 25 ° C ambient and soldered to<br>5%<br>1 2% a 600 mm [2]  − oz copper pad on PCB<br>1%<br>0.1<br>0.01<br>Single Pulse<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>C/W)<br>°<br>R(t) (<br>**----- End of picture text -----**<br>


**Figure 8. Thermal Response** 

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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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DFN5 5x6, 1.27P<br>(SO−8FL)<br>CASE 488AA<br>1 ISSUE N<br>SCALE 2:1 DATE 25 JUN 2018<br>2 X NOTES:<br>1. DIMENSIONING AND TOLERANCING PER<br>0.20 C ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETER.<br>D A 3. DIMENSION D1 AND E1 DO NOT INCLUDE<br>MOLD FLASH PROTRUSIONS OR GATE<br>2 B 2 X BURRS.<br>D1 MILLIMETERS<br>0.20 C<br>DIM MIN NOM MAX<br>A 0.90 1.00 1.10<br>A1 0.00 −−− 0.05<br>E1 4 X b 0.33 0.41 0.51<br>� c 0.23 0.28 0.33<br>E D 5.00 5.15 5.30<br>2 D1 4.70 4.90 5.10<br>c D2 3.80 4.00 4.20<br>A1 E 6.00 6.15 6.30<br>E1 5.70 5.90 6.10<br>1 2 3 4 E2 3.45 3.65 3.85<br>e 1.27 BSC<br>TOP VIEW G 0.51 0.575 0.71<br>C K 1.20 1.35 1.50<br>SEATING L 0.51 0.575 0.71<br>0.10 C DETAIL A PLANE L1 0.125 REF<br>M 3.00 3.40 3.80<br>A � 0   � −−− 12    �<br>0.10 C GENERIC<br>SIDE VIEW MARKING DIAGRAM*<br>DETAIL A<br>1<br>8X b XXXXXX<br>0.10 C A B e/2 AYWZZ<br>0.05 c<br>L e<br>1 4 XXXXXX = Specific Device Code<br>K A = Assembly Location<br>Y = Year<br>RECOMMENDED W = Work Week<br>E2 SOLDERING FOOTPRINT* ZZ = Lot Traceability<br>(EXPOSED PAD)PIN 5 L1 M 0.4952X 4.560 *This information is generic. Please refer to<br>2X device data sheet for actual part marking.<br>1.530 Pb−Free indicator, “G” or microdot “  � ”,<br>may or may not be present. Some products<br>G D2 2X may not follow the Generic Marking.<br>BOTTOM VIEW 0.475<br>3.200<br>4.530<br>STYLE 1: STYLE 2: 2X 1.330<br>PIN 1. 2. SOURCESOURCE PIN 1. 2. ANODEANODE 0.905<br> 3. SOURCE  3. ANODE 1<br> 4. GATE  4. NO CONNECT<br> 5. DRAIN  5. CATHODE 0.965<br>4X<br>1.000 1.270<br>4X 0.750 PITCH<br>DIMENSIONS: MILLIMETERS<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the  onsemi  Soldering and Mounting<br>Techniques Reference Manual, SOLDERRM/D.<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98AON14036D Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: DFN5 5x6, 1.27P (SO−8FL) PAGE 1 OF 1<br>**----- End of picture text -----**<br>


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**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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