# DIODE, SCHOTTKY, 2X10A, 45V

![Product image](https://novapart.co/image/farnell:4191944/)

**URL**: https://novapart.co/products/MBR2045CTG/diode-schottky-2x10a-45v
**SKU**: MBR2045CTG
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes
**Price**: €0.3890
**Stock**: 50+

## Description

Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (15-Jan-2018) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Diode Case Style | TO-220AB |
| Diode Configuration | Dual Common Cathode |
| Forward Voltage Max | 950mV |
| Forward Surge Current | 150A |
| Average Forward Current | 10A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 45V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4191944/)

## Switch-mode Power Rectifier 

## MBR2045CTG, MBRF2045CTG 

## **Features and Benefits** 

## **www.onsemi.com** 

- Low Forward Voltage 

- Low Power Loss / High Efficiency 

- High Surge Capacity 

- 175°C Operating Junction Temperature 

- 20 A Total (10 A Per Diode Leg) 

**SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 45 VOLTS** 

- These Devices are Pb−Free and are RoHS Compliant 

## **Applications** 

- Power Supply − Output Rectification 

- Power Management 

- Instrumentation 

## **Mechanical Characteristics** 

- Case: Epoxy, Molded 

- Epoxy Meets UL 94, V−0 @ 0.125 in 

- Weight: 1.9 Grams (Approximately) 

- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

- Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 

- ESD Rating: Human Body Model = 3B Machine Model = C 

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1<br>2, 4<br>3<br>4<br>~<br>1 1<br>2 r 2<br>3 3<br>TO−220AB TO−220<br>CASE 221A FULLPAK<br>STYLE 6 CASE 221D<br>**----- End of picture text -----**<br>


## **DEVICE MARKING INFORMATION** 

See general marking information in the device marking section on page 2 of this data sheet. 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 3 of this data sheet. 

Publication Order Number: **MBR2045CT/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **July, 2020 − Rev. 13** 

## **MBR2045CTG, MBRF2045CTG** 

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AYWW<br>AYWW B2045G<br>MBR2045CTG AKA<br>AKA<br>TO−220AB TO−220 FULLPAK �<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>G = Pb−Free Package<br>AKA = Diode Polarity<br>**----- End of picture text -----**<br>


## **Figure 1. Marking Diagrams** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|45|V|
|Average Rectified Forward Current<br>Per Device<br>Per Diode (TC= 165°C)|IF(AV)|20<br>10|A|
|Peak Repetitive Forward Current<br>per Diode Leg (Square Wave, 20 kHz, TC= 163°C)|IFRM|20|A|
|Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|150|A|
|Peak Repetitive Reverse Surge Current (2.0�s, 1.0 kHz)<br>See Figure 13|IRRM|1.0|A|
|Storage Temperature Range|Tstg|−65 to +175|°C|
|Operating Junction Temperature (Note 1)|TJ|−65 to +175|°C|
|Voltage Rate of Change (Rated VR)|dv/dt|10,000|V/�s|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R � JA. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Maximum Thermal Resistance<br>(MBR2045CTG)<br>− Junction−to−Case<br>− Junction−to−Ambient<br>(MBRF2045CTG)<br>− Junction−to−Case<br>− Junction−to−Ambient|R�JC<br>R�JA<br>R�JC<br>R�JA|2.0<br>60<br>4.75<br>75|°C/W|



**www.onsemi.com** 

**2** 

**MBR2045CTG, MBRF2045CTG** 

## **ELECTRICAL CHARACTERISTICS** 

|**ELECTRICAL CHARACTERISTICS**||||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|Instantaneous Forward Voltage (Note 2)<br>(iF= 10 A, TJ= 125°C)<br>(iF= 20 A, TJ= 125°C)<br>(iF= 20 A, TJ= 25°C)|vF|−<br>−<br>−|0.50<br>0.67<br>0.71|0.57<br>0.72<br>0.84|V|
|Instantaneous Reverse Current (Note 2)<br>(Rated dc Voltage, TJ= 125°C)<br>(Rated dc Voltage, TJ= 25°C)|iR|−<br>−|10.4<br>0.02|15<br>0.1|mA|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. 

## **ORDERING INFORMATION** 

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Device Order Number Package Type Shipping [†]<br>MBR2045CTG TO−220 50 Units / Rail<br>(Pb−Free)<br>MBRF2045CTG TO−220FP 50 Units / Rail<br>(Pb−Free)<br>100 100<br>70 70 TJ = 150°C 125°C<br>50 50 25°C<br>30 30<br>20 TJ = 150°C 20<br>10 10<br>7.0 7.0<br>5.0 5.0<br>125°C<br>25°C<br>3.0 3.0<br>2.0 2.0<br>1.0 1.0<br>0.7 0.7<br>0.5 0.5<br>0.3 0.3<br>0.2 0.2<br>0.1 0.1<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>vF, INSTANTANEOUS VOLTAGE (VOLTS) vF, INSTANTANEOUS VOLTAGE (VOLTS)<br>iF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>**----- End of picture text -----**<br>


**Figure 1. Typical Forward Voltage** 

**Figure 2. Maximum Forward Voltage** 

**www.onsemi.com** 

**3** 

**MBR2045CTG, MBRF2045CTG** 

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100<br>TJ = 150°C<br>10<br>125°C<br>1.0<br>100°C<br>0.1<br>0.01<br>25°C<br>0.001<br>0.0001<br>0 5.0 10 15 20 25 30 35 40 45 50<br>VR, REVERSE VOLTAGE (VOLTS)<br>, REVERSE CURRENT (mA)<br>IR<br>**----- End of picture text -----**<br>


**Figure 3. Typical Reverse Current** 

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200<br>100<br>70<br>50<br>30<br>20<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100<br>NUMBER OF CYCLES AT 60 Hz<br>Figure 5. Maximum Surge Capability<br>20<br>18 R�JA = 16°C/W<br>dc (With TO-220 Heat Sink)<br>16 R�JA = 60°C/W<br>14 (No Heat Sink)<br>12 SQUARE WAVE<br>10<br>8.0<br>dc<br>6.0<br>4.0<br>2.0<br>0<br>0 25 50 75 100 125 150 175<br>TA, AMBIENT TEMPERATURE (°C)<br>IFSM, PEAK HALF-WAVE CURRENT (AMPS)<br>IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>**----- End of picture text -----**<br>


**Figure 7. Current Derating, Ambient, Per Leg** 

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100<br>TJ = 150°C<br>10 125°C<br>100°C<br>1.0<br>75°C<br>0.1<br>25°C<br>0.01<br>0.001<br>0 5.0 10 15 20 25 30 35 40 45 50<br>VR, REVERSE VOLTAGE (VOLTS)<br>, REVERSE CURRENT (mA)<br>IR<br>**----- End of picture text -----**<br>


**Figure 4. Maximum Reverse Current** 

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18<br>dc<br>16<br>14<br>12<br>10 SQUARE<br>WAVE<br>8.0<br>6.0<br>4.0<br>2.0<br>0<br>140 145 150 155 160 165 170 175 180<br>TC, CASE TEMPERATURE (°C)<br>, AVERAGE FORWARD CURRENT (AMPS)<br>IF(AV)<br>**----- End of picture text -----**<br>


**Figure 6. Current Derating, Case, Per Leg** 

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28<br>26 T J  = 175°C<br>24<br>22<br>20<br>18<br>16 SQUARE dc<br>14 WAVE<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30<br>IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>, AVERAGE FORWARD POWER DISSIPATION (WATTS)<br>PF(AV)<br>**----- End of picture text -----**<br>


**Figure 8. Forward Power Dissipation** 

**www.onsemi.com** 

**4** 

**MBR2045CTG, MBRF2045CTG** 

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1.0<br>0.7<br>0.5<br>0.3<br>0.2 t Ppk Ppk DUTY CYCLE, D = tp/t1<br>0.1 p TIME PEAK POWER, Ppk, is peak of an<br>0.07 t1 equivalent square power pulse.<br>0.05 �T JL  = P pk • R� JL  [D + (1 - D) • r(t 1  + t p ) + r(t p ) - r(t 1 )] where:<br>�TJL = the increase in junction temperature above the lead temperature.<br>0.03 r(t) = normalized value of transient thermal resistance at time, t, i.e.:<br>0.02 r(t 1  + t p ) = normalized value of transient thermal resistance at time,<br>t1 + tp, etc.<br>0.01<br>0.01 0.1 1.0 10 100 1000<br>t, TIME (ms)<br>Figure 9. Thermal Response for MBR2045CT<br>100<br>D = 0.5<br>0.2<br>10 0.1<br>0.05<br>0.02<br>1.0<br>0.01<br>0.1<br>P(pk)<br>t1<br>0.01 SINGLE PULSE<br>t2<br>DUTY CYCLE, D = t1/t2<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>t1, TIME (sec)<br>(NORMALIZED)<br>r(t), TRANSIENT THERMAL RESISTANCE<br>R(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


**Figure 10. Thermal Response Junction−to−Ambient for MBRF2045CT** 

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10<br>D = 0.5<br>1.0 0.2<br>0.1<br>0.05<br>0.02<br>0.1<br>0.01<br>P (pk)<br>0.01 SINGLE PULSE t1<br>t2<br>DUTY CYCLE, D = t1/t2<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>t1, TIME (sec)<br>R(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


**Figure 11. Thermal Response Junction−to−Case for MBRF2045CT** 

**www.onsemi.com** 

**5** 

**MBR2045CTG, MBRF2045CTG** 

## **HIGH FREQUENCY OPERATION** 

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1000<br>900 TJ = 25°C<br>f = 1 MHz<br>800<br>700<br>600<br>500<br>400<br>300<br>200<br>100<br>0<br>0 10 20 30 40 50<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 12.) 

Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 percent at 2.0 MHz, e.g., the ratio of dc power to RMS power in the load is 0.28 at this frequency, whereas perfect rectification would yield 0.406 for sine wave inputs. However, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss; it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage. 

**Figure 12. Typical Capacitance** 

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+150 V, 10 mAdc<br>2.0 k�<br>VCC 12 Vdc<br>D.U.T. +<br>12 V 100 4.0 �F<br>2N2222<br>2.0 �s<br>1.0 kHz<br>CURRENT<br>2N6277<br>AMPLITUDE<br>100<br>ADJUST<br>CARBON<br>0-10 AMPS<br>1.0 CARBON<br>1N5817<br>**----- End of picture text -----**<br>


**Figure 13. Test Circuit for dv/dt and Reverse Surge Current** 

FULLPAK is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. 

**www.onsemi.com** 

**6** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**TO−220** CASE 221A ISSUE AK 

DATE 13 JAN 2022 

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SCALE 1:1<br>**----- End of picture text -----**<br>


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STYLE 1: STYLE 2: STYLE 3: STYLE 4:<br>PIN 1. BASE PIN 1. BASE PIN 1. CATHODE PIN 1. MAIN TERMINAL 1<br>2. COLLECTOR 2. EMITTER 2. ANODE 2. MAIN TERMINAL 2<br>3. EMITTER 3. COLLECTOR 3. GATE 3. GATE<br>4. COLLECTOR 4. EMITTER 4. ANODE 4. MAIN TERMINAL 2<br>STYLE 5: STYLE 6: STYLE 7: STYLE 8:<br>PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE<br>2. DRAIN 2. CATHODE 2. ANODE 2. ANODE<br>3. SOURCE 3. ANODE 3. CATHODE 3. EXTERNAL TRIP/DELAY<br>4. DRAIN 4. CATHODE 4. ANODE 4. ANODE<br>STYLE 9: STYLE 10: STYLE 11: STYLE 12:<br>PIN 1. GATE PIN 1. GATE PIN 1. DRAIN PIN 1. MAIN TERMINAL 1<br>2. COLLECTOR 2. SOURCE 2. SOURCE 2. MAIN TERMINAL 2<br>3. EMITTER 3. DRAIN 3. GATE 3. GATE<br>4. COLLECTOR 4. SOURCE 4. SOURCE 4. NOT CONNECTED<br>**----- End of picture text -----**<br>


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Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42148B Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: TO−220 PAGE 1 OF 1<br>**----- End of picture text -----**<br>


**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

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MECHANICAL CASE OUTLINE<br>PACKAGE DIMENSIONS<br>TO−220 FULLPAK<br>CASE 221D−03<br>ISSUE K<br>S DATE 27 FEB 2009<br>NOTES:<br>−T− SEATINGPLANE 1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>−B− C 2. CONTROLLING DIMENSION: INCH<br>F 3. 221D-01 THRU 221D-02 OBSOLETE, NEW<br>S STANDARD 221D-03.<br>Q U INCHES MILLIMETERS<br>SCALE 1:1 DIM MIN MAX MIN MAX<br>A A 0.617 0.635 15.67 16.12<br>B 0.392 0.419 9.96 10.63<br>1 2 3 C 0.177 0.193 4.50 4.90<br>D 0.024 0.039 0.60 1.00<br>a H n ==So= F 0.116 0.129 2.95 3.28<br>−Y− G 0.100 BSC 2.54 BSC<br>K<br>H 0.118 0.135 3.00 3.43<br>J 0.018 0.025 0.45 0.63<br>hd ay : —<br>|| oe === K 0.503 0.541 12.78 13.73<br>G J L 0.048 0.058 1.23 1.47<br>N 0.200 BSC 5.08 BSC<br>N R Q 0.122 0.138 3.10 3.50<br>_ L R 0.099 0.117 2.51 2.96<br>S 0.092 0.113 2.34 2.87<br>D 3 PL U 0.239 0.271 6.06 6.88<br>0.25 (0.010) M B M Y<br>MARKING<br>DIAGRAMS<br>STYLE 1: STYLE 2: STYLE 3:<br>PIN 1. GATE PIN 1. BASE PIN 1. ANODE<br>2. DRAIN 2. COLLECTOR 2. CATHODE<br>3. SOURCE 3. EMITTER 3. ANODE<br>Qo Qo<br>STYLE 4: STYLE 5: STYLE 6: xxxxxxG AYWW<br>PIN 1. CATHODE PIN 1. CATHODE PIN 1. MT 1 AYWW xxxxxxG<br>2.3. ANODECATHODE  2. 3. ANODEGATE  2. 3. MT 2GATE AKA<br>tr | ot<br>Bipolar Rectifier<br>xxxxxx = Specific Device Code A = Assembly Location<br>G = Pb−Free Package Y = Year<br>A = Assembly Location WW = Work Week<br>Y = Year xxxxxx = Device Code<br>WW = Work Week G = Pb−Free Package<br>AKA = Polarity Designator<br>**----- End of picture text -----**<br>


Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42514B** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: TO−220 FULLPAK PAGE 1 OF 1** ~~ee~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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