# Schottky Rectifier, 45 V, 16 A, Single, TO-220AC, 2 Pins, 630 mV ![Product image](https://novapart.co/image/farnell:9557253/) **URL**: https://novapart.co/products/MBR1645G/schottky-rectifier-45-v-16-a-single-to-220ac-2 **SKU**: MBR1645G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes **Price**: €0.4890 **Stock**: 200+ **Lead Time**: 78 days (indicative) ## Description Repetitive Reverse Voltage Vrrm Max:45V; Forward Current If(AV):16A; Diode Configuration:Single; Diode Case Style:TO-220AC; No. of Pins:2Pins; Forward Voltage VF Max:630mV; Forward Surge Curren ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 2Pins | | Product Range | - | | Qualification | - | | Diode Mounting | Through Hole | | Diode Case Style | TO-220AC | | Diode Configuration | Single | | Forward Voltage Max | 630mV | | Forward Surge Current | 150A | | Average Forward Current | 16A | | Operating Temperature Max | 175°C | | Repetitive Peak Reverse Voltage | 45V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:9557253/) ## MBR1635, MBR1645, MBRB1645, NRVBB1645 ## Switch -m ode Power Rectifiers **16 A, 35 and 45 V** These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. **http://onsemi.com** ## **Features** **==> picture [177 x 196] intentionally omitted <==** **----- Start of picture text -----**
MARKING
4 DIAGRAMS
TO−220AC
y CASE 221B o
PLASTIC AYWWG
B16x5
KA
1
. 3 1, 4
3
A = Assembly Location
Y = Year
WW = Work Week
B16x5 = Device Code
x = 3 or 4
KA = Diode Polarity
G = Pb−Free Package
**----- End of picture text -----**
- Guard−ring for Stress Protection - Low Forward Voltage - 175°C Operating Junction Temperature - NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These Devices are Pb−Free and are RoHS Compliant ## **Mechanical Characteristics:** - Case: Epoxy, Molded - Weight: 1.9 Grams for TO−220 - 1.7 Grams for D[2] PAK - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds ## **MAXIMUM RATINGS** **==> picture [480 x 258] intentionally omitted <==** **----- Start of picture text -----**
|||||||||| |---|---|---|---|---|---|---|---|---| |Rating|Symbol|Value|Unit|4|CASE 418BD|[2]|PAK|B1645GAYWW| |Peak Repetitive Reverse Voltage|VRRM|V|STYLE 3| |Working Peak Reverse Voltage|VRWM|1| |DC Blocking Voltage|MBR1635|VR|35|3|1| |MBR1645|45|4| |MBRB1645|45|3| |tf]|@|..|2| |Se|Average Rectified Forward Current Delay(Rated VR, TC = 163|°|C) Total Device|IF(AV)|16|A|B1645A|= Device Code= Assembly Location| |Peak Repetitive Forward Current, Per|IFRM|32|A|Y|= Year| |Leg|WW|= Work Week| |(Rated VR, Square Wave,|G|= Pb−Free Package| |20 kHz, TC = 157|°|C) Total Device| |SL| |ORDERING INFORMATION| |Non−Repetitive Peak Surge Current|IFSM|150|A| |(Surge Applied at Rated Load Conditions|Device|Package|Shipping| |Halfwave, Single Phase, 60 Hz)| |PT| |MBR1635G|TO−220|50 Units / Rail| |Peak Repetitive Reverse Surge Current|IRRM|1.0|A| |(Pb−Free)| |(2.0 s, 1.0 kHz)| |Storage Temperature Range|Tstg|−65 to +175|°|C|MBR1645G|TO−220|50 Units / Rail| |(Pb−Free)| |Operating Junction Temperature (Note 1)|TJ|−65 to +175|°|C| |MBRB1645T4G|D|[[2]]|PAK|800 Units / Rail| |Voltage Rate of Change (Rated VR)|dv/dt|10,000|V/|s| **----- End of picture text -----**
**==> picture [178 x 116] intentionally omitted <==** **----- Start of picture text -----**
|||||| |---|---|---|---|---| |Device|Package|Shipping| |MBR1635G|TO−220|50 Units / Rail| |(Pb−Free)| |MBR1645G|TO−220|50 Units / Rail| |(Pb−Free)| |MBRB1645T4G|D|[[2]]|PAK|800 Units / Rail| |(Pb−Free)| |NRVBB1645T4G|D|[2]|PAK|800 Units / Rail| |(Pb−Free)| **----- End of picture text -----**
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R JA. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2014 **April, 2014 − Rev. 12** **MBR1635/D** **MBR1635, MBR1645, MBRB1645, NRVBB1645** ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Maximum Thermal Resistance,
Junction−to−Case|R�JC|1.5|°C/W| |**ELECTRICAL CHARACTERISTICS**|||| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Maximum Instantaneous Forward Voltage (Note 2)
(iF= 16 Amps, TC= 125°C)
(iF= 16 Amps, TC= 25°C)|vF|0.57
0.63|V| |Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TC= 125°C)
(Rated dc Voltage, TC= 25°C)|iR|40
0.2|mA| 2. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. **http://onsemi.com** **2** **MBR1635, MBR1645, MBRB1645, NRVBB1645** **==> picture [489 x 186] intentionally omitted <==** **----- Start of picture text -----**
100
1.0E−01
70 TJ = 150 ° C
50
1.0E−02
30 TJ = 125 ° C 125 ° C
20 100 ° C 1.0E−03
25 ° C
10 1.0E−04
7.0
5.0 1.0E−05
25 ° C
3.0
1.0E−06
2.0
1.0 1.0E−07
0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50
vF, INSTANTANEOUS FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)
, REVERSE CURRENT (A)
IR
iF, INSTANTANEOUS FORWARD CURRENT (A
**----- End of picture text -----**
**Figure 1. Typical Forward Voltage** **Figure 2. Typical Reverse Current** **==> picture [490 x 398] intentionally omitted <==** **----- Start of picture text -----**
28 20
26 dc R � JA = 16 ° C/W
24 18 dc R � JA = 60 ° C/W
22 16 (No Heat Sink)
20 SQUARE 14
18
12
16
14 10
12 8 dc
10
6
8
6 4 SQUARE
4 2 WAVE
2
0 0
145 150 155 160 165 170 175 0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE ( ° C) TA, AMBIENT TEMPERATURE ( ° C)
Figure 3. Current Derating, Case, Per Leg Figure 4. Current Derating, Ambient
16
I SQUARE WAVE
14 (RESISTIVE LOAD) PK � �
I
AV
12
I
10 (CAPACITATIVE�LOAD) IPK � 5.0 dc
AV
8.0
10
6.0
20
4.0
TJ = 125 ° C
2.0
0
0 2.0 4.0 6.0 8.0 10 12 14 16 18 20
IF(AV), AVERAGE FORWARD CURRENT (A)
CURRENT (A) CURRENT (A)
, AVERAGE FORWARD , AVERAGE FORWARD
IF(AV) IF(AV)
, AVERAGE POWER DISSIPATION (W)
F(AVE)
P
**----- End of picture text -----**
**Figure 5. Forward Power Dissipation** **http://onsemi.com** **3** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [470 x 282] intentionally omitted <==** **----- Start of picture text -----**
TO−220, 2−LEAD
CASE 221B−04
ISSUE F
DATE 12 APR 2013
o
NOTES:
C 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
Q B F T S 2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
SCALE 1:1 4 A 0.595 0.620 15.11 15.75
B 0.380 0.405 9.65 10.29
ae A Lt Bobs, C 0.160 0.190 4.06 4.82
U D 0.025 0.039 0.64 1.00
1 3 F 0.142 0.161 3.61 4.09
H G 0.190 0.210 4.83 5.33
H 0.110 0.130 2.79 3.30
K J 0.014 0.025 0.36 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.14 1.52
Q 0.100 0.120 2.54 3.04
L R 0.080 0.110 2.04 2.79
D R S 0.045 0.055 1.14 1.39
T 0.235 0.255 5.97 6.48
G J U 0.000 0.050 0.000 1.27
STYLE 1: STYLE 2:
PIN 1. CATHODE PIN 1. ANODE
2. N/A 2. N/A
3. ANODE 3. CATHODE
4. CATHODE 4. ANODE
**----- End of picture text -----**
**DOCUMENT NUMBER: 98ASB42149B DESCRIPTION: TO−220, 2−LEAD** ~~_~~ Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** ## **D[2] PAK 3** CASE 418B−04 **==> picture [442 x 456] intentionally omitted <==** **----- Start of picture text -----**
ISSUE L
SCALE 1:1 NOTES:
C 1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
E 2. CONTROLLING DIMENSION: INCH.
−B− V 3. 418B−01 THRU 418B−03 OBSOLETE,NEW STANDARD 418B−04.
W
4 INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.340 0.380 8.64 9.65
B 0.380 0.405 9.65 10.29
A C 0.160 0.190 4.06 4.83
S D 0.020 0.035 0.51 0.89
1 2 3 E 0.045 0.055 1.14 1.40
F 0.310 0.350 7.87 8.89
G 0.100 BSC 2.54 BSC
−T− H 0.080 0.110 2.03 2.79
K J 0.018 0.025 0.46 0.64
SEATINGPLANE G J W KL 0.0900.052 0.0720.110 2.291.32 2.791.83
M 0.280 0.320 7.11 8.13
ae H N 0.197 REF 5.00 REF
D 3 PL P 0.079 REF 2.00 REF
R 0.039 REF 0.99 REF
0.13 (0.005) M T B M S 0.575 0.625 14.60 15.88
V 0.045 0.055 1.14 1.40
VARIABLE
CONFIGURATION
ZONE N P
R
U
L L L
M M M
F F F
VIEW W−W VIEW W−W VIEW W−W
1 2 3
STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5: STYLE 6:
PIN 1. BASE PIN 1. GATE PIN 1. ANODE PIN 1. GATE PIN 1. CATHODE PIN 1. NO CONNECT
2. COLLECTOR 2. DRAIN 2. CATHODE 2. COLLECTOR 2. ANODE 2. CATHODE
3. EMITTER 3. SOURCE 3. ANODE 3. EMITTER 3. CATHODE 3. ANODE
4. COLLECTOR 4. DRAIN 4. CATHODE 4. COLLECTOR 4. ANODE 4. CATHODE
**----- End of picture text -----**
DATE 17 FEB 2015 ## **MARKING INFORMATION AND FOOTPRINT ON PAGE 2** Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42761B** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: D[2] PAK 3 PAGE 1 OF 2** ~~|eee1~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **==> picture [182 x 232] intentionally omitted <==** **----- Start of picture text -----**
D [2] PAK 3
CASE 418B−04
ISSUE L
GENERIC
MARKING DIAGRAM*
xx AYWW
xxxxxxxxG
xxxxxxxxx xxxxxxxxG
AYWW
AWLYWWG AKA
oe
IC Standard Rectifier
xx = Specific Device Code
A = Assembly Location
WL = Wafer Lot
Y = Year
WW = Work Week
G = Pb−Free Package
AKA = Polarity Indicator
**----- End of picture text -----**
DATE 17 FEB 2015 - *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. ## **SOLDERING FOOTPRINT*** **==> picture [147 x 173] intentionally omitted <==** **----- Start of picture text -----**
10.49
8.38
16.155 T L 7
2X
3.504
2X
UE
1.016
5.080
aro
PITCH
DIMENSIONS: MILLIMETERS
**----- End of picture text -----**
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42761B** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: D[2] PAK 3 PAGE 2 OF 2** ~~—~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi’s** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. 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