# Schottky Rectifier, 60 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 750 mV ![Product image](https://novapart.co/image/farnell:9556761/) **URL**: https://novapart.co/products/MBR160RLG/schottky-rectifier-60-v-1-a-single-do-41-204al-2 **SKU**: MBR160RLG **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes **Price**: €0.1140 **Stock**: 1000+ **Lead Time**: 78 days (indicative) ## Description Repetitive Reverse Voltage Vrrm Max:60V; Forward Current If(AV):1A; Diode Configuration:Single; Diode Case Style:DO-41 (DO-204AL); No. of Pins:2Pins; Forward Voltage VF Max:750mV; Forward Surge ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 2Pins | | Product Range | - | | Qualification | - | | Diode Mounting | Through Hole | | Diode Case Style | DO-41 (DO-204AL) | | Diode Configuration | Single | | Forward Voltage Max | 750mV | | Forward Surge Current | 25A | | Average Forward Current | 1A | | Operating Temperature Max | 150°C | | Repetitive Peak Reverse Voltage | 60V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:9556761/) MBR150, MBR160 **MBR160 is a Preferred Device** ## Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. ## **Features** - Low Reverse Current - Low Stored Charge, Majority Carrier Conduction - Low Power Loss/High Efficiency **http://onsemi.com** ## **SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE − 50 AND 60 VOLTS** - Highly Stable Oxide Passivated Junction • These are Pb−Free Devices* **==> picture [469 x 379] intentionally omitted <==** **----- Start of picture text -----**
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 0.4 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds°C Max. for 10 SecondsC Max. for 10 Seconds DO−41
• Polarity: Cathode Indicated by Polarity Band AXIAL LEAD
CASE 59
STYLE 1
MAXIMUM RATINGS
Rating Symbol Value Unit
a Ge /
Peak Repetitive Reverse Voltage VRRM V
MBR150 50
MBR160 60
MARKING DIAGRAM
Working Peak Reverse Voltage VRWM
FET DC Blocking Voltage VR
RMS Reverse Voltage MBR150 VR(RMS) 35 V
MBR160 42
Average Rectified Forward Current (Note 1) IO 1.0 A
ce (VR R(equiv)JA = 80 ° C/W, P.C. Board Mounting, T 0.2 VR(dc), TL = 90 ° C, A = 55 ° C) MBR1x0A
a YYWW
Nonrepetitive Peak Surge Current IFSM 25 A
(Surge applied at rated load conditions, (for one
halfwave, single phase, 60 Hz, TL = 70 ° C) cycle)
ACS
Operating and Storage Junction Temperature TJ, Tstg −65 to ° C
Range (Reverse Voltage Applied) +150
ee THERMAL CHARACTERISTICS (Notes 1 and 2) eee A = Assembly Location
MBR1x0 = Device Code
Characteristic Symbol Max Unit x = 5 or 6
Thermal Resistance, Junction−to−Ambient R JA 80 ° C/W Y = Year
WW = Work Week
Stresses exceeding Maximum Ratings may damage the device. Maximum = Pb−Free Package
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the (Note: Microdot may be in either location)
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## **Mechanical Characteristics:** - Case: Epoxy, Molded - Weight: 0.4 Gram (Approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds°C Max. for 10 SecondsC Max. for 10 Seconds - Polarity: Cathode Indicated by Polarity Band Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.1. Lead Temperature reference is cathode lead 1/32 ″ from case. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2.0%. ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **Preferred** devices are recommended choices for future use and best overall value. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2006 **June, 2006 − Rev. 8** **MBR150/D** **MBR150, MBR160** ## **ELECTRICAL CHARACTERISTICS** (TL = 25 ° C unless otherwise noted) (Note 1) |**ELECTRICAL CHARACTERISTICS**(TL= 25°C unless otherwise noted) (Note 1)|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Max**|**Unit**| |Maximum Instantaneous Forward Voltage (Note 2)
(iF= 0.1 A)
(iF= 1.0 A)
(iF= 3.0 A)|vF|0.550
0.750
1.000|V| |Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2)
(TL= 25°C)
(TL= 100°C)|iR|0.5
5.0|mA| **==> picture [490 x 402] intentionally omitted <==** **----- Start of picture text -----**
10 10
5.0 TJ = 150°C
7.0 TJ = 150°C 100°C 25°C 2.0 125°C
5.0 1.0 100°C
0.5
0.2 75°C
3.0
0.1
2.0 0.05
0.02
0.01
0.005 25°C
1.0
0.002
0.7 0.001
0 10 20 30 40 50 60 70
0.5 VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current*
0.3 *The curves shown are typical for the highest voltage device in the volt-
age grouping. Typical reverse current for lower voltage selections can
0.2 be estimated from these same curves if VR is sufficiently below rated VR.
5.0
0.1 SQUARE
4.0
WAVE
0.07
0.05 3.0
dc
�
0.03 2.0 5
10
0.02 IPK/IAV = 20
1.0
0 0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.0 2.0 3.0 4.0 5.0
vF, INSTANTANEOUS VOLTAGE (VOLTS) IF(AV), AVERAGE FORWARD CURRENT (AMPS)
, REVERSE CURRENT (mA)
IR
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
PF(AV), AVERAGE FORWARD POWER DISSIPATION (WATTS)
**----- End of picture text -----**
**Figure 1. Typical Forward Voltage** **Figure 3. Forward Power Dissipation** **http://onsemi.com** **2** **MBR150, MBR160** ## **THERMAL CHARACTERISTICS** **==> picture [491 x 398] intentionally omitted <==** **----- Start of picture text -----**
1.0
0.7
0.5
0.3 Z�JL(t) = Z�JL • r(t)
0.2
Ppk Ppk DUTY CYCLE, D = tp/t1
0.1 tp PEAK POWER, Ppk, is peak
TIME of an equivalent square
0.07
t1 power pulse.
0.05
�TJL = Ppk • R�JL [D + (1 − D) • r(t1 + tp) + r(tp) − r(t1)] where
0.03 �TJL = the increase in junction temperature above the lead
temperature r(t) = normalized value of transient thermal resistance
0.02
at time, t, from Figure 4, i.e.: r(t) = r(t1 + tp) = normalized value of
0.01 transient thermal resistance at time, t1 + tp.
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k
t, TIME (ms)
Figure 4. Thermal Response
.
90 200
80 BOTH LEADS TO HEATSINK,EQUAL LENGTH TJ = 25°C
f = 1 MHz
70
100
60
80
MAXIMUM
70
50
60
TYPICAL
50
40
40
30
30
20
10 20
0 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1.0 0 10 20 30 40 50 60 70 80 90 100
L, LEAD LENGTH (INCHES) VR, REVERSE VOLTAGE (VOLTS)
(NORMALIZED)
r(t), TRANSIENT THERMAL RESISTANCE
°
C, CAPACITANCE (pF)
JL, THERMAL RESISTANCE,
�
R JUNCTION−TO−LEAD ( C/W)
**----- End of picture text -----**
**Figure 5. Steady−State Thermal Resistance** **Figure 6. Typical Capacitance** ## **NOTE 1. — MOUNTING DATA:** Data shown for thermal resistance junction−to−ambient (R�JA) for the mounting shown is to be used as a typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. **Typical Values for R** � **JA in Still Air** |**ypc**|**a aues or** �**JA n St r**|**a aues or** �**JA n St r**|**a aues or** �**JA n St r**|**a aues or** �**JA n St r**|| |---|---|---|---|---|---| |**Mounting**
**Method**|**Lead Length, L (in)**||||**R**�**JA**| ||**1/8**|**1/4**|**1/2**|**3/4**|| |1|52|65|72|85|°C/W| |2|67|80|87|100|°C/W| |3|—|50|||°C/W| ## **NOTE 2. — THERMAL CIRCUIT MODEL:** (For heat conduction through the leads) **==> picture [197 x 77] intentionally omitted <==** **----- Start of picture text -----**
R�S(A) R�L(A) R�J(A) R�J(K R�L(K) R�S(K)
)
TA(A) PD TA(K)
TL(A) TC(A) TJ TC(K) TL(K)
**----- End of picture text -----**
**http://onsemi.com** **3** **MBR150, MBR160** Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. For a given total lead length, lowest values occur when one side of the rectifier is brought as close as possible to the heatsink. Terms in the model signify: (Subscripts A and K refer to anode and cathode sides, respectively.) Values for thermal resistance components are: R�L = 100°C/W/in typically and 120°C/W/in maximum. R�J = 36°C/W typically and 46°C/W maximum. ## **NOTE 3. — HIGH FREQUENCY OPERATION:** Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 6) TA = Ambient Temperature TC = Case Temperature TL = Lead Temperature TJ = Junction Temperature R�S = Thermal Resistance, Heatsink−to−Ambient R�L = Thermal Resistance, Lead−to−Heatsink R�J = Thermal Resistance, Junction−to−Case PD = Power Dissipation **==> picture [507 x 169] intentionally omitted <==** **----- Start of picture text -----**
Mounting Method 1 Mounting Method 3 capacitance. (See Figure 6)
copper surface.P.C. Board with1−1/2 ″ x 1−1/2 ″ copper surface.P.C. Board with1−1/2 ″ x 1−1/2 ″ operation will be satisfactory up to several megahertz. ForRectification efficiency measurements show that
example, relative waveform rectification efficiency is
L L É L = 3/8″ approximately 70 percent at 2 MHz, e.g., the ratio of dc
É power to RMS power in the load is 0.28 at this frequency,
ÉÉÉÉÉÉÉÉ É whereas perfect rectification would yield 0.406 for sine
É wave inputs. However, in contrast to ordinary junction
BOARD GROUND diodes, the loss in waveform efficiency is not indicative of
Mounting Method 2 PLANE
É power loss: it is simply a result of reverse current flow
L L through the diode capacitance, which lowers the dc output
ÉÉÉÉÉÉÉÉ voltage.
VECTOR PIN MOUNTING
**----- End of picture text -----**
## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Device**|**Package**|**Shipping**†| |MBR150|Axial Lead*|1000 Units / Bag| |MBR150G|Axial Lead*|1000 Units / Bag| |MBR150RL|Axial Lead*|5000 / Tape & Reel| |MBR150RLG|Axial Lead*|5000 / Tape & Reel| |MBR160|Axial Lead*|1000 Units / Bag| |MBR160G|Axial Lead*|1000 Units / Bag| |MBR160RL|Axial Lead*|5000 / Tape & Reel| |MBR160RLG|Axial Lead*|5000 / Tape & Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. **http://onsemi.com 4** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [451 x 350] intentionally omitted <==** **----- Start of picture text -----**
AXIAL LEAD
CASE 59−10
ISSUE U
DATE 15 FEB 2005
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
K D 3. ALL RULES AND NOTES ASSOCIATED WITHJEDEC DO−41 OUTLINE SHALL APPLY
STYLE 1 STYLE 2 4. POLARITY DENOTED BY CATHODE BAND.
F 5. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
A INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.161 0.205 4.10 5.20
SCALE 1:1 OPTIONAL AS NEEDEDPOLARITY INDICATOR(SEE STYLES) F BD 0.0790.028 0.1060.034 2.000.71 2.700.86
F −−− 0.050 −−− 1.27
K K 1.000 −−− 25.40 −−−
GENERIC
te| MARKING DIAGRAM*
A A
STYLE 1: STYLE 2: xxx xxx
PIN 1. CATHODE (POLARITY BAND) NO POLARITY
2. ANODE xxx xxx
4( YYWW GH6G YYWW
STYLE 1 STYLE 2
xxx = Specific Device Code
A = Assembly Location
YY = Year
WW = Work Week
**----- End of picture text -----**
**==> picture [159 x 36] intentionally omitted <==** **----- Start of picture text -----**
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ ”,
may or may not be present.
**----- End of picture text -----**
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