# Schottky Rectifier, 60 V, 10 A, Single, TO-220AC, 2 Pins, 800 mV ![Product image](https://novapart.co/image/farnell:9557385/) **URL**: https://novapart.co/products/MBR1060G/schottky-rectifier-60-v-10-a-single-to-220ac-2 **SKU**: MBR1060G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes **Price**: €0.4840 **Stock**: 500+ **Lead Time**: 412 days (indicative) ## Description Repetitive Reverse Voltage Vrrm Max:60V; Forward Current If(AV):10A; Diode Configuration:Single; Diode Case Style:TO-220AC; No. of Pins:2Pins; Forward Voltage VF Max:800mV; Forward Surge Curren ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 2Pins | | Product Range | - | | Qualification | - | | Diode Mounting | Through Hole | | Diode Case Style | TO-220AC | | Diode Configuration | Single | | Forward Voltage Max | 800mV | | Forward Surge Current | 150A | | Average Forward Current | 10A | | Operating Temperature Max | 175°C | | Repetitive Peak Reverse Voltage | 60V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:9557385/) MBR1060 ## MBR1060 SWITCHMODE Power Rectifiers 7 ## **Features** - Guard−Ring for Stress Protection - Low Forward Voltage - 175°C Operating Junction Temperature - Epoxy Meets UL 94 V−0 @ 0.125 in - Low Power Loss/High Efficiency - High Surge Capacity - Low Stored Charge Majority Carrier Conduction - Pb−Free Packages are Available* ## **Mechanical Characteristics** - Case: Epoxy, Molded - Weight: 1.9 Grams (Approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds - ESD Rating: Human Body Model = 3B Machine Model = C ## **http://onsemi.com** ## **SCHOTTKY BARRIER RECTIFIERS 10 AMPERES, 60 VOLTS** **==> picture [77 x 8] intentionally omitted <==** **----- Start of picture text -----**
3 1, 4
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MARKING
DIAGRAM
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4
Co
TO−220AC AY WWG
CASE 221B B1060
PLASTIC KA
1
3
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
B1060 = Device Code
KA = Diode Polarity
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ORDERING INFORMATION
Device Package Shipping
MBR1060 TO−220 50 Units/Rail
MBR1060G TO−220 50 Units/Rail
(Pb−Free)
———
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> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **MBR1060/D** **1** © Semiconductor Components Industries, LLC, 2009 **December, 2009 − Rev. 11** **MBR1060** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**MBR1060**|**Unit**| |Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage|VRRM
VRWM
VR|60|V| |Average Rectified Forward Current (Rated VR) TC= 133°C|IF(AV)|10|A| |Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC= 133°C|IFRM|20|A| |Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)|IFSM|150|A| |Peak Repetitive Reverse Surge Current (2.0�s, 1.0 kHz)|IRRM|0.5|A| |Operating Junction Temperature (Note 1)|TJ|�65 to +175|°C| |Storage Temperature|Tstg|�65 to +175|°C| |Voltage Rate of Change (Rated VR)|dv/dt|10,000|V/�s| Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R � JA. ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |Maximum Thermal Resistance, Junction−to−Case|R�JC|2.0|°C/W| |Maximum Thermal Resistance, Junction−to−Ambient|R�JA|60|°C/W| |**ELECTRICAL CHARACTERISTICS**|||| |Maximum Instantaneous Forward Voltage (Note 2)
(iF= 10 Amps, TC= 125°C)
(iF= 10 Amps, TC= 25°C)
(iF= 20 Amps, TC= 125°C)
(iF= 20 Amps, TC= 25°C)|vF|0.7
0.8
0.85
0.95|V| |Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TC= 125°C)
(Rated dc Voltage, TC= 25°C)|iR|22
0.10|mA| 2. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. **http://onsemi.com** **2** **MBR1060** **==> picture [490 x 629] intentionally omitted <==** **----- Start of picture text -----**
50 10
TJ = 150°C
20 150°C 1.0 125°C
10
125°C 100°C 0.1 100°C
5.0
3.0
0.01
TJ = 25°C
1.0 0.001
25°C
0.5
0.0001
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 20 40 60 80 100
vF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current
20 20
dc RATED VOLTAGE APPLIEDR�JC = 2°C/W (HEATSINK)R�JA = 16°C/W
15 15 (NO HEATSINK)R�JA = 60°C/W
SQUARE WAVE RATED VOLTAGE
dc
APPLIED
10 10
dc
5.0 5.0
SQUARE WAVE
0 0
80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 180
TC, CASE TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)
Figure 3. Typical Current Derating, Case Figure 4. Typical Current Derating, Ambient
10
9.0 T A = 25°C
8.0
7.0 I PK /I AV = �
6.0
IPK/IAV = 5.0
5.0
IPK/IAV = 10 dc
4.0
IPK/IAV = 20
3.0
SQUARE WAVE
2.0
1.0
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
IF(AV), AVERAGE CURRENT (AMPS)
, REVERSE CURRENT (mA)
IR
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
, AVERAGE FORWARD CURRENT (AMPS)
IF(AV) IF(AV), AVERAGE FORWARD CURRENT (AMPS)
, AVERAGE POWER DISSIPATION (WATTS)
F(AV)
P
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**Figure 5. Forward Power Dissipation** SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. **http://onsemi.com** **3** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [470 x 282] intentionally omitted <==** **----- Start of picture text -----**
TO−220, 2−LEAD
CASE 221B−04
ISSUE F
DATE 12 APR 2013
o
NOTES:
C 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
Q B F T S 2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
SCALE 1:1 4 A 0.595 0.620 15.11 15.75
B 0.380 0.405 9.65 10.29
ae A Lt Bobs, C 0.160 0.190 4.06 4.82
U D 0.025 0.039 0.64 1.00
1 3 F 0.142 0.161 3.61 4.09
H G 0.190 0.210 4.83 5.33
H 0.110 0.130 2.79 3.30
K J 0.014 0.025 0.36 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.14 1.52
Q 0.100 0.120 2.54 3.04
L R 0.080 0.110 2.04 2.79
D R S 0.045 0.055 1.14 1.39
T 0.235 0.255 5.97 6.48
G J U 0.000 0.050 0.000 1.27
STYLE 1: STYLE 2:
PIN 1. CATHODE PIN 1. ANODE
2. N/A 2. N/A
3. ANODE 3. CATHODE
4. CATHODE 4. ANODE
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**DOCUMENT NUMBER: 98ASB42149B DESCRIPTION: TO−220, 2−LEAD** ~~_~~ Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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