# Small Signal Schottky Diode, Dual Isolated, 30 V, 200 mA, 400 mV, 600 mA, 125 °C ![Product image](https://novapart.co/image/farnell:2463402/) **URL**: https://novapart.co/products/MBD54DWT1G/small-signal-schottky-diode-dual-isolated-30-v-200 **SKU**: MBD54DWT1G **Manufacturer**: ONSEMI **Price**: €0.0520 **Stock**: 10+ **Lead Time**: 141 days (indicative) ## Description Diode Configuration:Dual Isolated; Repetitive Reverse Voltage Vrrm Max:30V; Forward Current If(AV):200mA; Forward Voltage VF Max:400mV; Forward Surge Current Ifsm Max:600mA; Operating ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 6Pins | | Product Range | MBD54 | | Qualification | AEC-Q101 | | Diode Mounting | Surface Mount | | Diode Case Style | SOT-363 | | Diode Configuration | Dual Isolated | | Forward Voltage Max | 400mV | | Forward Surge Current | 600mA | | Reverse Recovery Time | 5ns | | Average Forward Current | 200mA | | Operating Temperature Max | 125°C | | Repetitive Peak Reverse Voltage | 30V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2463402/) **Preferred Device** ## MBD54DWT1G ## Dual Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. ## **Features** - Extremely Fast Switching Speed - Low Forward Voltage − 0.35 V @ IF = 10 mAdc - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant **MAXIMUM RATINGS** (TJ = 125 ° C unless otherwise noted) **Rating Symbol Value Unit** Reverse Voltage VR 30 V Forward Power Dissipation PF @ TA = 25 ° C 150 mW Derate above 25 ° C 1.2 mW/ ° C Forward Current (DC) IF 200 Max mA Junction Temperature TJ 125 Max ° C ~~ce,~~ Storage Temperature Range Tstg −55 to +150 ° C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ## **http://onsemi.com** ## **30 VOLTS DUAL HOT−CARRIER DETECTOR AND SWITCHING DIODES** Anode 1 6 Cathode N/C 2 ° ° 5 N/C Cathode 3 4 Anode **MARKING DIAGRAM** 6 **SOT−363 CASE 419B** ~~imi~~ BL M 1 **STYLE 6** 1 imimi M = Date Code = Pb−Free Package (Note: Microdot may be in either location) ## **ORDERING INFORMATION** |**Device**
**Package**
**Shipping**†| |---| |MBD54DWT1G
SOT−363
3000 /| |(Pb−Free)
Tape & Reel| |†For information on tape and reel specifications,| |including part orientation and tape sizes, please| |refer to our Tape and Reel Packaging Specifications| |Brochure, BRD8011/D.| **Preferred** devices are recommended choices for future use and best overall value. Publication Order Number: **MBD54DWT1/D** **1** © Semiconductor Components Industries, LLC, 2009 **October, 2009 − Rev. 7** ## **MBD54DWT1G** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) (EACH DIODE) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise n|oted) (EACH DIO|DE)|||| |---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |Reverse Breakdown Voltage (IR= 10�A)|V(BR)R|30|−|−|V| |Total Capacitance (VR= 1.0 V, f = 1.0 MHz)|CT|−|7.6|10|pF| |Reverse Leakage (VR= 25 V)|IR|−|0.5|2.0|�Adc| |Forward Voltage (IF= 0.1 mAdc)|VF|−|0.22|0.24|Vdc| |Forward Voltage (IF= 30 mAdc)|VF|−|0.41|0.5|Vdc| |Forward Voltage (IF= 100 mAdc)|VF|−|0.52|1.0|Vdc| |Reverse Recovery Time (IF= IR= 10 mAdc, IR(REC)= 1.0 mAdc)
(Figure 1)|trr|−|−|5.0|ns| |Forward Voltage (IF= 1.0 mAdc)|VF|−|0.29|0.32|Vdc| |Forward Voltage (IF= 10 mAdc)|VF|−|0.35|0.40|Vdc| |Forward Current (DC)|IF|−|−|200|mAdc| |Repetitive Peak Forward Current|IFRM|−|−|300|mAdc| |Non−Repetitive Peak Forward Current (t < 1.0 s)|IFSM|−|−|600|mAdc| **==> picture [476 x 177] intentionally omitted <==** **----- Start of picture text -----**
820 �
+10 V 2 k
100 �H IF 0.1 �F tr t p t IF
0.1 �F 10% t rr t
DUT
50 � OUTPUT 50 � INPUT 90%
PULSE SAMPLING iR(REC) = 1 mA
GENERATOR OSCILLOSCOPE VR IR OUTPUT PULSE
INPUT SIGNAL
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 k� variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
**----- End of picture text -----**
**Figure 1. Recovery Time Equivalent Test Circuit** **http://onsemi.com** **2** ## **MBD54DWT1G** **==> picture [490 x 174] intentionally omitted <==** **----- Start of picture text -----**
100 1000
TA = 150°C
100
T A = 125°C
10 1�50°C 10
1.0
1�25°C T A = 85°C
1.0 0.1
85°C
25°C -�40°C -�55°C 0.01
TA = 25 ° C
0.1 0.001
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 30
VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)
A)
μ
IR, REVERSE CURRENT (
IF, FORWARD CURRENT (mA)
**----- End of picture text -----**
**Figure 2. Forward Voltage** **Figure 3. Leakage Current** **==> picture [239 x 171] intentionally omitted <==** **----- Start of picture text -----**
14
12
10
8
6
4
2
0
0 5 10 15 20 25 30
VR, REVERSE VOLTAGE (VOLTS)
CT, TOTAL CAPACITANCE (pF)
**----- End of picture text -----**
**Figure 4. Total Capacitance** **http://onsemi.com** **3** **MBD54DWT1G** ## **PACKAGE DIMENSIONS** **SC−88 (SOT−363)** CASE 419B−02 ISSUE W **==> picture [429 x 449] intentionally omitted <==** **----- Start of picture text -----**
D
NOTES:
e 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
6 5 4 MILLIMETERS INCHES
HE −E− DIMA 0.80 MIN NOM 0.95 MAX 1.10 0.031 MIN 0.037 NOM 0.043 MAX
A1 0.00 0.05 0.10 0.000 0.002 0.004
1 2 3
A3 0.20 REF 0.008 REF
b 0.10 0.21 0.30 0.004 0.008 0.012
i C 0.10 0.14 0.25 0.004 0.005 0.010
D 1.80 2.00 2.20 0.070 0.078 0.086
“a b 6 PL ———— E 1.15 1.25 1.35 0.045 0.049 0.053
e 0.65 BSC 0.026 BSC
0.2 (0.008) M E M L 0.10 0.20 0.30 0.004 0.008 0.012
= HE 2.00 2.10 2.20 0.078 0.082 0.086
A3 STYLE 6:
_ PIN 1. ANODE 2
2. N/C
C 3. CATHODE 1
A 4. ANODE 1
5. N/C
6. CATHODE 2
Mt, ‘so
L A1 L J it
SOLDERING FOOTPRINT*
0.50
— 0.0197
0.65
—4-l--f6
0.025
0.65
0.025
0.40
0.0157
5 a]
HE
a 1.9
0.0748 SCALE 20:1 mm
(I) inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
**----- End of picture text -----**
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