# Small Signal Schottky Diode, Dual Isolated, 30 V, 10 mA, 450 mV, 125 °C ![Product image](https://novapart.co/image/farnell:2844893/) **URL**: https://novapart.co/products/MBD330DWT1G/small-signal-schottky-diode-dual-isolated-30-v-10 **SKU**: MBD330DWT1G **Manufacturer**: ONSEMI **Price**: €0.0460 **Stock**: 10+ **Lead Time**: 113 days (indicative) ## Description Diode Configuration:Dual Isolated; Repetitive Reverse Voltage Vrrm Max:30V; Forward Current If(AV):10mA; Forward Voltage VF Max:450mV; Forward Surge Current Ifsm Max:-; Operating Te ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 6Pins | | Product Range | - | | Qualification | - | | Diode Mounting | Surface Mount | | Diode Case Style | SOT-363 | | Diode Configuration | Dual Isolated | | Forward Voltage Max | 450mV | | Forward Surge Current | - | | Reverse Recovery Time | - | | Average Forward Current | 10mA | | Operating Temperature Max | 125°C | | Repetitive Peak Reverse Voltage | 30V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2844893/) ## MBD110DWT1G, MBD330DWT1G ## Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and reduces board space by putting two discrete devices in one small six−leaded package. The SOT−363 is ideal for low−power surface mount applications where board space is at a premium, such as portable products. **Surface Mount Comparisons:** **SOT−363 SOT−23** Area (mm[2] ) 4.6 7.6 Max Package PD (mW) 120 225 Device Count 2 1 ~~=~~ **Space Savings: Package 1 x SOT−23 2 x SOT−23** SOT−363 40% 70% ~~——~~ The MBD110DW and MBD330DW devices are spin−offs of our popular MMBD101LT1 and MMBD301LT1 SOT−23 devices. They are designed for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. ## **Features** - Extremely Low Minority Carrier Lifetime - Very Low Capacitance - Low Reverse Leakage - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **MAXIMUM RATINGS** |**Rating**|**Symbol**|**Value**|**Unit**| |---|---|---|---| |Reverse Voltage
MBD110DWT1G
MBD330DWT1G|VR|7.0
30|V| |Forward Current (DC)
MBD330DWT1G|IF|200 Max|mA| |Forward Power Dissipation TA= 25°C|PF|120|mW| |Junction Temperature|TJ|−55 to +125|°C| |Storage Temperature Range|Tstg|−55 to +150|°C| **http://onsemi.com** **==> picture [128 x 149] intentionally omitted <==** **----- Start of picture text -----**
Anode 1 6 Cathode
N/C 2 5 N/C
Cathode 3 er 4 Anode
1
SC−88 / SOT−363
CASE 419B
STYLE 6
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## **MARKING DIAGRAM** **==> picture [147 x 125] intentionally omitted <==** **----- Start of picture text -----**
6
xx M
1
xx = Device Code
Refer to Ordering Table,
page 2
M = Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
**----- End of picture text -----**
## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Publication Order Number: **MBD110DWT1/D** **1** © Semiconductor Components Industries, LLC, 2012 **September, 2012 − Rev. 8** ## **MBD110DWT1G, MBD330DWT1G** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||| |---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |Reverse Breakdown Voltage
(IR= 10�A)
MBD110DWT1G
MBD330DWT1G|V(BR)R|7.0
30|10
−|−
−|V| |Diode Capacitance
(VR= 0, f = 1.0 MHz, Note 1)
MBD110DWT1G|CD|−|0.88|1.0|pF| |Total Capacitance
(VR= 15 Volts, f = 1.0 MHz)
MBD330DWT1G|CT|−|0.9|1.5|pF| |Reverse Leakage
(VR= 3.0 V)
MBD110DWT1G
(VR= 25 V)
MBD330DWT1G|IR|−
−|0.02
13|0.25
200|�A
nA| |Noise Figure
(f = 1.0 GHz, Note 2)
MBD110DWT1G|NF|−|6.0|−|dB| |Forward Voltage
(IF= 10 mA)
MBD110DWT1G
(IF= 1.0 mA)
MBD330DWT1G
(IF= 10 mA)|VF|−
−
−|0.5
0.38
0.52|0.6
0.45
0.6|V| |**ORDERING INFORMATION**|||| |---|---|---|---| |**Device**|**Marking**|**Package**|**Shipping**†| |MBD110DWT1G|M4|SC−88 / SOT−363
(Pb−Free)|3000 Units / Tape & Reel| |MBD330DWT1G|T4||| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **http://onsemi.com** **2** **MBD110DWT1G, MBD330DWT1G** ## **TYPICAL CHARACTERISTICS MBD110DWT1G** **==> picture [486 x 170] intentionally omitted <==** **----- Start of picture text -----**
1.0 100
0.7
0.5
VR = 3.0 V
0.2 10
TA = 85°C TA = -�40°C
0.1
0.07
0.05
1.0
TA = 25°C
0.02
MBD110DWT1G MBD110DWT1G
0.01 0.1
30 40 50 60 70 80 90 100 110 120 130 0.3 0.4 0.5 0.6 0.7 0.8
TA, AMBIENT TEMPERATURE (°C) VF, FORWARD VOLTAGE (VOLTS)
�
, REVERSE LEAKAGE ( A) , FORWARD CURRENT (mA)
IR IF
**----- End of picture text -----**
**Figure 1. Reverse Leakage** **Figure 2. Forward Voltage** **==> picture [485 x 170] intentionally omitted <==** **----- Start of picture text -----**
1.0 11
10 LOCAL OSCILLATOR FREQUENCY = 1.0 GHz
9 (Test Circuit Figure 5)
0.9
8
7
0.8 6
5
4
0.7
3
MBD110DWT1G 2 MBD110DWT1G
0.6 1
0 1.0 2.0 3.0 4.0 0.1 0.2 0.5 1.0 2.0 5.0 10
VR, REVERSE VOLTAGE (VOLTS) PLO, LOCAL OSCILLATOR POWER (mW)
CD,CAPACITANCE (pF) NF, NOISE FIGURE (dB)
**----- End of picture text -----**
**Figure 3. Capacitance** **Figure 4. Noise Figure** **==> picture [220 x 146] intentionally omitted <==** **----- Start of picture text -----**
LOCAL
OSCILLATOR
UHF DIODE IN
NOISE SOURCE TUNED
H.P. 349A MOUNT
NOISE IF AMPLIFIER
FIGURE METER NF = 1.5 dB
H.P. 342A f = 30 MHz
**----- End of picture text -----**
## **NOTES ON TESTING AND SPECIFICATIONS** - Note 1 − CD and CT are measured using a capacitance bridge (Boonton Electronics Model 75A or equivalent). - Note 2 − Noise figure measured with diode under test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz. The LO power is adjusted for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see Figure 5. - Note 3 − LS is measured on a package having a short instead of a die, using an impedance bridge (Boonton Radio Model 250A RX Meter). **Figure 5. Noise Figure Test Circuit** **http://onsemi.com** **3** **MBD110DWT1G, MBD330DWT1G** ## **TYPICAL CHARACTERISTICS MBD330DWT1G** **==> picture [239 x 170] intentionally omitted <==** **----- Start of picture text -----**
2.8
MBD330DWT1G
2.4 f = 1.0 MHz
2.0
1.6
1.2
0.8
0.4
0
0 3.0 6.0 9.0 12 15 18 21 24 27 30
VR, REVERSE VOLTAGE (VOLTS)
, TOTAL CAPACITANCE (pF)
CT
**----- End of picture text -----**
**Figure 6. Total Capacitance** **==> picture [236 x 170] intentionally omitted <==** **----- Start of picture text -----**
500
MBD330DWT1G
400
KRAKAUER METHOD
300
200
100
0
0 10 20 30 40 50 60 70 80 90 100
IF, FORWARD CURRENT (mA)
, MINORITY CARRIER LIFETIME (ps)
�
**----- End of picture text -----**
**Figure 7. Minority Carrier Lifetime** **==> picture [487 x 171] intentionally omitted <==** **----- Start of picture text -----**
10 100
MBD330DWT1G MBD330DWT1G
1.0 TA = 100°C TA = -�40°C
10
TA = 75°C TA = 85°C
0.1
0.01 TA = 25°C 1.0 TA = 25°C
0.001 0.1
0 6.0 12 18 24 30 0.2 0.4 0.6 0.8 1.0 1.2
VR, REVERSE VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS)
�
, REVERSE LEAKAGE ( A) , FORWARD CURRENT (mA)
IR IF
**----- End of picture text -----**
**Figure 8. Reverse Leakage** **Figure 9. Forward Voltage** **http://onsemi.com** **4** **MBD110DWT1G, MBD330DWT1G** ## **PACKAGE DIMENSIONS** **==> picture [429 x 476] intentionally omitted <==** **----- Start of picture text -----**
SC−88 / SC−70 / SOT−363
CASE 419B−02
ISSUE W
D
NOTES:
e 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
6 5 4
MILLIMETERS INCHES
HE −E− DIMA 0.80 MIN NOM 0.95 MAX 1.10 0.031 MIN 0.037 NOM 0.043 MAX
1 2 3 A1 0.00 0.05 0.10 0.000 0.002 0.004
A3 0.20 REF 0.008 REF
b 0.10 0.21 0.30 0.004 0.008 0.012
rineg : C 0.10 0.14 0.25 0.004 0.005 0.010
D 1.80 2.00 2.20 0.070 0.078 0.086
=r b 6 PL pt E 1.15 1.25 1.35 0.045 0.049 0.053
0.2 (0.008) M E M Le 0.10 0.65 BSC0.20 0.30 0.0040.026 BSC0.008 0.012
A3 —<—— HE 2.00 2.10 2.20 0.078 0.082 0.086
STYLE 6:
i
PIN 1. ANODE 2
C 2. N/C
3. CATHODE 1
A 4. ANODE 1
5. N/C
6. CATHODE 2
(im; = 'J-n
L A1 L J it
SOLDERING FOOTPRINT*
0.50
4 0.0197
0.65
—5-—|--f&
0.025
0.65
0.025
0.40
0.0157
eee
Te
|
1.9
0.0748 SCALE 20:1 mm
inches
-—__ _+ (—)
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
**----- End of picture text -----**
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