# Triac, 800 V, 8 A, TO-220AB, 1.5 V, 80 A, 40 mA

![Product image](https://novapart.co/image/farnell:2317532/)

**URL**: https://novapart.co/products/MAC8NG/triac-800-v-8-a-to-220ab-15-80-40-ma
**SKU**: MAC8NG
**Manufacturer**: LITTELFUSE
**Price**: €0.5930
**Stock**: 10+
**Lead Time**: 92 days (indicative)

## Description

Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current IT(rms):8A; Triac Case Style:TO-220AB; Gate Trigger Current Max (QI), Igt:35mA; Gate Trigger Voltage Max Vgt:1.5V; Pe

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (15-Jan-2018) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Triac Case Style | TO-220AB |
| Thyristor Mounting | Through Hole |
| Holding Current Max | 40mA |
| On State Rms Current | 8A |
| Peak On State Voltage | 1.6V |
| Gate Trigger Voltage Max | 1.5V |
| Operating Temperature Max | 125°C |
| Peak Non Repetitive Surge Current | 80A |
| Peak Repetitive Off State Voltage | 800V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2317532/)

Thyristors **Datasheet** 

**MAC8DG, MAC8MG, MAC8NG** Surface Mount – 400V -800V 

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RoHS Pb<br>**----- End of picture text -----**<br>


## **Description** 

Designed for high performance full−wave ac control applications where high noise immunity and high commutating di/dt are required. The MAC8xG series is designed for high performance full-wave AC control applications where high noise immunity and high commutating di/dt are required. 

## **Features** 

   - Industry Standard TO−220 Package 

- Blocking Voltage to 800 Volts 

- On−State Current Rating of 8.0 Amperes RMS at 100°C ■ High Commutating di/dt − 6.5 A/ms minimum at 125°C 

- Uniform Gate Trigger Currents in Three Quadrants ■ These Devices are Pb−Free and are RoHS Compliant 

- High Immunity to dv/dt − 250 V/µs minimum at 125°C 

- Minimizes Snubber Networks for Protection 

## **Additional Information** 

## **Functional Diagram** 

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MT 2 MT 1<br>G<br>**----- End of picture text -----**<br>


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Resources Accessories Samples<br>**----- End of picture text -----**<br>


## **Pin Out** 

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CASE 221A<br>STYLE 4<br>1 2<br>**----- End of picture text -----**<br>


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© 2021 Littelfuse, Inc.<br>1 Specifications are subject to change without notice.<br>or<br>**----- End of picture text -----**<br>


© 2021 Littelfuse, Inc. **1** Specifications are subject to change without notice. Revised: GD. 02/19/21 

Thyristors **Datasheet** 

**MAC8DG, MAC8MG, MAC8NG** Surface Mount – 400V -800V 

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## **Maximum Ratings  (TJ = 25°C unless otherwise noted)** 

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Rating Symbol Value Unit<br>MAC8DG 400<br>Peak Repetitive Off-State Voltage (Note 1) MAC8MG VDRM, 600 V<br>(Gate Open, Sine Wave 50 to 60 Hz, TJ = -40° to 125°C) MAC8NG  VRRM 800<br>On-State RMS Current  (Full Cycle Sine Wave, 60 Hz, TC = 100°C) IT  (RMS)  8.0 A<br>Peak Non-Repetitive Surge Current<br>(One Full Cycle Sine Wave, 60 Hz, TC= 125°C) ITSM 80 A<br>Circuit Fusing Consideration (t = 8.3 ms) I [2] t 26 A²sec<br>Peak Gate Power  (Pulse Width ≤ 1.0 µs, TC = 80°C) PGM 16 W<br>Average Gate Power (t=8.3ms, TJ = 80°C) PG(AV) 0.35 W<br>Operating Junction Temperature Range TJ -40 to +125 °C<br>Storage Temperature Range Tstg -40 to +150 °C<br>Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the<br>Recommended Operating Conditions may affect device reliability.<br>1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages DRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages  and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages<br>shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.<br>Thermal Characteristics<br>Rating Symbol Value Unit<br>Thermal Resistance, Junction−to−Case (AC) R Ɵ JC 2.2 °C/W<br>Junction−to−Ambient R Ɵ JA 62.5<br>Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds TL 260 °C<br>**----- End of picture text -----**<br>


Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages DRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages  and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 

**Electrical Characteristics - OFF** (TJ = 25°C unless otherwise noted ; Electricals apply in both directions) 

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Characteristic Symbol Min Typ Max Unit<br>Peak Repetitive Blocking Current TJ = 25°C IDRM,  - - 0.01 mA<br>(VD = VDRM = VRRM; Gate Open) TJ = 125°C IRRM - - 2.0<br>**----- End of picture text -----**<br>


**Electrical Characteristics - ON** (TJ = 25°C unless otherwise noted; Electricals apply in both directions) 

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Characteristic Symbol Min Typ Max Unit<br>Peak On−State Voltage (Note 4) (ITM = ±6.0 A) VTM − 1.3 1.6 V<br>MT2(+), G(+) 5.0 13 35.0<br>Gate Trigger Current<br>(Continuous dc)  MT2(+), G(−) IGT 5.0 16 35.0 mA<br>(VD = 12 V, RL = 100 Ω) MT2(−), G(−) 5.0 18 35.0<br>Holding Current (VD = 12 V, Gate Open, Initiating Current = ±150 mA)) IH – 20 40 mA<br>Latching Current  MT2(+), G(+) _ 20 50<br>(VD = 24 V, IG = 35 mA) MT2(+), G(−) IL _ 30 80 mA<br>MT2(−), G(−) _ 20 50<br>MT2(+), G(+) 0.5 0.69 1.5<br>Gate Trigger Voltage<br>(VD = 12 V, RL = 100 Ω) MT2(+), G(−) VGT 0.5 0.77 1.5 V<br>MT2(−), G(−) 0.5 0.72 1.5<br>MT2(+), G(+) 0.2 − −<br>Gate Non−Trigger Voltage<br>(TJ = 125°C)  MT2(+), G(−) VGD 0.2 − − V<br>(VD = 12 V, RL = 100 Ω) MT2(−), G(−) 0.2 − −<br>**----- End of picture text -----**<br>


**2.** Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. 

© 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 02/19/21 

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Thyristors **Datasheet** 

**MAC8DG, MAC8MG, MAC8NG** Surface Mount – 400V -800V 

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## **Dynamic Characteristics** 

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Characteristic Symbol Min Typ Max Unit<br>Rate of Change of Commutating Current See Figure 10.(VD = 400 V, ITM =<br>4.4 A, Commutating dv/dt = 18 V/µs,Gate Open, TJ = 125°C, f = 250 Hz, No  (dv/dt)c 6.5 − − A/ms<br>Snubber) C L  = 10 µF L L  = 40 mH<br>Critical Rate of Rise of Off-State Voltage dV/dt 250 − − V/µs<br>(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)<br>**----- End of picture text -----**<br>


## **Voltage Current Characteristic of SCR** 

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Symbol Parameter<br>VDRM Peak Repetitive Forward Off State Voltage<br>IDRM Peak Forward Blocking Current<br>VRRM Peak Repetitive Reverse Off State Voltage<br>IRRM Peak Reverse Blocking Current<br>VTM Maximum On State Voltage<br>IH Holding Current<br>**----- End of picture text -----**<br>


## **Quadrant Definitions for a Triac** 

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MT2 POSITIVE<br>(Positive Half Cycle)<br>+<br>(+) MT 2 (+) MT 2<br>Quadrant II ( ) IGT (+) IGT Quadrant I<br>GA TE GA TE<br>MT 1 MT 1<br>RE F RE F<br>IGT +I GT<br>( ) MT 2 ( ) MT 2<br>Quadrant III ( ) IGT (+) IGT Quadrant IV<br>GA TE GA TE<br>MT 1 MT 1<br>RE F RE F<br>MT2 NEGA TIVE<br>(Negative Half Cycle)<br>**----- End of picture text -----**<br>


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+C urrent<br>Quadrant 1<br>Main Terminal 2 +<br>V TM<br>on stat e<br>IH<br>IRR M at VRR M<br>off stat e +V oltage<br>IH IDR M at VDR M<br>Quadrant 3Main Terminal 2  V TM<br>**----- End of picture text -----**<br>


All polarities are referenced to MT1. With in phase signals (using standard AC lines) quadrants I and III are used 

© 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 02/19/21 

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Thyristors **Datasheet** 

**MAC8DG, MAC8MG, MAC8NG** Surface Mount – 400V -800V 

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**Figure 1. RMS Current Derating** 

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125<br>120<br>α = 120, 90, 60, 30°<br>115<br>α = 180°<br>110<br>DC<br>105<br>100<br>0          1            2            3          4            5           6            7           8<br>IT(RMS)<br>°<br>TC, CASE TEMPERATURE (C )<br>**----- End of picture text -----**<br>


**Figure 3. On−State Characteristics** 

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## **Figure 2. On-State Power Dissipation** 

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12<br>DC<br>10<br>180°<br>8<br>120°<br>6<br>60°<br>4<br>90°<br>α = 30°<br>2<br>0<br>0          1            2            3          4            5           6            7           8<br>IT(RMS)<br>Figure 4. Thermal Response<br>1<br>0.1<br>0.0 1<br>0.1 1 10 100 1000 4<br>t, TIME (ms)<br>PAV, AVERAGE POWER (WATTS)<br>r(t), TRANSIENT THERMAL RESISTANCE                      (NORMALIZED)<br>**----- End of picture text -----**<br>


**Figure 5. Hold Current Variation** 

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40<br>35<br>30<br>MT2 POSITIVE<br>25<br>20<br>15<br>MT2 NEGATIVE<br>10<br>5<br>10 90 0<br>TJ, JUNCTION TEMPERATURE (°C)<br>IH, HOLD CURRENT (mA)<br>**----- End of picture text -----**<br>


© 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 02/19/21 

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Thyristors **Datasheet** 

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## **MAC8DG, MAC8MG, MAC8NG** Surface Mount – 400V -800V 

**Figure 6. Gate Trigger Current Variation** 

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**Figure 7.  Gate Trigger Voltage Variation** 

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**Figure 8. Critical Rate of Rise of Off-State Voltage (Exponential)** 

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**Figure 9. Critical Rate of Rise of CommutatingVoltage** 

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100<br>TJ = 125°C 100°C 75°C<br>10<br>1<br>f =<br>tw 2 tw<br>VDRM (di/dt)c = 6f I1000TM<br>1<br>10 15 20 25 30 35 40 45 50 55 60<br>(di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)<br>)<br>(V/sµ<br>, CRITICAL RATE OF RISE OF<br>c<br>COMMUTATING VOLTAGE<br>(dv/dt)<br>**----- End of picture text -----**<br>


**Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)** 

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LL 1N4007<br>200 VRMS<br>ADJUST FOR MEASURE<br>ITM, 60 Hz VAC I<br>CHARGE<br>CHARGE TRIGGER CONTROL - 200 V<br>+<br>MT2<br>1N914 51<br>MT1<br>G<br>CL<br>TRIGGER CONTROL<br>**----- End of picture text -----**<br>


**Note:** Component values are for verification of rated (di/dt)c. See AN1048 for additional information 

© 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 02/19/21 

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Thyristors **Datasheet** 

**MAC8DG, MAC8MG, MAC8NG** Surface Mount – 400V -800V 

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## **Dimensions** 

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SEATING<br>PLANE<br>B F C<br>T<br>S<br>4<br>Q A<br>12 3 U<br>H<br>K<br>Z<br>L R<br>V J<br>G<br>D<br>N<br>**----- End of picture text -----**<br>


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Inches Millimeters<br>Dim<br>Min Max Min Max<br>A 0.590 0.620 14.99 15.75<br>B 0.380 0.420 9.65 10.67<br>C 0.178 0.188 4.52 4.78<br>D 0.025 0.035 0.64 0.89<br>F 0.142 0.147 3.61 3.73<br>G 0.095 0.105 2.41 2.67<br>H 0.110 0.130 2.79 3.30<br>J 0.018 0.024 0.46 0.61<br>K 0.540 0.575 13.72 14.61<br>L 0.060 0.075 1.52 1.91<br>N 0.195 0.205 4.95 5.21<br>Q 0.105 0.115 2.67 2.92<br>R 0.085 0.095 2.16 2.41<br>S 0.045 0.060 1.14 1.52<br>T 0.235 0.255 5.97 6.47<br>U 0.000 0.050 0.00 1.27<br>V 0.045 --- 1.15 ---<br>Z --- 0.080 --- 2.04<br>**----- End of picture text -----**<br>


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## **Part Marking System** 

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4<br>MAC8xG<br>YMAXX<br>TO 220AB<br>CASE 221A<br>1 2 3 STYLE 12<br>x =D, M, or N<br>Y =Year<br>M =Month<br>A =Assembly Site<br>XX =Lot Serial Code<br>G =Pb-Free Package<br>**----- End of picture text -----**<br>


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Pin Assignment<br>1 Main Terminal 1<br>2 Main Terminal 2<br>3 Gate<br>4 No Connection<br>**----- End of picture text -----**<br>


## **Ordering Information** 

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Device Package Shipping<br>MAC8DG<br>TO-220AB<br>MAC8MG 1000 Units / Box<br>(Pb-Free)<br>MAC8NG<br>**----- End of picture text -----**<br>


**1.** Dimensioning and tolerancing per ansi y14.5m, 1982. 

**2.** Controlling dimension: inch. 

**3.** Dimension z defines a zone where all body and lead irregularities are allowed. 

**Disclaimer Notice** - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications.  Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics. 

© 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 02/19/21 

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---

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