# Silicon Carbide Schottky Diode, Single, 1.2 kV, 55 A, 125 nC, TO-220

![Product image](https://novapart.co/image/farnell:4125763/)

**URL**: https://novapart.co/products/LSIC2SD120A20A/silicon-carbide-schottky-diode-single-12-kv-55-a
**SKU**: LSIC2SD120A20A
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €9.1100
**Stock**: 1000+
**Lead Time**: 211 days (indicative)

## Description

Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 2 Pin |
| Product Range | - |
| Qualification | AEC-Q101 |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-220 |
| Diode Configuration | Single |
| Average Forward Current | 55A |
| Total Capacitive Charge | 125nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 1.2kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4125763/)

LSIC2SD120A20A 

Silicon Carbide Schottky Diode Datasheet 

## LSIC2SD120A20A 

1200 V, 20 A SiC Schottky Barrier Diode 

## Product Summary 

|Characteristic|Value|Unit|
|---|---|---|
|VRRM|1200|V|
|IF(TC<br>135 °C)<br>QC(VR: 0<br>800 V)<br>-|26<br>125|A<br>nC|



## Features 

- AEC-Q101 qualified 

- Positive temperature coefficient for safe operation and ease of paralleling 

- 175 °C maximum operating junction temperature 

## Agency Approvals and Environmental 

**==> picture [87 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
Environmental Approvals<br>**----- End of picture text -----**<br>


- Excellent surge capability 

- Extremely fast, temperature-independent switching behavior 

- Dramatically reduced switching losses compared to Si bipolar diodes 

- RoHS compliant, lead-free, and halogen-free 

## Circuit Diagram TO-220-2L 

## Applications 

- Boost diodes in PFC or DC/DC stages 

- Switch-mode power supplies 

- Solar inverters 

- Uninterruptable power supplies 

- Industrial motor drives 

- Battery chargers 

- High speed rectifier 

1 

Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc. ~~oS~~ Revised: 10/12/2021 

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LSIC2SD120A20A 

Silicon Carbide Schottky Diode Datasheet 

1. Maximum Ratings ........................................................................................................................................... 3 2. Thermal Characteristics .................................................................................................................................. 3 3. Electrical Characteristics (TJ = 25 °C unless otherwise specified) ................................................................. 3 4. Performance Curves ....................................................................................................................................... 4 5. Diode VF Model for Simulation ....................................................................................................................... 5 6. Package Dimensions ...................................................................................................................................... 6 7. Part Numbering and Marking .......................................................................................................................... 6 8. Packing Options .............................................................................................................................................. 6 9. Packing Specifications .................................................................................................................................... 7 

2 

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LSIC2SD120A20A 

Silicon Carbide Schottky Diode Datasheet 

## 1. Maximum Ratings 

|Characteristic|Symbol|Conditions|Value|Unit|
|---|---|---|---|---|
|Repetitive Peak Reverse Voltage|VRRM<br>~~a~~|-<br>~~ee~~|1200<br>~~ee~~<br>~~ee~~|V<br>~~ee~~|
|DC Blocking Voltage|VR<br>~~a ee~~|-<br>~~ee~~|1200<br>~~ee~~<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~|
|Continuous Forward Current|IF<br>~~a~~<br>~~a~~|TC= 25 °C<br>~~ee~~|55<br>~~ee~~<br>~~ee~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|||TC= 135 °C<br>~~ee~~<br>|26<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>||
|||TC= 149 °C<br>~~ee~~<br>~~es~~<br><br>|20<br>~~ee~~<br>~~es~~<br>~~ee~~<br><br>~~ee~~<br>||
|Non-repetitive Forward Surge Current|IFSM<br>~~a ee~~<br>~~a~~|TC= 25 °C, tp= 10 ms, Half sine pulse<br>~~es~~<br>~~ee~~<br>|145<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|A<br>~~ee~~<br>~~ee~~|
|I2t|2dt<br>~~a ee~~<br>~~a~~|TC= 25 °C, tp= 10 ms, Half sine pulse<br>~~ee~~<br>~~ee~~|105<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|A2s<br>~~ee~~<br>~~ee~~|
|Power Dissipation|PTot<br>~~ee~~|TC= 25 °C<br>~~ee~~<br>~~ee~~|250<br>~~ee~~<br>~~eee~~|W<br>~~eee~~|
|||TC= 110 °C<br>~~ee~~<br>~~ee~~|108<br>~~ee~~<br>~~eee~~||
|Operating Junction Temperature|TJ<br>~~ee~~<br>~~a~~|-<br>~~ee~~|-55 to 175<br>~~eee~~<br>~~ee~~|°C<br>~~eee~~|
|Storage Temperature|TSTG<br>~~ee~~<br>~~a~~<br>~~a~~|-<br>~~ee ~~<br>~~ee~~|-55 to 150<br> ~~eee~~<br>~~ee~~<br>~~ee~~|°C<br>~~eee~~|
|Lead Temperature for Soldering|TSOLD<br>~~a ~~<br>~~a~~<br>~~ee~~|-<br> ~~ee~~<br>~~|~~<br>|260<br>~~ee~~<br>~~ee~~<br>~~|~~<br>|°C|
|Mounting Torque|MD<br>~~a~~<br>~~ee~~|M3 or 6-32 screw<br>~~|~~<br>~~ee~~|1.0<br>~~ee~~<br>~~|~~<br>~~ee~~|Nm|
||||8.8<br>~~|~~<br>~~ee~~|in-lb|



## 2. Thermal Characteristics 

|Characteristic|Symbol|Value|Unit|
|---|---|---|---|
|Maximum Thermal Resistance|Rth,JC, max|0.6|°C/W|



## 3. Electrical Characteristics (TJ = 25 °C unless otherwise specified) 

|Characteristic|Symbol<br>~~fp~~|Conditions<br>~~fp~~|Value<br>~~Po~~|Value<br>~~Po~~|Value<br>~~Po~~|Unit|
|---|---|---|---|---|---|---|
||||Min<br>~~fp~~|Typ|Max||
|Forward Voltage|VF<br>~~fp~~|IF= 20 A, TJ= 25 °C<br>~~fp~~|-<br>~~fp~~|1.5|1.8|V|
|||IF= 20 A, TJ= 175 °C<br>~~fp~~<br>~~ee~~|-<br>~~fp~~<br>~~ee~~|2.1<br>~~ee~~|-<br>~~ee~~||
|Reverse Current|IR<br>~~fp~~<br>~~fd~~|VR= 1200 V, TJ= 25 °C<br>~~fp~~<br>~~ee~~<br>~~fd~~|-<br>~~fp~~<br>~~ee~~<br>~~fd~~<br>~~ee~~|<1<br>~~ee~~<br>~~fd~~<br>~~ee~~|100<br>~~ee~~<br>~~fd~~|µA|
|||VR= 1200 V, TJ= 175 °C<br>~~fd~~<br>~~es~~|-<br>~~fd~~<br>~~es~~<br>~~ee~~|8<br>~~fd~~<br>~~es~~<br>~~ee~~|-<br>~~fd~~<br>~~es~~||
|Total Capacitance|C<br>~~fd~~|VR= 1 V, f = 1 MHz<br>~~fd~~<br>~~es~~<br>~~ee~~|-<br>~~fd~~<br>~~es~~<br>~~ee ~~<br>~~ee~~|1310<br>~~fd~~<br>~~es~~<br> ~~ee~~<br>~~ee~~|-<br>~~fd~~<br>~~es~~<br>~~ee~~|pF|
|||VR= 400 V, f = 1 MHz<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|120<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~||
|||VR= 800 V, f = 1 MHz<br>~~ee~~<br>~~a~~|-<br>~~ee~~<br>~~a~~|86<br>~~ee~~<br>~~a~~|-<br>~~ee~~<br>~~a~~||
|Total Capacitive Charge|QC<br>~~a ee~~|VR= 800 V, QC=<br>C(V) dV<br>~~a~~<br>~~ee~~|-<br>~~a~~<br>~~ee~~|125<br>~~a~~<br>~~ee~~|-<br>~~a~~<br>~~ee~~|nC|
|Capacitance Stored Energy|EC<br>~~a ee~~<br>~~a~~|VR= 800 V<br>~~ee~~|~~ee~~|28<br>~~ee~~|~~ee~~|µJ|



3 

Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc. Revised: 10/12/2021 ~~ee~~ 

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LSIC2SD120A20A 

Silicon Carbide Schottky Diode Datasheet 

## 4. Performance Curves 

Figure 1. Typical Forward Characteristics 

Figure 2. Typical Reverse Characteristics 

**==> picture [440 x 579] intentionally omitted <==**

**----- Start of picture text -----**<br>
40 1E-4<br>35<br>30 TJ = 25 °C-55 °C y Ne 175 °C 1E-5<br>25<br>150 °C 175 °C<br>20 1E-6<br>15 125 °C =<br>150 °C<br>10 1E-7<br>125 °C<br>5 < <w TJ = 25 °C a<br>0 1E-8 Lo y<br>0 0.5 1 1.5 2 2.5 3 3.5 4 200 400 600 800 1000 1200<br>Forward Voltage, VF (V) Reverse Voltage, VR (V)<br>Figure 4. Current Derating<br>300 200<br>180<br>250 10% Duty<br>160 30% Duty<br>50% Duty<br>200 140 70% Duty<br>DC<br>120<br>150 100<br>80<br>100<br>60<br>40<br>50<br>20<br>0 0<br>-50 -25 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>Case Temperature, TC ( ° C) Case Temperature, TC (°C)<br>Figure 5. Capacitance vs. Reverse Voltage  Figure 6. Capacitive Charge vs. Reverse Voltage<br>1400 160<br>1200 140<br>120<br>1000<br>100<br>800<br>80<br>600<br>60<br>400<br>40<br>f = 1 MHz<br>200 20<br>0 0<br>1 10 100 1000 0 200 400 600 800 1000<br>Reverse Voltage, VR (V) Reverse Voltage, VR (V)<br> (A)F  (A)R<br>Forward Current, I Reverse Current, I<br> (W)<br>Power Dissipation, PD Forward Current, I (A)F<br> (nC)<br>C<br>Capacitance, C (pF)<br>Capacitive Charge, Q<br>**----- End of picture text -----**<br>


## Figure 3. Power Derating 

Figure 5. Capacitance vs. Reverse Voltage 

4 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc. Revised: 10/12/2021 

LSIC2SD120A20A 

Silicon Carbide Schottky Diode Datasheet 

Figure 7. Stored Energy vs. Reverse Voltage 

**==> picture [192 x 153] intentionally omitted <==**

**----- Start of picture text -----**<br>
45<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0 wa<br>0 200 400 600 800 1000<br>Reverse Voltage, VR (V)<br> (µJ)<br>C<br>Stored Energy, E<br>**----- End of picture text -----**<br>


Figure 8. Transient Thermal Impedance 

**==> picture [192 x 153] intentionally omitted <==**

**----- Start of picture text -----**<br>
1E+0<br>Duty = 0.5<br>0.3<br>1E-1<br>0.1<br>0.05<br>1E-2 0.02<br>0.01<br>Single Pulse<br>1E-3 -F o<br>1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0<br>Pulse Width (s)<br>th,JC<br>(°C/W)<br>Transient Thermal Impedance, Z<br>**----- End of picture text -----**<br>


5. Diode VF Model for Simulation 

𝑉𝐹(𝑇𝐽) = 𝑉0 + 𝐼𝑅0 𝑉0 = −1.30 × 10[−3] ∙𝑇𝐽 + 1.01 × 10[0] 𝑅0 = 8.15 × 10[−7] ∙𝑇𝐽2 + 1.03 × 10−4 ∙𝑇𝐽 + 2.36 × 10−2 

Notes: 

- TJ is junction temperature in ° C 

- Range valid from 25 ° C to 175 ° C 

- Model represents performance of a typical part 

5 

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LSIC2SD120A20A 

Silicon Carbide Schottky Diode Datasheet 

## 6. Package Dimensions 

TO-220-2L Package 

|Symbol|Millimeters|Millimeters|Millimeters|
|---|---|---|---|
||Min|Nom|Max|
|A|4.30|4.45|4.70|
|A1|1.14|1.27|1.40|
|A2|2.20|-|2.74|
|b|0.69|-|0.90|
|b2|1.17|-|1.62|
|c|0.36|-|0.60|
|D|14.90|-|15.90|
|D1|8.62|-|9.40|
|D2|12.50|-|12.95|
|E|9.70|10.18|10.36|
|E1|7.57|7.61|8.30|
|e1|-|2.54|-|
|e|5.03|5.08|5.13|
|H1|6.30|6.55|6.80|
|L|12.88|13.50|14.00|
|L1|2.39|-|3.25|
|øP|3.50|3.84|3.96|
|Q|2.65|-|3.05|
|R|-|-|0.25|



## 7. Part Numbering and Marking 

Sic = SiC Diode 2 = Gen2 SD = Schottky Diode 120 = Voltage Rating (1200 V) A = TO-220-2L 20 = Current Rating (20 A) A = AEC-Q101 Qualified YY = Year WW = Week X = Special Code ZZZZZZ-ZZ = Lot Number 

## 8. Packing Options 

|Part Number|Marking|Packing Mode|M.O.Q.|
|---|---|---|---|
|LSIC2SD120A20A|SIC2SD120A20A|Tube<br>(50pcs)|1000|



6 

Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc. ~~oo~~ Revised: 10/12/2021 

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LSIC2SD120A20A 

Silicon Carbide Schottky Diode Datasheet 

## 9. Packing Specifications 

Tube for TO-220-2L 

## **For additional information please visit www.Littelfuse.com/powersemi** 

**Disclaimer Notice -** Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, lifesaving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly forth in applicable Littelfuse product documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. 

Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics 

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