# TVS Diode, Transil LFTVS, Unidirectional, 12 V, 19 V, FlipChip, 4 Pins

![Product image](https://novapart.co/image/farnell:2344061/)

**URL**: https://novapart.co/products/LFTVS18-1F3/tvs-diode-transil-lftvs-unidirectional-12-v-19
**SKU**: LFTVS18-1F3
**Manufacturer**: STMICROELECTRONICS
**Category**: Circuit Protection || TVS - Transient Voltage Suppressors || TVS Diodes
**Price**: €0.2700
**Stock**: 10+
**Lead Time**: 120 days (indicative)

## Description

Product Range:Transil LFTVS Series; TVS Polarity:Unidirectional; Reverse Stand-Off Voltage Vrwm:12V; Clamping Voltage Vc Max:19V; Diode Case Style:FlipChip; No. of Pins:4Pins; Breakdown

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Tvs Polarity | Unidirectional |
| Product Range | Transil LFTVS |
| Qualification | - |
| Diode Mounting | Surface Mount |
| Diode Case Style | FlipChip |
| Clamping Voltage Max | 19V |
| Reverse Standoff Voltage | 12V |
| Maximum Breakdown Voltage | - |
| Minimum Breakdown Voltage | 16V |
| Operating Temperature Max | 125°C |
| Peak Pulse Power Dissipation | 350W |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2344061/)

## **LFTVS18-1F3** 

## Low forward voltage Transil™, transient voltage suppressor 

**Datasheet**  **production data** 

## **Features** 

- Strong ESD and EOS protection 

- Very low clamping factor VCL/VBR 

- Unidirectional device 

- Fast response time 

- Very thin package 

- Very small PCB area 

**Flip Chip (4 bumps)** 

- RoHS compliant 

## **Figure 1. Pin configuration (bump side)** 

## **Complies with the following standards:** 

- IEC 61000-4-2 level 4 

   - ±15 kV (air discharge) 

   - ±8 kV (contact discharge) 

## **Description** 

The LFTVS18-1F3 is a single line diode designed specifically for the protection of integrated circuits in portable equipment and miniaturized electronics devices subject to ESD and EOS transient overvoltages. 

**==> picture [58 x 63] intentionally omitted <==**

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A B<br>1<br>2<br>**----- End of picture text -----**<br>


## **Figure 2. Device configuration** 

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A1 and A2<br>B1 and B2<br>**----- End of picture text -----**<br>


**TM** : Transil is a trademark of STMicroelectronics 

September 2012 

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Doc ID 14608 Rev 3 

This is information on a product in full production. 

_www.st.com_ 

**Characteristics** 

**LFTVS18-1F3** 

## **1 Characteristics** 

## **Table 1. Absolute maximum ratings (Tamb = 25 °C)** 

|**Symbol**|**Parameter**|**Test condition**|**Value**|**Unit**|
|---|---|---|---|---|
|PPP|Peak pulse power dissipation<br>(8/20 µs pulse)|Tjinitial = Tamb|350|W|
|IFSM|Non repetitive surge peak forward<br>current|tp= 10 ms, Tjinitial = Tamb|5|A|
|Tj|Maximum operating junction temperature||125|°C|
|Tstg|Storage temperature range||-55 to +150|°C|



## **Figure 3. Electrical characteristics - definitions** 

||||||I|||
|---|---|---|---|---|---|---|---|
|**Symbol**||**Parameter**||IF||||
|V<br>BR|=|Breakdown voltage||||||
|I<br>RM|=|Leakage current @ V<br>RM||||VF||
|V<br>V<br>RM<br>CL|=<br>=|Stand-off voltage<br>Clamping voltage|VCLVBR<br>VRM||IRM||V|
|I<br>PP|=|Peak pulse current||||||
|I<br>F|=|Forward current||||||
|V<br>F|=|Forward voltage||||||
|R<br>d|=|Dynamic resistance||Slope: 1/Rd|IPP|||



## **Table 2. Electrical characteristics - values (Tamb = 25 °C)** 

|**Symbol**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|
|VBR|IR= 1 mA|16|||V|
|IRM|VRM= 12 V|||250|nA|
|VCL|IPP= 1 A(1)|||19|V|
|VF|IF= 850 mA|||1.3|V|
|Cline|VR= 0 V, VOSC= 30 mV, F = 1 MHz||175||pF|



1. 8 / 20 µs pulse waveform 

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**LFTVS18-1F3** 

**Characteristics** 

**Figure 4. Peak pulse power versus initial junction temperature (pulse 8/20 µs)** 

**Figure 5. Peak pulse power versus initial junction temperature (pulse 10/1000 µs)** 

**==> picture [462 x 146] intentionally omitted <==**

**----- Start of picture text -----**<br>
PPP (W) PPP (W)<br>1000.0 200.0<br>800.0 160.0<br>600.0 120.0<br>400.0 80.0<br>200.0 40.0<br>T (°C)j T (°C)j<br>0.0 0.0<br>0 25 50 75 100 125 150 0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


**Figure 6. Peak pulse power versus exponential pulse duration** 

**Figure 7. Clamping voltage versus peak pulse current (8/20 µs, typical values)** 

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PPP(W)<br>10000 IPP(A)<br>Tj initial = 25 °C 100.0<br>1000 10.0<br>100 1.0<br>8/20µs<br>-30°C<br>25°C<br>85°C<br>tp(µs) 0.1 VCL(V) 125°C<br>10 14 15 16 17 18 19 20 21 22 23 24 25 26 27<br>1 10 100 1000<br>**----- End of picture text -----**<br>


**Figure 8. Leakage current versus junction temperature (typical values)** 

**Figure 9. Forward voltage drop versus peak forward current (typical values)** 

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10.0 IR (nA) 100 IFM(A)<br>VR =12V<br>10<br>1<br>1.0 0.1<br>-30°C<br>25°C<br>0.01 85°C<br>125°C<br>0.001<br>T (°C)j VFM(V)<br>0.1<br>0.0001<br>25 50 75 100 125<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>**----- End of picture text -----**<br>


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**Characteristics** 

**LFTVS18-1F3** 

**Figure 10. Junction capacitance versus line Figure 11. Junction capacitance versus voltage (typical values) frequency for different bias voltages (P = -12 dBm)** 

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Capacitance(pF)<br>200 F=1 MHz 200 Capacitance(pF)<br>||] | tt ty VOSCVr=0 à 12V=30mVRMS 180 a<br>150 Waa TJ=25°C 160 Pe SEE<br>140<br>XT: ToT 120 a el<br>100 BNE 100 ee<br>80<br>r | PKL |] | od dd LL ELT<br>|ae ee 60<br>50 40 0.0V 2.0V<br>4.0V 6.0V<br>20 8.0V 10.0V<br>12.0V 14.0V F (Hz)<br>Pt | | tt tt ttt Voltage(V) ey 0 = = fy<br>0 Pt tt tt te tt ft 1M 3M 10M =n 30M 100M<br>0 1 2 3 4 5 6 7 8 9 10 11 12<br>**----- End of picture text -----**<br>


**Figure 12. Breakdown voltage versus initial junction temperature (typical value)** 

**Figure 13. S21 insertion losses versus frequency response** 

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**----- Start of picture text -----**<br>
VBR(V) S21 (dB)<br>19 0<br>Vbr @ 1mA<br>(-30°C to 125°C) -5<br>TTT... -10 “TO Lon SL CO on<br>-15 Co Son oT<br>18 THEE TT TTT TTT -20 ConOOi Aaono<br>-25<br>TT TTT) TTY LER]2 COI C o eso So<br>-30<br>-35<br>17 TT] ||] Leer tidyt= | NTCPI TE ETI ST<br>-40<br>-45<br>TT] teryomTTT TTT | en<br>Lj— T (° C)j -50<br>16 -55 F/Hz<br>-50 SESE -25 0 25 50 75 100 125 150 -60 OTMCO CoinPE PTET1 a<br>100k 1M 10M 100M 1G<br>**----- End of picture text -----**<br>


**Figure 14. ESD response to IEC 61000-4-2 (+8 kV contact discharge)** 

**Figure 15. ESD response to IEC 61000-4-2 (-8 kV contact discharge)** 

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IEC61000-4-2: +8kV contact discharge<br>Voltage/Division: 10V<br>Time/Division: 20ns<br>Vpp@peak: 27.5V<br>Vpp@ 100ns: 18.6V<br>**----- End of picture text -----**<br>


**==> picture [83 x 33] intentionally omitted <==**

**----- Start of picture text -----**<br>
IEC61000-4-2: -8kV contact discharge<br>Voltage/Division: 5V<br>Time/Division: 20ns<br>Vpp@peak: -11.3V<br>Vpp@ 100ns: -1.4V<br>**----- End of picture text -----**<br>


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**LFTVS18-1F3** 

**Ordering information scheme** 

## **2 Ordering information scheme** 

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Figure 16. Ordering information scheme<br>**----- End of picture text -----**<br>


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LF TVS  18 - 1   F3<br>Low forward voltage<br>Transient voltage suppressor<br>Breakdown voltage<br>18 = 18 VMAX<br>Number of lines<br>1 = single line<br>Package<br>F = Flip Chip<br>3 = Lead-free, pitch = 400 µm<br>**----- End of picture text -----**<br>


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**LFTVS18-1F3** 

**Package information** 

## **3 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

## **Figure 17. Package dimensions** 

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400 µm ± 40 605 µm ± 55<br>205 µm ± 40<br>185 µm ± 10<br>255 µm ± 40<br>0.77 mm ± 30 µm<br>400 µm ± 40<br>185 µm ± 10 0.77 mm ± 30 µm<br>**----- End of picture text -----**<br>


## **Figure 18. Foot print recommendations Figure 19. Marking** 

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**----- Start of picture text -----**<br>
Dot,<br>xx = marking<br>Copper pad Diameter:<br>220 µm recommended z = manufacturing<br>260 µm maximum location<br>yww = datecode<br>Solder mask opening: y = year, x x z<br>300 µm minimum ww = week<br>y w w<br>Solder stencil opening:<br>220 µm recommended<br>**----- End of picture text -----**<br>


_Note: Product marking may be rotated by 90° for assembly plant differentiation. In no case should this product marking be used to orient the component for its placement on a PCB. Only pin 1 mark is to be used for this purpose._ 

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**LFTVS18-1F3** 

**Ordering information** 

## **Figure 20. Tape and reel specifications** 

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**----- Start of picture text -----**<br>
Ø 1.55 ± 0.05<br>Dot identifying Pin A1 location 2.0 ± 0.05 4.0 ± 0.1<br>0.20 ± 0.05<br>E M z E M z E M z E M z E M z E M z<br>y w w y w w y w w y w w y w w y w w<br>0.69 ± 0.05 2.0 ± 0.1<br>0.87 ±0.05<br>User direction of unreeling<br>All dimensions in mm<br>1.75 ± 0.1<br>3.5 ±- 0.05<br>8.0 ± 0.3<br>0.87 ±0.05<br>**----- End of picture text -----**<br>


_Note: More information is available in the Application notes:_ 

_AN2348: “400 µm Flip Chip: package description and recommendations for use” AN1751: “EMI Filters: recommendations and measurements”_ 

## **4 Ordering information** 

**Table 3. Ordering information** 

|**Order code**|**Marking(1)**|**Package**|**Weight**|**Base qty**|**Delivery mode**|
|---|---|---|---|---|---|
|LFTVS18-1F3|EM|Flip Chip|0.79 mg|10 000|Tape and reel (7”)|



1. The marking can be rotated by 90° to differentiate assembly location 

## **5 Revision history** 

## **Table 4. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|06-Mar-2008|1|Initial release.|
|04-Sep-2008|2|Updated VFto 1.05 V. Updated_Figure 20_to show pitch of 2.0 mm.<br>Updated IFSMto 11 A. Updated_Figure 5_,_Figure 7_, and_Figure 8_.|
|14-Sep-2012|3|Updated all graphics in_1: Characteristics_. Added tolerances to<br>pocket dimensions in_Figure 20_.|



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