# Bipolar (BJT) Single Transistor, NPN, 80 V, 10 A, 1.67 W, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:2453349/)

**URL**: https://novapart.co/products/KSE44H11TU/bipolar-bjt-single-transistor-npn-80-v-10-a-167-w
**SKU**: KSE44H11TU
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.1950
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 1.67W |
| Dc Current Gain Hfe | 60hFE |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transition Frequency | 50MHz |
| Transistor Case Style | TO-220 |
| Dc Current Gain Hfe Min | 60hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 10A |
| Collector Emitter Voltage Max | 80V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2453349/)

**==> picture [106 x 35] intentionally omitted <==**

## **KSE44H Series** 

## **General Purpose Power Switching Applications** 

**==> picture [407 x 76] intentionally omitted <==**

**----- Start of picture text -----**<br>
General Purpose Power Switching Applications<br>• Low Collector-Emitter Saturation Voltage : VCE(sat) = 1V (Max.) @ 8A<br>• Fast Switching Speeds<br>• Complement to KSE45H<br>1 TO-220<br>**----- End of picture text -----**<br>


- Fast Switching Speeds 

- Complement to KSE45H 

1.Base    2.Collector    3.Emitter 

## **NPN Epitaxial Silicon Transistor** 

## **Absolute Maximum Ratings** TC=25°C unless otherwise noted 

|**Symbol**|**Parameter**|**Value**|**Units**|
|---|---|---|---|
|VCEO|Collector-Emitter Voltage : KSE44H 1,2<br>: KSE44H 4,5<br>: KSE44H 7,8<br>: KSE44H 10,11|30<br>45<br>60<br>80|V<br>V<br>V<br>V|
|VEBO|Emitter- Base Voltage|5|V|
|IC|Collector Current (DC)|10|A|
|ICP|*Collector Current (Pulse)|20|A|
|PC|Collector Dissipation (TC=25°C)|50|W|
|PC|Collector Dissipation (Ta=25°C)|1.67|W|
|TJ|Junction Temperature|150|°C|
|TSTG|Storage Temperature|- 55 ~ 150|°C|



## **Electrical Characteristics** TC=25°C unless otherwise noted 

|**Symbol**|**Parameter**|**Test Condition**|**Min.**|**Typ**|**.**<br>**Max.**|**Units**|
|---|---|---|---|---|---|---|
|ICES|Collector Cut-off Current|VCE= Rated VCEO, VEB= 0|||10|µA|
|IEBO|Emitter Cut-off Current|VEB= 5V, IC = 0|||100|µA|
|hFE|*DC Current Gain<br>: KSE44H 1,4,7,10<br>: KSE44H 2,5,8,11|VCE= 1V, IC= 2A|35<br>60||||
|VCE(sat)|*Collector-Emitter Saturation Voltage<br>: KSE44H 1, 4, 7 10<br>: KSE44H 2, 5, 8,11|IC= 8A, IB= 0.8A<br>IC = 8A, IB= 0.4A|||1<br>1|V<br>V|
|VBE (sat)|*Base-Emitter Saturation Voltage|IC = 8A, IB= 0.8A|||1.5|V|
|fT|Current Gain Bandwidth Product|VCE= 10V, IC = 0.5A||50||MHz|
|Cob|Output  Capacitance|VCB= 10V, f = 1MHz||130||pF|
|tON|Turn ON Time|VCC=20V, IC= 5A<br>IB1= - IB2= 0.5A||300||ns|
|tSTG|Storage Time|||500||ns|
|tF|Fall Time|||140||ns|



* Pulse test: PW≤300µs, Duty cycle≤2% 

©2001 Fairchild Semiconductor Corporation 

Rev. A1, June 2001 

**==> picture [430 x 615] intentionally omitted <==**

**----- Start of picture text -----**<br>
Typical Characteristics<br>1000 10<br>VCE = 1V IC = 10 IB<br>100 1 VBE(sat)<br>10 0.1<br>VCE(sat)<br>1 0.01<br>0.01 0.1 1 10 0.01 0.1 1 10 100<br>IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT<br>Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage<br>                 Collector-Emitter Saturation Voltage<br>1000 100<br>f=100MHZ<br>10<br>100<br>1<br>10µs<br>44H 1,244H 4,5 100µs<br>44H 7,8<br>44H 10,11<br>10 0.1<br>1 10 100 1 10 100 1000<br>VCB[V], COLLECTOR-BASE VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE<br>Figure 3. Collector Output Capacitance Figure 4. Safe Operating Area<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 25 50 75 100 125 150 175<br>Tc[oC], CASE TEMPERATURE<br>DC<br>1µs<br>1ms<br>(sat)[V], SATURATION VOLTAGE<br>, DC CURRENT GAIN CE<br>FE<br>h<br>(sat), V<br>BE<br>V<br>[pF], CAPACITANCE<br>ob<br>C [A], COLLECTOR CURRENTIC<br>[W], POWER DISSIPATIONPC<br>**----- End of picture text -----**<br>


**Figure 5. Power Derating** 

©2001 Fairchild Semiconductor Corporation 

Rev. A1, June 2001 

## **Package Demensions** 

**==> picture [289 x 406] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-220<br>9.90 ±0.20 4.50 ±0.20<br>(8.70)<br>ø3.60 ±0.10 1.30 [+0.10] –0.05<br>1.27 ±0.10 1.52 ±0.10<br>0.80 ±0.10 0.50 [+0.10] –0.05 2.40 ±0.20<br>2.54TYP 2.54TYP<br>[2.54 ±0.20] [2.54 ±0.20]<br>10.00 ±0.20<br>(45)°<br>0.10± 0.10±<br>(1.70) 1.30  2.80<br>0.20 (3.70) 0.20±<br>±<br>18.95MAX.<br>9.20  15.90<br>(1.46)<br>(3.00)<br>0.20<br>± (1.00)<br>0.30<br>±<br>13.08<br>10.08<br>**----- End of picture text -----**<br>


Dimensions in Millimeters 

©2001 Fairchild Semiconductor Corporation 

Rev. A1, June 2001 

## **TRADEMARKS** 

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 

|ACEx™|FAST®|OPTOPLANAR™|STAR*POWER™|
|---|---|---|---|
|Bottomless™|FASTr™|PACMAN™|Stealth™|
|CoolFET™|FRFET™|POP™|SuperSOT™-3|
|_CROSSVOLT_™|GlobalOptoisolator™|Power247™|SuperSOT™-6|
|DenseTrench™|GTO™|PowerTrench®|SuperSOT™-8|
|DOME™|HiSeC™|QFET™|SyncFET™|
|EcoSPARK™|ISOPLANAR™|QS™|TruTranslation™|
|E2CMOS™|LittleFET™|QT Optoelectronics™|TinyLogic™|
|EnSigna™<br>FACT™|MicroFET™<br>MICROWIRE™|Quiet Series™<br>SLIENT SWITCHER®|UHC™<br>UltraFET®|
|FACT Quiet Series™|OPTOLOGIC™|SMART START™|VCX™|
|STAR*POWER is used under|license|||



## **DISCLAIMER** 

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 

## **LIFE SUPPORT POLICY** 

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. 

As used herein: 

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 

## **PRODUCT STATUS DEFINITIONS** 

## **Definition of Terms** 

|**Definition of Terms**|||
|---|---|---|
|**Datasheet Identification**|**Product Status**|**Definition**|
|Advance Information|Formative or In<br>Design|This datasheet contains the design specifications for<br>product development. Specifications may change in<br>any manner without notice.|
|Preliminary|First Production|This datasheet contains preliminary data, and<br>supplementary data will be published at a later date.<br>Fairchild Semiconductor reserves the right to make<br>changes at any time without notice in order to improve<br>design.|
|No Identification Needed|Full Production|This datasheet contains final specifications. Fairchild<br>Semiconductor reserves the right to make changes at<br>any time without notice in order to improve design.|
|Obsolete|Not In Production|This datasheet contains specifications on a product<br>that has been discontinued by Fairchild semiconductor.<br>The datasheet is printed for reference information only.|



©2001 Fairchild Semiconductor Corporation 

Rev. H3 



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