# Bipolar (BJT) Single Transistor, NPN, 50 V, 150 mA, 250 mW, TO-92, Through Hole

![Product image](https://novapart.co/image/farnell:2453959/)

**URL**: https://novapart.co/products/KSC945CGTA/bipolar-bjt-single-transistor-npn-50-v-150-ma-250
**SKU**: KSC945CGTA
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.0230
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 250mW |
| Dc Current Gain Hfe | 200hFE |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transition Frequency | 300MHz |
| Transistor Case Style | TO-92 |
| Dc Current Gain Hfe Min | 200hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 150mA |
| Collector Emitter Voltage Max | 50V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2453959/)

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November 2014<br>**----- End of picture text -----**<br>


## **KSC945 NPN Epitaxial Silicon Transistor** 

## **Features** 

- Audio Frequency Amplifier and High-Frequency OSC. 

- Complimentary to KSA733 

- Collector-Base Voltage: VCBO = 60 V 

- High Current Gain Bandwidth Product: fT = 300 MHz (Tyical) 

- Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) 

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1 TO-92<br>**----- End of picture text -----**<br>


1. Emitter   2. Base   3. Collector 

## **Ordering Information** 

|**Part Number**|**Top Mark**|**Package**|**Packing Method**|
|---|---|---|---|
|KSC945YBU|C945|TO-92 3L|Bulk|
|KSC945YTA|C945|TO-92 3L|Ammo|
|KSC945GTA|C945|TO-92 3L|Ammo|
|KSC945CYTA|C945|TO-92 3L|Ammo|
|KSC945CGBU|C945|TO-92 3L|Bulk|
|KSC945CGTA|C945|TO-92 3L|Ammo|



## **Absolute Maximum Ratings** 

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCBO|Collector-Base Voltage|60|V|
|VCEO|Collector-Emitter Voltage|50|V|
|VEBO|Emitter-Base Voltage|5|V|
|IC|Collector Current|150|mA|
|TJ|Junction Temperature|150|°C|
|TSTG|Storage Temperature|-55 to 150|°C|



© 2002 Fairchild Semiconductor Corporation KSC945 Rev. 1.1.0 

www.fairchildsemi.com 

## **Thermal Characteristics**[(1)] 

Values are at TA = 25°C unless otherwise noted. 

**Symbol Parameter Value Unit** Power Dissipation 250 mW PD Derate Above 25 ° C 2.0 mW/ ° C R θ JA Thermal Resistance, Junction-to-Ambient 500 ° C/W ~~<==~~ **Note:** 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 

## **Electrical Characteristics** 

Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|BVCBO|Collector-Base Breakdown Voltage|IC= 100μA, IE= 0|60|||V|
|BVCEO|Collector-Emitter Breakdown Voltage|IC= 10 mA, IB= 0|50|||V|
|BVEBO|Emitter-Base Breakdown Voltage|IE= 10μA, IC= 0|5|||V|
|ICBO|Collector Cut-Off Current|VCB= 40 V, IE= 0|||0.1|μA|
|IEBO|Emitter Cut-Off Current|VEB= 3 V, IC= 0|||0.1|μA|
|hFE|DC Current Gain|VCE= 6 V, IC= 1.0 mA|40||700||
|VCE(sat)|Collector-Emitter Saturation Voltage|IC= 100 mA, IB= 10 mA||0.15|0.30|V|
|fT|Current Gain Bandwidth Product|VCE= 6 V, IC= 10 mA||300||MHz|
|Cob<br>~~es~~|Output Capacitance|VCB= 6 V, IE= 0,<br>f = 1 MHz||2.5||pF|
|NF<br>~~es~~|Noise Figure|VCE= 6 V, IC= 0.5 mA,<br>f = 1 kHz, RS= 500Ω||4.0||dB|



## **hFE Classification** 

|**hFE ClassificationFE Classification Classification**||||||
|---|---|---|---|---|---|
|**Classification**|**R**|**O**|**Y**|**G**|**L**|
|hFE|40 ~ 80|70 ~ 140|120 ~ 240|200 ~ 400|350 ~ 700|



© 2002 Fairchild Semiconductor Corporation KSC945 Rev. 1.1.0 

www.fairchildsemi.com 

2 

## **Typical Performance Characteristics** 

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**----- Start of picture text -----**<br>
100 100<br>IB = 400 μ A VCE = 6V<br>IB = 350 μ A<br>80<br>EEARSEEEE IB = 300 μ A<br>IB = 250 μ A 10<br>60<br>P2cceneeen IB = 200 μ A<br>40 IB = 150 μ A<br>Peer 1<br>I B  = 100 μ A<br>20<br>Pao IB = 50 μ A<br>0 PEPE 0.1<br>0 2 4 6 8 10 12 14 16 18 20 0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>VCE[V], COLLECTOR-EMITTER VOLTAGE VBE[V], BASE-EMITTER VOLTAGE<br>Figure 1. Static Characteristic Figure 2. Transfer Characteristic<br>1000 10<br>VCE = 6V IC = 10 IB<br>1 VBE(sat)<br>100<br>0.1<br>V CE (sat)<br>10 0.01<br>1 10 100 1000 1 10 100 1000<br>IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT<br>Figure 3. DC Current Gain Figure 4. Base-Emitter Saturation Voltage and<br>Collector-Emitter Saturation Voltage<br>100 1000<br>IE = 0 VCE = 6V<br>f = 1MHz<br>10 100<br>1 10<br>0.1 1<br>1 10 100 1000 0.1 1 10 100<br>VCB [V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT<br>Figure 5. Output Capacitance Figure 6. Current Gain Bandwidth Product<br>[mA], COLLECTOR CURRENTIC [mA], COLLECTOR CURRENTIC<br>, DC CURRENT GAIN (sat)[V], SATURATION VOLTAGE<br>hFE (sat), VCE<br>BE<br>V<br> [pF], CAPACITANCE<br>ob<br>C<br>[MHz], CURRENT GAIN BANDWIDTH PRODUCTfT<br>**----- End of picture text -----**<br>


© 2002 Fairchild Semiconductor Corporation KSC945 Rev. 1.1.0 

www.fairchildsemi.com 

3 

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APPROVED<br>       July-14-2008<br>        D<br>**----- End of picture text -----**<br>


## ~~—~~ 

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## **DISCLAIMER** 

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR WEBSITE AT HTTP://WWW.FAIRCHILDSEMI.COM. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. 

As used herein: 

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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. 

## **PRODUCT STATUS DEFINITIONS** 

|**Definition of Terms**|||
|---|---|---|
|**Datasheet Identification**|**Product Status**|**Definition**|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications may change<br>in anymanner without notice.|
|Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild<br>Semiconductor reserves the right to make changes at anytime without notice to improve design.|
|No Identification Needed|Full Production|Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make<br>changes at anytime without notice to improve the design.|
|Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.<br>The datasheet is for reference information only.|



Rev. I73 

© Fairchild Semiconductor Corporation 

www.fairchildsemi.com 



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