# Bipolar (BJT) Single Transistor, NPN, 800 V, 3 A, 100 W, TO-220, Through Hole ![Product image](https://novapart.co/image/farnell:2825107/) **URL**: https://novapart.co/products/KSC5603DTU/bipolar-bjt-single-transistor-npn-800-v-3-a-100-w **SKU**: KSC5603DTU **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.5660 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:800V; Transition Frequency ft:5MHz; Power Dissipation Pd:100W; DC Collector Current:3A; DC Current Gain hFE:20hFE; Transist ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | - | | Qualification | - | | Power Dissipation | 100W | | Transistor Mounting | Through Hole | | Transistor Polarity | NPN | | Transition Frequency | 5MHz | | Transistor Case Style | TO-220 | | Dc Current Gain Hfe Min | 20hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 3A | | Collector Emitter Voltage Max | 800V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2825107/) ## **Is Now Part of** ## **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. **==> picture [56 x 10] intentionally omitted <==** **----- Start of picture text -----**
January 2016
**----- End of picture text -----**
## **KSC5603D NPN Silicon Transistor, Planar Silicon Transistor** ## **Features** **==> picture [448 x 184] intentionally omitted <==** **----- Start of picture text -----**
Equivalent Circuit
• High Voltage High Speed Power Switch Application C
• Wide Safe Operating Area
• Built-in Free Wheeling Diode B
• Suitable for Electronic Ballast Application 1 TO-220
• Small Variance in Storage Time E : 1.Base 2.Collector 3.Emitter v
Ordering Information
Part Number Marking Package Packing Method
KSC5603DTU C5603D TO-220 3L Rail
**----- End of picture text -----**
## **Absolute Maximum Ratings** Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. |**Symbol**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |VCBO|Collector-Base Voltage|1600|V| |VCEO|Collector-Emitter Voltage|800|V| |VEBO|Emitter-Base Voltage|12|V| |IC|Collector Current (DC)|3|A| |ICP|Collector Current (Pulse)(1)|6|A| |IB|Base Current (DC)|2|A| |IBP|Base Current (Pulse)(1)|4|A| |PC|Power Dissipation (TC= 25°C)|100|W| |TJ|Junction Temperature|150|°C| |TSTG|Storage Temperature|-65 to +150|°C| ## **Notes:** 1. Pulse test: pulse width = 5 ms, duty cycle < 10% © 2003 Fairchild Semiconductor Corporation KSC5603D Rev. 2.3 www.fairchildsemi.com ## **Thermal Characteristics** Values are at TA = 25°C unless otherwise noted. |**Symbol**|**Parameter**|**Parameter**|**Rating**|**Unit**| |---|---|---|---|---| |RθJC|Thermal Resistance|Junction-to-Case|1.25|°C/W| |RθJA||Junction-to-Ambient|80|°C/W| |TL|Maximun Lead Temperature for Soldering Purpose
: 1/8” from Case for 5 seconds||270|°C| ## **Electrical Characteristics** Values are at TA = 25°C unless otherwise noted. |**Symbol**|**Parameter**|**Conditions**|**Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---|---| |BVCBO|Collector-Base Breakdown
Voltage|IC= 0.5 mA, IE= 0||1600|1689||V| |BVCEO|Collector-Emitter
Breakdown Voltage|IC= 5 mA, IB= 0||800|870||V| |BVEBO|Emitter-Base Breakdown
Voltage|IE= 0.5 mA, IC= 0||12.0|14.8||V| |ICES|Collector Cut-Off Current|VCE= 1600 V, VBE= 0|TA= 25°C||0.01|100|μA| ||||TA= 125°C|||1000|| |ICEO|Collector Cut-Off Current|VCE= 800 V, IB= 0|TA= 25°C||0.01|100|μA| ||||TA= 125°C|||1000|| |IEBO|Emitter Cut-Off Current|VEB= 12 V, IC= 0|||0.05|500|μA| |hFE|DC Current Gain|VCE= 3 V, IC= 0.4 A|TA= 25°C|20|29|35|| ||||TA= 125°C|6|15||| |||VCE= 10 V, IC= 5 mA|TA= 25°C|20|43||| ||||TA= 125°C|20|46||| |VCE(sat)
~~==)~~|Collector-Emitter Saturation
Voltage
~~==)~~|IC= 250 mA, IB= 25 mA
~~==)~~||~~==)~~|0.50
~~==)~~|1.25
~~==)~~|V
~~==)~~| |||IC= 500 mA, IB= 50 mA
~~==)~~||~~==)~~|1.50
~~==)~~|2.50
~~==)~~|| |||IC= 1 A, IB= 0.2 A
~~==)~~||~~==)~~|1.20
~~==)~~|2.50
~~==)~~|| |VBE(sat)|Base-Emitter Saturation
Voltage|IC= 500 mA, IB= 50 mA|TA= 25°C||0.74|1.20|V| ||||TA= 125°C||0.61|1.10|| |||IC= 2 A, IB= 0.4 A|TA= 25°C||0.85|1.20|| ||||TA= 125°C||0.74|1.10|| |Cib|Input Capacitance|VEB= 10 V, IC= 0, f = 1 MHz|||745|1000|pF| |Cob|Output Capacitance|VCB= 10 V, IE= 0, f = 1 MHz|||56|500|pF| |fT|Current Gain Bandwidth
Product|IC= 0.1 A,VCE= 10 V|||5||MHz| |VF|Diode Forward Voltage|IF= 0.4 A|||0.76|1.20|V| |||IF= 1 A|||0.83|1.50|| © 2003 Fairchild Semiconductor Corporation KSC5603D Rev. 2.3 www.fairchildsemi.com 2 ## **Electrical Characteristics** (Continued) Values are at TA = 25°C unless otherwise noted. |**Symbol**|**Parameter**|**Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |RESISTIVE LOAD SWITCHING (D.C<
10%, Pulse Width = 20μs)||||||| |tON|Turn-On Time|IC= 0.3 A, IB1= 50 mA,
IB2= 150 A, VCC= 125 V,
RL= 416Ω||400|600|ns| |tSTG|Storage Time||2.0|2.1|2.3|μs| |tF|Fall Time|||310|1000|ns| |tON|Turn-On Time|IC= 0.5 A, IB1= 50 mA,
IB2= 250 mA, VCC= 125 V,
RL= 250Ω||600|1100|ns| |tSTG|Storage Time|||1.3|1.5|μs| |tF|Fall Time|||180|350|ns| |INDUCTIVE LOAD SWITCHING (VCC= 15 V)||||||| |tSTG|Storage Time|IC= 0.3 A, IB1= 50 mA,
IB2= 150 mA, VZ= 300 V,
LC= 200 H|0.60|0.73|0.90|μs| |tF|Fall Time|||170|250|ns| |tC|Cross-Over Time|||180|250|ns| |tSTG|Storage Time|IC= 0.5 A, IB1= 50 mA,
IB2= 250 mA, VZ= 300 V,
LC= 200 H|0.70|0.84|1.00|μs| |tF|Fall Time|||140|175|ns| |tC|Cross-Over Time|||170|200|ns| © 2003 Fairchild Semiconductor Corporation KSC5603D Rev. 2.3 www.fairchildsemi.com 3 **==> picture [441 x 616] intentionally omitted <==** **----- Start of picture text -----**
Typical Performance Characteristics
3
1A
900mA VCE=10V
800mA 100
700mA600mA TJ=125oC
2 500mA
400mA
300mA TJ=25 o C
200mA
10
IB=100mA
1
0 = 1
0 1 2 3 4 5 6 7 1 10 100 1000
VCE[V], COLLECTOR EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC Current Gain
10 IC=5IB I C =5I B
1 1 T J =25 o C
T J =125oC T J =125oC
0.1
TJ=25oC
0.01 0.1
1 10 100 1000 1 10 100 1k
IC(mA), COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage
2
T J =25oC 3.0A 1000 Cib F=1MHz
2.0A
1.0A 100
1
0.4A
IC=0.2A Cob
10
0 1 aa
1 10 100 1k 1 10 100
IB[mA], BASE CURRENT REVERSE VOLTAGE[V]
Figure 5. Typical Collector Saturation Voltage Figure 6. Capacitance
, DC CURRENT GAIN
[A], COLLECTOR CURRENTIC hFE
(V), VOLTAGE
[V], VOLTAGE
VCE(sat) VBE
[V], VOLTAGE
CE
V CAPACITANCE[pF]
**----- End of picture text -----**
© 2003 Fairchild Semiconductor Corporation KSC5603D Rev. 2.3 www.fairchildsemi.com 4 ## **Typical Performance Characteristics** (Continued) **==> picture [410 x 597] intentionally omitted <==** **----- Start of picture text -----**
1000 5
900 4.5
800 I C =6I B1 =2I B2 4 I C =6I B1 =2I B2
700 V CC =125V VCC=125V
600 PW=20us 3.5 PW=20us
500 || 3 ||
400 TJ=125oC 2.5 T J =125oC
300
2
200
TJ=25oC 1.5 T J =25 o C
100 1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3
IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT
Figure 7. Resistive Switching Time, ton Figure 8. Resistive Switching Time, toff
1000 10
9
900
800 I VC=10ICC=125VB1=5IB2 87 I V C=10ICC =125V B1=5IB2
700 | PW=20us TJ=125 o C 6 | PW=20us
5
600
4
500 TJ=125oC
3
400
2
300 T J =25oC TJ=25oC
200 1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3
IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT
Figure 9. Resistive Switching Time, ton Figure 10. Resistive Switching Time, toff
4 6
IC=6IB1=2IB2 5 IC=10IB1=2IB2
VCC=15V VCC=15V
3 V LC Z =300V=200uH 4 V L CZ=300V =200uH T J =125oC
TJ=125oC 3
2
2 T J =25 o C
TJ=25oC
A T ioN
1 1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2
IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT
Figure 11. Inductive Switching Time, tSTG Figure 12. Inductive Switching Time, tSTG
[ns],TIME (us),TIME
tON tOFF
[ns],TIME (us),TIME
tON tOFF
(us),TIME (us),TIME
tSTG tSTG
**----- End of picture text -----**
© 2003 Fairchild Semiconductor Corporation KSC5603D Rev. 2.3 www.fairchildsemi.com 5 ## **Typical Performance Characteristics** (Continued) **==> picture [410 x 589] intentionally omitted <==** **----- Start of picture text -----**
400 800
300 IV C CC=6I=15V B1 =2I B2 700600 IVCCC=10I=15VB1=2IB2
VZ=300V 500 V Z =300V
200 LC=200uH T J =25 o C 400 LC=200uH
300
TJ=25oC
100
90 200
80
70
60 T J =125oC
50
40 100 90 T J =125 o C
80
30 70
60
20 50
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2
IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT
Figure 13. Inductive Switching Time, tF Figure 14. Inductive Switching Time, tF
500 2000
400 IVVCCCZ=6I=300V=15VB1=2IB2 1000 IVVCCCZ=10I=300V=15VB1=2IB2 TJ=125oC
LC=200uH 900 L C =200uH
300 800
700
TJ=25oC 600500
400
200
300
TJ=125oC 200 TJ=25oC
100 100
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2
IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT
Figure 15. Inductive Switching Time, tc Figure 16. Inductive Switching Time, tc
100
50
0 ba
0 50 100 150 200
TC(oC), CASE TEMPERATURE
Figure 17. Power Derating
(ns),TIMEtF (ns),TIMEtF
[ns],TIMEtC [ns],TIMEtC
[W], POWER DISSIPATIONPC
**----- End of picture text -----**
© 2003 Fairchild Semiconductor Corporation KSC5603D Rev. 2.3 www.fairchildsemi.com 6 **==> picture [592 x 749] intentionally omitted <==** **----- Start of picture text -----**
SUPPLIER "B" PACKAGE
SHAPE �����
3.50
10.67
SUPPLIER "A" PACKAGE 9.65 E
SHAPE
3.40
2.50
16.30
IF PRESENT, SEE NOTE "D" 13.90
E
16.51 9.40
15.42
8.13 E
1 2 3
[2.46] C 2.704.10
14.04
2.13 12.70
2.06
FRONT VIEWS
4.70 1.62 1.62
4.00 1.42 [ H] 2.67 1.10
2.40
"A1" 8.65 1.00
SEE NOTE "F" 7.59 0.55
�� ��
OPTIONAL 6.69 �� ��
6.06
CHAMFER
E
14.30
11.50
NOTE "I" BOTTOM VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
3 2 1 D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
0.60
0.36 2.85 BACK VIEW
2.10
SIDE VIEW
**----- End of picture text -----**
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