# Bipolar (BJT) Single Transistor, NPN, 525 V, 2 A, 30 W, TO-252 (DPAK), Surface Mount ![Product image](https://novapart.co/image/farnell:3003873/) **URL**: https://novapart.co/products/KSC5402DTF/bipolar-bjt-single-transistor-npn-525-v-2-a-30-w **SKU**: KSC5402DTF **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.7460 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:525V; Transition Frequency ft:11MHz; Power Dissipation Pd:30W; DC Collector Current:2A; DC Current Gain hFE:6hFE; Transistor ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (15-Jan-2018) | | No. Of Pins | 3Pins | | Product Range | - | | Qualification | - | | Power Dissipation | 30W | | Transistor Mounting | Surface Mount | | Transistor Polarity | NPN | | Transition Frequency | 11MHz | | Transistor Case Style | TO-252 (DPAK) | | Dc Current Gain Hfe Min | 6hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 2A | | Collector Emitter Voltage Max | 525V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3003873/) ## **Is Now Part of** ## **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. **==> picture [197 x 217] intentionally omitted <==** **----- Start of picture text -----**
December 2009
D-PAK
Equivalent Circuit
v
C
1
TO-220
B
E 1
1.Base 2.Collector 3.Emitter
**----- End of picture text -----**
## **KSC5402D/KSC5402DT NPN Silicon Transistor, Planar Silicon Transistor** ## **Features** - High Voltage High Speed Power Switch Application - Wide Safe Operating Area - Built-in Free Wheeling Diode - Suitable for Electronic Ballast Application - Small Variance in Storage Time - Two Package Choices; D-PAK or TO-220 ## **Absolute Maximum Ratings** TA=25°C unless otherwise noted |**Symbol**|**Parameter**|**Value**|**Units**| |---|---|---|---| |VCBO|Collector-Base Voltage|1000|V| |VCEO|Collector-Emitter Voltage|450|V| |VEBO|Emitter-Base Voltage|12|V| |IC|Collector Current (DC)|2|A| |ICP|*Collector Current (Pulse)|5|A| |IB|Base Current (DC)|1|A| |IBP|*Base Current (Pulse)|2|A| |PC|Power Dissipation(TC=25°C) : D-PAK*
: TO-220|30
50|W
W| |TJ|Junction Temperature|150|°C| |TSTG|Storage Temperature|- 65 to 150|°C| - Pulse Test: Pulse Width=5ms, Duty Cycle<10% ## **Thermal Characteristics** TA=25°C unless otherwise noted |**Thermal Characteristics**|**Thermal Characteristics**TA=25°CA=25°C=25°C°CC unless otherwise noted|**Thermal Characteristics**TA=25°CA=25°C=25°C°CC unless otherwise noted|||| |---|---|---|---|---|---| |**Symbol**|**Parameter**||**Rating**||**Units**| ||||**TO-220**|**D-PAK**|| |RθJC|Thermal Resistance|Junction to Case|2.5|4.17*|°C/W| |RθJA||Junction to Ambient|62.5|50|°C/W| |TL|Maximum Lead Temperature for Soldering Purpose
; 1/8” from Case for 5 Seconds||270|270|°C| - Mounted on 1” square PCB (FR4 ro G-10 Material) © 2009 Fairchild Semiconductor Corporation KSC5402D/KSC5402DT Rev. C0 www.fairchildsemi.com 1 ## **Electrical Characteristics** TA=25°C unless otherwise noted |**Electrical**|**Characteristics **TA=25°C u|nless otherwise noted|nless otherwise noted||||| |---|---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test Condition**||**Min.**|**Typ.**|**Max.**|**Units**| |BVCBO|Collector-Base Breakdown
Voltage|IC=1mA, IE=0||1000|1090||V| |BVCEO|Collector-Emitter Breakdown
Voltage|IC=5mA, IB=0||450|525||V| |BVEBO|Emitter-Base Breakdown
Voltage|IE=1mA, IC=0||12|14||V| |ICES|Collector Cut-off Current|VCES=1000V, IEB=0|TA=25°C||0.03|100|μA| ||||TA=125°C||1.2|500|μA| |ICEO|Collector Cut-off Current|VCE=450V, VB=0|TA=25°C||0.3|100|μA| ||||TA=125°C||15|500|μA| |IEBO|Emitter Cut-off Current|VEB=10V, IC=0|||0.01|100|μA| |hFE|DC Current Gain|VCE=1V, IC=0.4A|TA=25°C|14|29||| ||||TA=125°C|8|17||| |||VCE=1V, IC=1A|TA=25°C|6|9||| ||||TA=125°C|4|6||| |VCE(sat)|Collector-Emitter Saturation
Voltage|IC=0.4, IB=0.04A|TA=25°C||0.25|0.6|V| ||||TA=125°C||0.4|1.0|V| |||IC=1A, IB=0.2A|TA=25°C||0.3|0.75|V| ||||TA=125°C||0.65|1.2|V| |VBE(sat)|Base-Emitter Saturation
Voltage|IC=0.4A, IB=0.04A|TA=25°C||0.78|1.0|V| ||||TA=125°C||0.65|0.9|V| |||IC=1A, IB=0.2A|TA=25°C||0.85|1.1|V| ||||TA=125°C||0.75|1.0|V| |Cib|Input Capacitance|VEB=8V, IC=0, f=1MHz|||330|500|pF| |Cob|Output Capacitance|VCB=10V, IE=0, f=1MHz|||35|100|pF| |fT|Current Gain Bandwidth
Product|IC=0.5A, VCE=10V|||11||MHz| |VF|Diode Forward Voltage|IF=1A|TA=25°C||0.86|1.5|V| |||IF=0.2A|TA=25°C||0.75|1.2|V| ||||TA=125°C||0.6||V| |||IF=0.4A|TA=25°C||0.8|1.3|V| ||||TA=125°C||0.65||V| © 2009 Fairchild Semiconductor Corporation KSC5402D/KSC5402DT Rev. C0 www.fairchildsemi.com 2 |**Electrical Characteristics**(Continued)TA=25°C unless otherwise noted|**Electrical Characteristics**(Continued)TA=25°C unless otherwise noted|**Electrical Characteristics**(Continued)TA=25°C unless otherwise noted|**Electrical Characteristics**(Continued)TA=25°C unless otherwise noted|**Electrical Characteristics**(Continued)TA=25°C unless otherwise noted|**Electrical Characteristics**(Continued)TA=25°C unless otherwise noted|**Electrical Characteristics**(Continued)TA=25°C unless otherwise noted|**Electrical Characteristics**(Continued)TA=25°C unless otherwise noted| |---|---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test Condition**||**Min.**|**Typ.**|**Max.**|**Units**| |tfr|Diode Froward Recvery Time
(di/dt=10A/μs)|IF=0.2A
IF=0.4A
IF=1A|||540
520
480||ns
ns
ns| |VCE(DSAT)|Dynamic Saturation Voltage|IC=0.4A, IB1=40mA
VCC=300V|@ 1μs||7.5||V| ||||@ 3μs||2.5||V| |||IC=1A, IB1=200mA
VCC=300|@ 1μs||11.5||V| ||||@ 3μs||1.5||V| |RESISTIVE LOAD SWITCHING (D.C<
10%, Pulse Width=20μs)|||||||| |tON|Turn On Time|IC=1A,
IB1=200mA,
IB2=150mA,
VCC=300V,
RL= 300Ω|TA=25°C||110|150|ns| ||||TA=125°C||135||ns| |tOFF|Turn Off Time||TA=25°C|0.95||1.25|μs| ||||TA=125°C||1.4||μs| |INDUCTIVE LOAD SWITCHING (VCC=15V)|||||||| |tSTG|Storage Time|IC=0.4A,
IB1=40mA,
IB2=200mA,
Vz=300V,
LC=200H|TA=25°C||0.56|0.65|μs| ||||TA=125°C||0.7||μs| |tF|Fall Time||TA=25°C||60|175|ns| ||||TA=125°C||75||ns| |tC|Cross-over Time||TA=25°C||90|175|ns| ||||TA=125°C||90||ns| |tSTG|Storage Time|IC=0.8A,
IB1=160mA,
IB2=160mA,
Vz=300V,
LC=200H|TA=25°C|||2.75|μs| ||||TA=125°C||3||μs| |tF|Fall Time||TA=25°C||110|175|ns| ||||TA=125°C||180||ns| |tC|Cross-over Time||TA=25°C||125|350|ns| ||||TA=125°C||185||ns| |tSTG|Storage Time|IC=1A,
IB1=200mA,
IB2=500mA,
VZ=300V,
LC=200μH|TA=25°C||1.1|1.2|μs| ||||TA=125°C||1.35||μs| |tF|Fall Time||TA=25°C||105|150|ns| ||||TA=125°C||75||ns| |tC|Cross-over Time||TA=25°C||125|150|ns| ||||TA=125°C||100||ns| © 2009 Fairchild Semiconductor Corporation KSC5402D/KSC5402DT Rev. C0 www.fairchildsemi.com 3 ## **Typical Performance Characteristics** **==> picture [448 x 582] intentionally omitted <==** **----- Start of picture text -----**
3.0
IB900mA = 1A VCE = 1V
2.5 800mA
700mA600mA 100 TJ=125℃
500mA
2.0 400mA TJ=25℃
300mA
1.5 200mA
100mA 10
1.0
0.5
IB = 0
0.0 1
0 1 2 3 4 5 6 1E-3 0.01 0.1 1
VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
VCE = 6V IC = 5 IB
100 TJ=125℃ 10
TJ=25℃
1
10
TJ=125℃
TJ=25℃
0.1
1
1E-3 0.01 0.1 1 1E-3 0.01 0.1 1
IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT
Figure 3. DC current Gain Figure 4. Collector-Emitter Saturation Voltage
10
IC = 5 IB IC = 10 IB
10
1
TJ=25℃ 1
TJ=125℃
TJ=125℃
TJ=25℃
0.1
0.1
1E-3 0.01 0.1 1 1E-3 0.01 0.1 1
IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT
, DC CURRENT GAIN
[A], COLLECTOR CURRENTIC hFE
(sat)[V], SATURATION VOLTAGE
, DC CURRENT GAINFE CE
h (sat), V
BE
V
(sat)[V], SATURATION VOLTAGE (sat)[V], SATURATION VOLTAGE
CE CE
(sat), V (sat), V
BE BE
V V
**----- End of picture text -----**
**Figure 5. Base-Emitter Saturation Voltage** **Figure 6. Collector-Emitter Saturation Voltage** © 2009 Fairchild Semiconductor Corporation KSC5402D/KSC5402DT Rev. C0 www.fairchildsemi.com 4 **Typical Performance Characteristics** (Continued) **==> picture [449 x 582] intentionally omitted <==** **----- Start of picture text -----**
10 1000
IC = 10 IB f=1MHz
Cib
1 100
TJ=25℃
TJ=125℃
Cob
0.1 10
1E-3 0.01 0.1 1 1 10 100
IC[A], COLLECTOR CURRENT REVERSE VOLTAGE [V]
Figure 7. Base-Emitter Saturation Voltage Figure 8. Collector Output Capacitance
2.0 550
TJ=25℃
1.5
2.0A
1.0 1.5A 500
1.0A
0.4A
IC=0.2A
0.5
450
0.0 0.0 0.5 1.0
1E-3 0.01 0.1 1
IC[A], COLLECTOR CURRENT IF [A], FORWARD CURRENT
Figure 9. Typical Collector Saturation Region Figure 10. Forward Recovery Time
10 IVPW=40CCC=5I=300VB1=2IμsB2
300
1 TJ=25℃ 200
TJ=125℃ TJ=125℃
100 TJ=25℃
0.10.01 0.1 1 0.4 0.6 0.8 1.0 1.2 1.4
IFD [A], CURRENT Ic [A], COLLECTOR CURRENT
(sat)[V], SATURATION VOLTAGE CAPACITANCE [pF]
CE
(sat), V
BE
V
COLLECTOR VOLTAGE [V]
[ns], FORWARD RECOVERY TIMEtfr
[ns], TIME
[V], VOLTAGEFD ton
V
**----- End of picture text -----**
**Figure 11. Diode Forward Voltage** **Figure 12. Resistive Switching Time, ton** © 2009 Fairchild Semiconductor Corporation KSC5402D/KSC5402DT Rev. C0 www.fairchildsemi.com 5 **Typical Performance Characteristics** (Continued) **==> picture [449 x 582] intentionally omitted <==** **----- Start of picture text -----**
850
2.0 IVPW=40CCC=5I=300VB1=2IμsB2 800 IVVLCCCCZ=10I=200=300V=15VB1μ=2IH B2
750
700
1.5 TJ=125℃
650
TJ=125℃
TJ=25℃ 600
1.0 TJ=25℃
550
0.4 0.6 0.8 1.0 1.2 1.4 0.4 0.6 0.8 1.0 1.2 1.4
Ic [A], COLLECTOR CURRENT Ic [A], COLLECTOR CURRENT
Figure 13. Resistive Switching Time, toff Figure 14. Inductive Switching Time, tsi
100 130
90 IC=10IB1=2IB2 120 IC=10IB1=2IB2
VVLCCCZ=200=300V=15VμH 110 VVLCCCZ=200=300V=15VμH
80
100 TJ=125℃
70 TJ=25℃ 90 TJ=25℃
TJ=125℃
60 80
70
50
60
0.4 0.6 0.8 1.0 1.2 1.4 0.4 0.6 0.8 1.0 1.2 1.4
Ic [A], COLLECTOR CURRENT Ic [A], COLLECTOR CURRENT
Figure 15. Inductive Switching Time, tfi Figure 16. Inductive Switching Time, tc
450
30 400 IVVLCCCCZ=5I=200=300V=15VB1=5IμHB2
TJ=125℃ 350
300 TJ=125℃
25 250
TJ=25℃ 200
20 IVVLCCCCZ=5I=200=300V=15VB1=5IμHB2 150100 TJ=25℃
50
0.4 0.6 0.8 1.0 1.2 1.4 0.4 0.6 0.8 1.0 1.2 1.4
Ic [A], COLLECTOR CURRENT Ic [A], COLLECTOR CURRENT
s], TIME
[tμoff [ns], TIMEtsi
[ns], TIMEtfi [ns], TIMEtC
s], TIME
[tμsi [ns], TIMEtfi
**----- End of picture text -----**
**Figure 17. Inductive Switching Time, tsi** **Figure 18. Inductive Switching Time, tfi** © 2009 Fairchild Semiconductor Corporation KSC5402D/KSC5402DT Rev. C0 www.fairchildsemi.com 6 **Typical Performance Characteristics** (Continued) **==> picture [448 x 581] intentionally omitted <==** **----- Start of picture text -----**
450 1.6
400350 IVVLCCCCZ=5I=200=300V=15VB1=5IμHB2 1.4 TJ=125℃
300 TJ=125℃ 1.2
250 TJ=25℃
1.0
200 TJ=25℃
150 0.8
100 0.6 IVVLCCCCZ=5I=200=300V=15VB1=2IμHB2
50
0.4 0.6 0.8 1.0 1.2 1.4 0.4 0.6 0.8 1.0 1.2 1.4
Ic [A], COLLECTOR CURRENT Ic [A], COLLECTOR CURRENT
Figure 19. Inductive Switching Time, tc Figure 20. Inductive Switching Time, tsi
200
160 IVVLCCCCZ=5I=200=300V=15VB1=2IμHB2 180 IVVLCCCCZ=5I=200=300V=15VB1=2IμHB2
140
160
120 TJ=25℃ 140 TJ=125℃
100 120
80 TJ=125℃ 100 TJ=25℃
80
60
60
40
0.4 0.6 0.8 1.0 1.2 1.4 0.4 0.6 0.8 1.0 1.2 1.4
Ic [A], COLLECTOR CURRENT Ic [A], COLLECTOR CURRENT
Figure 21. Inductive Switching Time, tfi Figure 22. Inductive Switching Time, tc
10 40
1μs
10μs
50μs 30
5ms 1ms
1 DC
20
0.1
10
0.01 0
10 100 1000 0 25 50 75 100 125 150
VCE[V], COLLECTOR-EMITTER VOLTAGE TC[℃], CASE TEMPERATURE
s], TIME
μ
[ns], TIMEtC [tsi
[ns], TIMEtfi [ns], TIMEtC
[A], COLLECTOR CURRENTIC [W], POWER DISSIPATIONPC
**----- End of picture text -----**
**Figure 23. Forward Bias Safe Operating Area** **Figure 24. Power Derating** © 2009 Fairchild Semiconductor Corporation KSC5402D/KSC5402DT Rev. C0 www.fairchildsemi.com 7 ## **Physical Dimension** **==> picture [289 x 406] intentionally omitted <==** **----- Start of picture text -----**
TO-220
9.90 ± 0.20 4.50 ± 0.20
(8.70)
ø3.60 ± 0.10 1.30 [+0.10] –0.05
1.27 ± 0.10 1.52 ± 0.10
0.80 ± 0.10 0.50 [+0.10] –0.05 2.40 ± 0.20
2.54TYP 2.54TYP
[2.54 ± 0.20] [2.54 ± 0.20]
10.00 ± 0.20
(45) °
0.10 ± 0.10 ±
(1.70) 1.30 2.80
0.20 (3.70) 0.20 ±
±
18.95MAX.
9.20 15.90
(1.46)
(3.00)
0.20
± (1.00)
0.30
±
13.08
10.08
**----- End of picture text -----**
Dimensions in Millimeters © 2009 Fairchild Semiconductor Corporation KSC5402D/KSC5402DT Rev. C0 www.fairchildsemi.com 8 ## **Physical Dimension** (Continued) ## D-PAK **==> picture [384 x 452] intentionally omitted <==** **==> picture [91 x 7] intentionally omitted <==** **----- Start of picture text -----**
Dimensions in Millimeters
**----- End of picture text -----**
© 2009 Fairchild Semiconductor Corporation KSC5402D/KSC5402DT Rev. C0 www.fairchildsemi.com 9 ## **TRADEMARKS** The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. |AccuPower
Auto-SPM
Build it Now
CorePLUS
CorePOWER
_CROSSVOLT_
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™*
™*
®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore
FETBench
FlashWriter®*
FPS
F-PFS
FRFET®
Global Power Resource
SM
Green FPS
Green FPS e-Series
G_max_™
GTO
IntelliMAX
ISOPLANAR
MegaBuck™
MICROCOUPLER
MicroFET
MicroPak
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM
PowerTrench®
PowerXS™
Programmable Active Droop
QFET®
QS
Quiet Series
RapidConfigure
™
Saving our world, 1mW/W/kW at a time™
SmartMax™
SMART START
SPM®
STEALTH™
SuperFET
SuperSOT
3
SuperSOT -6
SuperSOT -8
SupreMOS™
SyncFET™
Sync-Lock™
®*
The Power Franchise®
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TRUECURRENT *
SerDes
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XS™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Semiconductor reserves the right to make changes at anytime without notice to improve design.| |No Identification Needed|Full Production|Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at anytime without notice to improve the design.| |Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
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