# Bipolar (BJT) Single Transistor, NPN, 160 V, 1.2 A, 20 W, TO-225AA, Through Hole

![Product image](https://novapart.co/image/farnell:2453953/)

**URL**: https://novapart.co/products/KSC2690AYSTU/bipolar-bjt-single-transistor-npn-160-v-12-a-20-w
**SKU**: KSC2690AYSTU
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.2240
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency ft:155MHz; Power Dissipation Pd:20W; DC Collector Current:1.2A; DC Current Gain hFE:160hFE;

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 20W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transition Frequency | 155MHz |
| Transistor Case Style | TO-225AA |
| Dc Current Gain Hfe Min | 160hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 1.2A |
| Collector Emitter Voltage Max | 160V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2453953/)

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## **KSC2690/2690A** 

## **Audio Frequency High Frequency Power Amplifier** 

• Complement to KSA1220/KSA1220A 

**==> picture [117 x 93] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 TO-126<br>1. Emitter    2.Collector    3.Base<br>**----- End of picture text -----**<br>


## **NPN Epitaxial Silicon Transistor** 

**Absolute Maximum Ratings** TC=25°C unless otherwise noted 

|**Absolute**|**Maximum Ratings**TC=25°C unless otherwise noted|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Units**|
|VCBO|Collector-Base Voltage<br>: KSC2690<br>: KSC2690A|120<br>160|V<br>V|
|VCEO|Collector- Emitter Voltage<br>: KSC2690<br>: KSC2690A|120<br>160|V<br>V|
|VEBO|Emitter-Base Voltage|5|V|
|IC|Collector Current(DC)|1.2|A|
|ICP|*Collector Current(Pulse)|2.5|A|
|IB|Base Current(DC)|0.3|A|
|PC|Collector Dissipation(Ta=25°C)|1.2|W|
|PC|Collector Dissipation(TC=25°C)|20|W|
|TJ|Junction Temperature|150|°C|
|TSTG|Storage Temperature|- 55 ~ 150|°C|



- PW≤10ms, Duty Cycle≤50% 

**Electrical Characteristics** TC=25°C unless otherwise noted 

|**Symbol**|**Parameter**|**Test Condition**|**Min.**|**Typ.**<br>**M**|**ax.**<br>**Units**|
|---|---|---|---|---|---|
|ICBO|Collector Cut-off Current|VCB= 120V, IE= 0|||1<br>µA|
|IEBO|Emitter Cut-off Current|VEB= 3V, IC= 0|||1<br>µA|
|hFE1<br>hFE2|* DC Current Gain|VCE= 5V, IC= 5mA<br>VCE= 5V, IC = 0.3A|35<br>60|105<br>140<br>3|20|
|VCE(sat)|* Collector-Emitter Saturation Voltage|IC = 1A, IB= 0.2A||0.4<br>|0.7<br>V|
|VBE(sat)|* Base-Emitter Saturation Voltage|IC = 1A, IB= 0.2A||1<br>|1.3<br>V|
|fT|Current Gain Bandwidth Product|VCE= 5V, IC = 0.2A||155|MHz|
|Cob|Output Capacitance|VCB=10V, IE=0, f = 1MHz||19|pF|



- Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed 

## **hFE Classificntion** 

|**hFEClassificntion**||||
|---|---|---|---|
|Classification|R|O|Y|
|hFE2|60 ~ 120|100 ~ 200|160 ~ 320|



©2000 Fairchild Semiconductor International 

Rev. A, February 2000 

## **Typical Characteristics** 

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**----- Start of picture text -----**<br>
1.6 1000<br>Pulse Test VCE = 5V<br>1.4 Pulse Test<br>IB=10mA<br>1.2 IB=9mA<br>1.00.8 IB=8mAIB=7mAIIBB=6mA=5mAIB=4mA 100<br>0.6 IB=3mA 10<br>0.4 IB=2mA<br>0.2 IB=1mA<br>0.0 IB=0mA 1<br>0 10 20 30 40 50 60 70 80 0.0011E-3 0.01 0.1 1 10<br>VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT<br>Figure 1. Static Characteristic Figure 2. DC current Gain<br>10 1000<br>IC = 5 IB f = 1MHz<br>Pulse Test IE = 0<br>1 VBE(sat) 100<br>0.1 10<br>VCE(sat)<br>0.01 1<br>1E-3 0.01 0.1 1 10 1 10 100 1000<br>IC[A], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE<br>Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance<br>Collector-Emitter Saturation Voltage<br>1000 10<br>VPulse TestCE = 5V IC(max) Pulse<br>IC(max) DC<br>100 1<br>10 0.1<br>KSC2690 VCEO MAX KSC2690A<br>VCEO MAX<br>1 0.01<br>0.01 0.1 1 1 10 100 1000<br>IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE<br>Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area<br>Dissipation<br>Limited<br>10ms PW = 100us<br>S/b LimitedDC (PW = 50ms)<br>1ms<br>, DC CURRENT GAIN<br>FE<br>[A], COLLECTOR CURRENTIC h<br>(sat)[V], SATURATION VOLTAGECE [pF], CAPACITANCECob<br>(sat), V<br>BE<br>V<br>[A], COLLECTOR CURRENTIC<br>[MHz], CURRENT GAIN BANDWIDTH PRODUCTfT<br>**----- End of picture text -----**<br>


©2000 Fairchild Semiconductor International 

Rev. A, February 2000 

## **Typical Characteristics** (Continued) 

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**----- Start of picture text -----**<br>
160 32<br>140 28<br>120 24<br>100 20<br>80 16<br>60 12<br>40 8<br>20 4<br>0 0<br>0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>TC[oC], CASE TEMPERATURE TC[oC], CASE TEMPERATURE<br>S/b Limited<br>Dissipation Limited<br> DERATINGdT[%], IC<br>[W], POWER DISSIPATIONPC<br>**----- End of picture text -----**<br>


**Figure 7. Derating Curve of Safe Operating Areas** 

**Figure 8. Power Derating** 

©2000 Fairchild Semiconductor International 

Rev. A, February 2000 

## **Package Demensions** 

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**----- Start of picture text -----**<br>
TO-126<br>8.00 ±0.30 3.25 ±0.20<br>ø3.20 ±0.10<br>(1.00) (0.50)<br>0.75 ±0.10<br>1.75 ±0.20<br>1.60 ±0.10<br>0.75 ±0.10<br>#1<br>2.28TYP 2.28TYP 0.50 [+0.10] –0.05<br>[2.28±0.20] [2.28±0.20]<br>0.10<br>±<br>3.90<br>0.20<br>±<br>14.20MAX 11.00<br>0.20<br>0.30 ±<br>±<br>16.10<br>13.06<br>**----- End of picture text -----**<br>


Dimensions in Millimeters 

©2000 Fairchild Semiconductor International 

Rev. A, February 2000 

## **TRADEMARKS** 

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 

|ACEx™|HiSeC™|SuperSOT™-8|
|---|---|---|
|Bottomless™|ISOPLANAR™|SyncFET™|
|CoolFET™|MICROWIRE™|TinyLogic™|
|CROSSVOLT™|POP™|UHC™|
|E2CMOS™|PowerTrench®|VCX™|
|FACT™|QFET™||
|FACT Quiet Series™|QS™||
|FAST®|Quiet Series™||
|FASTr™|SuperSOT™-3||
|GTO™|SuperSOT™-6||



## **DISCLAIMER** 

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 

## **LIFE SUPPORT POLICY** 

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. 

As used herein: 

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 

## **PRODUCT STATUS DEFINITIONS** 

## **Definition of Terms** 

|**Datasheet Identification**|**Product Status**|**Definition**|
|---|---|---|
|Advance Information|Formative or In<br>Design|This datasheet contains the design specifications for<br>product development. Specifications may change in<br>any manner without notice.|
|Preliminary|First Production|This datasheet contains preliminary data, and<br>supplementary data will be published at a later date.<br>Fairchild Semiconductor reserves the right to make<br>changes at any time without notice in order to improve<br>design.|
|No Identification Needed|Full Production|This datasheet contains final specifications. Fairchild<br>Semiconductor reserves the right to make changes at<br>any time without notice in order to improve design.|
|Obsolete|Not In Production|This datasheet contains specifications on a product<br>that has been discontinued by Fairchild semiconductor.<br>The datasheet is printed for reference information only.|



©2000 Fairchild Semiconductor International 

Rev. E 

Product Folder - Fairchild P/N KSC2690A - NPN Epitaxial Silicon Transistor 

spSEARCH | Parametric | Cross Reference Fairchild Semiconductor GO space Product Folders and Applica spa spaHomespa >> Find products >> find products spa Products groups spaKSC2690A spa ~~R~~ elated Links NPN Epitaxial Silicon Transistor Analog and Mixed Request samples Signal Datasheet Contents Dotted line Discrete Download this How to order products Features | Applications | Product Interface datasheet Dotted line status/pricing/packaging | Models Product Change Notices Logic PDF (PCNs) Microcontrollers Non-Volatile SupportDotted line Memory Features e-mail this datasheet Dotted line Optoelectronics Distributor and field sales [EMarkets and representatives G Complement to KSA1220/KSA1220A applications Dotted line This pagePrint version Quality and reliability New products Product selection and Dotted line back to top Design tools parametric search Cross-reference Applications search 

technical information 

## **Audio Frequency High Frequency Power Amplifier** 

buy products technical support back to top my Fairchild company Product status/pricing/packaging 

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Product Product status Pricing* Package type Leads Packing method<br>KSC2690AYS Full Production $0.22 TO-126 3 BULK<br>KSC2690AOS Full Production $0.22 TO-126 3 BULK<br>KSC2690AOSTSTU Full Production $0.22 TO-126 3 RAIL<br>KSC2690AYSTSTU Full Production $0.22 TO-126 3 RAIL<br>KSC2690AYSTU Full Production $0.22 TO-126 3 RAIL<br>**----- End of picture text -----**<br>


* 1,000 piece Budgetary Pricing 

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Models 

**Software version** 

**Package & leads** 

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**Temperature range** 

Product Folder - Fairchild P/N KSC2690A - NPN Epitaxial Silicon Transistor 

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**----- Start of picture text -----**<br>
PSPICE<br>TO-126-3 Electrical/Thermal -25°C to 100°C 9 Mar 30, 2000<br>**----- End of picture text -----**<br>


||TO-126-3<br>Electrical/|Thermal||-25°C to 100°C<br>9<br>Mar 30, 2000|
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