# Bipolar (BJT) Single Transistor, NPN, 60 V, 700 mA, 800 mW, TO-92, Through Hole

![Product image](https://novapart.co/image/farnell:2825102/)

**URL**: https://novapart.co/products/KSC1008YBU/bipolar-bjt-single-transistor-npn-60-v-700-ma-800
**SKU**: KSC1008YBU
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.0390
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:50MHz; Power Dissipation Pd:800mW; DC Collector Current:700mA; DC Current Gain hFE:120hFE; Tra

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 800mW |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transition Frequency | 50MHz |
| Transistor Case Style | TO-92 |
| Dc Current Gain Hfe Min | 120hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 700mA |
| Collector Emitter Voltage Max | 60V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2825102/)

## **Is Now Part of** 

## **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** 

Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. 

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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## **KSC1008 NPN Epitaxial Silicon Transistor** 

## **Features** 

- Low-Frequency Amplifier Medium Speed Switching 

- High Collector-Base Voltage : VCBO = 80 V 

- Collector Current : IC = 700 mA 

- Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) 

- Non Suffix “-C” means Side Collector (1. Emitter 2. Base 3. Collector) 

- Complement to KSA708 

**==> picture [76 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 TO-92<br>**----- End of picture text -----**<br>


- KSC1008: 1. Emitter   2. Base   3. Collector KSC1008C: 1. Emitter   2. Collector   3. Base 

## **Ordering Information**[(1)] 

|**Part Number**|**Top Mark**|**Package**|**Packing Method**|
|---|---|---|---|
|KSC1008OBU|C1008 O-|TO-92 3L|Bulk|
|KSC1008YBU|C1008 Y-|TO-92 3L|Bulk|
|KSC1008YTA|C1008 Y-|TO-92 3L|Ammo, 2000 pcs|
|KSC1008CYTA|C1008 YC|TO-92 3L|Ammo, 2000 pcs|
|KSC1008GTA|C1008 G-|TO-92 3L|Ammo, 2000 pcs|



## **Note:** 

1. Affix “-C-” means center collector pin. Affix “-O-, -Y-, -G-” means hFE classification. Suffix “-BU” means bulk packing, straight lead form. Suffix “-TA” means tape and ammo packing, 0.200 in-line spacing lead form. 

## **Absolute Maximum Ratings** 

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCBO|Collector-Base Voltage|80|V|
|VCEO|Collector-Emitter Voltage|60|V|
|VEBO|Emitter-Base Voltage|8|V|
|IC|Collector Current|700|mA|
|TJ|Junction Temperature|150|°C|
|TSTG|Storage Temperature|-55 to 150|°C|



© 2001 Fairchild Semiconductor Corporation KSC1008 Rev. 1.1.0 

www.fairchildsemi.com 

## **Thermal Characteristics**[(2)] 

Values are at TA = 25°C unless otherwise noted. 

**Symbol Parameter Value Unit** Power Dissipation 800 mW PD Derate Above 25 ° C 6.4 mW/ ° C R θ JA Thermal Resistance, Junction-to-Ambient 156 ° C/W ~~<==~~ **Note:** 2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 

## **Electrical Characteristics** 

Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|BVCBO|Collector-Base Breakdown Voltage|IC= 100μA, IE= 0|80|||V|
|BVCEO|Collector-Emitter Breakdown Voltage|IC= 10 mA, IB= 0|60|||V|
|BVEBO|Emitter-Base Breakdown Voltage|IE= 10μA, IC= 0|8|||V|
|ICBO|Collector Cut-Off Current|VCB= 60 V, IE= 0|||0.1|μA|
|IEBO|Emitter Cut-Off Current|VEB= 5 V, IC= 0|||0.1|μA|
|hFE|DC Current Gain|VCE= 2 V, IC= 50 mA|40||400||
|VCE(sat)|Collector-Emitter Saturation Voltage|IC= 500 mA, IB= 50 mA||0.2|0.4|V|
|VBE(sat)|Base-Emitter Saturation Voltage|IC= 500 mA, IB= 50 mA||0.86|1.10|V|
|fT|Current Gain Bandwidth Product|VCE= 10 V, IC= 50 mA|30|50||MHz|
|Cob<br>~~ee~~|Output Capacitance<br>~~ee~~|VCB= 10 V, IE= 0,<br>f = 1 MHz<br>~~ee~~|~~ee~~|8<br>~~ee~~|~~ee~~|pF<br>~~ee~~|



© 2001 Fairchild Semiconductor Corporation KSC1008 Rev. 1.1.0 

www.fairchildsemi.com 

2 

## **Typical Performance Characteristics** 

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**----- Start of picture text -----**<br>
200 I B  = 1.8mA 240<br>180 TEE I B  = 1.6mA aan 220 VCE = 2V<br>160 I B  = 1.4mA 200<br>140 FoestrctoseantVgaSene= la get 180<br>120 |/(gaSSensCs came I B  = 1.2mA Seeeee 160<br>140<br>I B  = 1.0mA<br>100 Wo Se eean Cane 120<br>80 I B  = 0.8mA 100<br>| (Jao Sensee Seen RES<br>60 IB = 0.6mA 80<br>ZBEnSEeeES<br>60<br>40200 (QaRERSSESEEESAaESEESEEREEESyo I BI B = 0.4mA  = 0.2mA 40200<br>0 5 10 15 20 25 30 35 40 45 50 1 10 100 1000<br>VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT<br>Figure 1. Static Characteristic Figure 2. DC Current Gain<br>10 1000<br>IC=10IB V CE =2V<br>1 100<br>V BE (sat)<br>0.1 10<br>V CE (sat)<br>0.01 1<br>1 10 100 1000 0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE<br>Figure 3. Base-Emitter Saturation Voltage and Figure 4. Base-Emitter On Voltage<br>Collector-Emitter Saturation Voltage<br>100<br>f=1MHz<br>I E =0<br>10<br>1<br>1 10 100<br>VCB[V], COLLECTOR-BASE VOLTAGE<br>, DC CURRENT GAIN<br>FE<br>h<br>[mA], COLLECTOR CURRENTIC<br>(sat)[V], SATURATION VOLTAGE<br>CE<br>[mA], COLLECTOR CURRENTIC<br>(sat), V<br>BE<br>V<br>[pF],CAPACTIANCE<br>ob<br>C<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 5. Collector Output Capacitance<br>**----- End of picture text -----**<br>


© 2001 Fairchild Semiconductor Corporation KSC1008 Rev. 1.1.0 

www.fairchildsemi.com 

3 

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ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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