# Bipolar (BJT) Single Transistor, PNP, 120 V, 50 mA, 500 mW, TO-92, Through Hole

![Product image](https://novapart.co/image/farnell:3368632/)

**URL**: https://novapart.co/products/KSA992FATA/bipolar-bjt-single-transistor-pnp-120-v-50-ma-500
**SKU**: KSA992FATA
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.0480
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | KSA992 |
| Qualification | - |
| Power Dissipation | 500mW |
| Transistor Mounting | Through Hole |
| Transistor Polarity | PNP |
| Transition Frequency | 50MHz |
| Transistor Case Style | TO-92 |
| Dc Current Gain Hfe Min | 300hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 50mA |
| Collector Emitter Voltage Max | 120V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3368632/)

**DATA SHEET Share Feedback** Your Opinion Matters **www.onsemi.com** PNP Epitaxial Silicon Transistor KSA992 1. Emitter 2. Collector 3. Base **Features** ~~ay.~~ 1 23 1 2  Audio Frequency Low-Noise Amplifier 3  Complement to KSC1845 **TO-92 3 4.825x4.76CASE 135AN TO-92 3 4.83x4.76LEADFORMED**  These are Pb-Free Devices **CASE 135AR** 

- These are Pb-Free Devices 

**MAXIMUM RATINGS** (Values are at TA = 25 C unless otherwise noted.) 

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Symbol Parameter Value Unit<br>VCBO Collector-Base Voltage −120 V<br>VCEO Collector-Emitter Voltage −120 V<br>VEBO Emitter-Base Voltage −5 V<br>IC Collector Current −50 mA<br>IB Base Current −10 mA<br>TJ Junction Temperature 150 C<br>TSTG Storage Temperature −55 to C<br>150<br>=<br>Stresses exceeding those listed in the Maximum Ratings table may damage the<br>device. If any of these limits are exceeded, device functionality should not be<br>assumed, damage may occur and reliability may be affected.<br>**----- End of picture text -----**<br>


## **THERMAL CHARACTERISTICS** 

(Values are at TA = 25 C unless otherwise noted.) (Note 2) 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|PD|Power Dissipation|500|mW|
||Derate Above 25C|4|mW/C|
|R JA|Thermal Resistance,<br>Junction-to-Ambient|250|C/W|



2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 

## **MARKING DIAGRAMS** 

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AA9 AA9<br>92X 92X<br>YWW YWW<br>A = Assembly Code<br>A992 = Device Code<br>X = F / FA / FB<br>YWW = Date Code<br>**----- End of picture text -----**<br>


**ORDERING INFORMATION Device Package Shipping** KSA992FTA TO-92 3 LF 2000 / Fan-Fold (Pb-Free) KSA992FATA TO-92 3 LF 2000 / Fan-Fold (Pb-Free) ~~===~~ **DISCONTINUED** (Note 1) KSA992FBU TO-92 3 10000 Units / (Pb-Free) Bulk Bag KSA992FBTA TO-92 3 LF 2000 / Fan-Fold (Pb-Free) +-- ~~+~~ 

1. **DISCONTINUED:** These devices are not available. Please contact your **onsemi** representative for information. The most current information on these devices may be available on www.onsemi.com. 

Publication Order Number: 

**1** 

 Semiconductor Components Industries, LLC, 2004 **January, 2026 − Rev. 5** 

**KSA992/D** 

**KSA992** 

**ELECTRICAL CHARACTERISTICS** (Values are at TA = 25 C unless otherwise noted.) 

|**ELECTRICAL CHARACTERISTICS**|**ELECTRICAL CHARACTERISTICS**(Values are at TA = 25 C unless otherwise noted.)|(Values are at TA = 25 C unless otherwise noted.)A = 25 C unless otherwise noted.)= 25 C unless otherwise noted.)C unless otherwise noted.)C unless otherwise noted.)|||||
|---|---|---|---|---|---|---|
|**Symbol**<br>~~a~~|**Parameter**<br>~~a~~<br>~~a~~|**Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|ICBO<br>~~a~~|Collector Cut-Off Current<br>~~a~~<br>~~a~~|VCB= −120 V, IE= 0|−|−|−50|nA|
|ICEO<br>~~a~~|Collector Cut-Off Current<br>~~a~~<br>~~a~~|VCE= −100 V, IB= 0<br>~~a~~<br>~~a~~|−<br>~~a~~<br>~~a~~|−<br>~~a~~<br>~~a~~|−1<br>~~a~~<br>~~a~~|A<br>~~a~~<br>~~a~~|
|IEBO<br>~~a~~<br>~~—~~|Emitter Cut-Off Current<br>~~a~~|VEB= −5 V, IC= 0<br>~~a~~<br>~~a~~|−<br>~~a~~<br>~~ae a~~|−<br>~~a~~<br>~~a~~|−50<br>~~a~~|nA<br>~~a~~|
|hFE1<br>~~a~~<br>~~—~~|DC Current Gain<br>~~a~~|VCE= −6 V, IC= −0.1 mA<br>~~a~~<br>~~a~~|150<br>~~a~~<br>~~ae a~~|500<br>~~a~~<br>~~a~~|−<br>~~a~~|~~a~~|
|hFE2<br>~~a~~<br>~~—~~||VCE= −6 V, IC= −1 mA<br>~~a~~<br>~~a~~<br>~~a~~|300<br>~~a~~<br>~~ae a~~<br>~~a~~|450<br>~~a~~<br>~~a~~<br>~~a~~|600<br>~~a~~<br>~~a~~|~~a~~<br>~~a~~|
|VBE(on)<br>~~—~~<br>~~a~~|Base-Emitter On Voltage<br>~~a~~<br>~~a~~|VCE= −6 V, IC= −1 mA<br>~~a~~|−0.55<br>~~ae a~~|−0.61<br>~~a~~|−0.65|V|
|VCE(sat)<br>~~a~~|Collector-Emitter Saturation Voltage<br>~~a~~<br>~~a~~|IC= −10 mA, IB= −1 mA|−|−0.09|−0.30|V|
|fT<br>~~a~~|Current Gain Bandwidth Product<br>~~a~~<br>~~a~~|VCE= −6 V, IC= −1 mA|50|100|−|MHz|
|Cob<br>~~a~~|Output Capacitance<br>~~a~~<br>~~a~~|VCB= −30 V, IE= 0, f = 1 MHz|−|2|3|pF|
|NF<br>~~a~~|Noise Figure<br>~~eee~~|VCE= −5 V, IC= −1.0 mA,<br>RS= 100 k<br>f = 1 kHz<br>~~eee~~|−<br>~~eee~~|7<br>~~eee~~|−<br>~~eee~~|dB<br>~~eee~~|



## **hFE CLASSIFICATION** 

|**hFE CLASSIFICATIONFE CLASSIFICATIONCLASSIFICATION**||||
|---|---|---|---|
|**Classification**|**F**|**FA**|**FB**|
|hFE2|300~600|300~470|430~600|



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**KSA992** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
−1.0 −10<br>IB = −1.2 A IB = −1.2 A IB = −24 A I B  = −20 A<br>pe | | po<br>−0.8 IB = −1.0 A −8 IB = −16 A<br>IB = −0.8 A<br>−0.6 −6 IB = −12 A<br>I B  = −0.6 A<br>−0.4 −4 I B  = −8 A<br>pata 2/22<br>IB = −0.4 A<br>IB = −4 A<br>−0.2 −2<br>2a IB = −0.2 A 2 /AnEee<br>pe er Bao<br>IB = 0 IB = 0<br>0.0 0<br>Pt i tT | tT | yey i | Tt T Tt ey<br>0 −20 −40 −60 −80 −100 0 −1 −2 −3 −4 −5<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) VCE, COLLECTOR-EMITTER VOLTAGE (V)<br>Figure 1. Static Characteristic Figure 2. Static Characteristic<br>1000 −10<br>VCE = −6 V IC = 10 − IB<br>800 RE a te<br>PTI TTI ETE PT TET −1 PCIE VBE(sat) IE<br>600<br>400<br>CCTCTs) −0.1 Fe VCE(sat)<br>CCAHTE<br>200 LIN ATPSSAT P<br>ETE TTI PTEFET T T TTN Seea<br>0 PTI PTI PTT ETT −0.01 PT HIE TTP ETT<br>−0.01 −0.1 −1 −10 −100 −0.1 −1 −10 −100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 3. DC Current Gain Figure 4. Base-Emitter Saturation Voltage and<br>Collector-Emitter Saturation Voltage<br>10 1000<br>IE = 0 VCE = −6 V<br>f = 1 MHz<br>PS th pe<br>100<br>PCTS an |et |<br>1<br>SSeS ee ee<br>ER 10<br>0.1 CCCI 1<br>PT ETHIE TPT<br>−1 −10 CA −100 CA −1000 0 en 1 erent 10 100<br>VCB, COLLECTOR-BASE VOLTAGE (V) IE, COLLECTOR CURRENT (mA)<br>, COLLECTOR CURRENT (mA) , COLLECTOR CURRENT (mA)<br>IC IC<br>(sat), SATURATION<br>BE<br>VOLTAGE (V)<br>, DC CURRENT GAIN<br>FE<br>h (sat), V<br>CE<br>V<br>, CAPACITANCE (pF) PRODUCT (MHz)<br>ob<br>C<br>, CURRENT GAIN-BANDWIDTH<br>fT<br>**----- End of picture text -----**<br>


**Figure 5. Collector Output Capacitance** 

**Figure 6. Current Gain Bandwidth Product** 

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**KSA992** 

**TYPICAL PERFORMANCE CHARACTERISTICS** (continued) 

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800<br>700<br>| | | |<br>600<br>po | | |<br>500<br>po of | | |<br>400<br>Pp INP |<br>300<br>Nee<br>200<br>po | | NT<br>100<br>pot |PN<br>Nee<br>0<br>0 25 50 75 100 125 150 175<br>Ta, AMBIENT TEMPERATURE (C)<br>, POWER DISSIPATION (mW)<br>C<br>P<br>**----- End of picture text -----**<br>


**Figure 7. Power Derating** 

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**KSA992** 

## **REVISION HISTORY** 

|**Revision**<br>**Description of Changes**<br>**Date**<br>5<br>KSA992FBTA, KSA992FBU OPNs Marked as Discontinued.<br>1/16/2026<br>This document has undergone updates prior to the inclusion of this revision history table. The changes tracked here only reflect updates made<br>~~—~~|
|---|
|on the noted approval dates.|



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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**TO−92 3 4.825x4.76** CASE 135AN ISSUE O 

DATE 31 JUL 2016 

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**----- Start of picture text -----**<br>
Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98AON13880G Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: TO−92 3 4.825X4.76 PAGE 1 OF 1<br>**----- End of picture text -----**<br>


**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2016 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

## **TO−92 3 4.83x4.76 LEADFORMED** 

CASE 135AR ISSUE O 

DATE 30 SEP 2016 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON13879G** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: TO−92 3 4.83X4.76 LEADFORMED PAGE 1 OF 1** 

**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

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© Semiconductor Components Industries, LLC, 2016 

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