# Bipolar (BJT) Single Transistor, PNP, 300 V, 100 mA, 7 W, TO-225AA, Through Hole

![Product image](https://novapart.co/image/farnell:2453937/)

**URL**: https://novapart.co/products/KSA1381ESTU/bipolar-bjt-single-transistor-pnp-300-v-100-ma-7-w
**SKU**: KSA1381ESTU
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.2320
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-300V; Transition Frequency ft:150MHz; Power Dissipation Pd:7W; DC Collector Current:-100mA; DC Current Gain hFE:100hFE

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (27-Jun-2024) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 7W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | PNP |
| Transition Frequency | 150MHz |
| Transistor Case Style | TO-225AA |
| Dc Current Gain Hfe Min | 100hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 100mA |
| Collector Emitter Voltage Max | 300V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2453937/)

## **Is Now Part of** 

## **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** 

Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. 

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

**==> picture [49 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
March 2008<br>**----- End of picture text -----**<br>


## **2SA1381/KSA1381 PNP Epitaxial Silicon Transistor** 

## **Applications** 

- Audio, Voltage Amplifier and Current Source 

- CRT Display, Video Output 

- General Purpose Amplifier 

## **Features** 

- High Voltage : VCEO= -300V 

• Low Reverse Transfer Capacitance : Cre= 2.3pF at VCB = -30V 1 TO-126 • Excellent Gain Linearity for low THD 1. Emitter    2.Collector    3.Base 

- High Frequency: 150MHz 

- Full thermal and electrical Spice models are available 

- • Complement to 2SC3503/KSC3503 

|**Absolute Maximum Ratings***|**Absolute Maximum Ratings*Ta = 25°C unless otherwise noted**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Ratings**|**Units**|
|BVCBO|Collector-Base Voltage|-300|V|
|BVCEO|Collector-Emitter Voltage|-300|V|
|BVEBO|Emitter-Base Voltage|-5|V|
|IC|Collector Current(DC)|-100|mA|
|ICP|Collector Current(Pulse)|-200|mA|
|PC|Total Device Dissipation, TC=25°C<br>TC=125°C|7<br>1.2|W<br>W|
|TJ, TSTG|Junction and Storage Temperature|- 55 ~ +150|°C|



* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 

**Thermal Characteristics*** Ta=25°C unless otherwise noted **Symbol Parameter Max. Units** RθJC Thermal Resistance, Junction to Case 17.8 °C/W ~~es~~ * Device mounted on minimum pad size **hFE Classification** Classification C D E F hFE 40 ~ 80 60 ~ 120 100 ~ 200 160 ~ 320 ~~eo~~ 

© 2008 Fairchild Semiconductor Corporation 2SA1381/KSA1381 Rev. A1 

www.fairchildsemi.com 

1 

## **Electrical Characteristics*** Ta=25°C unless otherwise noted 

|**Electrica**|**Characteristics***Ta=25°C unless other|wise noted|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Condition**|**Min.**|**Typ.**|**Max.**|**Units**|
|BVCBO|Collector-Base Breakdown Voltage|IC= - 10µA, IE= 0|- 300|||V|
|BVCEO|Collecto- Emitter Breakdown Voltage|IC= - 1mA, IB= 0|- 300|||V|
|BVEBO|Emitter-Base Breakdown Voltage|IE= - 10µA, IC= 0|- 5|||V|
|ICBO|Collector Cut-off Current|VCB= - 200V, IE= 0|||- 0.1|µA|
|IEBO|Emitter Cut-off Current|VEB= - 4V, IC= 0|||- 0.1|µA|
|hFE|DC Current Gain|VCE= - 10V, IC= - 10mA|40||320||
|VCE(sat)|Collector-Emitter Saturation Voltage|IC= - 20mA, IB= - 2mA|||- 0.6|V|
|VBE(sat)|Base-Emitter Saturation Voltage|IC= - 20mA, IB= - 2mA|||- 1|V|
|fT|Current Gain Bandwidth Product|VCE= - 30V, IC= - 10mA||150||MHz|
|Cob|Output Capacitance|VCB= - 30V, f = 1MHz||3.1||pF|
|Cre|Reverse Transfer Capacitance|VCB= - 30V, f = 1MHz||2.3||pF|



* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% 

## **Ordering Information** 

|**Part Number***|**Marking**|**Package**|**Packing Method**|**Remarks**|
|---|---|---|---|---|
|2SA1381CSTU|2SA1381C|TO-126|TUBE|hFE1 C grade|
|2SA1381DSTU|2SA1381D|TO-126|TUBE|hFE1 D grade|
|2SA1381ESTU|2SA1381E|TO-126|TUBE|hFE1 E grade|
|2SA1381FSTU|2SA1381F|TO-126|TUBE|hFE1 F grade|
|KSA1381CSTU|A1381C|TO-126|TUBE|hFE1 C grade|
|KSA1381DSTU|A1381D|TO-126|TUBE|hFE1 D grade|
|KSA1381ESTU|A1381E|TO-126|TUBE|hFE1 E grade|
|KSA1381FSTU|A1381F|TO-126|TUBE|hFE1 F grade|



*  1. Affix “-S-” means the standard TO126 Package.(see package dimensions). If the affix is ”-STS-” instead of “-S-”, that mean the short-lead TO126 package. 

2. Suffix “-TU” means the tube packing, The Suffix “TU” could be replaced to other suffix character as packing method. 

© 2008 Fairchild Semiconductor Corporation 2SA1381/KSA1381 Rev. A1 

www.fairchildsemi.com 

2 

## **Typical Characteristics** 

**==> picture [439 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
-20 IB = -140µA -10<br>IB = -120µA IB = -60µA<br>-16 IB = -50µA<br>IB = -100µA -8<br>-12 IB = -80µA IB = -40µA<br>-6<br>IB = -60µA IB = -30µA<br>-8<br>-4<br>IB = -40µA IB = -20µA<br>-4 IB = -20µA -2 IB = -10µA<br>-0 IB = 0µA IB = 0µA<br>-0 -2 -4 -6 -8 -10 -0<br>-0 -20 -40 -60 -80 -100<br>VCE[V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE<br>[A], COLLECTOR CURRENTIC [A], COLLECTOR CURRENTIC<br>**----- End of picture text -----**<br>


**Figure 1. Static Characteristic** 

**Figure 2. Static Characteristic** 

**==> picture [204 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
1k<br>VCE = -10V<br>100<br>10<br>-0.1 -1 -10 -100<br>IC[mA], COLLECTOR CURRENT<br>, DC CURRENT GAIN<br>FE<br>h<br>**----- End of picture text -----**<br>


**Figure 3. DC current Gain** 

**==> picture [183 x 152] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>VCE = -30V<br>100<br>10<br>1<br>-0.1 -1 -10 -100 -1000<br>IC[mA], COLLECTOR CURRENT<br>(MHz), CURRENT GAIN BANDWIDTH PRODUCTfT<br>**----- End of picture text -----**<br>


**Figure 5. Current Gain Bandwidth Product** 

**==> picture [214 x 385] intentionally omitted <==**

**----- Start of picture text -----**<br>
-10<br>IC = 10 IB<br>-1 VBE(sat)<br>-0.1 VCE(sat)<br>-0.01<br>-0.1 -1 -10 -100<br>IC[mA], COLLECTOR CURRENT<br>Figure 4. Base-Emitter Saturation Voltage<br>Collector-Emitter Saturation Voltage<br>-160<br>-140 VCE = -10V<br>-120<br>-100<br>-80<br>-60<br>-40<br>-20<br>-0<br>-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2<br>VBE[V], BASE-EMITTER VOLTAGE<br>(sat)[V], SATURATION VOLTAGE<br>CE<br>(sat), V<br>BE<br>V<br>[mA], COLLECTOR CURRENTIC<br>**----- End of picture text -----**<br>


**Figure 6. Base-Emitter On Voltage** 

© 2008 Fairchild Semiconductor Corporation 2SA1381/KSA1381 Rev. A1 

www.fairchildsemi.com 

3 

**Typical Characteristics** (Continued) 

**==> picture [441 x 377] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 100<br>IE=0 f=1MHz<br>f=1MHz<br>10 10<br>1 1<br>0.1 0.1<br>-0.1 -1 -10 -100 -1000 -0.1 -1 -10 -100 -1000<br>VCB[V], COLLECTOR-BASE VOLTAGE VCB[V], COLLECTOR-BASE VOLTAGE<br>Figure 7. Collector Output Capacitance Figure 8. Reverse Transfer Capacitance<br>1000 8<br>7<br>IC MAX. (Pulse)<br>6<br>IC MAX.<br>100<br>5 Tc=25oC<br>4<br>1ms<br>10ms 3<br>10<br>2<br>1 TC=125oC<br>1 0<br>1 10 100 1000 0 25 50 75 100 125 150 175<br>VCE[V], COLLECTOR-EMITTER VOLTAGE T[oC], TEMPERATURE<br>C)o<br>DC (Ta = 25<br>DC (Tc = 25C)o<br>500µs<br>[pF], CAPACITANCE [pF], CAPACITANCE<br>ob re<br>C C<br>[mA], COLLECTOR CURRENTIC [W], POWER DISSIPATIONPC<br>**----- End of picture text -----**<br>


**Figure 9. Safe Operating Area** 

**Figure 10. Power Derating** 

© 2008 Fairchild Semiconductor Corporation 2SA1381/KSA1381 Rev. A1 

www.fairchildsemi.com 

4 

**==> picture [476 x 434] intentionally omitted <==**

**----- Start of picture text -----**<br>
[8.30] [3.45]<br>7.70 3.05<br>[4.00]<br>3.80<br>[11.20]<br>10.80<br> 14.20 MAX<br>3.20<br> 1.35  [1.95]<br>1.55<br>[1.70]<br>1.50  1.00<br>E<br>D<br>[0.85]<br>0.65 [ 3X ]<br>#1<br>2.29 0.254 [M] [0.60]<br>0.45 [ 3X ]<br>TOP VIEW SIDE VIEW<br> 3°<br>PRODUCTION  TERMINAL  TERMINAL<br>CODE LENGTH "D" LENGTH "E"<br>TSSTU 3.45 - 4.05 6.45-7.45<br>TSTU 2.36 - 2.96 5.36-6.36<br>FRONT VIEW NONE<br>12.76 - 13.36 15.76-16.76<br>NOTES: (STD LENGTH)<br>**----- End of picture text -----**<br>


- A.     NO INDUSTRY STANDARD APPLIES TO THIS PACKAGE B.     ALL DIMENSIONS ARE IN MILLIMETERS C.     DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR PROTRUSIONS 

**==> picture [99 x 44] intentionally omitted <==**

> D FOR TERMINAL LENGTH "D", REFER TO TABLE 

> E FOR TERMINAL LENGTH "E", REFER TO TABLE F.     DRAWING FILENAME: MKT-TO126AArev2 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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