# Bipolar (BJT) Single Transistor, PNP, 180 V, 100 mA, 8 W, TO-126, Through Hole

![Product image](https://novapart.co/image/farnell:3368631/)

**URL**: https://novapart.co/products/KSA1142OSTU/bipolar-bjt-single-transistor-pnp-180-v-100-ma-8-w
**SKU**: KSA1142OSTU
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.3620
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (15-Jan-2018) |
| No. Of Pins | 3Pins |
| Product Range | KSA1142 |
| Qualification | - |
| Power Dissipation | 8W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | PNP |
| Transition Frequency | 180MHz |
| Transistor Case Style | TO-126 |
| Dc Current Gain Hfe Min | 100hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 100mA |
| Collector Emitter Voltage Max | 180V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3368631/)

**==> picture [111 x 35] intentionally omitted <==**

## **KSA1142** 

## **Audio Frequency Power Amplifier High Freqency Power Amplifier** 

- Complement to KSC2682 

**==> picture [117 x 93] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 TO-126<br>1. Emitter    2.Collector    3.Base<br>**----- End of picture text -----**<br>


## **PNP Epitaxial Silicon Transistor** 

## **Absolute Maximum Ratings** TC=25°C unless otherwise noted 

|**Absolute Ma**|**ximum Ratings **TC=25°C unless otherwise noted|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Ratings**|**Units**|
|VCBO|Collector-Base Voltage|- 180|V|
|VCEO|Collector-Emitter Voltage|- 180|V|
|VEBO|Emitter-Base Voltage|- 5|V|
|IC|Collector Current|- 100|mA|
|PC|Collector Dissipation (Ta=25°C)|1.2|W|
|PC|Collector Dissipation (TC=25°C)|8|W|
|TJ|Junction Temperature|150|°C|
|TSTG|Storage Temperature|- 55 ~ 150|°C|



**Electrical Characteristics** TC=25°C unless otherwise noted 

|**Elect**|**rical Characteristics**TC=25°C unles|s otherwise noted||||
|---|---|---|---|---|---|
|**Symb**|**ol**<br>**Parameter**|**Test Condition**|**Min.**|**Typ.**<br>**M**|**ax.**<br>**Units**|
|ICBO|Collector Cut-off Current|VCB= - 180V, IE= 0||-|1<br>µA|
|IEBO|Emitter Cut-off Current|VEB= - 3V, IC = 0||-|1<br>µA|
|hFE1<br>hFE2|* DC Current Gain|VCE= - 5V, IC= - 1mA<br>VCE= - 5V, IC = - 10mA|90<br>100|200<br>200<br>3|20|
|VCE(sa|t)<br>* Collector-Emitter Saturation Voltage|IC = - 50mA, IB= - 5mA||- 0.16<br>-|0.5<br>V|
|VBE(sa|t)<br>* Base-Emitter Saturation Voltage|IC = - 50mA, IB= - 5mA||- 0.8<br>-|1.5<br>V|
|fT|Current Gain Bandwidth Product|VCE= - 10V, IC = - 20mA||180|MHz|
|Cob|Output Capacitance|VCB= - 10V, IE= 0, f=1MHz||4.5|7<br>pF|
|NF|Noise Figure|VCE= - 10V, IC= - 1mA<br>RS= 10kΩ, f = 1MHz||4|dB|



- Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed 

## **hFE Classification** 

|Classification|O|Y|
|---|---|---|
|hFE2|100 ~ 200|160 ~ 320|



©2000 Fairchild Semiconductor International 

Rev. A, February 2000 

## **Typical Characteristics** 

**==> picture [428 x 598] intentionally omitted <==**

**----- Start of picture text -----**<br>
-160 1000<br>Pulse Test<br>-140 VCE = -5V<br>Pulse Test<br>-120<br>-100 IB = -500㎂ IB = -450㎂ IB = -400㎂ 100<br>IB = -350㎂<br>-80<br>-60<br>10<br>-40<br>IB = -100㎂<br>-20 IB = -50㎂<br>IB = 0<br>0 1<br>0 -20 -40 -60 -80 -100 -120 -140 -160 -0.1 -1 -10 -100<br>VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT<br>Figure 1. Static Characteristic Figure 2. DC current Gain<br>-10 100<br>IC = 10 IB f=1.0MHz<br>Pulse Test IE=0(COB)<br>IE=0(CIB)<br>-1 VBE(sat) Cib<br>10<br>-0.1<br>VCE(sat)<br>Cob<br>-0.010.1 1 10 100 1 -1 -10 -100 -1000<br>VCB(v), COLLECTOR-BASE VOLTAGE<br>IC[mA], COLLECTOR CURRENT VCB(v), EMITTER-BASE VOLTAGE<br>Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance<br>Collector-Emitter Saturation Voltage<br>1000 -1000<br>VCE = -10V<br>IC (DC) Max. 10ms<br>-100<br>100<br>-10<br>10 -1<br>-1 -10 -100 -1 -10 -100 -1000<br>IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE<br>Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area<br>IB = -200㎂<br>IB = -150㎂<br>IB = -250㎂<br>IB = -300㎂<br>LimitedDissipation DC (50ms)<br>S/b<br>Limited<br>PW=1ms<br>, DC CURRENT GAIN<br>FE<br>h<br>Ic[mA], COLLECTOR CURRENT<br>(PF),CAPACITANCEib<br>(sat)[V], SATURATION VOLTAGE<br>CE (PF)C<br>ob<br>C<br>(sat), V<br>BE<br>V<br>[mA], COLLECTOR CURRENTIC  MAX.<br>VCEO<br>(MHz), CURRENT GAIN BANDWIDTH PRODUCTfT<br>**----- End of picture text -----**<br>


©2000 Fairchild Semiconductor International 

Rev. A, February 2000 

## **Typical Characteristics** (Continued) 

**==> picture [425 x 181] intentionally omitted <==**

**----- Start of picture text -----**<br>
160 10<br>140<br>8<br>120<br>100<br>6<br>80<br>60 4<br>40<br>2<br>20<br>0 0<br>0 50 100 150 200 0 50 100 150 200 250<br>TC[oC], CASE TEMPERATURE TC[oC], CASE TEMPERATURE<br>S/b Limited<br>Dissipation Limited<br>DERATINGdT(%),Ic<br>[W], POWER DISSIPATIONPC<br>**----- End of picture text -----**<br>


**Figure 7. Derating Curve of Safe Operating Areas** 

**Figure 8. Power Derating** 

©2000 Fairchild Semiconductor International 

Rev. A, February 2000 

## **Package Demensions** 

**==> picture [289 x 402] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-126<br>8.00 ±0.30 3.25 ±0.20<br>ø3.20 ±0.10<br>(1.00) (0.50)<br>0.75 ±0.10<br>1.75 ±0.20<br>1.60 ±0.10<br>0.75 ±0.10<br>#1<br>2.28TYP 2.28TYP 0.50 [+0.10] –0.05<br>[2.28±0.20] [2.28±0.20]<br>0.10<br>±<br>3.90<br>0.20<br>±<br>14.20MAX 11.00<br>0.20<br>0.30 ±<br>±<br>16.10<br>13.06<br>**----- End of picture text -----**<br>


Dimensions in Millimeters 

©2000 Fairchild Semiconductor International 

Rev. A, February 2000 

## **TRADEMARKS** 

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 

|ACEx™|HiSeC™|SuperSOT™-8|
|---|---|---|
|Bottomless™|ISOPLANAR™|SyncFET™|
|CoolFET™|MICROWIRE™|TinyLogic™|
|CROSSVOLT™|POP™|UHC™|
|E2CMOS™|PowerTrench®|VCX™|
|FACT™|QFET™||
|FACT Quiet Series™|QS™||
|FAST®|Quiet Series™||
|FASTr™|SuperSOT™-3||
|GTO™|SuperSOT™-6||



## **DISCLAIMER** 

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 

## **LIFE SUPPORT POLICY** 

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. 

As used herein: 

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 

## **PRODUCT STATUS DEFINITIONS** 

## **Definition of Terms** 

|**Datasheet Identification**|**Product Status**|**Definition**|
|---|---|---|
|Advance Information|Formative or In<br>Design|This datasheet contains the design specifications for<br>product development. Specifications may change in<br>any manner without notice.|
|Preliminary|First Production|This datasheet contains preliminary data, and<br>supplementary data will be published at a later date.<br>Fairchild Semiconductor reserves the right to make<br>changes at any time without notice in order to improve<br>design.|
|No Identification Needed|Full Production|This datasheet contains final specifications. Fairchild<br>Semiconductor reserves the right to make changes at<br>any time without notice in order to improve design.|
|Obsolete|Not In Production|This datasheet contains specifications on a product<br>that has been discontinued by Fairchild semiconductor.<br>The datasheet is printed for reference information only.|



©2000 Fairchild Semiconductor International 

Rev. E 

Product Folder - Fairchild P/N KSA1142 - PNP Epitaxial Silicon Transistor 

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## Home >> Find products >> 

## **KSA1142** 

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## **Related Links** 

Request samples 

**Contents** How to order products •Features •Product status/pricing/packaging **Datasheet** Product Change Notices •Order Samples Download this (PCNs) •Qualification Support datasheet Support **Features** Sales support Quality and reliability **Audio Frequency Power Amplifier** e-mail this datasheet-mail this datasheetmail this datasheet this datasheet **High Freqency Power Amplifier** Design center 

## **Features** 

**Audio Frequency Power Amplifier** e-mail this datasheet-mail this datasheetmail this datasheet this datasheet **High Freqency Power Amplifier** 

Complement to KSC2682 

**This page** back to top Print version 

**Product status/pricing/packaging** ~~|~~ **Product Product status** ~~|~~ **Pb-free Status** ~~|~~ **Pricing*** ~~|~~ **Package type Leads Packing method Package Marking Convention**** Line 1: **$Y** (Fairchild logo) KSA1142OSTU Full Production $0.151 TO-126 3 RAIL & **3** (3-Digit Date Code) Line 3: A1142-O ~~|~~ Line 1: **$Y** (Fairchild logo) KSA1142YSTU Full Production $0.151 TO-126 3 RAIL & **3** (3-Digit Date Code) Line 3: A1142-Y | et | ~~|~~ * Fairchild 1,000 piece Budgetary Pricing Fee | ot} ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples 

Indicates product with Pb-free second-level interconnect. For more information click here. 

Package marking information for product KSA1142 is available. Click here for more information . 

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Click on a product for detailed qualification data 

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