# Bipolar (BJT) Single Transistor, PNP, 160 V, 1 A, 900 mW, TO-226AA, Through Hole

![Product image](https://novapart.co/image/farnell:2453931/)

**URL**: https://novapart.co/products/KSA1013YBU/bipolar-bjt-single-transistor-pnp-160-v-1-a-900-mw
**SKU**: KSA1013YBU
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.1510
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-160V; Transition Frequency ft:50MHz; Power Dissipation Pd:900mW; DC Collector Current:-1A; DC Current Gain hFE:160hFE; Tr

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 900mW |
| Transistor Mounting | Through Hole |
| Transistor Polarity | PNP |
| Transition Frequency | 50MHz |
| Transistor Case Style | TO-226AA |
| Dc Current Gain Hfe Min | 160hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 1A |
| Collector Emitter Voltage Max | 160V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2453931/)

## **Is Now Part of** 

## **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** 

Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. 

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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October 2014<br>**----- End of picture text -----**<br>


## **KSA1013 PNP Epitaxial Silicon Transistor** 

## **Features** 

- Color TV Audio Output 

- Color TV Vertical Deflection Output 

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**----- Start of picture text -----**<br>
1 TO-92L<br>1. Emitter  2. Collector 3. Base<br>**----- End of picture text -----**<br>


## **Ordering Information** 

|**Part Number**|**Top Mark**|**Package**|**Packing Method**|
|---|---|---|---|
|KSA1013YBU|A1013|TO-92 3L|Bulk|
|KSA1013OBU||||
|KSA1013YTA|||Ammo|
|KSA1013OTA||||



## **Absolute Maximum Ratings** 

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCBO|Collector-Base Voltage|-160|V|
|VCEO|Collector-Emitter Voltage|-160|V|
|VEBO|Emitter-Base Voltage|-6|V|
|IC|Collector Current|-1|A|
|IB|Base Current|-0.5|A|
|TJ|Junction Temperature|150|°C|
|TSTG|Storage Temperature|-55 to +150|°C|



© 2002 Fairchild Semiconductor Corporation KSA1013 Rev. 1.1.1 

www.fairchildsemi.com 

## **Thermal Characteristics**[(1)] 

Values are at TA = 25°C unless otherwise noted. 

|Values are at TA = 25°C unless otherwise noted.A = 25°C unless otherwise noted.= 25°C unless otherwise noted.|Values are at TA = 25°C unless otherwise noted.A = 25°C unless otherwise noted.= 25°C unless otherwise noted.|Values are at TA = 25°C unless otherwise noted.A = 25°C unless otherwise noted.= 25°C unless otherwise noted.|Values are at TA = 25°C unless otherwise noted.A = 25°C unless otherwise noted.= 25°C unless otherwise noted.|Values are at TA = 25°C unless otherwise noted.A = 25°C unless otherwise noted.= 25°C unless otherwise noted.|Values are at TA = 25°C unless otherwise noted.A = 25°C unless otherwise noted.= 25°C unless otherwise noted.|Values are at TA = 25°C unless otherwise noted.A = 25°C unless otherwise noted.= 25°C unless otherwise noted.|Values are at TA = 25°C unless otherwise noted.A = 25°C unless otherwise noted.= 25°C unless otherwise noted.|
|---|---|---|---|---|---|---|---|
|**Note:**<br>1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.<br>**Electrical Characteristics**<br>Values are at TA= 25°C unless otherwise noted.<br>**Symbol**<br>**Parameter**<br>**Value**<br>**Unit**<br>PD<br>Power Dissipation<br>900<br>mW<br>Derate Above TA= 25°C<br>7.2<br>mW/°C<br>RθJA<br>Thermal Resistance, Junction-to-Ambient<br>139<br>°C/W<br>**Symbol**<br>**Parameter**<br>**Conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Unit**<br>ICBO<br>Collector Cut-Off Current<br>VCB= -150 V, IE= 0<br>-1<br>μA<br>IEBO<br>Emitter Cut-Off Current<br>VEB= -6 V, IC= 0<br>-1<br>μA<br>BVCEO<br>Collector-Emitter Breakdown Voltage IC= -10 mA, IB= 0<br>-160<br>V<br>~~re~~||||||||
|hFE<br>DC Current Gain||VCE= -5 V, IC= -200 mA|60||320|||
|VCE(sat)<br>Collector-Emitter Saturation Voltage||IC= -500 mA, IB= -50 mA|||-1.5||V|
|VBE(on)<br>Base-Emitter On Voltage||VCE=- 5 V, IC= -5 mA|-0.45||-0.75||V|
|fT<br>Current Gain Bandwidth Product||VCE= -5 V, IC= -200 mA|15|50|||MHz|
|Cob<br>Output Capacitance<br>~~aa~~||VCB= -10 V, IE= 0,<br>f = 1 MHz<br>~~ee~~|~~ee~~|35<br>~~ee~~|||pF|



## **hFE Classification** 

|**hFE ClassificationFE Classification Classification**||||
|---|---|---|---|
|**Classification**|**R**|**O**|**Y**|
|hFE|60 ~ 120|100 ~ 200|160 ~ 320|



© 2002 Fairchild Semiconductor Corporation KSA1013 Rev. 1.1.1 

www.fairchildsemi.com 

2 

## **Typical Performance Characteristics** 

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**----- Start of picture text -----**<br>
-1.0 1000<br>-0.9 EMITTER COMMON     Ta=25 o C I B  = -15mA IB = -12mA EMITTER COMMON         Ta=25oC<br>-0.8-0.7 Li I B  = -10mA<br>IB = -8mA 100<br>-0.6 | . VCE = -10V<br>-0.5 LI I B  = -6mA V CE  = -5V<br>-0.4 I B  = -4.5mA<br>-0.3 I B  = -3mA 10 VCE = -2V<br>-0.2 IB = -2mA<br>-0.1 |(Zo Zante I B  = -1mA<br>-0.0 pe==rtEtTittT=saamtt i | | 1 He=a<br>-0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -10 -100 -1000<br>VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT<br>Figure 1. Static Characteristic Figure 2. DC Current Gain<br>1000 -10<br>EMITTER COMMON EMITTER COMMON<br>-----VCE=-10V Ta=25oC<br>- - -V CE = -5V<br>-1<br>100 =—4 i<br>——~ -0.1 — IC/IB=10<br>I C /I B =5<br>10 ao -0.01 es<br>-10 -100 -1000 -1 -10 -100 -1000<br>IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT<br>Figure 3. DC Current Gain Figure 4. Collector-Emitter Saturation Voltage<br>-1.0 100<br>EMITTER COMMON<br>V CE =-5V<br>-0.8<br>PEE PEE A<br>-0.6 AEE EEE<br>10<br>-0.4 HEE E-HE<br>-0.2<br>PEELE ERE<br>-0.0 HEE 1<br>-0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -10 -100<br>VBE(sat)[V], BASE-EMITTER VOLTAGE VCB[V], COLLECTOR-BASE VOLTAGE<br>, DC CURRENT GAIN<br>FE<br>h<br>[A], COLLECTOR CURRENTIC<br>, DC CURRENT GAIN<br>FE<br>h<br>(sat)[V], SATURATION VOLTAGE<br>CE<br> V<br>[pF], CAPACITANCE<br>ob<br>C<br>[A], COLLECTOR CURRENTIC<br>**----- End of picture text -----**<br>


**Figure 5. Base-Emitter On Voltage** 

**Figure 6. Collector Output Capacitance** 

© 2002 Fairchild Semiconductor Corporation KSA1013 Rev. 1.1.1 

www.fairchildsemi.com 

3 

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**----- Start of picture text -----**<br>
Typical Performance Characteristics  (Continued)<br>1000 -10<br>EMITTER COMMON<br>Ta=25oC I C  MAX. (PULSE)<br>-1<br>100<br>VCE=-5V<br>V CE =-2V -0.1<br>10 = Soe eg eri<br>-0.01<br>1 ee -1E-3 peeSA<br>-1 -10 -100 -1 -10 -100 oe -1000<br>IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE<br>Figure7. Current Gain Bandwidth Product Figure 8. Safe Operating Area<br>IC MAX.=1.0A<br>DC(Ta=25C)o<br>1ms<br>10ms<br>100ms<br>V<br>[A], COLLECTOR CURRENTIC CEO MAX<br>[MHz], CURRENT GAIN-BANDWITH PRODUCTfT<br>**----- End of picture text -----**<br>


© 2002 Fairchild Semiconductor Corporation KSA1013 Rev. 1.1.1 

www.fairchildsemi.com 

4 

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ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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