# IGBT, 178 A, 2.8 V, 1.5 kW, 1.7 kV, PLUS247, 3 Pins

![Product image](https://novapart.co/image/farnell:3930299/)

**URL**: https://novapart.co/products/IXYX50N170C/igbt-178-a-28-v-15-kw-17-kv-plus247-3-pins
**SKU**: IXYX50N170C
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €15.7600
**Stock**: 200+
**Lead Time**: 373 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 1.5kW |
| Transistor Mounting | Through Hole |
| Transistor Case Style | PLUS247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 178A |
| Collector Emitter Voltage Max | 1.7kV |
| Collector Emitter Saturation Voltage | 2.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3930299/)

## Advance Technical Information 

## **High Voltage XPT[TM ] IGBT** 

## **IXYX50N170C** 

**V =   1700V CES I =   50A C110 V  3.7V CE(sat) t =   95ns fi(typ)** 

## **PLUS247 (IXYX)** 

|**Symbol**|**Test Conditions**|**Maximum Ratings**||
|---|---|---|---|
|**VCES**|TJ = 25°C to 175°C|1700|V|
|**VCGR**|TJ = 25°C to 175°C, RGE= 1M|1700|V|
|**VGES**|Continuous<br>±20|±20|V|
|**VGEM**|Transient<br>±30|±30|V|
|**IC25**|TC= 25°C                                                                        178|= 25°C                                                                        178<br>A|A|
|**IC110**|TC = 110°C<br>50|50|A|
|**ICM**|TC = 25°C, 1ms<br>460|460|A|
|**SSOA**|VGE= 15V, TVJ= 150°C, RG= 1|ICM= 200|A|
|**(RBSOA)**Clamped Inductive Load                                        V|Clamped Inductive Load                                        V|Clamped Inductive Load                                        VCE  1360                   V|1360                   V|
|**PC**|TC = 25°C|1500|W|
|**TJ**||-55 ... +175|°C|
|**TJM**||175|°C|
|**Tstg**||-55 ... +175|°C|
|**TL**|Maximum Lead Temperature for Soldering|300|°C|
|**TSOLD**|1.6 mm (0.062in.) from Case for 10s|260<br>°C|°C|
|**FC**|Mounting Force                                            20..120 /4.5..27               N/lb|Mounting Force                                            20..120 /4.5..27               N/lb|Mounting Force                                            20..120 /4.5..27               N/lb|
|**Weight**|6|6 g|g|



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**----- Start of picture text -----**<br>
G<br>G<br>C<br>Tab<br>E<br>G  = Gate E       =  Emitter<br>C  = Collector Tab   =  Collector<br>**----- End of picture text -----**<br>


## **Features** 

- High Voltage Package 

- High Blocking Voltage 

- High Peak Current Capability 

- Low Saturation Voltage 

## **Advantages** 

- Low Gate Drive Requirement 

- High Power Density 

## **Applications** 

|**Symbol**<br>(T= 25C, Unless Otherwise Specified)**Min.        Typ.      Max.**|**Min.        Typ.      Max.**|**Min.        Typ.      Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.        Typ.      Max.**|**Min.        Typ.      Max.**|**Min.        Typ.      Max.**|
|**BVCES**<br>IC= 250A, VGE= 0V<br>1700                                      V|1700                                      V<br>~~-_~~|1700                                      V|
|**VGE(th)**<br>IC<br>= 250A, VCE= VGE<br>3.0|5.0<br>~~-_~~|5.0<br>V|
|**ICES**<br>VCE = VCES, VGE= 0V<br>TJ= 150C|25<br>3.5    mA<br>~~_~~|25<br>A<br>3.5    mA|
|**IGES**<br>VCE = 0V, VGE=20V|<br>~~|~~|100    nA|
|**VCE(sat)**<br>IC<br>= 50A, VGE= 15V, Note 1<br>2.8              3.7       V<br>TJ= 150C<br>3.9                       V|2.8              3.7       V<br>3.9                       V<br>~~|~~<br>~~=~~|2.8              3.7       V<br>3.9                       V|



- Switch-Mode and Resonant-Mode Power Supplies 

- Uninterruptible Power Supplies (UPS) 

- Laser Generators 

- Capacitor Discharge Circuits 

- AC Switches 

© 2017 IXYS CORPORATION, All Rights Reserved 

DS100800(02/17) 

## **IXYX50N170C** 

|(T= 25°C Unless Otherwise Specified)<br>**Min.       Typ.        Max.**|(T= 25°C Unless Otherwise Specified)<br>**Min.       Typ.        Max.**|**Typ.        Max.**|**Typ.        Max.**|
|---|---|---|---|
|(TJ= 25°C Unless Otherwise Specified)<br>**Min.        Typ.        Max.**||**Typ.        Max.**|**Typ.        Max.**|
|**gfs**IC= 50A, VCE= 10V, Note 1                        30                50||= 10V, Note 1                        30                50|S|
|**RGi**<br>Gate Input Resistance<br>2.0||2.0||
|**Cies**<br>5500<br>**Coes**VCE= 25V, VGE= 0V, f = 1MHz<br>276<br>**Cres**<br>105||5500<br>276<br>105<br>~~-_~~|pF<br>pF<br>pF|
|**Qg(on)**<br>**Qge**I<br>**Qgc**|260<br>IC= 50A, VGE= 15V, VCE= 0.5 • VCES<br>28<br>110|260<br>28<br>110<br>~~-_~~|nC<br>nC<br>nC|
|**gc**||~~-_~~||
|**td(on)**<br>20<br>**tri**<br>44<br>**Eon**<br>8.7<br>**td(off)**<br>180                    ns<br>**tfi**<br>95<br>**Eoff**<br>5.6                 mJ<br>**Inductive load, TJ = 25°C**<br>IC= 50A, VGE= 15V<br>VCE= 0.5 • VCES, RG= 1<br>Note 2||20<br>44<br>8.7<br>180                    ns<br>95<br>5.6                 mJ<br>~~-_~~|ns<br>ns<br>mJ<br>180                    ns<br>ns<br>5.6                 mJ|
|**td(on)**<br>22<br>**tri**<br>40<br>**Eon**<br>11.9<br>**td(off)**<br>236<br>**tfi**<br>160<br>**Eoff**<br>8.2<br>**Inductive load, TJ = 150°C**<br>IC= 50A, VGE= 15V<br>VCE= 0.5 • VCES, RG= 1<br>Note 2||22<br>40<br>11.9<br>236<br>160<br>8.2|ns<br>ns<br>mJ<br>ns<br>ns<br>mJ|
|**RthJC**<br>**RthCS**<br>0.15||0.10 °C/W<br>0.15|0.10 °C/W<br>°C/W|



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**----- Start of picture text -----**<br>
 PLUS247 [TM]  Outline<br>4R ie}<br>Ll<br>Terminals: i Ee" 1 - Gate Pras<br>2,4 - Collector<br>3 - Emitter<br>**----- End of picture text -----**<br>


Notes: 

1.  Pulse test, t  300μs, duty cycle, d  2%. 

2.  Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. 

## **ADVANCE TECHNICAL INFORMATION** 

The product presented herein is under development.  The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result.  IXYS reserves the right to change limits, test conditions, and dimensions without notice. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXYX50N170C** 

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Fig. 2. Extended Output Characteristics @ TJ = 25oCJ = 25oC = 25oCoCC<br>**----- End of picture text -----**<br>


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Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oCJ = 25oC = 25oCoCC<br>100 600<br>V GE = 15V VGE = 15V<br>90           12V<br>          10V 500 14V<br>80             9V<br>70 fsSo S/OOf 8V ZA SERRE? === 13V<br>400<br>12V<br>60<br>50 72) 300 11V<br>40 a 7V [————<br>10V<br>200<br>30 Samss<br>ey cans 7 9V<br>20<br>100<br>10 POAT ce 8V<br>6V 7V<br>0 Toe 0 ORRECLAR E E 6V<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 2 4 6 8 10 12 14 16 18 20 22<br>VCE - Volts VCE - Volts<br>Fig. 3. Output Characteristics @ TJ = 150oC Fig. 4. Dependence of VCE(sat) on<br>Junction Temperature<br>100 2.2<br>90 V            12V GE = 15V | / 2.0 VGE = 15V<br>           10V<br>80<br>             9V  8V 1.8 I  C  = 100A<br>70 I A 1.6 SE Ua<br>60<br>eee / Ze 1.4 rT er rT<br>50 7V I C = 50A<br>1.2<br>40 Yrs ee eer<br>a, Z0n 1.0 pt<br>30<br>a) Ae 6V |<br>20 0.8 I C = 25A<br>10 fa 0.6<br>5V<br>0 a 0.4 Ee<br>0 1 2 3 4 5 6 7 -50 -25 0 25 50 75 100 125 150 175<br>VCE - Volts TJ - Degrees Centigrade<br>Fig. 5. Collector-to-Emitter Voltage vs.<br>Fig. 6. Input Admittance<br>7  Gate-to-Emitter Voltage 250<br>TJ  = 150 [o] C  225<br>| oes/<br>6 200<br>175<br>5 150<br>4 Ss aYA<br>I C = 100A 125<br>4 CIPNGECTPA ) 100 GEEEREE A<br>ee 75 EEA<br>50A TJ  = 150 [o] C<br>3 50<br>          25 [o] C<br>WINE TT 25A TT 25 aoner> - 40 [o] C  aenen<br>2 SET 0 Eee<br>5 6 7 8 9 10 11 12 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0<br>VGE - Volts VGE - Volts<br> - Amperes Amperes<br>IC IC -<br> - Normalized<br> - Amperes<br>IC<br>CE(sat)<br>V<br> - Volts Amperes<br>VCE IC -<br>**----- End of picture text -----**<br>


© 2017 IXYS CORPORATION, All Rights Reserved 

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IXYX50N170C<br>MilXYs<br>Fig. 7. Transconductance Fig. 8. Gate Charge<br>90 16<br>T J = - 40 [o] C<br>80 a 14 ee  VCE = 850V<br> I C = 50A<br>70 12  I  G  = 10mA<br>25 [o] C<br>60 cae<br>10<br>50<br>See 150 [o] SS C 8 Ee<br>40<br>fee 6 ete<br>30 fA | | | | ff q+<br>4<br>20<br>10 FREER 2 PEPER<br>0 0<br>Po; | / | | | | | | |<br>0 40 80 120 160 200 240 280 0 40 80 120 160 200 240 280<br>IC - Amperes QG - NanoCoulombs<br>Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area<br>10,000 4 240<br>C ies 200<br>CULE ET EE<br>1,000 160<br>LT) eee<br>C oes 120<br>100 << 80 ef | tt tT AT<br>Cres  TJ = 150 [o] C<br>40  RG = 1Ω<br>f = 1 MHz<br> dv / dt < 10V / ns<br>10 eelea 0 beee| TT<br>0 5 10 15 20 25 30 35 40 200 400 600 800 1000 1200 1400 1600<br>= VCE - Volts ELLE) (beer VCE - Volts<br>Fig. 11. Maximum Transient Thermal Impedance<br>0.11 At<br>0.01<br>Siant aH<br>0.001 ee<br>ee<br>0.0001 SO<br>0.00001 0.0001 0.001 0.01 0.1 1<br>Pulse Width - Second<br>Siemens  - Volts<br> -  GE<br> f s V<br>g<br> - Amperes<br>IC<br>Capacitance - PicoFarads<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXYX50N170C** 

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**----- Start of picture text -----**<br>
Fig. 12. Inductive Switching Energy Loss vs. Fig. 13. Inductive Switching Energy Loss vs.<br> Gate Resistance  Collector Current<br>35 a es ee 40 24 a 30<br> Eoff       Eon   Eoff       Eon<br>30  TJ = 150 [o] C ,  VGE = 15V 1 | ft ft 35 20 in  R G  = 1ΩV GE  = 15V =|) |e 25<br> VCE = 850V          VCE = 850V<br>25 30<br>16 20<br>20 oeeee) I C = 100A 25 eee<br>a 12 | | |Lear 15<br>15 20<br>Pt | | | ft tf 8 TJ = 150 [o] C BS aea 10<br>10 15<br>Pte ety td la<br>5 - a= I C = 50A 10 4 BEE 5<br>T J  = 25 [o] C<br>0 |)Pt] tt | Ady 5 0 7es|EELEI 0<br>1 2 3 4 5 6 7 8 9 10 20 30 40 50 60 70 80 90 100<br>RG - Ohms IC - Amperes<br>Fig. 14. Inductive Switching Energy Loss vs. Fig. 15. Inductive Turn-off Switching Times vs.<br> Junction Temperature  Gate Resistance<br>24 36 220 600<br>21 SST  E off     E on  32  t f i t d(off)<br> RG = 1ΩVGE = 15V 200  T J  = 150 [o] C,  V GE  = 15V 500<br>18 eed  VCE = 850V       NED I C = 100A CRANE7 28 FST7  VCE = 850V<br>15 24<br>180 400<br>12 20<br>I C = 50A<br>eee 160 ease 300<br>9 16<br>I C = 100A<br>a -a<br>6 12<br>140 200<br>3 a I C = 50A 8 Pea<br>0 asa 4 OPT 120 TEE 100<br>25 50 75 100 125 150 1 2 3 4 5 6 7 8 9 10<br>TJ - Degrees Centigrade RG - Ohms<br>Fig. 16. Inductive Turn-off Switching Times vs. Fig. 17. Inductive Turn-off Switching Times vs.<br> Collector Current  Junction Temperature<br>350 400 200 280<br>300 CODD RES)  t RGf i = 1Ω ,  VGEt = 15Vd(off) 350 180 [P-EX£{  t RGf i = 1Ω ,  VGEt = 15Vd(off)  TT 260<br>250 i a  VCE = 850V            300 160  VCE = 850V       240<br>Qn<br>I  C  = 100A<br>200 250 140 220<br>TJ = 150 [o] C<br>150 RECTSESS 200 6 120 | e I C = 50A aee 200<br>100 COPE 150 100 Cee 180<br> EEEE —Le Toes<br>TJ = 25 [o] C<br>50 100 80 160<br>STEEP ST Moe<br>I  C  = 100A<br>0 TEEEEEEE 50 60 Fe 140<br>20 30 40 50 60 70 80 90 100 25 50 75 100 125 150<br>IC - Amperes TJ - Degrees Centigrade<br>E E<br>on on<br> - MilliJoules  - MilliJoules<br>off off<br>E  - MilliJoules E  - MilliJoules<br>t<br>E<br>on  d(off)<br> - MilliJoulesoff  - Nanoseconds<br>E  - MilliJoules t f i<br> - Nanoseconds<br>t<br> d(off) t<br> - Nanoseconds  - Nanoseconds  d(off)<br>t f i tf i<br> - Nanoseconds<br> - Nanoseconds<br>**----- End of picture text -----**<br>


© 2017 IXYS CORPORATION, All Rights Reserved 

## **IXYX50N170C** 

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**----- Start of picture text -----**<br>
Fig. 19. Inductive Turn-on Switching Times vs. Fig. 20. Inductive Turn-on Switching Times vs.<br> Gate Resistance  Collector Current<br>240 60 160 30<br> t r i oe td(on)  140 FESS  t r i t d(on)   ETT 28<br>200  TJ = 150 [o] C,  VGE = 15V 50  RG = 1Ω ,  VGE = 15V<br> V CE  = 850V   120  VCE = 850V  TJ = 150 [o] C 26<br>160 40<br>tee) 100 LE 24<br>I C = 100A<br>120 coerBRaee 30 80 TET| | | 22<br> 26 a<br>60 20<br>80 I C = 50A 20 TJ = 25 [o] C<br>40 18<br>Serer) Gee<br>40 10<br>pi 20 SS 16<br>0 0 0 14<br>FREER FEEEEEEEEE<br>1 2 3 4 5 6 7 8 9 10 20 30 40 50 60 70 80 90 100<br>RG - Ohms IC - Amperes<br>Fig. 21. Inductive Turn-on Switching Times vs.<br> Junction Temperature<br>200 34<br>180 ptt  t r i t d(on)   fd 32<br>160 | |  RG = 1Ω ,  VGE = 15V LETT LT 30<br> VCE = 850V<br>140 fF 28<br>120 HERES GRREE REREeRe 26<br>I C = 100A<br>100 es eneee 24<br>80 Pe-g-77 TU 22<br>60 eeeee 20<br>I C = 50A<br>4020 TTPLETEEE 1816<br>0 PLETEET EE] 14<br>25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> d(on)t  d(on)t<br> - Nanoseconds  - Nanoseconds<br>t r i tr i<br> - Nanoseconds  - Nanoseconds<br> - Nanoseconds  d(on)t<br>r i<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS REF: IXY_50N170C (9T-AT653) 2-10-17 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



## Links

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- [Supplier page](https://es.farnell.com/littelfuse/ixyx50n170c/transistor-igbt-1-7kv-178a-plus247/dp/3930299)
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