# IGBT, 310 A, 2.15 V, 1.63 kW, 900 V, PLUS247, 3 Pins

![Product image](https://novapart.co/image/farnell:3930557/)

**URL**: https://novapart.co/products/IXYX140N90C3/igbt-310-a-215-v-163-kw-900-plus247-3-pins
**SKU**: IXYX140N90C3
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €17.4000
**Stock**: 10+
**Lead Time**: 218 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 1.63kW |
| Transistor Mounting | Through Hole |
| Transistor Case Style | PLUS247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 310A |
| Collector Emitter Voltage Max | 900V |
| Collector Emitter Saturation Voltage | 2.15V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3930557/)

## **XPT[TM ] 900V IGBTs GenX3[TM]** 

High-Speed IGBTs for 20-50 kHz Switching 

## **IXYK140N90C3 IXYX140N90C3** 

**V =   900V CES I =   140A C110 V ≤ 2.7V CE(sat) t =   105ns fi(typ)** 

## **TO-264 (IXYK)** 

|**Symbol**|**Test Conditions**|**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**||
|---|---|---|---|---|---|
|~~a~~||||||
|**VCES**<br>**VCGR**|TJ = 25°C to 175°C<br>TJ = 25°C to 175°C, RGE= 1MΩ|900<br>900|900<br>900||V<br>V|
|**VGES**|Continuous<br>±20|±20|±20||V|
|**VGEM**|Transient<br>±30|±30|±30||V|
|**IC25**|TC= 25°C (Chip Capability)                                             310|= 25°C (Chip Capability)                                             310|= 25°C (Chip Capability)                                             310|A|A|
|**ILRMS**|Terminal Current Limit                                                       160|Terminal Current Limit                                                       160|Terminal Current Limit                                                       160|A|A|
|**IC110**<br>**ICM**|TC= 110°C                                                                              140                     A<br>TC = 25°C, 1ms<br>840|= 110°C                                                                              140                     A<br>840|= 110°C                                                                              140                     A<br>840|= 110°C                                                                              140                     A<br>A|= 110°C                                                                              140                     A<br>A|
|**IA**|TC = 25°C                                                                         70                   A|= 25°C                                                                         70                   A|= 25°C                                                                         70                   A|= 25°C                                                                         70                   A|= 25°C                                                                         70                   A|
|**EAS**|TC = 25°C                                                                             1                    J|= 25°C                                                                             1                    J|= 25°C                                                                             1                    J|= 25°C                                                                             1                    J|= 25°C                                                                             1                    J|
|**SSOA**|VGE= 15V, TVJ= 150°C, RG= 1Ω|ICM= 280|||A|
|**(RBSOA)**Clamped Inductive Load                                      @V|Clamped Inductive Load                                      @V|Clamped Inductive Load                                      @VCE ≤ VCES||||
|**PC**|TC = 25°C||1630||W|
|**TJ**||-55 ... +175|||°C|
|**TJM**|||175||°C|
|**Tstg**<br>**TL**|Maximum Lead Temperature for Soldering|-55 ... +175<br>300|||°C<br>°C|
|**TSOLD**|1.6 mm (0.062in.) from Case for 10s||260|°C|°C|
|**Md**<br>**FC**|Mounting Torque  (TO-264)<br>1.13/10<br>Mounting Force    (PLUS247)                      20..120 /4.5..27              N/lb.|1.13/10<br>Mounting Force    (PLUS247)                      20..120 /4.5..27              N/lb.|1.13/10<br>Mounting Force    (PLUS247)                      20..120 /4.5..27              N/lb.|Nm/lb.in.<br>Mounting Force    (PLUS247)                      20..120 /4.5..27              N/lb.||
|**Weight**|TO-264<br>10|10|10||g|
||PLUS247<br>6|6|6|6|6g|
|**Symbol**|**Test Conditions                                           Characteristic Values**|**Test Conditions                                           Characteristic Values**||||
|(TJ= 25°C, Unless Otherwise Specified)|C, Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**||
|**BVCES**<br>I|IC= 250μA, VGE= 0V<br>950                                      V|950                                      V|950                                      V|950                                      V|950                                      V|
|**VGE(th)**<br>**ICES**|IC<br>= 250μA, VCE= VGE<br>3.5<br>VCE = VCES, VGE= 0V|3.5|5.5<br>25|5.5<br>25|V<br>μA|
||TJ= 150°C||1.25    mA|1.25    mA|1.25    mA|
|**IGES**|VCE = 0V, VGE=±20V||±|±100    nA|100    nA|
|**VCE(sat)**|IC<br>=IC110, VGE= 15V, Note 1|2.15          2.70      V|2.15          2.70      V|2.15          2.70      V|2.15          2.70      V|
||TJ= 150°C|2.85                      V|2.85                      V|2.85                      V|2.85                      V|



|G||||||||
|---|---|---|---|---|---|---|---|
|E<br>C||||||||
||||||Tab|||
|**PLUS247 (IXYX)**||||||||
|||||||||
|G<br>G||C|E||Tab|||
|G  = Gate||||E       =  Emitter|E       =  Emitter|E       =  Emitter||
|C  = Collector||||Tab   =  Collector||Tab   =  Collector||



## **Features** 

Optimized for Low Switching Losses Square RBSOA International Standard Packages Positive Thermal Coefficient of Vce(sat) Avalanche Rated High Current Handling Capability 

## **Advantages** 

High Power Density Low Gate Drive Requirement 

## **Applications** 

High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts 

© 2013 IXYS CORPORATION, All Rights Reserved 

DS100450B(02/13) 

## **IXYK140N90C3 IXYX140N90C3** 

|(T= 25°C Unless Otherwise Specified)<br>**Min.       Typ.        Max.**|**Typ.        Max.**|**Typ.        Max.**|
|---|---|---|
|(TJ= 25°C Unless Otherwise Specified)<br>**Min.        Typ.        Max.**<br>~~||~~|**Typ.        Max.**<br>~~||~~|**Typ.        Max.**|
|**gfs**IC= 60A, VCE= 10V, Note 1                        30                52<br>~~||~~|= 10V, Note 1                        30                52<br>~~||~~|S|
|**Cies**<br>9830<br>**Coes**VCE= 25V, VGE= 0V, f = 1MHz<br>570<br>**Cres**<br>185<br>~~||~~|9830<br>570<br>185<br>~~||~~|pF<br>pF<br>pF|
|**Qg(on)**<br>330<br>**Qge**IC=IC110, VGE= 15V, VCE= 0.5 • VCES<br>82<br>**Qgc**<br>128|330<br>82<br>128<br>~~-~~|nC<br>nC<br>nC|
|**td(on)**<br>40<br>**tri**<br>86<br>**Eon**<br>4.3<br>**td(off)**<br>145           ns<br>**tfi**<br>105<br>**Eoff**<br>4.0         6.5<br>**Inductive load, TJ = 25°C**<br>IC= 100A, VGE= 15V<br>VCE= 0.5 • VCES, RG= 1Ω<br>Note 2|40<br>86<br>4.3<br>145           ns<br>105<br>4.0         6.5<br>~~-~~|ns<br>ns<br>mJ<br>145           ns<br>ns<br>4.0         6.5<br>mJ|
|**td(on)**<br>37<br>**tri**<br>85<br>**Eon**<br>6.5<br>**td(off)**<br>175<br>**tfi**<br>125<br>**Eoff**<br>5.0<br>**Inductive load, TJ = 150°C**<br>IC= 100A, VGE= 15V<br>VCE= 0.5 • VCES, RG= 1Ω<br>Note 2|37<br>85<br>6.5<br>175<br>125<br>5.0|ns<br>ns<br>mJ<br>ns<br>ns<br>mJ|
|**RthJC**<br>**RthCS**<br>0.15|0.092 °C/W<br>0.15|0.092 °C/W<br>°C/W|



## **TO-264 Outline** 

**==> picture [52 x 15] intentionally omitted <==**

**----- Start of picture text -----**<br>
Terminals:   1  = Gate<br>                   2,4  = Collector<br>                      3  =  Emitter<br>**----- End of picture text -----**<br>


## **PLUS247[TM] Outline** 

Notes: 

1.  Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 

2.  Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. 

|Dim.<br>Millimeter<br>Min.|Millimeter<br>Min.<br>Max.|Inches<br>Min.<br>Max.|
|---|---|---|
|A<br>4.83<br>A1<br>2.29<br>A2<br>1.91|4.83<br>5.21<br>2.29<br>2.54<br>1.91<br>2.16|.190<br>.205<br>.090<br>.100<br>.075<br>.085|
|b<br>1.14<br>b1<br>1.91<br>b2<br>2.92|1.14<br>1.40<br>1.91<br>2.13<br>2.92<br>3.12|.045<br>.055<br>.075<br>.084<br>.115<br>.123|
|C<br>0.61<br>D<br>20.80<br>E<br>15.75|0.61<br>0.80<br>20.80<br>21.34<br>15.75<br>16.13|.024<br>.031<br>.819<br>.840<br>.620<br>.635|
|e<br>5.45 BSC<br>L<br>19.81<br>L1<br>3.81<br>Q<br>5.59|5.45 BSC<br>19.81<br>20.32<br>3.81<br>4.32<br>5.59<br>6.20|.215 BSC<br>.780<br>.800<br>.150<br>.170<br>.220 0.244|
|R<br>4.32|4.32<br>4.83|.170<br>.190|



IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXYK140N90C3 IXYX140N90C3** 

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**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>280 350<br>V GE = 15V<br>240            12V  300 VGE = 15V 11V<br>           12V<br>11V<br>200 250<br>10V<br>160 200<br>10V<br>120 9V 150<br>80 100 9V<br>8V<br>40 50<br>8V<br>6V<br>0 0 7V<br>0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 0 2 4 6 8 10 12 14 16 18<br>VCE - Volts VCE - Volts<br>Fig. 4. Dependence of VCE(sat) on<br>Fig. 3. Output Characteristics @ TJ = 150ºC Junction Temperature<br>2.2<br>280<br>VGE = 15V  2.0 VGE = 15V<br>240           12V<br>          11V  1.8 I C = 280A<br>200<br>1.6<br>10V<br>160 1.4<br>I C = 140A<br>1.2<br>120 9V<br>1.0<br>80<br>8V 0.8<br>I  C = 70A<br>40<br>7V 0.6<br>0 a 6V 0.4<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -50 -25 0 25 50 75 100 125 150 175<br>VCE - Volts TJ - Degrees Centigrade<br>Fig. 5. Collector-to-Emitter Voltage vs.<br> Gate-to-Emitter Voltage Fig. 6. Input Admittance<br>7 200<br>T J   = 25ºC  180<br>6<br>160<br>140<br>5<br>120<br>4 I C = 280A  100 TJ  = 150ºC<br>          25ºC<br>140A  80 - 40ºC<br>3<br>70A  60<br>40<br>2<br>20<br>1 0<br>8 9 10 11 12 13 14 15 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10<br>VGE - Volts VGE - Volts<br> - Amperes Amperes<br>IC  -<br>IC<br> - Normalized<br> - Amperes<br>IC<br>CE(sat)<br>V<br> - Volts<br>Amperes<br>CE<br>V IC -<br>**----- End of picture text -----**<br>


© 2013 IXYS CORPORATION, All Rights Reserved 

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**----- Start of picture text -----**<br>
IXYK140N90C3<br>IXYX140N90C3<br>Fig. 7. Transconductance Fig. 8. Gate Charge<br>120 16<br> VCE = 450V<br>14<br>100 TJ = - 40ºC, 25ºC, 150ºC  I C = 140A<br>12  I G = 10mA<br>80<br>10<br>60 8<br>6<br>40<br>4<br>20<br>2<br>0 0<br>0 20 40 60 80 100 120 140 160 180 200 0 50 100 150 200 250 300 350<br>IC - Amperes QG - NanoCoulombs<br>Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area<br>100,000 300<br>f = 1 MHz<br>250<br>10,000 200<br>Cies<br>150<br>1,000 Coes 100<br>TJ = 150ºC<br>[=] Cres 50 dv / dt  R G  = 1Ω < 10V / ns<br>100 a 0<br>0 5 10 15 20 25 30 35 40 100 200 300 400 500 600 700 800 900<br>VCE - Volts VCE - Volts<br>Fig. 11. Maximum Transient Thermal Impedance<br>0.1<br>0.01<br>0.001<br>sas<br>0.0001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br>Siemens  - Volts<br> -  GE<br> f s V<br>g<br> - Amperes<br>IC<br>Capacitance - PicoFarads<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXYK140N90C3 IXYX140N90C3** 

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**----- Start of picture text -----**<br>
Fig. 12. Inductive Switching Energy Loss vs.<br> Gate Resistance<br>8 9<br> Eoff       Eon  - - - -<br>7  TJ = 150ºC ,  VGE = 15V 8<br> V CE  = 450V<br>6 7<br>I C = 100A<br>5 6<br>4 5<br>3 4<br>2 3<br>I C = 50A<br>1 2<br>1 2 3 4 5 6 7 8 9 10<br>RG - Ohms<br>E<br>on<br> - MilliJoules<br>off<br>E  - MilliJoules<br>**----- End of picture text -----**<br>


**==> picture [256 x 412] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 14. Inductive Switching Energy Loss vs.<br> Junction Temperature<br>8 8<br>7  Eoff     Eon - - - - 7<br> R G = 1Ω ,  V GE = 15V<br>6  V CE  = 450V       6<br>5 I C = 100A 5<br>4 4<br>3 3<br>2 I  C  = 50A 2<br>1 1<br>0 0<br>25 50 75 100 125 150<br>TJ - Degrees Centigrade<br>Fig. 16. Inductive Turn-off Switching Times vs.<br> Collector Current<br>250 260<br>225  t f i t d(off) - - - - 240<br> RG = 1Ω ,  VGE = 15V<br>200  VCE = 450V            220<br>175 T J = 150ºC 200<br>150 180<br>125 160<br>100 TJ = 25ºC 140<br>75 120<br>50 100<br>50 55 60 65 70 75 80 85 90 95 100<br>IC - Amperes<br>E<br>on<br> - MilliJoules<br>off<br>E  - MilliJoules<br> - Nanoseconds  d(off)t<br>t f i<br> - Nanoseconds<br>**----- End of picture text -----**<br>


**Fig. 13. Inductive Switching Energy Loss vs. Collector Current** 

**==> picture [253 x 179] intentionally omitted <==**

**----- Start of picture text -----**<br>
6 10<br> Eoff                     Eon - - - -<br>5  RG = 1Ω , VGE = 15V 8<br> VCE = 450V<br>4 6<br>T J = 150ºC<br>3 4<br>2 T J = 25ºC 2<br>1 0<br>50 55 60 65 70 75 80 85 90 95 100<br>IC - Amperes<br>E<br>on<br> - MilliJoules<br>off<br>E  - MilliJoules<br>**----- End of picture text -----**<br>


**Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance** 

**==> picture [256 x 392] intentionally omitted <==**

**----- Start of picture text -----**<br>
260 340<br>240  t f i td(off) - - - -  320<br>220  TJ = 150ºC,  VGE = 15V 300<br> VCE = 450V<br>200 280<br>I C = 50A<br>180 260<br>160 240<br>140 220<br>I C = 100A<br>120 200<br>100 180<br>80 160<br>60 140<br>1 2 3 4 5 6 7 8 9 10<br>RG - Ohms<br>Fig. 17. Inductive Turn-off Switching Times vs.<br> Junction Temperature<br>200 260<br> t f i td(off) - - - -<br>180 240<br> RG = 1Ω ,  VGE = 15V<br> VCE = 450V<br>160 220<br>140 I  C = 50A 200<br>120 180<br>100 160<br>= I  C  = 100A<br>80 140<br>60 120<br>25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Nanoseconds  d(off)t<br>t f i<br> - Nanoseconds<br> - Nanoseconds  d(off)t<br>f i<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


© 2013 IXYS CORPORATION, All Rights Reserved 

## **IXYK140N90C3 IXYX140N90C3** 

**==> picture [255 x 413] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 18. Inductive Turn-on Switching Times vs.<br> Gate Resistance<br>160 80<br>140  t r i td(on) - - - - 72<br> T J = 150ºC,  V GE = 15V<br>120  VCE = 450V   64<br>100 56<br>[= I  C  = 100A<br>80 a ee 48<br>-°! a<br>60 ott -* =? oe err eorte I  C  = 50A 40<br>-- ee<br>40 32<br>20 24<br>0 SUSSEEEEEEEEEEEIEE 16<br>1 2 3 4 5 6 7 8 9 10<br>RG - Ohms<br>Fig. 20. Inductive Turn-on Switching Times vs.<br> Junction Temperature<br>140 52<br> t r i td(on) - - - -<br>120 48<br> RG = 1Ω ,  VGE = 15V<br> VCE = 450V<br>100 44<br>I C = 100A<br>80 40<br>60 36<br>40 I C = 50A 32<br>20 28<br>0 24<br>25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Nanoseconds  d(on)t<br>t r i<br> - Nanoseconds<br> - Nanoseconds  d(on)t<br>r i<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


**Fig. 19. Inductive Turn-on Switching Times vs. Collector Current** 

**==> picture [256 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
120 44<br> t r i t d(on) - - - -<br>100  R G  = 1Ω ,  V GE  = 15V 42<br> VCE = 450V<br>80 40<br>77<br>60 — << T J  = 25ºC, 150ºC \ 38<br>“anne.* ee esses<br>40 ete “7 oie 36<br>- |<br>20 . 34<br>0 aa - 32<br>50 55 60 65 70 75 80 85 90 95 100<br>IC - Amperes<br> - Nanoseconds  d(on)t<br>r i<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS REF: IXY_140N90C3(91)03-26-12-A 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



## Links

- [View this product on Novapart](https://novapart.co/products/IXYX140N90C3/igbt-310-a-215-v-163-kw-900-plus247-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/littelfuse/ixyx140n90c3/transistor-igbt-900v-310a-plus247/dp/3930557)
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