# IGBT, 340 A, 1.66 V, 1.36 kW, 1.2 kV, PLUS247, 3 Pins

![Product image](https://novapart.co/image/farnell:4167475/)

**URL**: https://novapart.co/products/IXYX110N120B4/igbt-340-a-166-v-136-kw-12-kv-plus247-3-pins
**SKU**: IXYX110N120B4
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €11.4100
**Stock**: 100+
**Lead Time**: 232 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Product Range | XPT Gen 4 Series |
| Power Dissipation | 1.36kW |
| Transistor Mounting | Through Hole |
| Transistor Case Style | PLUS247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 340A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Saturation Voltage | 1.66V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4167475/)

## **1200V XPT[TM] Gen 4 IGBT** 

## **IXYX110N120B4** 

Extreme Light Punch Through IGBT for 5-30 kHz Switching 

|**Symbol**|**Test Conditions**|**Maximum Ratings**||
|---|---|---|---|
|**VCES**|TJ = 25°C to 175°C|1200|V|
|**VCGR**<br>**VGES**|TJ = 25°C to 175°C, RGE= 1M<br>Continuous<br>±20|1200<br>±20|V<br>V|
|**VGEM**|Transient<br>±30|±30|V|
|**IC25**<br>**ILRMS**|TC= 25°C (Chip Capability)                                                 340<br>Terminal Current Limit                                                       160|= 25°C (Chip Capability)                                                 340<br>A<br>Terminal Current Limit                                                       160<br>A|A<br>A|
|**IC110**|TC= 110°C                                                                               110                     A|= 110°C                                                                               110                     A|= 110°C                                                                               110                     A|
|**ICM**|TC = 25°C, 1ms<br>800|800<br>A|A|
|**SSOA**|VGE= 15V, TVJ= 150°C, RG= 2|ICM= 220|A|
|**(RBSOA)**Clamped Inductive Load                                            0.8 • V|Clamped Inductive Load                                            0.8 • V|Clamped Inductive Load                                            0.8 • VCESV|V|
|**PC**<br>**TJ**|TC = 25°C|1360<br>-55 ... +175|W<br>°C|
|**TJM**||175|°C|
|**Tstg**||-55 ... +175|°C|
|**TL**|Maximum Lead Temperature for Soldering|300|°C|
||1.6 mm (0.062 in.) from Case for 10s|||
|**Md**<br>**Weight**|Mounting Force<br>20..120 / 4.5..27      Nm/lb.in|20..120 / 4.5..27      Nm/lb.in<br>6                     g||



**V =   1200V CES I =   110A C110 V**  **2.10V CE(sat) t =   130ns fi(typ) PLUS247 (IXYX)** 

**==> picture [149 x 59] intentionally omitted <==**

**----- Start of picture text -----**<br>
G<br>G<br>C<br>E C (Tab)<br>G  = Gate C      = Collector<br>E  = Emitter Tab  =  Collector<br>**----- End of picture text -----**<br>


## **Features** 

- Optimized for 5-30kHZ Switching 

- Positive Thermal Coefficient of Vce(sat)  International Standard Package 

## **Advantages** 

- High Power Density 

- Low Gate Drive Requirement 

## **Applications** 

- Power Inverters 

|**Symbol**<br>(T= 25C, Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|
|**BVCES**<br>IC= 250A, VGE= 0V<br>1200                                          V|1200                                          V<br>~~ee~~|1200                                          V|
|**VGE(th)**<br>IC= 3mA, VCE= VGE<br>4.5|6.5<br>~~ee~~<br>~~ee~~|6.5<br>V|
|**ICES**<br>VCE = VCES, VGE= 0V<br>TJ= 150C|25<br>1.5    mA|25<br>A<br>1.5    mA|
|**IGES**<br>VCE = 0V, VGE=20V|<br>~~|~~|100    nA|
|**VCE(sat)**<br>IC<br>= IC110, VGE= 15V, Note 1<br>1.66           2.10        V<br>TJ= 150C<br>1.95                     V|1.66           2.10        V<br>1.95                     V<br>~~_~~|1.66           2.10        V<br>1.95                     V|



- UPS 

- Motor Drives 

- SMPS 

- PFC Circuits 

- Battery Chargers 

- Welding Machines 

- Lamp Ballasts 

©2021 Littelfuse, Inc. 

DS101053B(10/21) 

## **IXYX110N120B4** 

|(T= 25°C Unless Otherwise Specified)<br>**Min.       Typ.        Max.**|**Typ.        Max.**|**Typ.        Max.**|
|---|---|---|
|(TJ= 25°C Unless Otherwise Specified)<br>**Min.        Typ.        Max.**|**Typ.        Max.**|**Typ.        Max.**|
|**gfs**IC= 55A, VCE= 10V, Note 1                        40                68<br>~~ae~~|= 10V, Note 1                        40                68<br>~~ae~~|S|
|**Cies**<br>5460<br>**Coes**VCE= 25V, VGE= 0V, f = 1MHz<br>340<br>**Cres**<br>220<br>~~ae~~|5460<br>340<br>220<br>~~ae~~|pF<br>pF<br>pF|
|**Qg(on)**<br>340<br>**Qge**IC=IC110, VGE= 15V, VCE= 0.5 • VCES<br>52<br>**Qgc**<br>144<br>~~ae~~|340<br>52<br>144<br>~~ae~~|nC<br>nC<br>nC|
|**td(on)**<br>45<br>**tri**<br>50<br>**Eon**<br>3.60<br>**td(off)**<br>390           ns<br>**tfi**<br>130<br>**Eoff**<br>3.85                   mJ<br>**Inductive load, TJ = 25°C**<br>IC= 50A, VGE= 15V<br>VCE= 0.5 • VCES, RG= 2<br>Note 2<br>~~aa~~|45<br>50<br>3.60<br>390           ns<br>130<br>3.85                   mJ<br>~~aa~~|ns<br>ns<br>mJ<br>390           ns<br>ns<br>3.85                   mJ|
|**t**<br>34<br>~~aa~~<br>~~po~~|34<br>~~aa~~<br>~~po~~||
|**td(on)**<br>34<br>**tri**<br>38<br>**Eon**<br>4.96<br>**td(off)**<br>440<br>**tfi**<br>210<br>**Eoff**<br>6.45<br>**Inductive load, TJ = 150°C**<br>IC= 50A, VGE= 15V<br>VCE= 0.5 • VCES, RG= 2<br>Note 2<br>~~po~~|34<br>38<br>4.96<br>440<br>210<br>6.45<br>~~po~~|ns<br>ns<br>mJ<br>ns<br>ns<br>mJ|
|**RthJC**<br>**RthCS**<br>0.15<br>~~po~~|0.11 °C/W<br>0.15<br>~~po~~|0.11 °C/W<br>°C/W|



Notes: 

1.  Pulse test, t  300µs, duty cycle, d  2%. 

2.  Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. 

Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXYX110N120B4** 

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**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25 [o] C Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>800<br>200 VGE = 15V13V 10V 700 VGE = 15V<br>—— 12V YY, So SS Ee gg gen eS Ten nnEe<br>11V<br>600 14V<br>160<br>9V<br>500 13V<br>120 12V<br>400<br>an 26.——s<br>11V<br>80 8V 300<br>10V<br>ee eS!2a<br>200 9V<br>40 7V<br>100 8V<br>7V<br>0 Sey 460) 6V 0 ooo<br>0 | 0.5 1 ATT 1.5 2 2.5 3 0 p) Sue SS50 5 10 SSn00000ER 15 20<br>VCE - Volts VCE - Volts<br>Fig. 4. Dependence of VCE(sat) on<br>Fig. 3. Output Characteristics @ TJ = 150 [o] C Junction Temperature<br>2.0<br>200 eS VGE = 15V 13V12V 10V 1.8 S VGE = 15V  e<br>11V I  C = 220A<br>160 1.6<br>PT Bee 9V e ee<br>1.4<br>120<br>|| lyr) ~EPebert tt<br>I  C = 110A<br>1.2<br>8V<br>80 TT) Ame<br>1.0<br>40 7V 0.8 Gane<br>BaD fa [2682] Cope eee I  C = 55A<br>0 Pwr 6V 0.6 eee<br>0 0.5 1 1.5 2 2.5 3 3.5 4 -50 -25 0 25 50 75 100 125 150 175<br>VCE - Volts TJ - Degrees Centigrade<br>Fig. 5. Collector-to-Emitter Voltage vs.<br>Fig. 6. Input Admittance<br>Gate-to-Emitter Voltage<br>4.5 300<br>4.0 T e TJ  = 25 [o] C  250 TJ = - 40 [o] C /<br>25 [o] C<br>3.5 He e 150 [o] C<br>200<br>3.0 tii<br>I  C = 220A  Et 150 eo<br>2.5<br>100<br>2.0 110A<br>CES<br>50<br>1.5<br>ASE EP ET<br>55A<br>1.0 TSE SSS 0 CETPA<br>7 8 9 10 11 12 13 14 15 4 5 6 7 8 9 10 11<br>VGE - Volts VGE - Volts<br> - AmperesIC AmperesI -C<br> - Normalized<br> - Amperes<br>IC<br>CE(sat)<br>V<br> - Volts Amperes<br>CE  -<br>V IC<br>**----- End of picture text -----**<br>


©2021 Littelfuse, Inc. 

## **IXYX110N120B4** 

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**----- Start of picture text -----**<br>
Fig. 7. Transconductance Fig. 8. Gate Charge<br>120 16<br>TJ = - 40 [o] C 14 VCE = 600V<br>100 I C = 110A<br>I G = 10mA<br>12<br>TSS PEE<br>80 25 [o] C<br>10<br>60 150 [o] C 8<br>6<br>40<br>{7 4 P/{ o[ | |ft]<br>20<br>2<br>0 eee] 0 FEE<br>0 50 100 150 200 250 300 0 50 100 150 200 250 300 350<br>IC - Amperes QG - NanoCoulombs<br>Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area<br>10,000 240<br>200<br>ee eee Cies on a<br>160<br>1,000 120<br>Coes 80<br>— rt<br>Neeeutl TJ = 150 [o] C<br>40 RG = 2Ω<br>f = 1 MHz  dv / dt < 10V / ns<br>Cres<br>100 S SeS 0 EA<br>0 5 10 15 20 25 30 35 40 200 300 400 500 600 700 800 900 1000 1100 1200<br>VCE - Volts VCE - Volts<br>Fig. 11. Maximum Transient Thermal Impedance<br>0.30.1 a<br>0.01<br>Bieticespate Blau Bi<br>0.001<br>ae<br>0.0001<br>Se Sli Sell Beet te<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br>Siemens  - Volts<br> - GE<br>f s V<br>g<br> - Amperes<br>IC<br>Capacitance - PicoFarads<br>K / W<br> -<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


Littelfuse reserves the right to change limits, test conditions, and dimensions. 

**IXYX110N120B4** 

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**----- Start of picture text -----**<br>
Fig. 12. Inductive Switching Energy Loss vs. Fig. 13. Inductive Switching Energy Loss vs.<br>Collector Current Collector-Emitter Voltage<br>12 12 12 12<br>Eoff Eon Eoff Eon<br>10 s RG = 2Ω ,VGE = 15V pa 10 10 e RG = 2Ω ,VGE = 15V e 10<br>VCE = 600V        TJ = 150 [o] C I  C = 50A<br>8 8 8 TJ = 150 [o] C 8<br>6 6 6 6<br>Aare Eee<br>TJ = 25 [o] C<br>4 4 4 4<br>Ce] Cee TJ = 25 [o] C<br>2 2 2 2<br>seeerT |e<br>0 0 0 0<br>20 EE} 30 40 | 50 | 60 70 80 400 | 500 600 pt 700 800 900 1000<br>IC - Amperes VCE - Volts<br>Fig. 14. Inductive Switching Energy Loss vs. Fig. 15. Inductive Switching Energy Loss vs.<br>Gate Resistance Junction Temperature<br>16 24 16 16<br>Eoff Eon  14 Eoff Eon 14<br>14 C TJ = 150 [o] C ,  VGE = 15V FS 20 FExS RG = 2Ω ,VGE = 15V To<br>VCE = 600V         12 VCE = 600V       12<br>I C = 100A<br>12 16<br>I C = 100A 10 10<br>P oet A<br>10 12 8 8<br>6 6<br>8 oe 8 eee<br>4 4<br>6 aS I  C = 50A 4 2 pegeepep I C = 50A 2<br>4 PAPER 0 0 eere 0<br>2 3 4 5 6 7 8 9 10 25 50 75 100 125 150<br>RG - Ohms TJ - Degrees Centigrade<br>Fig. 16. Inductive Turn-off Switching Times vs. Fig. 17. Inductive Turn-off Switching Times vs.<br>Gate Resistance Collector Current<br>260 700 350 540<br>250 t f i td(off) 650 t f i td(off)<br>F TJ = 150 [o] C,  VGE = 15V ST 300 aK RG = 2 = Ω ,VGE = 15V 500<br>240 VCE = 600V        600 VCE = 600V<br>F ee 250 A R } 460<br>230 550<br>aoe Pht TJ = 150 [o] C<br>220 I  C = 50A 500 200 420<br>faa gc =<br>210 450<br>150 380<br>saet [ [er | | teh ps<br>200 400<br>190 PSS I  C = 100A 350 100 SSE TJ = 25 [o] C 340<br>180 300 50 300<br>2 SPEER 3 4 5 6 7 8 9 10 = 20 =oCCe 30 40 50 60 70 80 90 100<br>RG - Ohms IC - Amperes<br>E E<br>on on<br> -<br>E - MilliJoulesoff MilliJoules MilliJoulesEoff -  - MilliJoules<br>E<br>on E<br> - on<br>MilliJoules MilliJoules<br> -  -<br>off off<br>E MilliJoules E  - MilliJoules<br>t<br>t<br> d(off)<br>d(off)<br> - Nanoseconds  - Nanosecondsf i<br>t f i t<br>- Nanoseconds<br>- Nanoseconds<br>**----- End of picture text -----**<br>


©2021 Littelfuse, Inc. 

## **IXYX110N120B4** 

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**----- Start of picture text -----**<br>
Fig. 18. Inductive Turn-off Switching Times vs. Fig. 19. Inductive Turn-on Switching Times vs.<br>Junction Temperature Gate Resistance<br>280 550 160 70<br>t f i td(off) 140 t r i td(on) 65<br>240 p RVGCE= 2= 600V      Ω ,  VGE = 15V a 500 120 e TVJCE= 150= 600V   [o] C,  VGE = 15V t I  C = 100A 60<br>200 450<br>s ee 100 e ee 55<br>I C = 50A<br>160 400 80 50<br>e424 aa<br>I C = 100A 60 45<br>120 350<br>ee aa I  C = 50A<br>ee 40 40<br>80 300<br>oe 20 35<br>40 ee 250 0 a 30<br>25 50 75 100 125 150 2 3 4 5 6 7 8 9 10<br>TJ - Degrees Centigrade RG - Ohms<br>Fig. 20. Inductive Turn-on Switching Times vs. Fig. 21. Inductive Turn-on Switching Times vs.<br>Collector Current Junction Temperature<br>100 70 140 65<br>Rt r iG = = 2Ω ,  VGE = 15Vtd(on) 120 S e Rt r iG = 2Ω ,  VGE t= 15Vd(on) 60<br>80 VCE = 600V  60 VCE = 600V<br>100 55<br>60 50 80 I  C = 100A 50<br>PP ee E S<br>TJ = 25 [o] C<br>60 45<br>40 40<br>ett<br>i | ja 40 40<br>20 30 I C = 50A<br>eer) TJ = 150 [o] C 20 SSS 35<br>0 20 0 30<br>20 Pee 30 40 50 60 EEE 70 80 90 100 ) 25 Fee 50 75  er 100 125 150<br>IC - Amperes TJ - Degrees Centigrade<br> d(off)t  d(on)t<br>-<br>Nanoseconds<br> - Nanoseconds  -<br>t f i t r i<br>- Nanoseconds<br>Nanoseconds<br>t<br>t<br> d(on)<br> d(on)<br>-<br>tNanoseconds r i - tNanoseconds r i-<br>- Nanoseconds<br>Nanoseconds<br>**----- End of picture text -----**<br>


Littelfuse reserves the right to change limits, test conditions, and dimensions. 

IXYS REF: IXY_110N120B4 (N8-RY90) 9-02-21-B 

## **IXYX110N120B4** 

**==> picture [202 x 235] intentionally omitted <==**

**----- Start of picture text -----**<br>
 PLUS247 [TM]  Outline<br>A<br>A2 E Q E1<br>e e EY<br>D2<br>R<br>D1<br>D<br>4<br>1      2       3<br>L1<br>r<br>C HE A1 [| L3 PLCSb b2 2 PLCS iL 2 PLCSe<br>b4<br>1 - Gate<br>2,4 - Collector<br>3 - Emitter<br>**----- End of picture text -----**<br>


Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 

©2021 Littelfuse, Inc. 



## Links

- [View this product on Novapart](https://novapart.co/products/IXYX110N120B4/igbt-340-a-166-v-136-kw-12-kv-plus247-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/littelfuse/ixyx110n120b4/igbt-1-2kv-340a-1-36kw-plus247/dp/4167475)
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