# TRANS, IGBT, 4.5KV, 90A, ISOPLUS I5-PAK

![Product image](https://novapart.co/image/farnell:3771282/)

**URL**: https://novapart.co/products/IXYL60N450/trans-igbt-45kv-90a-isoplus-i5-pak
**SKU**: IXYL60N450
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €93.6200
**Stock**: 10+

## Description

; TRANS, IGBT, 4.5KV, 90A, ISOPLUS I5-PAK; Continuous Collector Current:90A; Collector Emitter Saturation Voltage:2.64V; Power Dissipation:417W; Collector Emitter Voltage Max:4.5kV

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Product Range | XPT Series |
| Power Dissipation | 417W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | ISOPLUS i5-PAK |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 90A |
| Collector Emitter Voltage Max | 4.5kV |
| Collector Emitter Saturation Voltage | 2.64V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3771282/)

## **High Voltage XPT[TM ] IGBT** 

## **IXYL60N450** 

**V =   4500V CES I =   38A C110 V**  **3.30V CE(sat)** 

## **(Electrically Isolated Tab)** 

## **ISOPLUS i5-Pak[TM]** 

|**Symbol**|**Test Conditions**|**Maximum Ratings**|**Maximum Ratings**||
|---|---|---|---|---|
|**VCES**|TJ = 25°C to 150°C|4500|4500|V|
|**VCGR**|TJ = 25°C to 150°C, RGE= 1M|4500|4500|V|
|**VGES**|Continuous<br>±20|±20|±20|V|
|**VGEM**|Transient<br>±30|±30|±30|V|
|**IC25**|TC = 25°C                                                                           90|= 25°C                                                                           90|= 25°C                                                                           90|A|
|**IC110**|TC = 110°C<br>38                    A|38                    A|38                    A|38                    A|
|**ICM**|TC = 25°C, 1ms<br>680|680|680|A|
|**SSOA**|VGE= 15V, TVJ= 125°C, RG= 4.7|I|ICM= 120|A|
|**(RBSOA)**Clamped Inductive Load                                                              1500                        V|Clamped Inductive Load                                                              1500                        V|Clamped Inductive Load                                                              1500                        V|Clamped Inductive Load                                                              1500                        V|Clamped Inductive Load                                                              1500                        V|
|**PC**|TC = 25°C||417|W|
|**TJ**||-55 ... +150||°C|
|**TJM**|||150|°C|
|**Tstg**||-55 ... +150||°C|
|**TL**|Maximum Lead Temperature for Soldering                       300||Maximum Lead Temperature for Soldering                       300|°C|
|**TSOLD**|Plastic Body for 10s<br>260                 °C|260                 °C|260                 °C|260                 °C|
|**FC**|Mounting Force                                              40..120 / 9..27|Mounting Force                                              40..120 / 9..27<br>N/lb||N/lb|
|**VISOL**|50/60 Hz, RM, t = 1min                                                 4000                 V~|50/60 Hz, RM, t = 1min                                                 4000                 V~|50/60 Hz, RM, t = 1min                                                 4000                 V~|50/60 Hz, RM, t = 1min                                                 4000                 V~|
|**Weight**|8|8|8|g|



**==> picture [125 x 26] intentionally omitted <==**

**----- Start of picture text -----**<br>
G<br>E<br>C Isolated Tab<br>**----- End of picture text -----**<br>


G  = Gate E   =  Emitter C  = Collector 

## **Features** 

- Silicon Chip on Direct-Copper Bond (DCB) Substrate 

- Isolated Mounting Surface 

- 4000V~ Electrical Isolation 

- High Blocking Voltage 

- High Peak Current Capability 

- Low Saturation Voltage 

## **Advantages** 

- Low Gate Drive Requirement 

|(TJ= 25C, Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|
|---|---|---|
|**BVCES**<br>IC= 250µA, VGE= 0V<br>4500                                      V<br>~~|~~|4500                                      V<br>~~I~~<br>~~||~~|4500                                      V|
|**VGE(th)**<br>IC<br>= 250µA, VCE= VGE<br>3.0<br>~~|~~|5.0<br>~~||~~|5.0<br>V|
|**ICES**<br>VCE = 4000V, VGE= 0V<br>Note 1, TJ= 90°C<br>75<br>~~|~~|25<br>75<br>~~| |~~<br>~~_~~|25<br>µA<br>µA|
|**IGES**<br>VCE = 0V, VGE= ±20V|±300    nA<br>~~I~~|±300    nA|
|**VCE(sat)**<br>IC<br>= 60A, VGE= 15V, Note 1<br>2.64           3.30       V<br>TJ= 125°C<br>3.46                      V|2.64           3.30       V<br>3.46                      V<br>~~a~~|2.64           3.30       V<br>3.46                      V|



- High Power Density 

## **Applications** 

- Switch-Mode and Resonant-Mode Power Supplies 

- Uninterruptible Power Supplies (UPS) 

- Laser Generators 

- Capacitor Discharge Circuits 

- AC Switches 

© 2020 IXYS CORPORATION, All Rights Reserved 

DS100578B(3/20) 

|**IXYL60N450**<br>**Symbol Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C Unless Otherwise Specified)<br>**Min.        Typ.**<br>**Max.**<br>**gfS**<br>IC= 60A, VCE= 10V, Note 1                         32             54<br>S<br>**Cies**<br>7530<br>pF<br>**Coes**<br>VCE= 25V, VGE= 0V, f = 1MHz                                    270<br>pF<br>**Cres**<br>115<br>pF<br>**RGi**<br>Integrated Gate Input Resistance<br>5.0<br>gXYs~~|-~~|**IXYL60N450**<br>**Symbol Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C Unless Otherwise Specified)<br>**Min.        Typ.**<br>**Max.**<br>**gfS**<br>IC= 60A, VCE= 10V, Note 1                         32             54<br>S<br>**Cies**<br>7530<br>pF<br>**Coes**<br>VCE= 25V, VGE= 0V, f = 1MHz                                    270<br>pF<br>**Cres**<br>115<br>pF<br>**RGi**<br>Integrated Gate Input Resistance<br>5.0<br>gXYs~~|-~~|
|---|---|
|**Qg(on)**<br>366                       nC<br>**Qge**<br>IC= 60A, VGE= 15V, VCE= 1000V                                 48<br>nC<br>**Qgc**<br>138<br>nC<br>~~|_~~||
|**td(on)**<br>55<br>ns<br>**tr**<br>450<br>ns<br>**td(off)**<br>450<br>ns<br>**tf**<br>1360                       ns<br>**Resistive Switching Times, TJ = 25°C**<br>IC= 60A, VGE= 15V<br>VCE= 960V, RG= 4.7<br>~~|-~~||
|**td(on)**<br>60                       ns<br>**tr**<br>664                       ns<br>**td(off)**<br>510<br>ns<br>**tf**<br>1070<br>ns<br>**Resistive Switching Times, TJ = 125°C**<br>IC= 60A, VGE= 15V<br>VCE= 960V, RG= 4.7<br>~~|~~-||
|**RthJC**<br>0.30  °C/W||
|**RthCS**<br>0.15<br>°C/W||



## **IXYL60N450** 

Notes: 

1.  Pulse test, t < 300s, duty cycle, d < 2%. 

2.  Device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXYL60N450** 

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Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>120<br>V GE = 25V 300 VGEGE = 25V<br>           19V<br>          19V<br>100           15V            15V            13V 11V<br>          13V 250<br>          11V<br>80 9V<br>200<br>60<br>150 9V<br>7V<br>40<br>100<br>20 50<br>7V<br>5V<br>0 FOyZanna 0 A<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 5 10 15 20<br>VCE - Volts VCE - VoltsCE - Volts - Volts<br> - Amperes Amperes -  -<br>IC ICC<br>**----- End of picture text -----**<br>


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300 VGEGE = 25V<br>           19V<br>           15V<br>           13V 11V<br>250<br>200<br>150 9V<br>100<br>50<br>7V<br>0 A<br>0 5 10 15 20 25<br>VCE - VoltsCE - Volts - Volts<br>Amperes -  -<br>ICC<br>**----- End of picture text -----**<br>


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Fig. 4. Dependence of VCE(sat) on<br>Fig. 3. Output Characteristics @ TJ = 125ºC Junction Temperature<br>120 2.2<br>VGE = 25V<br>          19V 2.0 VGE = 15V<br>100           15V<br>          13V 1.8<br>          11V I C = 120A<br>80 1.6<br>9V<br>1.4<br>60 Wf -——] _—m I C = 60A |<br>1.2<br>7V<br>40 1.0<br>0.8<br>I C = 30A<br>20<br>0.6<br>5V<br>0 BAePot 0.4 SEGRE<br>0 1 2 3 4 5 6 -50 -25 0 25 50 75 100 125 150<br>| BEES<br>VCE - Volts TJ - Degrees Centigrade<br>Fig. 5. Collector-to-Emitter Voltage<br>Fig. 6. Input Admittance<br>vs. Gate-to-Emitter Voltage<br>7 200<br>TJ  = 25ºC 180<br>6<br>160<br>Meo 140 y<br>5<br>SW HLGEHGREEEEES 120 J<br>4 I  C = 120A 100<br>80<br>3 (aan 60A | Vl<br>60 T J   = 125ºC<br>           25ºC<br>40<br>2 - 40 º C<br>30A<br>20<br>1 REESEBREUER SEER EEERER 0 SY4<br>6 7 8 9 10 11 12 13 14 15 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5<br>VGE - Volts VGE - Volts<br> - Normalized<br> - Amperes<br>IC<br>CE(sat)<br>V<br> - Volts<br>Amperes<br>CE<br>V IC -<br>**----- End of picture text -----**<br>


© 2020 IXYS CORPORATION, All Rights Reserved 

## **IXYL60N450** 

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**----- Start of picture text -----**<br>
Fig. 7. Transconductance Fig. 8. Gate Charge<br>100 OO 16 TT<br>90 pop pt TJ = - 40ºC 14 bp  VCE = 1000V HY<br>a OO 7  I C = 60A So<br>80 esee ee 12 a  I G = 10mA       ee ee ee ,<br>70 a rotor.<br>es 25ºC COCOd<br>60 eee eee 10 Po<br>eo EEE eeee<br>50 125ºC 8<br>pe<br>40 | eg f f fp<br>ny fret | 6 ey ee ee<br>30 ey 7 0aae ee Oy | a<br>y/o 4 i eeee<br>20 PYa r 7 7.TT.)1. Pdee<br>2<br>10<br>| A<br>0 ee ee eee 0 |esa aeea ee<br>0 20 40 60 80 100 120 140 160 180 200 0 50 100 150 200 250 300 350 400<br>IC - Amperes QG - NanoCoulombs<br>Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area<br>100,000 ———— a eee 140 aeee<br>f = 1 MHz<br>os es ee ce ee ee eee 120 ee ee<br>ee ee Cies FANE<br>10,000<br>100<br>80<br>1,000<br>Coes 60<br>Se ee Po PN<br>SSee ee eee eee eee eee Nee ee<br>40<br>100 TJ = 125ºC<br>Cres 20 RG = 4.7Ω<br>dv / dt < 10V / ns<br>10 eses a aee es es ee 0 Po“eeee><br>0 5 10 15 20 25 30 35 40 500 1000 1500 2000 2500 3000 3500 4000 4500<br>VCE - Volts VCE - Volts<br>Siemens  - Volts<br> -  GE<br> f s V<br>g<br> - Amperes<br>IC<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


**Fig. 11. Maximum Transient Thermal Impedance** 

**==> picture [528 x 190] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>pT<br>Po eee<br>rr | 0 es ere ee en<br>0.1 ===ooaee ne ae|<br>a oece eh eeootee ee eeooee ee ee ooOe<br>0.01 taen ee |<br>= a a<br>at oo oooo<br>0.001 on oi oooh oooooh<br>0.0001 0.001 0.01 0.1 1 10 100<br>Pulse Width - Seconds<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS REF: Y_60N450(H9-645) 11-21-13 

**IXYL60N450** 

**==> picture [215 x 220] intentionally omitted <==**

**----- Start of picture text -----**<br>
ISOPLUS i5-Pak [TM]  (IXYL) Outline<br>E Q A2 A S<br>PR U<br>i R t] F<br>D rlo of Q1 T<br>R1 1 |<br>4<br>To 1 2 3 |<br>| Odi L1<br>L 5<br>|<br>|<br>c b1<br>A1 b2<br>| e1 tot e<br>1 - Gate<br>— - 2 - Emitter AEC<br>3 - Collector<br>4 - Electrically Isolated 3,600V to pins<br>**----- End of picture text -----**<br>


© 2020 IXYS CORPORATION, All Rights Reserved 

**IXYL60N450** ~~ss~~ 

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 



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- [Supplier page](https://es.farnell.com/littelfuse/ixyl60n450/trans-igbt-4-5kv-90a-isoplus-i5/dp/3771282)
---

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