# IGBT, 480 A, 1.34 V, 1.5 kW, 1.2 kV, TO-264, 3 Pins

![Product image](https://novapart.co/image/farnell:3930443/)

**URL**: https://novapart.co/products/IXYK140N120A4/igbt-480-a-134-v-15-kw-12-kv-to-264-3-pins
**SKU**: IXYK140N120A4
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €27.0000
**Stock**: 100+
**Lead Time**: 232 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 1.5kW |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-264 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 480A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Saturation Voltage | 1.34V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3930443/)

## **1200V XPT[TM] IGBT GenX4[TM]** 

## **IXYK140N120A4** 

Ultra Low-Vsat IGBT for up to 5kHz Switching 

|**Symbol**|**Test Conditions**|**Maximum Ratings**||
|---|---|---|---|
|**VCES**<br>**VCGR**|TJ = 25°C to 175°C<br>1200<br>TJ = 25°C to 175°C, RGE= 1M<br>1200|1200<br>1200|V<br>V|
|**VGES**|Continuous<br>±20|±20|V|
|**VGEM**|Transient<br>±30|±30|V|
|**IC25**|TC= 25°C (Chip Capability)                                                480|= 25°C (Chip Capability)                                                480<br>A|A|
|**ILRMS**|Terminal Current Limit                                                       160|Terminal Current Limit                                                       160<br>A|A|
|**IC110**|TC= 110°C                                                                                 140                     A|= 110°C                                                                                 140                     A|= 110°C                                                                                 140                     A|
|**ICM**|TC = 25°C, 1ms<br>1200|1200<br>A|A|
|**SSOA**|VGE= 15V, TVJ= 125°C, RG= 2|ICM= 280|A|
|**(RBSOA)**Clamped Inductive Load                                           0.8 • V|Clamped Inductive Load                                           0.8 • V|Clamped Inductive Load                                           0.8 • VCESV|V|
|**PC**<br>**TJ**<br>**TJM**|TC = 25°C|1500<br>-55 ... +175<br>175|W<br>°C<br>°C|
|**Tstg**||-55 ... +175|°C|
|**TL**|Maximum Lead Temperature for Soldering|300|°C|
||1.6 mm (0.062 in.) from Case for 10s|||
|**Md**|Mounting Torque<br>1.13/10|1.13/10<br>Nm/lb.in||
|**Weight**|10                  g|10                  g|10                  g|



|**VCES**|**=   1200V**|**=   1200V**|**=   1200V**|
|---|---|---|---|
|**IC110**|**=   140A**|**=   140A**||
|**VCE(sat)**|**CE(sat)**|**1.70V**||
|**tfi(typ)**|**=   320ns**|**=   320ns**||
|**TO-264**<br>**(IXYK)**<br>G<br>C||||
||E|||
|||C (Tab)||
|G  = Gate||E       =  Emitter|E       =  Emitter|
|C  = Collector||Tab   =  Collector|Tab   =  Collector|



## **Features** 

- Optimized for Low Conduction Losses 

- Positive Thermal Coefficient of Vce(sat)  International Standard Package 

## **Advantages** 

- High Power Density 

- Low Gate Drive Requirement 

## **Applications** 

|(T= 25C, Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|
|**BVCES**<br>IC= 250A, VGE= 0V<br>1200                                      V|1200                                      V<br>~~|~~|1200                                      V|
|**VGE(th)**<br>IC<br>= 4mA, VCE= VGE<br>4.5|6.5<br>~~|~~|6.5<br>V|
|**ICES**<br>VCE = VCES, VGE= 0V<br>TJ= 125C|25<br>5    mA<br>~~_~~|25<br>A<br>5    mA|
|**IGES**<br>VCE = 0V, VGE=20V|<br>~~|~~|200    nA|
|**VCE(sat)**<br>IC<br>= IC110, VGE= 15V, Note 1<br>1.34         1.70        V<br>TJ= 150C<br>1.50                     V|1.34         1.70        V<br>1.50                     V|1.34         1.70        V<br>1.50                     V|



- Power Inverters 

- UPS  Motor Drives  SMPS  PFC Circuits  Battery Chargers  Welding Machines  Lamp Ballasts  Inrush Current Protection Circuits 

©2020 Littelfuse, Inc. 

DS100973A(6/20) 

## **IXYK140N120A4** 

|(T= 25°C Unless Otherwise Specified)<br>**Min.       Typ.        Max.**|**Typ.        Max.**|**Typ.        Max.**|
|---|---|---|
|(TJ= 25°C Unless Otherwise Specified)<br>**Min.        Typ.        Max.**|**Typ.        Max.**|**Typ.        Max.**|
|**gfs**IC= 60A, VCE= 10V, Note 1                        60              100<br>~~ae~~|= 10V, Note 1                        60              100<br>~~ae~~|S|
|**Cies**<br>8300<br>**Coes**VCE= 25V, VGE= 0V, f = 1MHz<br>470<br>**Cres**<br>300<br>~~ae~~|8300<br>470<br>300<br>~~ae~~|pF<br>pF<br>pF|
|**Qg(on)**<br>420<br>**Qge**IC=IC110, VGE= 15V, VCE= 0.5 • VCES<br>68<br>**Qgc**<br>210<br>~~ae~~|420<br>68<br>210<br>~~ae~~|nC<br>nC<br>nC|
|**td(on)**<br>52<br>**tri**<br>47<br>**Eon**<br>4.9<br>**td(off)**<br>590           ns<br>**tfi**<br>320<br>**Eoff**<br>12.0                   mJ<br>**Inductive load, TJ = 25°C**<br>IC= 70A, VGE= 15V<br>VCE= 0.5 • VCES, RG= 1.5<br>Note 2<br>~~aa~~|52<br>47<br>4.9<br>590           ns<br>320<br>12.0                   mJ<br>~~aa~~|ns<br>ns<br>mJ<br>590           ns<br>ns<br>12.0                   mJ|
|**t**<br>44<br>~~aa~~<br>~~po~~|44<br>~~aa~~<br>~~po~~||
|**td(on)**<br>44<br>**tri**<br>42<br>**Eon**<br>7.4<br>**td(off)**<br>710<br>**tfi**<br>530<br>**Eoff**<br>20.0<br>**Inductive load, TJ = 150°C**<br>IC= 70A, VGE= 15V<br>VCE= 0.5 • VCES, RG= 1.5<br>Note 2<br>~~po~~|44<br>42<br>7.4<br>710<br>530<br>20.0<br>~~po~~|ns<br>ns<br>mJ<br>ns<br>ns<br>mJ|
|**RthJC**<br>**RthCS**<br>0.15<br>~~po~~|0.10 °C/W<br>0.15<br>~~po~~|0.10 °C/W<br>°C/W|



Notes: 

1.  Pulse test, t  300µs, duty cycle, d  2%. 

2.  Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. 

Littelfuse reserves the right to change limits, test conditions and dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXYK140N120A4** 

**Fig. 1. Output Characteristics @ TJ = 25[o] C** 

**Fig. 2. Extended Output Characteristics @ TJ = 25[o] C** 

**==> picture [527 x 186] intentionally omitted <==**

**----- Start of picture text -----**<br>
280 1000<br>V GE = 15V V GE = 15V<br>          12V  900            14V 13V<br>240            11V 9V<br>          10V  800<br>200 700 12V<br>600<br>160 —f-| YY AEE 11V<br>500<br>8V<br>120 GG 400 poe 10V<br>80 300 9V<br>7V 200<br>40<br>8V<br>100<br>6V<br>0 : LZ 0 Eon 7V eee<br>0 0.5 1 1.5 2 2.5 0 2 4 6 8 10 12 14 16 18 20<br>VCE - Volts VCE - Volts<br> - AmperesIC AmperesIC -<br>**----- End of picture text -----**<br>


**Fig. 3. Output Characteristics @ TJ = 150[o] C** 

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**----- Start of picture text -----**<br>
280<br>VGE = 15V  10V<br>           13V<br>240            12V<br>           11V<br>9V<br>200<br>160<br>8V<br>120<br>80<br>7V<br>40 f——<br>0 Z— 6V<br>0 0.5 1 1.5 2 2.5 3<br>VCE - Volts<br>Fig. 5. Collector-to-Emitter Voltage vs.<br> Gate-to-Emitter Voltage<br>3.5<br>TJ  = 25 [o] C<br>3.0 Te<br>2.5<br>2.0 ian I C = 280A<br>1.5 | ASE 140A<br>1.0 SSS 70A<br>0.5 SSS] Pr<br>7 8 9 10 11 12 13 14 15<br>VGE - Volts<br> - Amperes<br>IC<br> - Volts<br>CE<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 4. Dependence of VCE(sat) on<br>Junction Temperature<br>1.8<br>VGE = 15V<br>1.6<br>I C = 280A<br>1.4<br>1.2<br>I C = 140A<br>1.0<br>0.8<br>I C = 70A<br>0.6<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ - Degrees Centigrade<br>Fig. 6. Input Admittance<br>240200 SEE EEE<br>160<br>120 core y<br>80 SSSESEEREREDY/, TJ  = 150 [o] C<br>           25 [o] C<br>- 40 [o] C<br>40 Co, ey<br>0 caneeeq<br>4 4.5 5 5.5 6 6.5 7 7.5 8 8.5<br>VGE - Volts<br> - Normalized<br>CE(sat)<br>V<br>Amperes<br> -<br>IC<br>**----- End of picture text -----**<br>


©2020 Littelfuse, Inc. 

## **IXYK140N120A4** 

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**----- Start of picture text -----**<br>
Fig. 7. Transconductance<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 8. Gate Charge<br>180160 TJ = - 40 [o] C ——— 1614 a  VCE = 600V<br> I C = 140A<br>140 TS 12 (oe  I G = 10mA<br>ee ee a ae = Hof ff |<br>120<br>Ce 25 [o] C 10 Peeeo<br>100<br>Sans 742 acegeeees<br>EID SSTes 22 8 Pozeeee eee<br>80 150 [o] C<br>6<br>60 Werte} Pope<br>40 PY 4<br>20 \/Aco oe 2 EEE<br>0 EREEEEEEESEEEeeeee 0 (<br>0 20 40 60 80 100 120 140 160 180 200 0 50 100 150 200 250 300 350 400<br>IC - Amperes QG - NanoCoulombs<br>Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area<br>10,000 300<br>Cies<br>[SSS 250 FT<br>WEEE) 200 EERE<br>1,000 NEE 150<br>NtEE) BEEFEEN<br>Coes<br>100<br>T J = 125 [o] C<br>50 RG = 2Ω<br>f = 1 MHz  C res dv / dt < 10V / ns<br>100 Eee][| BRS|} 0 ERSEEEECENEee ER<br>1 0 5 10 15 20 25 30 35 40 200 300 400 500 600 700 800 900 1000 1100 1 200<br>VCE - Volts Fig. 11. Maximum Transient Thermal Impedance V CE  - Volts<br>Fig. 11. Maximum Transient Thermal Impedance<br>0.2 aaa<br>0.1<br>LIM TTI VET TIN LTT<br>Pee eet eee Ee<br>A A0TN s TL<br>0.01 eT<br>eepT 0reNeTT<br>a er ee ee eel<br>0.001 eT LU TT<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br>Siemens  - Volts<br> -  GE<br> f s V<br>g<br> - Amperes<br>IC<br>Capacitance - PicoFarads<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


Littelfuse reserves the right to change limits, test conditions and dimensions. 

## **IXYK140N120A4** 

**==> picture [526 x 636] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 12. Inductive Switching Energy Loss vs. Fig. 13. Inductive Switching Energy Loss vs.<br> Collector Current  Collector-Emitter Voltage<br>40 22 36 16<br>36  Eoff                    Eon  TJ = 150 [o] C 20 32  E off        E on  14<br>32 PS  RG = 1.5Ω , VGE = 15V Ee 18  RG = 1.5 = Ω,VGE = 15V<br> VCE = 600V        28  I C = 70A        12<br>28 16<br>fee 24 A 10<br>24 ee eee 14 aaa<br>TJ = 150 [o] C<br>20 eet or ez 12 20 == 8<br>16 Paaeae— T J  = 25 [o] C 10 16 Bet et 6<br>12 8<br>12 4<br>8 6 TJ = 25 [o] C<br>40 eePepeee 42 84 peespTScore 20<br>50 60 70 80 90 100 110 120 130 140 150 400 500 600 700 800 900 1000<br>IC - Amperes VCE - Volts<br>Fig. 14. Inductive Switching Energy Loss vs. Fig. 15. Inductive Switching Energy Loss vs.<br> Gate Resistance  Junction Temperature<br>44 32 40 32<br>40  Eoff      Eon  28 36  E off       E on  28<br> TJ = 150 [o] C ,  VGE = 15V  RG = 1.5Ω,VGE = 15V<br> VCE = 600V         32  VCE = 600V       24<br>36 Se 24 ===<br>32 I C = 140A 20 28 I C = 140A 20<br>24 16<br>28 16<br>20 12<br>24 12<br>16 8<br>I  C  = 70A I C = 70A<br>20 8<br>12 4<br>16 4<br>ERE EE 8 Seeat 0<br>1 2 3 4 5 6 7 8 9 10<br>25 50 75 100 125 150<br>RG - Ohms TJ - Degrees Centigrade<br>Fig. 16. Inductive Turn-off Switching Times vs. Fig. 17. Inductive Turn-off Switching Times vs.<br> Gate Resistance  Collector Current<br>600 1200 800 1000<br>580  t f i td(off)  1100 700 t f i td(off) 900<br> T J  = 150 [o] C,  V GE  = 15V  RG = 1.5Ω,VGE = 15V<br>560  V CE  = 600V        1000 600  VCE = 600V        800<br>540 ‘ie 22527 900 Seas eee<br>I C = 70A 500 700<br>=" at ee TJ = 150 [o] C<br>520 800<br>See 400 BPRS SS 600<br>500 700<br>I  C  = 140A 300 500<br>480 a pee 600 See<br>TJ = 25 [o] C<br>460 aed ff 500 200 eeie 400<br>440 ee ee 400 100 r+ 300<br>1 2 3 4 5 6 7 8 9 10 50 60 70 80 90 100 110 120 130 140 150<br>RG - Ohms IC - Amperes<br>E E<br>on on<br> - MilliJoules  - MilliJoules<br>off off<br>E  - MilliJoules E  - MilliJoules<br>E<br>on E<br>on<br> - MilliJoules  - MilliJoules<br>Eoff  - MilliJoules Eoff  - MilliJoules<br> d(off)t d(off)t<br> - Nanoseconds  - Nanoseconds<br>t f i tf i<br> - Nanoseconds  - Nanoseconds<br>**----- End of picture text -----**<br>


©2020 Littelfuse, Inc. 

## **IXYK140N120A4** 

**==> picture [525 x 420] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 18. Inductive Turn-off Switching Times vs. Fig. 19. Inductive Turn-on Switching Times vs.<br> Junction Temperature  Gate Resistance<br>700 900 240 90<br>600  R  t Gf i  = 1.5Ω ,  V GEtd(off)    = 15V 800 200  t TJr i = 150 [o] C,  VGEtd(on)   = 15V I C = 140A 80<br> VCE = 600V        V CE  = 600V<br>— Eee<br>500 I C = 70A 700 160 70<br>400 600 120 60<br>aaa at ye I C = 70A<br>I C = 140A<br>300 500 80 50<br>TS =Be “ a<br>200 400 40 40<br>100 300 0 30<br>25 50 75 100 125 150 1 2 3 4 5 6 7 8 9 10<br>im EERE EEE<br>TJ - Degrees Centigrade RG - Ohms<br>Fig. 20. Inductive Turn-on Switching Times vs. Fig. 21. Inductive Turn-on Switching Times vs.<br> Collector Current  Junction Temperature<br>160 70 180 80<br> t r i td(on) 160  t r i td(on)  75<br>140 65<br> RG = 1.5Ω ,  VGE = 15V  RG = 1.5Ω ,  VGE = 15V<br>140 70<br>120 a  VCE = 600V  60 =  VCE = 600V<br>re ene 120 65<br>T J  = 25 [o] C<br>100 55 100 I  C  = 140A 60<br>ee eee eens<br>80 T J  = 150 [o] C 50 80 55<br>60 50<br>60 a T oe J = 25 [o] C 45 Stat<br>40 45<br>40 Fear 40 eee I C = 70A<br>20 EEttt 35 200 ASR 4035<br>50 60 70 80 90 100 110 120 130 140 150 25 50 75 100 125 150<br>IC - Amperes TJ - Degrees Centigrade<br> d(off)t d(on)t<br> - Nanoseconds  - Nanoseconds<br>tf i t r i<br> - Nanoseconds  - Nanoseconds<br> d(on)t d(on)t<br> - Nanoseconds  - Nanoseconds<br>r i r i<br>t t<br> - Nanoseconds  - Nanoseconds<br>**----- End of picture text -----**<br>


Littelfuse reserves the right to change limits, test conditions and dimensions. 

IXYS REF: IXY_140N120A4 (Y19-RY90) 7-16-19 

## **IXYK140N120A4** 

**==> picture [202 x 240] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-264 Outline<br>D<br>— E ES B A .<br>San Q S r<br>0R<br>Q1<br>D<br>1 in<br>0R1<br>1 2 3 L1<br>C<br>—<br>ES<br>L A1<br>_<br>| J M C A M<br>b1 soto b c<br>b2<br>e<br>——e5 0P1 ee 1  = Gate<br>2,4  = Collector<br>BACK SIDE 3  =  Emitter<br>9 ar A<br>4 | 0P K M D B M<br>**----- End of picture text -----**<br>


©2020 Littelfuse, Inc. 

**IXYK140N120A4** ~~ss~~ 

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 

Littelfuse reserves the right to change limits, test conditions and dimensions. 



## Links

- [View this product on Novapart](https://novapart.co/products/IXYK140N120A4/igbt-480-a-134-v-15-kw-12-kv-to-264-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/littelfuse/ixyk140n120a4/transistor-igbt-1-2kv-480a-to/dp/3930443)
---

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