# TRANSISTOR, IGBT, 1.2KV, 240A, TO-264

![Product image](https://novapart.co/image/farnell:3775981/)

**URL**: https://novapart.co/products/IXYK120N120C3/transistor-igbt-12kv-240a-to-264
**SKU**: IXYK120N120C3
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €17.3800
**Stock**: 10+
**Lead Time**: 81 days (indicative)

## Description

Continuous Collector Current:240A; Collector Emitter Saturation Voltage:2.55V; Power Dissipation:1.5kW; Collector Emitter Voltage Max:1.2kV; No. of Pins:3Pins; Operating Temperature

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Product Range | XPT GenX3 Series |
| Power Dissipation | 1.5kW |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-264 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 240A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Saturation Voltage | 2.55V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3775981/)

## **1200V XPT[TM ] IGBTs GenX3[TM]** 

High-Speed IGBTs for 20-50 kHz Switching 

## **IXYK120N120C3 IXYX120N120C3** 

**V =   1200V CES I =   120A C110 V  3.20V CE(sat) t =   96ns fi(typ)** 

## **TO-264 (IXYK)** 

|**Symbol**|**Test Conditions**|**Maximum Ratings**|**Maximum Ratings**|
|---|---|---|---|
|**VCES**<br>**VCGR**|TJ = 25°C to 175°C<br>TJ = 25°C to 175°C, RGE= 1M|1200<br>1200|V<br>V|
|**VGES**|Continuous<br>±20|±20|V|
|**VGEM**|Transient<br>±30|±30|V|
|**IC25**|TC= 25°C (Chip Capability)                                                240|= 25°C (Chip Capability)                                                240|A|
|**ILRMS**|Terminal Current Limit                                                       160|Terminal Current Limit                                                       160|A|
|**IC110**<br>**ICM**|TC= 110°C                                                                                 120                     A<br>TC = 25°C, 1ms<br>700|= 110°C                                                                                 120                     A<br>700|= 110°C                                                                                 120                     A<br>A|
|**IA**|TC = 25°C                                                                         60                   A|= 25°C                                                                         60                   A|= 25°C                                                                         60                   A|
|**EAS**|TC = 25°C                                                                             2                    J|= 25°C                                                                             2                    J|= 25°C                                                                             2                    J|
|**SSOA**|VGE= 15V, TVJ= 150°C, RG= 1|ICM= 240|A|
|**(RBSOA)**Clamped Inductive Load                                         V|Clamped Inductive Load                                         V|Clamped Inductive Load                                         VCE  VCES||
|**PC**|TC = 25°C|1500|W|
|**TJ**||-55 ... +175|°C|
|**TJM**||175|°C|
|**Tstg**<br>**TL**|Maximum Lead Temperature for Soldering|-55 ... +175<br>300|°C<br>°C|
|**TSOLD**|1.6 mm (0.062in.) from Case for 10s|260|°C|
|**Md**<br>**FC**|Mounting Torque  (TO-264)<br>1.13/10<br>Mounting Force    (PLUS247)                       20..120 /4.5..27              N/lb|1.13/10<br>Mounting Force    (PLUS247)                       20..120 /4.5..27              N/lb|Nm/lb.in<br>Mounting Force    (PLUS247)                       20..120 /4.5..27              N/lb|
|**Weight**|TO-264<br>10|10|g|
||PLUS247<br>6|6|6g|



|**Symbol**<br>(T= 25C, Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|
|**BVCES**<br>IC= 250A, VGE= 0V<br>1200                                      V|1200                                      V|1200                                      V|
|**VGE(th)**<br>IC<br>= 500A, VCE= VGE<br>3.0|5.0|5.0<br>V|
|**ICES**<br>VCE = VCES, VGE= 0V<br>TJ= 150C|25<br>1.5    mA|25<br>A<br>1.5    mA|
|**IGES**<br>VCE = 0V, VGE=20V||100    nA|
|**VCE(sat)**<br>IC<br>=IC110, VGE= 15V, Note 1<br>2.55          3.20      V<br>TJ= 150C<br>3.40                      V|2.55          3.20      V<br>3.40                      V|2.55          3.20      V<br>3.40                      V|



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**----- Start of picture text -----**<br>
G<br>C<br>E<br>Tab<br>PLUS247 (IXYX)<br>G<br>G<br>C<br>Tab<br>E<br>G  = Gate E       =  Emitter<br>C  = Collector Tab   =  Collector<br>**----- End of picture text -----**<br>


## **Features** 

- Optimized for Low Switching Losses 

- Square RBSOA  International Standard Packages  Positive Thermal Coefficient of Vce(sat)  Avalanche Rated 

- High Current Handling Capability 

## **Advantages** 

- High Power Density 

- Low Gate Drive Requirement 

## **Applications** 

- High Frequency Power Inverters 

- UPS 

- Motor Drives 

- SMPS 

- PFC Circuits 

- Battery Chargers  Welding Machines  Lamp Ballasts 

© 2013 IXYS CORPORATION, All Rights Reserved 

DS100451B(9/13) 

## **IXYK120N120C3 IXYX120N120C3** 

|(T= 25°C Unless Otherwise Specified)<br>**Min.       Typ.        Max.**|**Typ.        Max.**|**Typ.        Max.**|
|---|---|---|
|(TJ= 25°C Unless Otherwise Specified)<br>**Min.        Typ.        Max.**<br>~~||~~|**Typ.        Max.**<br>~~||~~|**Typ.        Max.**|
|**gfs**IC= 60A, VCE= 10V, Note 1                        40                68<br>~~||~~|= 10V, Note 1                        40                68<br>~~||~~|S|
|**Cies**<br>9850<br>**Coes**VCE= 25V, VGE= 0V, f = 1MHz<br>580<br>**Cres**<br>218<br>~~||~~|9850<br>580<br>218<br>~~||~~|pF<br>pF<br>pF|
|**Qg(on)**<br>412<br>**Qge**IC=IC110, VGE= 15V, VCE= 0.5 • VCES<br>73<br>**Qgc**<br>180|412<br>73<br>180<br>~~-~~|nC<br>nC<br>nC|
|**td(on)**<br>35<br>**tri**<br>77<br>**Eon**<br>6.75<br>**td(off)**<br>176           ns<br>**tfi**<br>96<br>**Eoff**<br>5.10<br>**Inductive load, TJ = 25°C**<br>IC= 100A, VGE= 15V<br>VCE= 0.5 • VCES, RG= 1<br>Note 2|35<br>77<br>6.75<br>176           ns<br>96<br>5.10<br>~~-~~|ns<br>ns<br>mJ<br>176           ns<br>ns<br>mJ|
|**td(on)**<br>33<br>**tri**<br>72<br>**Eon**<br>10.30<br>**td(off)**<br>226<br>**tfi**<br>120<br>**Eoff**<br>7.20<br>**Inductive load, TJ = 150°C**<br>IC= 100A, VGE= 15V<br>VCE= 0.5 • VCES, RG= 1<br>Note 2|33<br>72<br>10.30<br>226<br>120<br>7.20|ns<br>ns<br>mJ<br>ns<br>ns<br>mJ|
|**RthJC**<br>**RthCS**<br>0.15|0.10 °C/W<br>0.15|0.10 °C/W<br>°C/W|



**TO-264 Outline** 

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**----- Start of picture text -----**<br>
Terminals:   1  = Gate<br>                   2,4  = Collector<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
                      3  =  Emitter<br>**----- End of picture text -----**<br>


## **PLUS247[TM] Outline** 

Notes: 

1.  Pulse test, t  300μs, duty cycle, d  2%. 

2.  Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. 

|Dim.<br>Millimeter<br>Min.|Millimeter<br>Min.<br>Max.|Inches<br>Min.<br>Max.|
|---|---|---|
|A<br>4.83<br>A1<br>2.29<br>A2<br>1.91|4.83<br>5.21<br>2.29<br>2.54<br>1.91<br>2.16|.190<br>.205<br>.090<br>.100<br>.075<br>.085|
|b<br>1.14<br>b1<br>1.91<br>b2<br>2.92|1.14<br>1.40<br>1.91<br>2.13<br>2.92<br>3.12|.045<br>.055<br>.075<br>.084<br>.115<br>.123|
|C<br>0.61<br>D<br>20.80<br>E<br>15.75|0.61<br>0.80<br>20.80<br>21.34<br>15.75<br>16.13|.024<br>.031<br>.819<br>.840<br>.620<br>.635|
|e<br>5.45 BSC<br>L<br>19.81<br>L1<br>3.81<br>Q<br>5.59|5.45 BSC<br>19.81<br>20.32<br>3.81<br>4.32<br>5.59<br>6.20|.215 BSC<br>.780<br>.800<br>.150<br>.170<br>.220 0.244|
|R<br>4.32|4.32<br>4.83|.170<br>.190|



IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXYK120N120C3 IXYX120N120C3** 

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Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>240<br>VGE = 15V 300 VGE = 15V<br>          13V            12V 10V<br>200           12V             11V<br>          11V<br>250<br>          10V   9V<br>160 Hit ee |<br>tl get) 200 Te 9V<br>120 8V<br>150<br>lp 8V<br>80 TAT) 100 WeeeeSe<br>7V<br>GY 7V =<br>40 A 50<br>6V 6V<br>0 CAPT 0 eee<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 2 4 6 8 10 12 14 16 18 20<br>VCE - Volts VCE - Volts<br>Fig. 4. Dependence of VCE(sat) on<br>Fig. 3. Output Characteristics @ TJ = 150ºC<br>Junction Temperature<br>240 2.2<br>VGE = 15V<br>           13V 2.0 VGE = 15V<br>200           12V<br>          11V HY 1.8 ee<br>9V<br>          10V   I  C  = 240A<br>160 — fff 1.6 “SET TTT 1<br>1.4<br>120 HAGYj 8V SGReRFCEEee<br>— 1.2 par I C = 120A<br>80 7V 1.0<br>(fe 0.8 eee<br>40 6V I  C  = 60A<br>fT 0.6 =e Fe<br>0 A 5V 0.4<br>0 1 2 3 4 5 6 7 -50 -25 0 25 50 75 100 125 150 175<br>VCE - Volts TJ - Degrees Centigrade<br>Fig. 5. Collector-to-Emitter Voltage vs.<br> Gate-to-Emitter Voltage Fig. 6. Input Admittance<br>8 280<br>TJ  = 25ºC<br>7 Toe 240 Toe<br>6 200<br>Ceres Soe”<br>5 Se 160<br>I C = 240A<br>4 120<br>POS Seyv<br>TJ  = 150ºC<br>3 120A  80           25ºC<br>- 40ºC<br>2 (AEE 40 AA<br>REPS 60A  SEES CTA<br>1 PCCTTTAS 0 ee oe<br>6 7 8 9 10 11 12 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5<br>VGE - Volts VGE - Volts<br> - Amperes Amperes<br>IC  -<br>IC<br> - Normalized<br> - Amperes<br>IC<br>CE(sat)<br>V<br> - Volts<br>Amperes<br>CE<br>V IC -<br>**----- End of picture text -----**<br>


© 2013 IXYS CORPORATION, All Rights Reserved 

**IXYK120N120C3 IXYX120N120C3** 

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**----- Start of picture text -----**<br>
Fig. 7. Transconductance Fig. 8. Gate Charge<br>140 16<br>TJ = - 40ºC 14  VCE = 600V<br>120  I  C = 120A<br>Fa EERw 12  I G = 10mA<br>100<br>25ºC<br>ere) 10 tee<br>80<br>150ºC<br>8<br>60 7S ee<br>6<br>40 pos SAREE<br>4<br>200 PTPr) 20 AeZEEE EE<br>0 50 100 150 200 250 300 0 50 100 150 200 250 300 350 400 450<br>IC - Amperes QG - NanoCoulombs<br>Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area<br>100,000 280<br>f = 1 MHz<br>240<br>Cies 200<br>PU<br>10,000<br>160<br>120<br>1,000 SO Coes<br>80<br>T J = 150ºC<br>40 R G = 1Ω<br>dv / dt < 10V / ns<br>Cres<br>100 == Fig. 11. Maximum  Transient  0 Thermal Impedance<br>1 0 5 10 15 20 25 30 35 40 100 300 500 700 900 1100 1 300<br>VCE - Volts VCE - Volts<br>Fig. 11. Maximum Transient Thermal Impedance<br>0.2 aaaaa<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br>Siemens  - Volts<br> -  GE<br> f s V<br>g<br> - Amperes<br>IC<br>Capacitance - PicoFarads<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXYK120N120C3 IXYX120N120C3** 

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**----- Start of picture text -----**<br>
Fig. 12. Inductive Switching Energy Loss vs. Fig. 13. Inductive Switching Energy Loss vs.<br> Gate Resistance  Collector Current<br>10 18 8 14<br>9  E TJoff = 150ºC ,  V      EGEon  = 15V - - - - 16 7  E RoffG = 1ΩVGE     E = 15Von - - - - 12<br>8  VCE =—=—L  = 600V          ETT I C = 100A 14 r=  VCE = 600V        TE<br>6 10<br>7 aoe 12 Pa<br>5 Le TJ = 150ºC 8<br>6 10<br>SEEPPP ET 4 pee 6<br>5 8<br>PEEP ett et<br>3 4<br>4 6<br>nn Su pe eee eee eres Peery<br>I C = 50A TJ = 25ºC<br>3 oe 4 2 per EEE 2<br>2 2 1 0<br>PEELE PPE EEE EL<br>1 2 3 4 5 6 7 8 9 10 50 55 60 65 70 75 80 85 90 95 100<br>RG - Ohms IC - Amperes<br>Fig. 14. Inductive Switching Energy Loss vs. Fig. 15. Inductive Turn-off Switching Times vs.<br> Junction Temperature  Gate Resistance<br>8 [ 14 200 rs 800<br> Eoff       Eon - - - -  t f i t d(off) - - - -<br>7  RG = 1ΩVGE = 15V 12 180  TJ = 150ºC,  VGE = 15V 700<br>6 P|  VCE = 600V       ee I  C  = 100A ttea 10 160 a  VCE = 600V        e s eaaee 600<br>oe EEE<br>5 8 140 I  C  = 50A 500<br>sep ma a<br>4 peer 6 120 = Se I  C = 100A 400<br>pr ae LL<br>3 ee 4 100 SRL 300<br>I C = 50A<br>2 2 80 200<br>ee eee ee ee ee<br>1 0 60 100<br>25 50 75 100 125 150 1 2 3 4 5 6 7 8 9 10<br>TJ - Degrees Centigrade RG - Ohms<br>Fig. 16. Inductive Turn-off Switching Times vs. Fig. 17. Inductive Turn-off Switching Times vs.<br> Collector Current  Junction Temperature<br>200 320 160 320<br>180  t f i t d(off) - - - - 300 150  t f i td(off) - - - -  300<br> RG = 1Ω ,  VGE = 15V  RG = 1Ω ,  VGE = 15V<br>160 Tae T J = 150ºC  V CE  = 600V            280 140  VCE = 600V       I C = 50A 280<br>140 260 130 260<br>120 aT| 240 120 EES6 240<br>100 220 110 220<br>80 PA be)re 200 100 ee ocakZ| I C = 100A 200<br>60 TJ = 25ºC 180 90 180<br>40 ree 160 80 See 160<br>20 PT tt [ttt] tt 4 140 70 140<br>50 55 60 65 70 75 80 85 90 95 100 25 50 75 100 125 150<br>IC - Amperes TJ - Degrees Centigrade<br>E E<br>on on<br> - MilliJoules  - MilliJoules<br>off off<br>E  - MilliJoules E  - MilliJoules<br>t<br>E<br>on  d(off)<br> - MilliJoules<br>off  - Nanoseconds<br>E  - MilliJoules t f i<br> - Nanoseconds<br>t<br> d(off) t<br> d(off)<br> - Nanoseconds  - Nanoseconds<br>t f i tf i<br> - Nanoseconds<br> - Nanoseconds<br>**----- End of picture text -----**<br>


© 2013 IXYS CORPORATION, All Rights Reserved 

## **IXYK120N120C3 IXYX120N120C3** 

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**----- Start of picture text -----**<br>
Fig. 18. Inductive Turn-on Switching Times vs.<br> Gate Resistance<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 19. Inductive Turn-on Switching Times vs.<br> Collector Current<br>90 37<br>80  t r i oat td(on)d(on) - - - -  Tt 36<br> RG = 1ΩG = 1Ω = 1ΩΩ ,  VGE = 15VGE = 15V = 15V<br> VCE = 600V CE = 600V  = 600V<br>7060 eeCTCT TJ = 25ºCJ = 25ºC = 25ºC eer 3534<br>50 33<br>TJ = 150ºCJ = 150ºC = 150ºC<br>40 32<br>ap edeaae<br>30 AT 31<br>Pa<br>20 TTT 30<br>50 55 60 65 70 75 80 85 90 95 100<br>IC - AmperesC - Amperes - Amperes<br>Fig. 21. Maximum Peak Load Current vs. Frequency<br>120<br>110 KN<br>100<br>90<br>80 ooh<br>70 SS<br>60<br>Triangular Wave<br>50  TJ = 150ºCJ = 150ºC = 150ºC<br>40  TCC = 75ºC 75ºCºCC<br> V CE  = 600V<br>30<br>20  V  R GE G =  = 15V  1Ω Square Wave<br>10 |  D = 0.5  ES<br>0 ~—_<br>10 100 1,000<br>fmax - KiloHertzsmax - KiloHertzs - KiloHertzs<br> - Nanoseconds  d(on)t<br>r i<br>tr i<br> - Nanoseconds<br> - Amperes<br>ICC<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
160 84 90<br>140  t r i ee t d(on) - - - -  eee 76 80  t r i oat td(on)d(on) - - - -  Tt<br> TJ = 150ºC,  VGE = 15V  RG = 1ΩG = 1Ω = 1ΩΩ ,  VGE = 15VGE = 15V = 15V<br>120 ee  VCE = 600V   68  VCE = 600V CE = 600V  = 600V<br>100 60<br>ee ce 607060 eeCTCT TJ = 25ºCJ = 25ºC = 25ºC eer<br>80 52<br>I C = 100A 50<br>TJ = 150ºCJ = 150ºC = 150ºC<br>60 44<br>40<br>40 ac6S50=— 36 M ap edeaae<br>I C = 50A<br>ee 30 AT<br>20 ae | | | Tf 28 Pa<br>0 SEE EEEREEEEES EE 20 20 TTT<br>1 2 3 4 5 6 7 8 9 10 50 55 60 65 70 75 80 85 90 95<br>RG - Ohms IC - AmperesC - Amperes - Amperes<br>Fig. 20. Inductive Turn-on Switching Times vs.<br> Junction Temperature Fig. 21. Maximum Peak Load Current vs. Frequency<br>120 40 120<br> t r i | t d(on) - - - -  110 KN<br>100  R G  = 1Ω ,  V GE  = 15V 38 100<br> VCE = 600V       90<br>80 | I C = 100A Pf LL 36 80 ooh<br>Co 70 SS<br>60 34 60<br>Triangular Wave<br>50  TJ = 150ºCJ = 150ºC = 150ºC<br>40 32 40  TCC = 75ºC 75ºCºCC<br>I C = 50A  V CE  = 600V<br>30<br>20 30 20  V  R GE G =  = 15V  1Ω Square Wave<br>ead 10 |  D = 0.5  ES<br>0 HHEEEEEEEEECEEEHEH 28 0<br>25 50 75 100 125 150 10 100<br>TJ - Degrees Centigrade fmax - KiloHertzsmax - KiloHertzs - KiloHertzs<br> - Nanoseconds  d(on)t  - Nanoseconds<br>t r i tr i<br> - Nanoseconds<br> d(on)t<br> - Amperes<br> - Nanoseconds ICC<br>r i<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS REF: IXY_120N120C3(9P-C91) 9-09-13 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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