# IGBT, 140 A, 2.1 V, 650 W, 1.2 kV, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:4167483/)

**URL**: https://novapart.co/products/IXYH55N120C4/igbt-140-a-21-v-650-w-12-kv-to-247-3-pins
**SKU**: IXYH55N120C4
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €4.7900
**Stock**: 100+
**Lead Time**: 232 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Product Range | XPT Gen 4 Series |
| Power Dissipation | 650W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 140A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Saturation Voltage | 2.1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4167483/)

## **1200V XPT[[TM]] Gen 4 IGBT** 

## **IXYH55N120C4** 

**==> picture [515 x 434] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||||||
|---|---|---|---|---|---|---|---|
|1200V XPT|[[TM]]|Gen 4|IXYH55N120C4|V|=   1200V|
|CES|
|IGBT|I|=   55A|
|C110|
|V||2.5V|
|Cc|CE(sat)|
|t|=   42ns|
|High Speed IGBT|fi(typ)|
|for 20-50kHz Switching|
|E|
|TO-247|
|(IXYH)|
|Symbol|Test Conditions|Maximum Ratings|
|G|
|VCES|TJ|= 25°C to 175°C|1200|V|C|E|C (Tab)|
|VCGR|TJ|= 25°C to 175°C, RGE = 1M|1200|V|
|VGES|Continuous|±20|V|G  = Gate           C      =  CollectorE  = Emitter       Tab   =  Collector|
|VGEM|Transient|±30|V|
|IC25|TC|= 25°C                                                                        140|A|
|IC110|TC|= 110°C|55|A|
|ICM|TC|= 25°C, 1ms|290|A|
|SSOA|VGE  = 15V, TVJ = 150°C, RG = 5|ICM = 110|A|
|(RBSOA)|Clamped Inductive Load                                     VCE||0.8 • VCES|Features|
|PC|TC|= 25°C|650|W|
|TJ|-55 ... +175|°C||Optimized for Low Switching LossesPositive Thermal Coefficient ofPositive Thermal Coefficient of|
|TJM|175|°C|Vce(sat)|
|T|-55 ... +175|°C||
|stg|International Standard Package|
|TL|Maximum Lead Temperature for Soldering|300|°C|
|1.6 mm (0.062 in.) from Case for 10s|
|Advantages|
|Md|Mounting Torque|1.13 / 10        Nm/lb.in|
||High Power Density|
|Weight|6                   g||

**----- End of picture text -----**<br>


-  Optimized for Low Switching LossesPositive Thermal Coefficient ofPositive Thermal Coefficient of 

- Vce(sat) 

- International Standard Package 

- Low Gate Drive Requirement 

## **Applications** 

- Power Inverters 

- UPS 

**==> picture [352 x 129] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||||
|---|---|---|---|---|---|
|Symbol|Test Conditions                                           Characteristic Values|
|(TJ = 25C, Unless Otherwise Specified)|Min.        Typ.        Max.|
|BVCES|IC     = 250A, VGE  = 0V|1200                                      V|—|
|VGE(th)|IC|= 250A, VCE = VGE|4.0|6.5|V|
|ICES|VCE|= VCES,|VGE = 0V|20|A|
|TJ = 150C|_|500|A|
|IGES|VCE|= 0V, VGE = 20V|—|100    nA|
|VCE(sat)|IC|= 55A, VGE = 15V, Note 1|2.1           2.5      V|
|TJ = 150C|2.6                      V|

**----- End of picture text -----**<br>


- Motor Drives 

- SMPS 

- PFC Circuits 

- Battery Chargers 

- Welding Machines 

- Lamp Ballasts 

©2021 Littelfuse, Inc. 

DS100956C(10/21) 

## **IXYH55N120C4** 

|(T= 25°C Unless Otherwise Specified)<br>**Min.       Typ.        Max.**|(T= 25°C Unless Otherwise Specified)<br>**Min.       Typ.        Max.**|**Typ.        Max.**|**Typ.        Max.**|
|---|---|---|---|
|(TJ= 25°C Unless Otherwise Specified)<br>**Min.        Typ.        Max.**||**Typ.        Max.**|**Typ.        Max.**|
|**gfs**IC= 55A, VCE= 10V, Note 1                        18                30<br>~~=~~||= 10V, Note 1                        18                30<br>~~=~~|S|
|**Cies**<br>2300<br>**Coes**VCE= 25V, VGE= 0V, f = 1MHz<br>125<br>**Cres**<br>77<br>~~=~~||2300<br>125<br>77<br>~~=~~|pF<br>pF<br>pF|
|**Qg(on)**<br>114<br>**Qge**IC= 55A, VGE= 15V, VCE= 0.5 • VCES<br>19<br>**Qgc**<br>49<br>~~=~~||114<br>19<br>49<br>~~=~~|nC<br>nC<br>nC|
|**td(on)**<br>20<br>**tri**<br>50<br>**Eon**<br>3.50<br>**td(off)**<br>180<br>**tfi**<br>42<br>**Eoff**<br>1.34            mJ<br>**Inductive load, TJ = 25°C**<br>IC= 40A, VGE= 15V<br>VCE= 0.5 • VCES, RG= 5<br>Note 2<br>~~Po~~||20<br>50<br>3.50<br>180<br>42<br>1.34            mJ<br>~~Po~~|ns<br>ns<br>mJ<br>ns<br>ns<br>1.34            mJ|
|**t**<br>20<br>~~pe~~||20<br>~~pe~~||
|**td(on)**<br>**tri**<br>**Eon**<br>**td(off)**<br>**tfi**<br>**Eoff**<br>~~pe~~|20<br>34<br>4.80<br>200<br>123<br>2.50<br>**Inductive load, TJ = 150°C**<br>IC= 40A, VGE= 15V<br>VCE= 0.5 • VCES, RG= 5<br>Note 2<br>~~pe~~|20<br>34<br>4.80<br>200<br>123<br>2.50<br>~~pe~~|ns<br>ns<br>mJ<br>ns<br>ns<br>mJ|
|**RthJC**<br>**RthCS**<br>0.21<br>~~pe~~||0.23 °C/W<br>0.21<br>~~pe~~|0.23 °C/W<br>0.21C/W|



1.  Pulse test, t  300µs, duty cycle, d  2%. 

2.  Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. 

Littelfuse reserves the right to change limits, test conditions, and dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXYH55N120C4** 

**Fig. 1. Output Characteristics @ TJ = 25[o] C** 

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Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>**----- End of picture text -----**<br>


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100 VGE = 15V 11V 240<br>13V   VGE = 15V<br>12V<br>200<br>80 10V 14V<br>Toh, 474 eee<br>160 13V<br>60 en (Ac) (|FREE 12V<br>Ae 9V {=<br>120 11V<br>40 TG -—— | ff<br>10V<br>8V 80<br>9V<br>20<br>40<br>Bn) Ae 7V 8V<br>0 ||[Ae 6V 0 eee 7V<br>0 0.5 1 1.5 2 2.5 3 3.5 4 0 5 10 15 20 25<br>VCE - Volts VCE - Volts<br>Fig. 4. Dependence of VCE(sat) on<br>Fig. 3. Output Characteristics @ TJ = 150 [o] C Junction Temperature<br>2.2<br>100 7 VGE = 15V13V 7 2.0 VGE = 15V<br>12V 11V<br>I  C = 110A<br>1.8<br>80<br>POC, er) HS EEE<br>10V<br>1.6<br>60 TTT|| fee 9V H e<br>1.4<br>peat) Cope coo<br>I  C = 55A<br>40 1.2<br>8V<br>(fea ee<br>1.0<br>20 Sa” AS==— 7V “Tet<br>0.8<br>6V I  C = 27.5A<br>0 > feos Zee ee 0.6  ce<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 -50 -25 0 25 50 75 100 125 150 175<br>VCE - Volts TJ - Degrees Centigrade<br>Fig. 5. Collector-to-Emitter Voltage vs.<br>Fig. 6. Input Admittance<br>Gate-to-Emitter Voltage<br>5.0<br>4.5 fn TJ  = 25 [o] C  100 TJ = - 40 UL, [o] C<br>25 [o] C<br>4.0 Tee eoetCiCiS 80 OC 150 [o] C<br>3.5 I  C = 110A<br>ee e 60 e<br>3.0 in y<br>2.5 55A  40<br>PY REP PET LP A<br>2.0<br>20<br>1.5 MEP 27.5A   Lili<br>1.0 Tet 0 COLI yi it<br>7 8 9 10 11 12 13 14 15 4 5 6 7 8 9 10 11<br>VGE - Volts VGE - Volts<br> - Amperes Amperes<br>IC I -C<br> - Normalized<br> - Amperes<br>IC<br>CE(sat)<br>V<br> - Volts Amperes<br>CE  -<br>V IC<br>**----- End of picture text -----**<br>


©2021 Littelfuse, Inc. 

## **IXYH55N120C4** 

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**----- Start of picture text -----**<br>
Fig. 7. Transconductance Fig. 8. Gate Charge<br>45 16<br>40 Pf TJ = - 40 [o] C Pf 14 ape VCE = 600V<br>I C = 55A<br>35 I G = 10mA<br>12<br>30 ——s-2-——— es ee ae<br>Fei [ss][ee] 25 [o] C 10 sn ee ae<br>25<br>8<br>20 (4G4 150 [o] C aeOE —————<br>6<br>15<br>Pere 4 GES<br>10<br>5 WOE 2 oe<br>0 EERE ERE 0 Aee<br>0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120<br>IC - Amperes QG - NanoCoulombs<br>Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area<br>10,000 120<br>Cies<br>100<br>PPTt | |) eee<br>1,000 80<br>60<br>SeaeenaSMmaianiints<br>Coes<br>100 40<br>Cres TJ = 150 [o] C<br>Nee)| 20 E RG = 5Ω CE<br>f = 1 MHz  dv / dt < 10V / ns<br>10 0 eh 5 10 15 20 EE) 25 Fig. 11. Maximum  30 35 40 Transient Th  eee 0200 ermal Impedance 300 400 500 600 700 800 900 1000 1100 1200<br>1 VCE - Volts VCE - Volts<br>Fig. 11. Maximum Transient Thermal Impedance<br>aaa<br>0.4<br>0.1<br>eH FA<br>0.01 Scrat<br>aii a car<br>0.001<br>0.00001 aii 0.0001 Sati 0.001 mati 0.01 matal ii  mati 0.1 atid 1 m eatai 10<br>Pulse Width - Seconds<br>Littelfuse reserves the right to change limits, test conditions, and dimensions.<br>Volts<br>Siemens  -<br> - GE<br>f s V<br>g<br> - Amperes<br>IC<br>Capacitance - PicoFarads<br>K / W<br> -<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


## **IXYH55N120C4** 

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**----- Start of picture text -----**<br>
Fig. 12. Inductive Switching Energy Loss vs. Fig. 13. Inductive Switching Energy Loss vs.<br>Collector Current Collector-Emitter Voltage<br>6 18 4.5 10<br>Eoff Eon 4.0 Eoff Eon 9<br>5 RG = 5Ω ,VGE = 15V 15 RG = 5Ω ,VGE = 15V<br>VCE = 600V        I  C = 40A<br>E so TJ = 150 [o] C 3.5 F EE 8<br>4 12<br>3.0 TJ = 150 [o] C 7<br>3 oo | ae 9 2.5 caeaagy aes 6<br>2.0 5<br>2 | TJ = 25 [o] C 6 ete<br>1.5 4<br>1 3 TJ = 25 [o] C<br>0 e-T ae | [| | | 0 1.00.5 ae =TFL 32<br>20 30 40 50 60 70 80 400 500 600 700 800 900 1000<br>IC - Amperes VCE - Volts<br>Fig. 14. Inductive Switching Energy Loss vs. Fig. 15. Inductive Switching Energy Loss vs.<br>Gate Resistance Junction Temperature<br>7 24 6 18<br>Eoff Eon  Eoff Eon<br>6 p TJ = 150 S [o] C ,  VGE = 15V if |) fd 20 5 fe RG = 5Ω ,VGE = 15V y ff 15<br>VCE = 600V         VCE = 600V<br>5 e t 16 4 12<br>I C = 80A<br>4 ef-s To 12 3 ves 9<br>I C = 80A<br>3 8 2 6<br>p[ erry ey} 6 f |yt<br>2 I  C = 40A 4 1 I C = 40A 3<br>1 ptt SEtttty 0 0 aaPf 0<br>4 6 8 10 12 14 16 18 20 25 50 75 100 125 150<br>RG - Ohms TJ - Degrees Centigrade<br>Fig. 16. Inductive Turn-off Switching Times vs. Fig. 17. Inductive Turn-off Switching Times vs.<br>Gate Resistance Collector Current<br>170 440 200 240<br>160 == Tt f iJ = 150 [o] C,  VGEtd(off)= 15V = CELE 400 tRf iG = 5Ω = ,VGE = 15Vtd(off)<br>VCE = 600V        160 VCE = 600V        220<br>150 S ee 360<br>140 ES cece aseas 320 OO 120 e FFEee T Om J = 150 [o] C 200<br>130 I  C = 80A 280<br>80 TRS 180<br>120 S e 240 EE t=<br>I  C = 40A TJ = 25 [o] C<br>110 200<br>SSS 40 P|+= 160<br>100 a= 160 pad<br>90 TEE 120 0 Ff] tf ft 140<br>4 6 8 10 12 14 16 18 20 20 30 40 50 60 70 80<br>RG - Ohms IC - Amperes<br>E E<br>on on<br> -<br> - MilliJoules MilliJoules -<br>off off<br>E MilliJoules E  - MilliJoules<br>E E<br>on - on<br>MilliJoules MilliJoules<br> -  -<br>off off<br>E MilliJoules E  - MilliJoules<br> d(off)t d(off)t<br>- Nanoseconds  - Nanoseconds<br>f i<br>t f i t<br>- Nanoseconds - Nanoseconds<br>**----- End of picture text -----**<br>


©2021 Littelfuse, Inc. 

## **IXYH55N120C4** 

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**----- Start of picture text -----**<br>
Fig. 18. Inductive Turn-off Switching Times vs. Fig. 19. Inductive Turn-on Switching Times vs.<br>Junction Temperature Gate Resistance<br>180 220 200 60<br>160 t f i td(off) t r i td(on)<br>140 RVGCE= 5= 600V      Ω ,  VGE = 15V 200 160 TVJCE= 150= 600V   [o] C,  VGE = 15V 50<br>I  C = 80A<br>fa ire B S<br>120<br>I C = 40A 120 40<br>100 PeesaT, 180 | P e<br>80 I C = 80A 80 ort] I  C = 40A 30<br>60 a—ge7e 160 Pee<br>pea 40 Te 20<br>40 I C = 40A<br>20 a 140 0 aan 10<br>25 37.5 50 62.5 75 see} 87.5 100 112.5 125 137.5 150 C UE 4 6 ETE 8 10 IE 12 14 EE 16 18 20<br>TJ - Degrees Centigrade RG - Ohms<br>Fig. 20. Inductive Turn-on Switching Times vs. Fig. 21. Inductive Turn-on Switching Times vs.<br>Collector Current Junction Temperature<br>120 36 130 40<br>100 p RVt r iGCE= 5 e = 600V Ω S ,  VGEtd(on)= 15V EE] 32 110 bb pe RVt r iGCE= 5= 600V      Ω ,  VGEtd(on)= 15V o 35<br>80 L oe TJ = 25 [o] C 28 90 S ee I  C = 80A 30<br>60 24 70 25<br>e e eeee<br>TJ = 150 [o] C<br>40 20 50 I C = 40A 20<br>err) Le<br>20 ee 16 30 ee 15<br>0 12 10 10<br>20 OG 30 le 40 ee 50 ee 60 ee 70 80 25 Dd nd 50 75 100 125 150<br>IC - Amperes TJ - Degrees Centigrade<br> d(off)t  d(on)t<br>-<br> - Nanoseconds Nanoseconds -<br>t f i t r i<br>- Nanoseconds Nanoseconds<br>t<br>t  d(on)<br> d(on) -<br> - Nanoseconds<br> - Nanoseconds<br>t r i t r i<br>- Nanoseconds Nanoseconds<br>**----- End of picture text -----**<br>


Littelfuse reserves the right to change limits, test conditions, and dimensions. 

IXYS REF: IXY_55N120C4 (Y17-RY90) 10-20-21-A 

## **IXYH55N120C4** 

**==> picture [168 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-247 Outline<br>ga<br>a é PFE | Veixelg<br>ll est<br>+f On [ 02 (©)<br>TTL =<br>L vr c<br>‘<br>oe 1 - Gate<br>2,4 - Collector<br>3 -Emitter<br>**----- End of picture text -----**<br>


Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 

©2021 Littelfuse, Inc. 



## Links

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- [Supplier page](https://es.farnell.com/littelfuse/ixyh55n120c4/igbt-1-2kv-140a-650w-to-247/dp/4167483)
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